CN1211448C - 在二氧化硅化学机械抛光过程中减少/消除划痕和缺陷的组合物和方法 - Google Patents

在二氧化硅化学机械抛光过程中减少/消除划痕和缺陷的组合物和方法 Download PDF

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Publication number
CN1211448C
CN1211448C CNB008081379A CN00808137A CN1211448C CN 1211448 C CN1211448 C CN 1211448C CN B008081379 A CNB008081379 A CN B008081379A CN 00808137 A CN00808137 A CN 00808137A CN 1211448 C CN1211448 C CN 1211448C
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CN
China
Prior art keywords
composition
alkyl
cats product
ammonium
dimethyl
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008081379A
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English (en)
Chinese (zh)
Other versions
CN1352673A (zh
Inventor
H·诺约
R·J·舒尔茨
R·拉马钱德兰
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International Business Machines Corp
Infineon Technologies North America Corp
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International Business Machines Corp
Infineon Technologies North America Corp
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Publication of CN1352673A publication Critical patent/CN1352673A/zh
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Publication of CN1211448C publication Critical patent/CN1211448C/zh
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB008081379A 1999-09-30 2000-09-05 在二氧化硅化学机械抛光过程中减少/消除划痕和缺陷的组合物和方法 Expired - Fee Related CN1211448C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/409464 1999-09-30
US09/409,464 US6303506B1 (en) 1999-09-30 1999-09-30 Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process

Publications (2)

Publication Number Publication Date
CN1352673A CN1352673A (zh) 2002-06-05
CN1211448C true CN1211448C (zh) 2005-07-20

Family

ID=23620607

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008081379A Expired - Fee Related CN1211448C (zh) 1999-09-30 2000-09-05 在二氧化硅化学机械抛光过程中减少/消除划痕和缺陷的组合物和方法

Country Status (8)

Country Link
US (1) US6303506B1 (enExample)
EP (1) EP1218466B1 (enExample)
JP (1) JP2003510828A (enExample)
KR (1) KR100643975B1 (enExample)
CN (1) CN1211448C (enExample)
DE (1) DE60003703T2 (enExample)
HK (1) HK1046922A1 (enExample)
WO (1) WO2001023486A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
TW471057B (en) * 2000-06-09 2002-01-01 Macronix Int Co Ltd Method for reducing dishing effect during chemical mechanical polishing
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
KR100396881B1 (ko) * 2000-10-16 2003-09-02 삼성전자주식회사 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6677239B2 (en) * 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
JP4799843B2 (ja) * 2003-10-17 2011-10-26 三星電子株式会社 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法
KR100558194B1 (ko) * 2003-10-17 2006-03-10 삼성전자주식회사 높은 식각 선택비를 갖는 식각 조성물, 이의 제조 방법,이를 이용한 산화막의 선택적 식각 방법 및 반도체 장치의제조 방법
KR100596845B1 (ko) * 2003-10-22 2006-07-04 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
WO2018038885A1 (en) * 2016-08-26 2018-03-01 Ferro Corporation Slurry composition and method of selective silica polishing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3426077A (en) * 1964-04-21 1969-02-04 Gaf Corp Low foaming biodegradable surfactant compositions
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
US4588474A (en) 1981-02-03 1986-05-13 Chem-Tronics, Incorporated Chemical milling processes and etchants therefor
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5567300A (en) 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
WO1997018582A1 (en) * 1995-11-15 1997-05-22 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
US5769689A (en) 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH10102040A (ja) * 1996-09-30 1998-04-21 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法

Also Published As

Publication number Publication date
KR20020026419A (ko) 2002-04-10
JP2003510828A (ja) 2003-03-18
DE60003703T2 (de) 2004-04-22
DE60003703D1 (de) 2003-08-07
WO2001023486A1 (en) 2001-04-05
EP1218466A1 (en) 2002-07-03
EP1218466B1 (en) 2003-07-02
CN1352673A (zh) 2002-06-05
HK1046922A1 (zh) 2003-01-30
US6303506B1 (en) 2001-10-16
KR100643975B1 (ko) 2006-11-10

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