CN1201397C - 具有钌电极的半导体存储器及其制造方法 - Google Patents
具有钌电极的半导体存储器及其制造方法 Download PDFInfo
- Publication number
- CN1201397C CN1201397C CNB001206818A CN00120681A CN1201397C CN 1201397 C CN1201397 C CN 1201397C CN B001206818 A CNB001206818 A CN B001206818A CN 00120681 A CN00120681 A CN 00120681A CN 1201397 C CN1201397 C CN 1201397C
- Authority
- CN
- China
- Prior art keywords
- ruthenium layer
- semiconductor memory
- ruthenium
- layer
- contact hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 65
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000011159 matrix material Substances 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 7
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000012798 spherical particle Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 150000003303 ruthenium Chemical class 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR63639/1999 | 1999-12-28 | ||
KR1019990063639A KR100316027B1 (ko) | 1999-12-28 | 1999-12-28 | 반도체 소자의 전하저장 전극 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1311531A CN1311531A (zh) | 2001-09-05 |
CN1201397C true CN1201397C (zh) | 2005-05-11 |
Family
ID=19630961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001206818A Expired - Fee Related CN1201397C (zh) | 1999-12-28 | 2000-12-28 | 具有钌电极的半导体存储器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6555454B2 (zh) |
JP (1) | JP2001230389A (zh) |
KR (1) | KR100316027B1 (zh) |
CN (1) | CN1201397C (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100423913B1 (ko) * | 2001-12-28 | 2004-03-22 | 삼성전자주식회사 | 루테늄 함유 박막 형성 방법 |
KR100389913B1 (ko) * | 1999-12-23 | 2003-07-04 | 삼성전자주식회사 | 공정조건을 변화시키면서 화학기상 증착법으로 루테늄막을형성하는 방법 및 그에 의해 형성된 루테늄막 |
JP4053226B2 (ja) * | 2000-10-18 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
JP2002231656A (ja) * | 2001-01-31 | 2002-08-16 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
KR100425450B1 (ko) * | 2001-06-26 | 2004-03-30 | 삼성전자주식회사 | 금속-절연층-금속 캐패시터 제조 방법 |
US20030020122A1 (en) * | 2001-07-24 | 2003-01-30 | Joo Jae Hyun | Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a noble metal oxide, and integrated circuit electrodes and capacitors fabricated thereby |
KR100431811B1 (ko) * | 2001-12-12 | 2004-05-17 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
KR100448243B1 (ko) * | 2002-01-07 | 2004-09-13 | 주식회사 하이닉스반도체 | 캐패시터의 제조 방법 |
US6723623B1 (en) * | 2002-12-20 | 2004-04-20 | Micron Technology, Inc. | Methods of forming implant regions relative to transistor gates |
US9386241B2 (en) * | 2003-07-02 | 2016-07-05 | Verity Instruments, Inc. | Apparatus and method for enhancing dynamic range of charge coupled device-based spectrograph |
US20050098808A1 (en) * | 2003-11-07 | 2005-05-12 | Moon Bum-Ki | Electronic deivce and method for its fabrication |
KR100881728B1 (ko) * | 2007-05-04 | 2009-02-06 | 주식회사 하이닉스반도체 | 루테늄전극을 구비한 반도체소자 및 그 제조 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5170233A (en) | 1991-03-19 | 1992-12-08 | Micron Technology, Inc. | Method for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitor |
US5110752A (en) | 1991-07-10 | 1992-05-05 | Industrial Technology Research Institute | Roughened polysilicon surface capacitor electrode plate for high denity dram |
US5191509A (en) | 1991-12-11 | 1993-03-02 | International Business Machines Corporation | Textured polysilicon stacked trench capacitor |
JP2897631B2 (ja) * | 1993-12-28 | 1999-05-31 | 日本電気株式会社 | 半導体集積回路装置および製造方法 |
JP3127348B2 (ja) * | 1995-02-27 | 2001-01-22 | エルジイ・セミコン・カンパニイ・リミテッド | 凹凸の表面形状を有するタングステン膜を用いた半導体装置の製造方法 |
JPH09315506A (ja) | 1996-05-30 | 1997-12-09 | Natl House Ind Co Ltd | ダクトの構造 |
JPH10321819A (ja) * | 1997-05-22 | 1998-12-04 | Toshiba Corp | 半導体素子の製造方法 |
JPH11163293A (ja) * | 1997-11-28 | 1999-06-18 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH11121711A (ja) * | 1997-10-14 | 1999-04-30 | Mitsubishi Electric Corp | キャパシタの製造方法、半導体装置のキャパシタの製造方法および半導体装置のキャパシタ |
JPH11220101A (ja) * | 1998-01-30 | 1999-08-10 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP3905977B2 (ja) * | 1998-05-22 | 2007-04-18 | 株式会社東芝 | 半導体装置の製造方法 |
JPH11354751A (ja) * | 1998-06-04 | 1999-12-24 | Toshiba Corp | 半導体装置,半導体装置の製造方法および半導体製造装置 |
US6541375B1 (en) * | 1998-06-30 | 2003-04-01 | Matsushita Electric Industrial Co., Ltd. | DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention |
US6281142B1 (en) * | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
JP2001036042A (ja) * | 1999-07-26 | 2001-02-09 | Hitachi Ltd | 誘電体素子とその製造方法及び半導体装置 |
US6337237B1 (en) * | 1999-09-01 | 2002-01-08 | Micron Technology, Inc. | Capacitor processing method and DRAM processing method |
US6429127B1 (en) * | 2000-06-08 | 2002-08-06 | Micron Technology, Inc. | Methods for forming rough ruthenium-containing layers and structures/methods using same |
-
1999
- 1999-12-28 KR KR1019990063639A patent/KR100316027B1/ko not_active IP Right Cessation
-
2000
- 2000-12-19 US US09/742,170 patent/US6555454B2/en not_active Expired - Lifetime
- 2000-12-27 JP JP2000399602A patent/JP2001230389A/ja active Pending
- 2000-12-28 CN CNB001206818A patent/CN1201397C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100316027B1 (ko) | 2001-12-20 |
US20010031527A1 (en) | 2001-10-18 |
JP2001230389A (ja) | 2001-08-24 |
US6555454B2 (en) | 2003-04-29 |
KR20010061151A (ko) | 2001-07-07 |
CN1311531A (zh) | 2001-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3207110B2 (ja) | コンデンサとその形成方法 | |
US6831323B2 (en) | Semiconductor device and method for fabricating the same | |
US5573979A (en) | Sloped storage node for a 3-D dram cell structure | |
US20010012224A1 (en) | Rugged metal electrodes for metal-insulator-metal capacitors | |
JP3494852B2 (ja) | 半導体素子のコンタクト配線方法及びこれを利用したキャパシタの製造方法 | |
US20030006443A1 (en) | Semiconductor device having a capacitor and method for the manufacture thereof | |
US7888231B2 (en) | Method for fabricating a three-dimensional capacitor | |
JPH07202019A (ja) | 半導体集積回路装置および製造方法 | |
CN1201397C (zh) | 具有钌电极的半导体存储器及其制造方法 | |
US12029027B2 (en) | Capacitor and memory device | |
CN1223001C (zh) | 具有接触电容器电极的插塞的半导体存储器及其制备方法 | |
JP3913203B2 (ja) | 半導体装置 | |
US6794705B2 (en) | Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials | |
US6392264B2 (en) | Semiconductor memory device and method of producing the same | |
US6670668B2 (en) | Microelectronic structure, method for fabricating it and its use in a memory cell | |
KR20050076895A (ko) | 반도체 장치의 커패시터, 이를 포함하는 메모리 소자 및커패시터 제조 방법 | |
CN1173407C (zh) | 具有电容器的半导体器件及其制造方法 | |
US6586793B2 (en) | Ferroelectric memory and manufacturing method thereof | |
CN1330407A (zh) | 具有接触电容器电极的插塞的半导体存储器及其制造方法 | |
US6534810B2 (en) | Semiconductor memory device having capacitor structure formed in proximity to corresponding transistor | |
US20020109231A1 (en) | Composite structure of storage node and method of fabrication thereof | |
KR100431744B1 (ko) | 반도체 소자의 캐패시터 제조방법 | |
US6897510B2 (en) | MIM capacitor having a high-dielectric-constant interelectrode insulator and a method of fabrication | |
US6218231B1 (en) | Methods for fabricating high dielectric capacitors of semiconductor devices | |
JPH1197642A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HAIRYOKSA SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: Hairyoksa Semiconductor Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hyundai Electronics Industries Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: 658868 NEW BRUNSWICK, INC. Free format text: FORMER OWNER: HAIRYOKSA SEMICONDUCTOR CO., LTD. Effective date: 20120611 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120611 Address after: new brunswick Patentee after: Hynix Semiconductor Inc. Address before: Gyeonggi Do, South Korea Patentee before: Hairyoksa Semiconductor Co., Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: CONVERSANT INTELLECTUAL PROPERTY N.B.868 INC. Free format text: FORMER NAME: 658868 NEW BRUNSWICK, INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: new brunswick Patentee after: Covenson wisdom N.B.868 company Address before: new brunswick Patentee before: Hynix Semiconductor Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050511 Termination date: 20151228 |
|
EXPY | Termination of patent right or utility model |