CN1187842C - 恒温处理至少一种处理物体的装置和方法 - Google Patents

恒温处理至少一种处理物体的装置和方法 Download PDF

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Publication number
CN1187842C
CN1187842C CNB008175055A CN00817505A CN1187842C CN 1187842 C CN1187842 C CN 1187842C CN B008175055 A CNB008175055 A CN B008175055A CN 00817505 A CN00817505 A CN 00817505A CN 1187842 C CN1187842 C CN 1187842C
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China
Prior art keywords
space
heat treatment
treatment
layer
energy
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Expired - Lifetime
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CNB008175055A
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English (en)
Chinese (zh)
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CN1413361A (zh
Inventor
V·普罗布斯特
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Shell Renewable Energy Co Ltd
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Siemens and Shell Solar GmbH
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Publication of CN1413361A publication Critical patent/CN1413361A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Photovoltaic Devices (AREA)
  • Furnace Details (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Forging (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
CNB008175055A 1999-10-20 2000-10-20 恒温处理至少一种处理物体的装置和方法 Expired - Lifetime CN1187842C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19950575 1999-10-20
DE19950575.6 1999-10-20

Publications (2)

Publication Number Publication Date
CN1413361A CN1413361A (zh) 2003-04-23
CN1187842C true CN1187842C (zh) 2005-02-02

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ID=7926306

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008175055A Expired - Lifetime CN1187842C (zh) 1999-10-20 2000-10-20 恒温处理至少一种处理物体的装置和方法

Country Status (9)

Country Link
US (1) US6703589B1 (https=)
EP (1) EP1277237B1 (https=)
JP (1) JP4488155B2 (https=)
CN (1) CN1187842C (https=)
AT (1) ATE481740T1 (https=)
AU (1) AU769237B2 (https=)
DE (1) DE50015995D1 (https=)
ES (1) ES2352314T3 (https=)
WO (1) WO2001029901A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10359102A1 (de) * 2003-12-17 2005-07-21 Carl Zeiss Smt Ag Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung
JP3986021B2 (ja) * 2003-12-26 2007-10-03 オリジン電気株式会社 基板の処理方法及び装置
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
JP5176364B2 (ja) * 2007-03-29 2013-04-03 日本電気株式会社 光加熱装置及び光加熱方法
DE102008022784A1 (de) 2008-05-08 2009-11-12 Avancis Gmbh & Co. Kg Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer
EP2144026B1 (de) * 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
KR20110097908A (ko) * 2008-11-28 2011-08-31 볼커 프로브스트 반도체 층 또는 원소 셀레늄 및/또는 황으로 처리된 코팅 기판, 특히 평면 기판의 제조 방법
TWI418047B (zh) * 2009-01-07 2013-12-01 財團法人工業技術研究院 Ｉｂ－iiiａ－ｖｉａ2化合物半導體薄膜之製造裝置
DE102010008084A1 (de) 2010-02-15 2011-08-18 Leybold Optics GmbH, 63755 Vorrichtung zur thermischen Behandlung von Substraten
US9333526B2 (en) * 2011-02-17 2016-05-10 Frank A. Liporace Device for coating bone plate
US9915475B2 (en) * 2011-04-12 2018-03-13 Jiaxiong Wang Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes
US20140170805A1 (en) * 2012-12-14 2014-06-19 Heliovolt Corporation Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling
JP2014181882A (ja) * 2013-03-21 2014-09-29 Ngk Insulators Ltd 熱処理装置
TWI584489B (zh) * 2016-06-24 2017-05-21 Asia Neo Tech Industrial Co Ltd Method and processing device for hydrogen passivation treatment of solar cell sheet
KR101846509B1 (ko) * 2017-03-29 2018-04-09 (주)앤피에스 열원 장치 및 이를 구비하는 기판 처리 장치
CN110147032A (zh) * 2018-02-12 2019-08-20 上海微电子装备（集团）股份有限公司 掩模版移动装置、光刻机及光刻方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022835B2 (ja) 1978-08-17 1985-06-04 株式会社村田製作所 圧電性磁器の製造方法
JPS57183041A (en) 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor
JPS61129834A (ja) 1984-11-28 1986-06-17 Dainippon Screen Mfg Co Ltd 光照射型熱処理装置
US5011794A (en) * 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
DE59309438D1 (de) 1992-09-22 1999-04-15 Siemens Ag Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
JPH0778830A (ja) * 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
JP2875768B2 (ja) 1994-11-30 1999-03-31 新日本無線株式会社 半導体基板の熱処理方法
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US5851929A (en) 1996-01-04 1998-12-22 Micron Technology, Inc. Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source
DE19711702C1 (de) 1997-03-20 1998-06-25 Siemens Ag Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb
US6171982B1 (en) 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same

Also Published As

Publication number Publication date
US6703589B1 (en) 2004-03-09
JP2003526067A (ja) 2003-09-02
AU2344901A (en) 2001-04-30
AU769237B2 (en) 2004-01-22
ATE481740T1 (de) 2010-10-15
JP4488155B2 (ja) 2010-06-23
CN1413361A (zh) 2003-04-23
ES2352314T3 (es) 2011-02-17
DE50015995D1 (de) 2010-10-28
WO2001029901A3 (de) 2002-11-07
EP1277237A2 (de) 2003-01-22
EP1277237B1 (de) 2010-09-15
WO2001029901A2 (de) 2001-04-26

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Owner name: SHELL RENEWABLE SOURCES CO., LTD.

Free format text: FORMER OWNER: SHELL YANGGUANG CO., LTD.

Effective date: 20080215

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Effective date of registration: 20080215

Address after: hamburg

Patentee after: Shell Renewable Energy Co Ltd

Address before: Munich, Germany

Patentee before: Siemens Und Shell Solar GmbH

CX01 Expiry of patent term

Granted publication date: 20050202

CX01 Expiry of patent term