JP4488155B2 - 少なくとも1つの被処理物を熱処理するための装置及び方法 - Google Patents
少なくとも1つの被処理物を熱処理するための装置及び方法 Download PDFInfo
- Publication number
- JP4488155B2 JP4488155B2 JP2001531148A JP2001531148A JP4488155B2 JP 4488155 B2 JP4488155 B2 JP 4488155B2 JP 2001531148 A JP2001531148 A JP 2001531148A JP 2001531148 A JP2001531148 A JP 2001531148A JP 4488155 B2 JP4488155 B2 JP 4488155B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- layer
- container
- chamber
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
Landscapes
- Photovoltaic Devices (AREA)
- Furnace Details (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Forging (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19950575 | 1999-10-20 | ||
| DE19950575.6 | 1999-10-20 | ||
| PCT/DE2000/003719 WO2001029901A2 (de) | 1999-10-20 | 2000-10-20 | Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003526067A JP2003526067A (ja) | 2003-09-02 |
| JP2003526067A5 JP2003526067A5 (https=) | 2010-03-11 |
| JP4488155B2 true JP4488155B2 (ja) | 2010-06-23 |
Family
ID=7926306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001531148A Expired - Lifetime JP4488155B2 (ja) | 1999-10-20 | 2000-10-20 | 少なくとも1つの被処理物を熱処理するための装置及び方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6703589B1 (https=) |
| EP (1) | EP1277237B1 (https=) |
| JP (1) | JP4488155B2 (https=) |
| CN (1) | CN1187842C (https=) |
| AT (1) | ATE481740T1 (https=) |
| AU (1) | AU769237B2 (https=) |
| DE (1) | DE50015995D1 (https=) |
| ES (1) | ES2352314T3 (https=) |
| WO (1) | WO2001029901A2 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10359102A1 (de) * | 2003-12-17 | 2005-07-21 | Carl Zeiss Smt Ag | Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung |
| JP3986021B2 (ja) * | 2003-12-26 | 2007-10-03 | オリジン電気株式会社 | 基板の処理方法及び装置 |
| US20090183675A1 (en) * | 2006-10-13 | 2009-07-23 | Mustafa Pinarbasi | Reactor to form solar cell absorbers |
| US20090050208A1 (en) * | 2006-10-19 | 2009-02-26 | Basol Bulent M | Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer |
| JP5176364B2 (ja) * | 2007-03-29 | 2013-04-03 | 日本電気株式会社 | 光加熱装置及び光加熱方法 |
| DE102008022784A1 (de) | 2008-05-08 | 2009-11-12 | Avancis Gmbh & Co. Kg | Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer |
| EP2144026B1 (de) * | 2008-06-20 | 2016-04-13 | Volker Probst | Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern |
| KR20110097908A (ko) * | 2008-11-28 | 2011-08-31 | 볼커 프로브스트 | 반도체 층 또는 원소 셀레늄 및/또는 황으로 처리된 코팅 기판, 특히 평면 기판의 제조 방법 |
| TWI418047B (zh) * | 2009-01-07 | 2013-12-01 | 財團法人工業技術研究院 | Ib-iiia-via2化合物半導體薄膜之製造裝置 |
| DE102010008084A1 (de) | 2010-02-15 | 2011-08-18 | Leybold Optics GmbH, 63755 | Vorrichtung zur thermischen Behandlung von Substraten |
| US9333526B2 (en) * | 2011-02-17 | 2016-05-10 | Frank A. Liporace | Device for coating bone plate |
| US9915475B2 (en) * | 2011-04-12 | 2018-03-13 | Jiaxiong Wang | Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes |
| US20140170805A1 (en) * | 2012-12-14 | 2014-06-19 | Heliovolt Corporation | Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling |
| JP2014181882A (ja) * | 2013-03-21 | 2014-09-29 | Ngk Insulators Ltd | 熱処理装置 |
| TWI584489B (zh) * | 2016-06-24 | 2017-05-21 | Asia Neo Tech Industrial Co Ltd | Method and processing device for hydrogen passivation treatment of solar cell sheet |
| KR101846509B1 (ko) * | 2017-03-29 | 2018-04-09 | (주)앤피에스 | 열원 장치 및 이를 구비하는 기판 처리 장치 |
| CN110147032A (zh) * | 2018-02-12 | 2019-08-20 | 上海微电子装备(集团)股份有限公司 | 掩模版移动装置、光刻机及光刻方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6022835B2 (ja) | 1978-08-17 | 1985-06-04 | 株式会社村田製作所 | 圧電性磁器の製造方法 |
| JPS57183041A (en) | 1981-05-06 | 1982-11-11 | Nec Corp | Annealing method for chemical semiconductor |
| JPS61129834A (ja) | 1984-11-28 | 1986-06-17 | Dainippon Screen Mfg Co Ltd | 光照射型熱処理装置 |
| US5011794A (en) * | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
| DE59309438D1 (de) | 1992-09-22 | 1999-04-15 | Siemens Ag | Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat |
| JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
| JP2875768B2 (ja) | 1994-11-30 | 1999-03-31 | 新日本無線株式会社 | 半導体基板の熱処理方法 |
| US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US5851929A (en) | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
| DE19711702C1 (de) | 1997-03-20 | 1998-06-25 | Siemens Ag | Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb |
| US6171982B1 (en) | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
-
2000
- 2000-10-20 DE DE50015995T patent/DE50015995D1/de not_active Expired - Lifetime
- 2000-10-20 US US10/111,282 patent/US6703589B1/en not_active Expired - Lifetime
- 2000-10-20 AT AT00987007T patent/ATE481740T1/de not_active IP Right Cessation
- 2000-10-20 CN CNB008175055A patent/CN1187842C/zh not_active Expired - Lifetime
- 2000-10-20 JP JP2001531148A patent/JP4488155B2/ja not_active Expired - Lifetime
- 2000-10-20 EP EP00987007A patent/EP1277237B1/de not_active Expired - Lifetime
- 2000-10-20 WO PCT/DE2000/003719 patent/WO2001029901A2/de not_active Ceased
- 2000-10-20 AU AU23449/01A patent/AU769237B2/en not_active Ceased
- 2000-10-20 ES ES00987007T patent/ES2352314T3/es not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6703589B1 (en) | 2004-03-09 |
| JP2003526067A (ja) | 2003-09-02 |
| AU2344901A (en) | 2001-04-30 |
| AU769237B2 (en) | 2004-01-22 |
| ATE481740T1 (de) | 2010-10-15 |
| CN1187842C (zh) | 2005-02-02 |
| CN1413361A (zh) | 2003-04-23 |
| ES2352314T3 (es) | 2011-02-17 |
| DE50015995D1 (de) | 2010-10-28 |
| WO2001029901A3 (de) | 2002-11-07 |
| EP1277237A2 (de) | 2003-01-22 |
| EP1277237B1 (de) | 2010-09-15 |
| WO2001029901A2 (de) | 2001-04-26 |
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