CN118648205A - 发光器件的制造方法以及制造装置、和激光元件基板 - Google Patents

发光器件的制造方法以及制造装置、和激光元件基板 Download PDF

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Publication number
CN118648205A
CN118648205A CN202380020305.6A CN202380020305A CN118648205A CN 118648205 A CN118648205 A CN 118648205A CN 202380020305 A CN202380020305 A CN 202380020305A CN 118648205 A CN118648205 A CN 118648205A
Authority
CN
China
Prior art keywords
substrate
light emitting
manufacturing
emitting device
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380020305.6A
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English (en)
Chinese (zh)
Inventor
川口佳伸
村川贤太郎
神川刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of CN118648205A publication Critical patent/CN118648205A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/02—Manufacture or treatment using pick-and-place processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN202380020305.6A 2022-02-10 2023-02-09 发光器件的制造方法以及制造装置、和激光元件基板 Pending CN118648205A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-019835 2022-02-10
JP2022019835 2022-02-10
PCT/JP2023/004376 WO2023153476A1 (ja) 2022-02-10 2023-02-09 発光デバイスの製造方法および製造装置並びにレーザ素子基板

Publications (1)

Publication Number Publication Date
CN118648205A true CN118648205A (zh) 2024-09-13

Family

ID=87564539

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380020305.6A Pending CN118648205A (zh) 2022-02-10 2023-02-09 发光器件的制造方法以及制造装置、和激光元件基板

Country Status (5)

Country Link
US (1) US20250118943A1 (https=)
EP (1) EP4478564A4 (https=)
JP (1) JPWO2023153476A1 (https=)
CN (1) CN118648205A (https=)
WO (1) WO2023153476A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021004159T5 (de) * 2020-08-04 2023-06-22 Panasonic Holdings Corporation Halbleiter-Lichtemissionsvorrichtung

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749284A (en) * 1980-09-09 1982-03-23 Matsushita Electric Ind Co Ltd Manufacture of light-emitting display device
JPS63157969U (https=) * 1987-04-01 1988-10-17
JP3090427B2 (ja) * 1997-02-27 2000-09-18 日本電信電話株式会社 はんだバンプの接続方法
WO2001042820A2 (en) * 1999-12-02 2001-06-14 Teraconnect, Inc. Method of making optoelectronic devices using sacrificial devices
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
JP2002169064A (ja) * 2000-11-30 2002-06-14 Kyocera Corp 光部品実装用基板及びその製造方法並びに光モジュール
JP2006332521A (ja) * 2005-05-30 2006-12-07 Fujifilm Holdings Corp 半導体レーザー装置
KR100754407B1 (ko) * 2006-06-08 2007-08-31 삼성전자주식회사 서브마운트 및 이를 구비하는 멀티 빔 레이저 다이오드모듈
JP2008252069A (ja) * 2007-03-06 2008-10-16 Sanyo Electric Co Ltd 半導体レーザ素子の製造方法および半導体レーザ素子
JP5521611B2 (ja) * 2010-02-15 2014-06-18 ソニー株式会社 光装置および光機器
US10181546B2 (en) * 2015-11-04 2019-01-15 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-LED
JP6551245B2 (ja) * 2016-01-22 2019-07-31 日亜化学工業株式会社 発光装置の製造方法
JP2019220666A (ja) 2018-06-19 2019-12-26 株式会社ブイ・テクノロジー 半導体素子形成サファイア基板、及び前記半導体素子形成サファイア基板の製造方法、並びに前記半導体素子の転写方法
JP6705479B2 (ja) * 2018-09-12 2020-06-03 日亜化学工業株式会社 光源装置の製造方法
CN113035736B (zh) * 2019-12-09 2025-02-25 群创光电股份有限公司 电子装置的制作方法
CN112885822B (zh) * 2020-07-27 2023-08-01 友达光电股份有限公司 显示装置的制造方法

Also Published As

Publication number Publication date
WO2023153476A1 (ja) 2023-08-17
JPWO2023153476A1 (https=) 2023-08-17
EP4478564A1 (en) 2024-12-18
EP4478564A4 (en) 2026-04-22
US20250118943A1 (en) 2025-04-10

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