CN1185642C - 可重写的光信息记录介质 - Google Patents

可重写的光信息记录介质 Download PDF

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CN1185642C
CN1185642C CNB008017204A CN00801720A CN1185642C CN 1185642 C CN1185642 C CN 1185642C CN B008017204 A CNB008017204 A CN B008017204A CN 00801720 A CN00801720 A CN 00801720A CN 1185642 C CN1185642 C CN 1185642C
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G·-F·周
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Koninklijke Philips NV
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Abstract

在此提供一种可重写光信息介质，其中包括基片(1)、第一介电层(2)、基于AgaInbSbcTed或GeaInbSbcTed的相变记录层(3)、第二介电层(4)、以及金属镜面层(5)，其中2＜a＜8、0＜b＜6、55＜c＜80、15＜d＜30、a+b+c+d＝100，以及所述记录层(3)的层厚在5和15nm范围内。这种介质适用于高密度和高数据率相变光记录系统和介质，例如DVD+RW、DVR-红和-蓝。

Description

可重写的光信息记录介质
本发明涉及一种利用激光束的可改写高速光信息记录介质，所述介质包括载有叠层的基片，该叠层按次序包括第一介电层、包括由锑(Sb)和碲(Te)所构成的相变记录材料的记录层、第二介电层以及金属镜面层。
本发明还涉及在高存储密度和高数据率应用中采用这种光记录介质。
基于相变原理的光信息或数据存储是另人注目的，而因为它结合了可直接重写(DOW)与高存储密度这两个特点，并具有容易与只读系统兼容的性能。相变光记录涉及使用聚焦激光束在薄的结晶膜中形成亚微米量级的无定形记录标志。在记录信息过程中，该介质相对于聚焦激光束移动，该激光束根据要被记录的信息而调制。因此，在相变记录层中出现淬火(quenching)现象，并且在记录层的曝光区域上形成无定形的信息位，而在不曝光区域保持结晶态。写入的无定形标志的擦除是通过用相同的激光加热重新结晶而实现的。无定形标志表示数据位，其可以通过低功率聚焦的激光束由基片再现。无定形标志相对于结晶记录层的反射差异产生被调制的激光束，其随后由检测器根据编码记录的数字信息转换为光电流。
在相变光记录中的一个最重要的需求是高数据率。高数据率要求该记录层具有高的结晶化速度，即短的结晶时间。为了保证以前记录的无定形标志可以在直接改写过程中重新结晶，记录层应当具有适当的结晶时间，以匹配介质相对于激光束的线速度。如果结晶速度不够高到足以匹配介质相对于激光束的线速度，则来自以前记录的旧数据(无定形标志)不能够在DOW过程中完全被擦除(重新结晶)。这造成高的噪声电平。高的结晶速度在高密度记录和高数据率的应用中特别重要，例如盘状的DVD+RW、DVR-红和蓝以及CD-RW，其中整个擦除时间(CET)必须大约比60纳秒更短。对于DVD+RW，其在每张120mm直径的盘上具有4.7GB的记录密度，需要33M位/秒的用户数据位速率，并且对于DVR-红，需要35M位/秒的用户数据位速率。对于可改写的相变光记录系统，例如DVR-蓝(用蓝激光进行的数字视频记录操作)，需要高于50M位/秒的用户数据位速率。
在开篇中所述类型的光信息记录介质可从由申请人递交的美国专利US 5,876,822中得知。已知的相变型介质包括载有叠层的盘状基片，其中按次序包括第一介电层、相变锗-锑-碲(Ge-Sb-Te)记录材料的记录层、第二介电层以及金属反射层。这种叠层可以被称为IPIM结构，共中M表示反射或镜面层，I表示介电层，并且P表示相变记录层。所述专利公开了CET值可以通过优化的记录材料的合成物而缩短。包含这种记录材料的记录层的CET值随着记录层的厚度增加而减小。最短的CET值在25和35nm之间的厚度获得。实验表明，当把氧添加到该记录材料中，并且把SiC顶层应用到该叠层中时，利用这种记录层可以获得40M位/秒的用户数据位速率。
本发明的一个目的是特别提供一种可重写的光信息介质，其适合于高速光记录，例如DVD+RW、DVD-红和DVD-蓝、以及用于DOW。该记录层的CET值应当为60纳秒(ns)或更短。特别地，该介质应当具有至少50M位/秒的用户数据位速率。高速记录在本文中应当被认为是指该介质相对于激光束的线速度至少为4.8米/秒，这是根据压缩光盘(CD)标准的速度的4倍。
通过在开篇中所述的光信息介质可以实现根据本发明的这些目的，其特征在于，该记录材料包括由化学式GeaInbSbcTed(按照原子百分比)所确定的组合物，其中
2＜a＜8
0＜b＜6
55＜c＜80
15＜d＜30；a+b+c+d＝100，以及
该记录层具有5-15nm(纳米)的厚度。
与基于Ge-Sb-Te的记录材料相反，基于Ge-In-Sb-Te的记录材料表现出随着厚度减小而减小的CET值。最短的CET值在小于15nm的厚度中获得，所述数值小于60纳秒或者甚至小于40纳秒。具有在所要求权利范围之外的a-，b-，c-或d-数值的组合物的CET值不小于60纳秒，即使在8nm的厚度也是如此。为了实用的原因，该记录层的厚度至少为5nm。用厚度在7和14nm之间的记录层可以获得最佳结果。
请注意在欧洲专利EP-B-569664中公开一种具有记录层的光信息记录介质，该记录层具有记录材料(AgSbTe2)0.43(InSb0.77)0.57，其可以改写为Ag15.7In20.9Sb31.9Te31.5。最佳的层厚度在20和300nm之间。在该专利说明书中没有指出CET值或用户数据位速率。
Ge-In-Sb-Te合金表现出比Ag-In-Sb-Te材料更好的热稳定性。
当需要50000次重写循环，该介质的结晶性可以由数值M50000/M0所表示，这时在50000循环和0循环之后的光对比度的相对变化。M被定义为(RH-RL)/RH，其中，RH和RL是结晶态和无定形态的记录材料的反射率。在每次循环中，写入的无定形标志被通过激光束加热而重新结晶化来擦除，而新的无定形标志被写入。M50000/M0的理想值为1.0，即光对比度在循环之后没有改变。
第一介电层的厚度对于CET和结晶性数值M50000/M0没有明显的影响，该第一介电层即与伺服记录道相邻的层面，因此通常在基片与相变记录层之间。因此，可以为其它原因，例如对于光学原因，改变该层面的厚度而不影响该叠层的热性能。该层面防止记录层受潮，并且基片防止热损坏，并且优化光对比度M。从抖动的角度来看，第一介电层的厚度最好至少为70nm。从光对比度的角度来看，该层面的厚度最好限于500nm。
对于第二介电层，即在记录层与金属镜面层之间的层面，的最佳厚度范围在15和50nm之间，最好在20和40nm之间。当该层面太薄，则记录层与金属镜面层之间的隔热性受到不良的影响。结果，记录层的冷却速率增加，这导致缓慢的结晶过程和不良的循环能力。冷却速率可以通过增加第二介电层的厚度而降低。
CET值对在20至300nm范围内的金属镜面层的厚度不敏感。但是当金属镜面层比60nm更薄时，循环能力(cyclability)受到不良影响，因为冷却速率在这种厚度下太慢。当金属镜面层是200nm或更厚时，循环能力进一步下降，并且因为热传导增加，因此记录和擦除功率必须较高。最好，金属镜面层的厚度在80和150nm之间。
第一和第二介电层可以由ZnS和SiO2的混合物，例如(ZnS)80(SiO2)20所制成。其它代替物例如为SiO2，TiO2，ZnS，Si3N4，AlN和Ta2O5。最好，使用碳化物SiC，WC，TaC，ZrC或TiC。这些材料具有比ZnS-SiO2混合物更高的结晶速度和更好的循环能力。
对于金属镜面层，可以使用如下金属Al，Ti，Au，Ni，Cu，Ag，Rh，Pt，Pd，Cr，Mn，Mo，W和Ta，以及这些金属的合金。适当合金的例子是AlTi，AlCr和AlTa。
反射层和介电层可以通过蒸气淀积或溅射而形成。
信息介质的基片至少对于激光波长是透明的，例如由聚碳酸酯(polycarbonate)、聚甲基丙烯酸甲酯(polymethyl methacrylate(PMMA))、无定形聚烯烃(polyolefin)或玻璃。在典型例子中，基片是盘状的，并且具有120mm的直径以及0.1、0.6或1.2mm的厚度。当使用0.6mm或1.2mm的基片时，层面可以形成在该基片上，以第一介电层为开始依次形成记录层等等。激光束通过基片的入射表面进入该叠层。在该基片上的叠层厚度还可以按照相反次序形成(相反次序的薄膜相变叠层)，即，以金属镜面层为开始依次形成第二介电层、相变层等等。然后最后介电层(其现在为第一介电层)具有上述材料之一构成的具有0.1mm(100μm)厚度的光学品质的透明层或者薄片。激光束通过该透明层的入射表面进入叠层。
另外，该基片可以用合成树脂可弯曲条带所形成，例如由聚酯薄膜所制成的。按照这种方式，将获得用于光带记录器中的光带，例如基于快速旋转的多边形。在这种设备中，反向激光束可以横过该条带表面扫描。
在记录层的一侧上的盘状基片表面最好具有可被光学扫描的伺服记录道。该伺服记录道通常由螺旋形状的凹槽所构成，其通过在注模或压印过程中通过模子在基片上形成的。该凹槽还可以在合成树脂层的复制处理中形成，该合成树脂例如丙烯酸酯(acrylate)的紫外光固化层，其分离位于基片上。在高密度记录中，这种凹槽具有例如0.7-0.8μm的间距和0.5μm的宽度。
最好，该叠层的最外层通过保护层与外界隔离，该保护层例如紫外光固化的聚(甲基)丙烯酸酯。
高密度记录和擦除可以利用短波长激光而实现，例如具有675nm或更短的波长(红至蓝)。
相变记录层可以通过适当对象的蒸发淀积或溅射而施加到基片上。如此淀积的层面是无定形的，并且表现出较低反射率。为了构成具有高反射率的适当记录层，该层面必须首先被完全结晶化，这通常被称为初始化。为此目的，记录层可以在熔炉中加热到记录材料的结晶化温度以上的温度，例如180℃。如果使用合成树脂材料，例如聚碳酸酯，则记录层还可以通过足够功率的激光束加热。这例如可以在记录器中实现，在这种情况下激光束扫描运动的记录层。无定形层然后被局部加热到记录层的结晶化温度，而不使该基片受到有害的热负荷。
如果需要的话，可以在基片和第一介电层之间插入另一个薄的金属层M’，从而形成所谓的M’IPIM结构。尽管该结构变得更加复杂，但是附加的金属层增加了记录层的冷却速度以及光对比度M。
用II+PI+IM叠层获得更短的CET层，其中，I、P和M具有上述含意，并且其中I+是碳化物层。在该叠层中，记录层P夹在两个碳化物层I+之间。第一和第二碳化物层最好是SiC，ZrC，TaC，TiC和WC的组中的一种材料，其结合了优良的循环能力和短的CET的特点。SiC是最佳材料，因为其光学、机械和热性能最好；另外其价格相对较低。
第一和第二碳化物层的厚度最好在2和8nm之间。当其厚度较小时，该碳化物的相对较高的热导率对叠层仅仅具有小的影响，从而便于叠层的热设计。
对于高密度台-槽记录特别有用的是在该叠层中的附加光吸收层。附加光吸收层A的结果是在无定形态(Aa)以及结晶态(Ac)之间的光吸收率的差别最小化，从而减小这些状态的光相差。Ac和Aa之间的差别应当接近于0，或者最好Ac≥Aa。
光吸收层A的厚度具有在0.5和20范围内的n/k比率，最好在0.6和16范围内。这些数值给出光吸收率和透射率之间的平衡。满足这些条件的材料的例子是从包括Mo，W，Pd，Pt，Co，Ni，Mn，Ta，Cr，Ti和Hf的组中选择出来的金属，以及从包括PbS，Ge，InP和Si中选择出来的半导体材料。最好是Si和Ge，因为它们便宜并且容易使用。
为了在光吸收和透射之间获得适当的平衡，并且根据所选择材料的n/k比率，光吸收层的厚度优选在200nm之间，更优选地在10和100nm之间。对于Si厚度约为75nm，对于Mo厚度约为35nm，对于Ge厚度约为55nm。
附加的光吸收层A可能导致叠层结构IPIAIM，II+PI+AM，II+PI+IAM或II+PI+AIM，其中I、I+、P和M具有上述含义。最好在叠层中第三介电层位于光吸收层和第二碳化物层之间。这种第三介电层I3可以用于优化叠层的热性能，并且避免第二碳化物层与光吸收层之间的熔合。这种叠层具有如下结构：II+PI+I3AIM。
通过实施例并参照附图更详细地阐述本发明，其中
图1示出根据本发明的光信息介质的示意截面示图，
图2示出根据本发明具有Ag-In-Sb-Te记录材料的记录层的CET(以纳秒为单位)与厚度d(以nm为单位)之间的关系，
图3示出根据本发明的具有两种不同Ag-In-Sb-Te(曲线A和B)以及两种不同Ge-In-Sb-Te(曲线C和D)记录材料的记录层的CET(以纳秒为单位)与厚度d(以nm为单位)之间的关系，
图4示出不根据本发明的具有Ag-In-Sb-Te记录材料的记录层的CET(以纳秒为单位)与厚度d(以nm为单位)之间的关系。
实施例1
图1简要示出根据本发明的光信息盘的截面的一部分。参考标号1表示具有120mm直径和1.2mm厚度的玻璃盘状基片。该基片1具有下述结构的IPIM叠层：
-具有70nm厚度的(ZnS)80(SiO2)20的介电层2；
-具有厚度d的Ag5.0In5.5Sb65.0Te24.5的记录层3；
-具有25nm厚度的(ZnS)80(SiO2)20的介电层4；
-具有100nm厚度的铝金属镜面层5。
所有层面经过溅射形成。记录层1的初始结晶状是通过在记录器中退火淀积的无定形合金而获得，其中记录层被通过连续激光束加热到其结晶化温度以上。
用于信息记录、再现和擦除的激光束通过基片1进入记录层3。该光束由箭头6表示。无定形标志用功率为Pw＝1.25Pm(Pm＝熔化阈值功率)持续时间为100纳秒的单激光脉冲来写入。擦除功率是Pw/2。
在图2中示出用于记录材料的相变记录层的CET(以纳秒为单位)(即写入无定形标志的结晶化完成的时间)与厚度d(以nm为单位)之间的相互关系。从图2可以清楚看出CET随着d的减小而减小。当记录层比15nm更薄时，CET值变得小于60纳秒。
在同一图中，CET值(由▲所表示)对具有12nm的厚度并且包含II+PI+IM结构的相同记录材料的记录层给出，其中I+是具有5nm厚度的SiC层。在该叠层中，记录层P夹在两个碳化物层I+之间。另一个层面的厚度和材料与上述相同。显然该CET值比在上述IPIM叠层中更短。
实施例2
采用具有组合物Ag4.3In4.3Sb67.4Te24.0的记录层3重复实施例1。在图3中的曲线A示出CET与记录层的厚度d之间的相互关系。从图3显然可以看出当厚度d为15nm或更小时，CET小于60纳秒。
实施例3
采用具有组合物Ag3.6In3.1Sb75.1Te18.2的记录层3重复实施例1。在图3中的曲线B示出CET与记录层的厚度d之间的相互关系。从图3显然可以看出当厚度d为15nm或更小时，CET小于42纳秒。
实施例4
采用具有组合物Ge5.6In2.2Sb71.2Te21.0的记录层3重复实施例1。在图3中的曲线C示出CET与记录层的厚度d之间的相互关系。从图3显然可以看出当厚度d为15nm或更小时，CET小于55纳秒。
具有12nm厚度的记录层的记录介质(CET为44纳秒)是用该记录材料制造的。通过采用具有405nm波长的蓝激光，可以获得每张120mm光盘22GB的记录密度以及66M位/秒的用户数据位速率。
实施例5
采用具有组合物Ge5.1In2.6Sb73.2Te19.1的记录层3重复实施例1。在图3中的曲线D示出CET与记录层的厚度d之间的相互关系。从图3显然可以看出当厚度d为15nm或更小时，CET小于45纳秒。
对比例(不根据本发明)
采用具有组合物Ag3.0In12.0Sb51.7Te33.3的记录层3重复实施例1。在该组合物中，In和Te的成份在所要求的范围之外。图4示出CET与记录层的厚度d之间的相互关系。从图4显然可以看出即使当厚度d为8nm或更小时，CET不小于60纳秒。
根据本发明，提供一种可重写光信息记录介质，其适用于直接重写和高速记录，例如DVD+RW、DVR-红和DVR-蓝。

Claims (6)

1.一种通过激光束可重写的高速光信息记录介质，所述介质包括载有叠层的基片，该叠层按次序包括第一介电层、包括由Sb和Te所构成的相变记录材料的记录层、第二介电层以及金属镜面层，其特征在于，该记录材料包括由化学式GeaInbSbcTed所确定的组合物，其中
2＜a＜8
0＜b＜6
55＜c＜80
15＜d＜30；a+b+c+d＝100，以及
该记录层具有5-15nm的厚度。
2.根据权利要求1所述的光信息介质，其特征在于，该记录层具有7至14nm的厚度。
3.根据权利要求1所述的光信息介质，其特征在于，
2＜a＜6
2＜b＜6
60＜c＜80
15＜d＜25；a+b+c+d＝100。
4.根据权利要求1所述的光信息介质，其特征在于，该记录层夹在两个碳化物层之间，两个层面具有在2和8nm之间的厚度。
5.根据权利要求1所述的光信息介质，其特征在于，该叠层包括由具有0.5至20的n/k比率的材料所制成的光吸收层，其中n是折射率，k是消光系数，并且该光吸收层具有2至200nm之间的厚度。
6.一种使用在任何上述一项权利要求中所述的光信息介质进行高速记录的方法，其中激光束与介质之间的相对速率至少为4.8米/秒。
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JP2003507218A (ja) 2003-02-25
CN1320260A (zh) 2001-10-31
ID28234A (id) 2001-05-10
WO2001013370A1 (en) 2001-02-22
US6638594B1 (en) 2003-10-28
TW567486B (en) 2003-12-21

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