CN1221960C - 光学信息介质及光学记录方法 - Google Patents

光学信息介质及光学记录方法 Download PDF

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CN1221960C
CN1221960C CNB018050336A CN01805033A CN1221960C CN 1221960 C CN1221960 C CN 1221960C CN B018050336 A CNB018050336 A CN B018050336A CN 01805033 A CN01805033 A CN 01805033A CN 1221960 C CN1221960 C CN 1221960C
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dielectric layer
layer
recording layer
recording
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CN1401117A (zh
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G·-F·周
J·C·N·里珀斯
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Koninklijke Philips NV
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Abstract

提供了一种用于利用激光束(10)进行高速可擦除记录的光学信息介质(20)。基板(1)上有层叠(2)，层叠(2)带有第一介电层(5)和第二介电层(7)、位于第一介电层(5)和第二介电层(7)之间的相变记录层(6)及反射层(3)。记录层(6)有Ge和Te的化合物，而且至少第一介电层(5)由Ta和Si的氧化物、Si和Al的氮化物或Si的碳化物组成，并与记录层(6)接触。所述第一介电层(5)和第二介电层(7)的最大厚度为15纳米。记录层(6)还可以包含数量高达5at.%的O或N。有低CET值的宽可用成分范围可以获得。从而实现了高数据速率。

Description

光学信息介质及光学记录方法
技术领域
本发明涉及一种用于利用有激光波长的激光束进行可擦除记录的光学信息介质，所述介质包括基板和在其上提供的层的层叠，该层的层叠包括第一介电层和第二介电层，位于第一介电层和第二介电层之间的能够在非晶态和晶态之间改变的记录层，及位于第一介电层和第二介电层之一的远离记录层的一个侧面的反射层。
本发明还涉及利用这种光学信息介质的光学记录方法。
背景技术
一种在开始段落中所描述类型的光学信息介质可以从发表在《应用物理》读者投稿栏49(1986)502上的M.Chen，K.A.Rubin和R.W.Barton的一篇文章中得以了解。
基于相变原理的光学数据存储介质是有吸引力的，因为它在与只读光学数据存储系统很容易兼容的情况下，结合了直接重写(DOW)和高存储密度的可能性。相变光学记录包括利用聚焦的相对高功率激光束的亚微米尺寸的非晶态记录标记在晶态记录层中的形成。在信息的记录过程中，介质相对于聚焦的激光束移动，根据要记录的信息该激光束被调制。标记在高功率激光束熔化晶态记录层的时候形成。当激光束被切断并/或随后相对于记录层移动时，已熔化标记的冷却在记录层发生，在记录层的暴露区域留下非晶态的信息标记，而在未暴露区域仍保持晶态。对已写入的非晶态标记的擦除是在不熔化记录层的情况下，通过用同样的激光在低功率电平下加热的再结晶实现的。该非晶态标记表示可以被相对低功率的聚焦激光束读取的数据位，例如，通过基板。非晶态标记与晶态记录层的反射差值导致被调制的激光束，该激光束随后被探测器根据所记录的信息转换成调制的光电流。
相变光学记录中最重要的一个要求是高数据速率，这意味着数据可以至少30M比特/s的速率被写入或重写入介质。这样的高数据速率要求记录层有高结晶速度，即短结晶时间。为了确保先前记录的非晶态标记能够在直接重写时被再结晶，记录层必须有适当的结晶速度来匹配介质与激光束的相对速度。如果结晶速度不够高，则先前记录的表示旧数据的非晶态标记就不能够在DOW时被完全擦除，称为再结晶。这引起高噪声电平。高结晶速度在高密度记录和高数据速率光学记录介质中尤其需要，如在光盘状的DVD+RW、DVR-红和蓝中，DVD+RW是新一代高密度 Digital  Versatile  Disc+RW的缩写，其中RW指的是这种光盘的可重写性，DVR是 Digital  Video  Recording光学存储盘的缩写，其中红和蓝指的是所使用的激光波长。对于这些光盘，完全擦除时间(CET)最多只能是60ns。CET定义为在晶态环境下用于将已写入的非晶态标记完全结晶的一个擦除脉冲的最短持续时间，这是静态测量的。对于在每120mm光盘上有4.7GB记录密度的DVD-RW，33M比特/s的数据位速率是必须的，而对于DVR-红，所述速率为35M比特/s。对于可重写相变光学记录系统，如DVR-蓝，高于50M比特/s的用户数据速率是需要的。
已知的相变类型介质包括支撑层的层叠的基板，该层的层叠依次包括第一介电层、有完整的相变GeTe化合物的记录层、第二介电层和反射层。这样一种层的层叠可以称为IPIM-结构，其中M表示反射或镜面层，I表示第一或第二介电层，而P表示相变记录层。在激光波长为350-700nm时，Ge和Te化合物的记录层在非晶态和晶态之间有相对高的相对反射差值。此外由于大约180℃的相对高的结晶温度，Ge和Te化合物的记录层有良好的热稳定性。高热稳定性导致高存档寿命，这对于存储介质来说通常是必须的。
已知介质的一种缺点在于Ge和Te化合物记录层的CET对成分的比率非常敏感。只有精确的50∶50比率才能给出一个可以接受的短CET。敏感性导致差的制造可重复性，这是一个缺点。
发明内容
本发明的一个目的是提供一种在开始段落中所描述类型的光学信息介质，其适用于高数据速率光学记录，如DVR-蓝，有50ns或更短的CET值且易于制造。
这个目的通过记录层包含通式为GexTe100-x的化合物来实现，其中：
x为Ge所占的原子百分比，且30＜x＜70，
第一介电层包括选自Ta和Si的氧化物、Si和Al的氮化物及Si的碳化物的化合物，而且其与记录层接触，并且第一介电层和第二介电层的最大厚度为15nm。
已经发现第一介电层的这些氧化物、氮化物和碳化物显著地扩大了记录层Ge和Te化合物的可用成分范围。可用成分范围是有低CET的Ge和Te成分范围。而且，当使用这些氧化物、氮化物和碳化物的时候，CET令人惊讶地变得非常低，例如，对于30＜x＜70的成分范围，大约为2或更多的系数。宽的可用成分范围对于制造是有利的，因为Ge和Te化合物的成分可以显著变化而不增加CET。精确的50∶50比率、x＝50对于获得好的结果不再是必须的。
在一种实施方案中，第二介电层及第一介电层包括选自Ta和Si的氧化物、Si和Al的氮化物及Si的碳化物的化合物，且其与记录层接触。这样做的好处在于记录层的两侧都可以与Ta和Si的氧化物、Si和Al的氮化物及Si的碳化物的介电层接触，这导致更低的CET，例如大约为3的系数，及记录层化合物更宽的成分范围。
优选地，第一介电层和第二介电层包括选自Ta2O5和Si3N4的化合物。这些材料具有容易制造的优点，而且已经显示非常适于扩大可用成分范围和降低CET。
第一介电层和第二介电层的厚度至多为15nm。由于Ta2O5和Si3N4的热传导性优于(ZnS)80(SiO2)20的热传导性，与Ta2O5或Si3N4层接触的记录层的功率敏感性是比较低的，其中(ZnS)80(SiO2)20是一种常用的介电层材料。但是，当使用比15nm薄的Ta2O5-或Si3N4-层时，对记录功率敏感性的影响是不存在或几乎不存在的。
在一种优选的实施方案中，第一介电层和第二介电层的厚度为2-10nm。范围2-10nm的层对记录的功率敏感性没有显著的影响。比2nm薄的层不容易可靠地制造，因为对这么薄的层的厚度控制是困难的，而且在这么薄的层中出现气泡的概率是比较高的。
优选地是40＜x＜60，其中x是记录层化合物GexTe100-x通式中的值。这个范围的x值尤其适于获得对高数据速率记录必须的CET。由于光学记录介质上的标记大小基本上是由记录光点的大小决定的，而该记录光点对于给定的激光波长和记录透镜的数值孔径是相对固定的，所以高数据速率记录要求高速记录。高速记录在这种环境中应当理解为表示介质相对于激光束至少7.2m/s的线速度，这个速度是根据CD标准速度的六倍。优选地，CET值应当低于45ns，这对于八倍于CD-速度的9.6m/s线速度是必须的，乃至低于35ns，这对于十二倍于CD-速度的14.4m/s线速度是必须的。介质的抖动应在一个低而恒定的水平。此外，介质应当有良好的热稳定性。
记录层的化合物还可以包含数量高达5at.％的O或N。O和N的添加都导致了更短的CET，高达1.5的系数。当氧或氮在化合物中的数量为0.01至5at.％的小量，优选地为1.5至2.0at.％时，CET值可以显著地减小。由于获得记录层过程环境，低于0.01at.％的氧或氮值几乎是得不到的，例如，通过在惰性气体气氛中溅射，其中氧或氮环境压力将不可避免地存在。在高于5at.％的氧或氮浓度时，记录层的CET值上升到高于50ns，而且抖动和DOW循环能力都朝不利的方向被影响。而且在DOW期间非晶态和晶态反射的最大变化也变得无法接受的小。此外，因为氧化物或氮化物易于形成，当氧或氮的含量太高时，记录的非晶态标记可能变得不稳定。
反射层可以包括选自金属Al、Ti、Au、Ag、Cu、Rh、Pt、Pd、Ni、Co、Mn、Cr、Mo、W、Hf和Ta中的至少一种，包括所述元素的合金。
附加的介电层可以位于临近第一和/或第二介电层以便保护记录层不受潮，将记录层同基板和/或反射层热隔离，并优化光学对比度。通常激光在到达记录层之前先通过第二介电层。
特别地，第三介电层可以位于，即临近第一介电层的位置并在第一介电层和反射层之间，在远离记录层的一侧。厚度通常为10至50nm，优选地为15至35nm。当这层太薄时，记录层/第一介电层和另一层，即反射层之间的热隔离朝不利的方向被影响。从而记录层的冷却速度增加，这导致慢的再结晶或擦除过程及差的循环能力。通过增加第三介电层的厚度来降低冷却速度。
第四介电层可以位于，即临近第二介电层的位置，在远离记录层的一侧。
从抖动的角度看，激光首先入射通过的介电层或附近介电层的整个厚度优选地为至少70nm。鉴于在晶态环境中读出非晶态记录标记的最佳光学对比度，依赖于所使用的激光波长和介电层的折射率，这个层或这些层的厚度被设置为一个大于70nm的最优值。可选地，该层的层叠与基板相对的最外层通过一个保护层，例如UV光固化的聚(甲基)丙烯酸脂同环境隔离。基板和保护层可以相互交换位置，在这种情况下激光在进入层的层叠之前首先通过基板。
CET值对20至200nm之间的反射层厚度有小的敏感。但是当反射层比60nm薄时，因为冷却速度太低，循环能力朝不利的方向被影响。当反射层为160nm或更厚时，循环能力进一步变坏，而且由于增加的热传导，记录和擦除功率必须高。优选地反射层的厚度为80至120nm。
附加的介电层，即第三和第四介电层，可以包括ZnS和SiO2的混合物，例如(ZnS)80(SiO2)20。
反射层和介电层都可以由蒸汽淀积或溅射来提供。
当激光首先入射通过信息介质的基板时，它至少对激光波长是透明的，而且由例如聚碳酸脂、聚甲基丙烯酸甲脂(PMMA)、非晶态聚烯烃或玻璃制成。在一种典型的实例中，基板是盘状的，而且直径为120mm，厚度为0.1、0.6或1.2mm。
记录层的层叠一侧基板的表面优选地拥有可以光学扫描的伺服轨迹。这个伺服轨迹通常是螺旋状的凹槽，而且在基板中通过溅射造型法或冲压法模压形成。这些凹槽可选地可以用复制的方法在透明垫片层的合成树脂，例如UV光固化的丙烯酸脂中形成，其在基板上是单独提供的。在高密度记录中，这样的凹槽有例如0.6-0.8μm的间距和0.5μm的宽度。
高密度记录和擦除可以通过使用短波长激光来实现，例如，使用670nm或更短的波长。
通过真空淀积、电子束真空淀积、化学蒸汽淀积、离子电镀或溅射，相变记录层可以应用到基板。当使用溅射时，含所需数量氧或氮的Ge-Te溅射靶可以应用，或者应用由Ge-Te靶制成，从而控制溅射气体中氧或氮的数量。在实际中，溅射气体中氧或氮的体浓度为近乎0至10％。淀积的层是非晶态的，而且呈现低反射。为了构造带高反射的合适反射层，这一层必须首先被完全结晶，这通常被称为初始化。为了这个目的，记录层可以在熔炉中加热到超过Ge-Te、Ge-Te-O或Ge-Te-N化合物的结晶温度，例如190℃。合成树脂基板，例如聚碳酸脂，可以作为选择被有足够功率的激光束来加热。这可以在例如记录器中实现，在这种情况下激光束扫描移动的记录层。然后非晶态层被局部加热到使该层结晶所要求的温度，而不需要使基板承受不利的热负荷。
附图说明
根据本发明的光学信息介质将通过一个有代表性的实施方案并参考相应的附图更加详细地被说明。
图1示出了根据本发明的光学信息介质的横断面示意图。尺寸未按一定的比例绘制；
图2示出了与GexTe100-x记录层中x值相关的完全擦除时间(CET以ns计)的两个曲线图，比较已知介质的CET和根据本发明介质的CET；
图3示出了根据本发明介质的与Ge49.5Te50.5记录层中氧数量相关的完全擦除时间(CET以ns计)的曲线图。
具体实施方式
在图1中，用于利用激光束10进行可擦除记录的信息介质20有基板1。层的层叠2在其上面提供。层的层叠2有第一介电层5和第二介电层7，能够在非晶态和晶态之间改变的记录层6。记录层位于第一介电层5和第二介电层7之间。存在反射层3。记录层6包括通式为Ge49.5Te50.5的化合物。记录层6的化合物还附加地可以包括数量高达5at.％的O或N。记录层的厚度为28nm，对670nm的激光束是最优的。
第一介电层5和第二介电层7是Si3N4的，而且与记录层6接触。Si3N4一种好的代替物是Ta2O5。第一介电层5和第二介电层7的厚度为5nm。
反射层3包含厚度为100nm的Al。
是例如(ZnS)80(SiO2)20的第三介电层4和第四介电层8分别临近于第一介电层5和第二介电层7。第三介电层的厚度是20nm，而第四介电层的厚度是90nm。在这样一种层叠中，对于670nm的激光波长，非晶反射Ra是3.8％，而结晶态反射Rc是36.5％。
基板1是直径为120mm、厚度为0.6mm的聚碳酸脂盘状基板。
由例如UV固化树脂Daicure SD645制成的厚度为100μm的保护层9临近于第四介电层8。
当使用405nm的激光波长时，记录层6的最佳厚度是15nm，而第三和第四介电层4、8的厚度分别为20和135nm。层叠2的其它层和基板1保持不变。在这样一种层叠2中，对于405nm的激光波长，非晶态反射Ra是0.8％，而晶态反射Rc是22.9％。
图2示出了与GexTe100-x记录层中x值相关的完全擦除时间(CET以ns计)的曲线图21，与根据图1 II’PI’IM层叠中Si3N4的第一和第二介电层接触，但没有向记录层6中添加氧。为了比较，示出了当第一和第二介电层的材料由标准材料(ZnS)80(SiO2)20替代时的曲线图22。得到的结论是在根据本发明的使用根据本发明第一和第二介电层的介质中实现了CET大约为3的系数的下降。
图3示出了在根据图1的层叠中记录层6的Ge49.5Te50.5化合物中O含量高达3.5at.％时对CET(以ns计)影响的曲线图23。相似的效果可以通过添加氮来获得。这样，在二种最佳的实施方案中，记录层6的通式为Ge49.5Te50.5，其中存在1.87at.％的氧。
根据本发明，提供了一种可重写的相变光学信息介质，如DVR-蓝，有Ge-Te化合物的记录层，与至少一个包含Ta和Si的氧化物、Si和Al的氮化物或Si的碳化物的化合物介电层接触，有宽的可用成分范围并因此更易制造，有低的完全擦除时间(CET)值并适于直接重写和高数据速率记录，而且在7.2m/s或更高的线速度时呈现良好的循环能力和低抖动。记录层中氧或氮的存在更将CET值降至低于45ns。

Claims (9)

1.一种用于利用有激光波长的激光束(10)进行可擦除记录的光学信息介质(20)，所述介质(20)有基板(1)和在所述基板上面提供的层的层叠(2)，层叠(2)包括第一介电层(5)和第二介电层(7)，位于第一介电层(5)和第二介电层(7)之间的能够在非晶态和晶态之间改变的记录层(6)，及反射层(3)，该反射层与记录层分别位于所述第一介电层和第二介电层之一的不同侧，
其特征在于记录层(6)包含通式为GexTe100-x的化合物，其中：
x是Ge的原子百分比，且30＜x＜70，
第一介电层(5)包含选自Ta和Si的氧化物、Si和Al的氮化物及Si的碳化物的化合物，而且与记录层(6)接触，并且所述第一介电层(5)和第二介电层(7)的最大厚度为15纳米。
2.权利要求1中所述的光学信息介质(20)，其特征在于第二介电层(7)包含选自Ta和Si的氧化物、Si和Al的氮化物及Si的碳化物的化合物，而且与记录层(6)接触。
3.权利要求2中所述的光学信息介质(20)，其特征在于第一介电层(5)包含选自Ta2O5和Si3N4的化合物，而第二介电层(7)包含选自Ta2O5和Si3N4的化合物。
4.权利要求3中所述的光学信息介质(20)，其特征在于第一介电层(5)和第二介电层(7)的厚度为2-10nm。
5.权利要求1中所述的光学信息介质(20)，其特征在于40＜x＜60。
6.权利要求1-5任何一项中所述的光学信息介质(20)，其特征在于记录层(6)的化合物附加地包含数量最高达5at.％的O。
7.权利要求1-5任何一项中所述的光学信息介质(20)，其特征在于记录层(6)的化合物附加地包含数量最高达5at.％的N。
8.权利要求1中所述的光学信息介质(20)，其特征在于反射层(3)包含选自金属Al、Ti、Au、Ag、Cu、Rh、Pt、Pd、Ni、Co、Mn、Cr、Mo、W、Hf和Ta中的至少一种，包括这些元素的合金。
9.一种光学记录的方法，包括以下步骤：
提供一种光学信息介质(20)；和
借助于具有激光波长的激光束(10)执行记录；
所述介质(20)具有基板(1)和在所述基板上面提供的层的层叠(2)，层叠(2)包括第一介电层(5)和第二介电层(7)，位于第一介电层(5)和第二介电层(7)之间的能够在非晶态和晶态之间改变的记录层(6)，及反射层(3)，该反射层与记录层分别位于所述第一介电层和第二介电层之一的不同侧，
其特征在于：
记录层(6)包含通式为GexTe100-x的化合物，其中x是Ge的原子百分比，且30＜x＜70，
第一介电层(5)包含选自Ta和Si的氧化物、Si和Al的氮化物及Si的碳化物的化合物，而且其与记录层(6)接触，并且所述第一介电层(5)和第二介电层(7)的最大厚度为15纳米，
其中所述激光束与所述介质之间的相对速度至少为7.2m/s。
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