CN1107600A - 光信息载体 - Google Patents

光信息载体 Download PDF

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CN1107600A
CN1107600A CN94101557A CN94101557A CN1107600A CN 1107600 A CN1107600 A CN 1107600A CN 94101557 A CN94101557 A CN 94101557A CN 94101557 A CN94101557 A CN 94101557A CN 1107600 A CN1107600 A CN 1107600A
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information carrier
layer
optical information
auxiliary layer
deck
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C·M·J·范维扬
A·P·J·M·扬根奈里斯
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Koninklijke Philips NV
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Philips Electronics NV
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Abstract

一种光信息载体,它包括一块基板(1)、一层以介 电层(2与4)为界限的辅助层(3)、一层薄反射层(5)、 一层介电层(7)、一层相变层(9)、一层介电层(11)、一 层紧密金属反射层(13)以及一层保护层(13)。该信息 载体是可由一束激光束a记录与擦除的,并且可以在 一台常规的CD播放机中播放。辅助层(3)包括硒或 AlGaAs。所述辅助层具有在70℃以上的温度时显 著地增加吸收的性质。从而,包括所述辅助层的信息 载体可用比不包括所述辅助层(3)的信息载体低的激 光功率记录。

Description

本发明涉及一种用激光束记录、读与擦除信息的光信息载体,所述光信息载体包括一块具有一个伺服道及许多层的透明基板,该许多层中包括至少一种相变材料的一个记录层及至少一层金属的反射层。
已知的光信息载体如紧致盘(CD)、紧致盘只读存储器(CD-ROM)及激光视盘(LV)是由制造商提供信息的,并且用户只能用市场上可购得的播放设备读取。其它信息载体可由用户记录一次(CD-R)。一种用户可记录与擦除并且在一台标准的CD播放机中可读的信息载体可用在许多应用中。一种专用的记录/擦除设备用于记录与擦除,用户本人可以在信息载体上记录声音或数据信息。经过擦除步骤之后,在信息载体上可记录新的信息。
在一台标准的CD播放机中读取一块可记录与可擦除信息载体的先决条件是所述信息载体与所述CD播放机必须是相容的,即它必须符合CD系统的工业标准,此后称作CD工业标准。这表示除了其它要求之外,信息载体的非记录区的反射RH及调制必须具有一个特定的最小值。当用一束聚焦的激光束读取记录过的信息载体时,反射差和/或光径长度差产生一束调制的激光束,该激光束随即由一个检测器转换成与编码的、记录的数字信息相适应的一个调制的光电流。该调制的光电流为一最低基频为196KHz(千赫)和HF(高频)信息。令光电流的峰间值为I11,与196KHz相关联的HF信号的最高电平为Itop。调制定义为I11/Itop,并且根据上述CD工业标准至少应为0.6。调制的光电流是由信息载体的记录与非记录区之间的反射差与/或光径长度差引起的。为了达到所要求的0.6的调制,只基于反射差的调制的信息载体必须具有最小的光反差。光反差C定义为:
C=100(RH-RL)/RH
在这一等式中,RH具有上述含义,而RL则为信息载体的记录区(位)的反射。实际上,由于激光斑的大小,调制是低于光反差的。这表明,为了满足0.6的调制要求,光反差C必须高于60%。非记录区的反射要求RH是基于780nm±10nm的激光波长的。对于上述波长的一束垂直入射的平行激光束还测定了基板表面的反射(约4%),RH至少须为70%。诸如CD播放机中所用的聚焦激光束的情况中,65%的最小反射值RH便足够了,即,这样一种信息载体可在一台标准的CD播放机中播放并且是与之兼容的。
一种已知类型的光信息载体具有一层称作相变材料的记录层。通过用一束聚焦的激光束局部加热所述记录层并随即冷却之,便改变了在激光斑位置上的这些材料的结晶状态而形成了一个可读取的位。取决于记录层的材料,非晶材料改变成结晶材料或结晶材料改变成非晶材料。也可能从一种晶相改变成另一种晶相。例如,记录层为晶体并具有吸收入射激光束的性质。在记录信息中,转动信息载体并将其暴露在根据要记录的信息调制的一束聚焦的激光束中。借助其自身的性能,在记录层的曝光区中便形成了非晶态的信息位,而在非曝光区中则仍保持为晶体。晶体材料具有与非晶材料不同的光学性质,从而可用一束低功率的聚焦激光束作为一种光反差在反射中读出所记录的信息。在某些相变材料中,可以通过加热将非晶态区变回晶态区,反之亦然,从而擦除所记录的信息。接着便可在记录层中再次记录新的信息。
已经发现很难制造符合所谓CD工业标准要求的可记录信息载体。已知的相变材料的反射与反差都太低,因此,如果不经过进一步的处理,所述这些材料是不适用于与CD播放机兼容的信息载体中的。
在第一段中所提到的那种信息载体是从欧洲专利申请EP-A-352105中得知的。已知的相变型信息载体包含一块设有一条螺旋形伺服道的基板,它带有许多层,其中包括一种InSb(铟锑)或TeGe(碲锗)合金的一层记录层、一层诸如硫化锌(ZnS)的介电层以及一层诸如金(Au)的反射层。在已知的信息载体的一个较佳实施例中,非记录区与记录区的反射分别为72%与38%。从而,该已知信息载体的光反差C为(72-38)/72=47%。所测得的光反差并因此而得到的调制是如上所述低于光反差的,从而并不符合所述CD工业标准(调制>0.6)。
在本发明申请人所提交的未公布的欧洲专利申请92203773.4(PHN13,925)中,给出了提高这种信息载体的反差而仍保持高初始反射的一种方式,使得所述信息载体能符合CD工业标准。为达此目的,提出了在这些层中设置一层面向基板的光非紧密的反射层。最好,这些层具有一种MIPIM分层结构,其中M为一层金属层,I为一层介电层而P则为一层相变记录层。从基板方向上观察,所述信息载体包括诸如一层金的薄反射层、一层Ta2O5(五氧化二钽)介电层、一层(一次性写入)GeTe记录层、一层Ta2O5介电层及一层光紧密金层。由于干涉效应,信息载体的初始反射与反差都得以提高。对于所述分层结构,非记录区与记录区的反射分别为70%与12%。从而,光反差C为82%并因而符合CD工业标准。
然而,符合CD标准的记录信息载体的一个问题是由于非记录区的反射必须至少为65%这一事实而非记录区中的激光束吸收最高能达到35%。结果,信息载体的写灵敏度是如此之小而在写过程中要求异乎寻常地大的激光功率。
除了别的目的以外,本发明的一个目为提供一种称作CD-E(可擦除)的可记录与可擦除的光信息载体,它不但符合CD工业标准并且还具有增强的写灵敏度,即,它能用较小的激光功率记录。
按照本发明,这一目的是用本文第一段中所述的一种光信息载体达到的,其特征在于,其层中还包含至少一个其光吸收具有可逆的、依赖于温度的特征的辅助层,从而在70℃以下的温度中该辅助层的光吸收为零或者基本上为零,而在70℃以上的温度中这些层的光吸收提高到35%以上。本发明是基于有关信息载体的反射与调制的CD要求仅适用于-40℃与+70℃之间的温度这一理解,即在CD系统的工作范围中。在+70℃以上的温度中,反射的急剧降低并因此而引起的吸收的急剧增加是容许的。如果信息载体的整个叠层是在+70℃以上强烈地依赖于温度的,这一效果便可达到。如果这些层中的一层或多层在+70℃以上的温度中经受相变,则除了其它变化以外,载体的反射便可实现随温度的增加而显著地降低。相变的实例为从有序状态到无序状态的转变,如熔化,或者从晶体到非晶体的转变以及从液晶相到各向同性相的转变。从晶态到晶态的转变也是可能的。所述转变也可发生在相反的方向上。按照本发明,此后称作辅助层的呈现相变的层位于入射在其上的激光束最多的位置上,最好在那些层与基板之间。当温度降到70℃以下时,必须恢复原来的光学状态。必须有可能频繁地在诸如固相与液相之间转换。以这一方式所能达到的写灵敏度的提高取决于要达到的吸收增加。35%的吸收需要诸如30mW(毫瓦)的激光的写功率。然后达到70%的吸收增加需要15mW。为了满足CD工业标准的反射与调制要求,在室温下(即在70℃以下的温度中)辅助层的吸收必须为零或基本上为零。
在根据本发明的信息载体的一个实施例中,辅助层中包括硒(Se)。硒的光学性质是受温度控制的。在室温及高达70℃的温度中,在所使用的激光波长上硒基本上是无吸收性的。在硒的熔点(217℃)以上,辅助层具有足够的吸收性。如果采用一层硒辅助层,在硒的熔点以上信息载体的反射急剧降低。在用激光束记录或擦除时,信息载体的温度上升至诸如600℃而硒辅助层熔化。这便引起吸收的显著增加,从而写过程得以用较低的激光功率实现。冷却后,硒辅助层固化而其吸收再度变成基本上为零。被擦除的信息载体的反射并从而非记录区的反射再度升高到65%以上,从而满足CD工业的要求。
在根据本发明的信息载体的一个实施例中,辅助层中包括硒并加有1-6原子百分数的碲。所述添加物使辅助层的吸收系数k在熔化状态中进一步提高。在固相中,包含3个原子百分数的碲的硒层的吸收系数k是小的(0.038)而在熔化状态中则升高至0.14。适当地选择辅助层的厚度能够使辅助层及其它层提高吸收,从室温下的35%到热态(约250℃)中的55%,如在记录或擦除中所出现的。通过其本身的特征,记录或擦除所需的激光功率可减少大约25%。
在根据本发明的光信息载体的另一个实施例中,辅助层包括AlxGa1-xAs,其中X=0.01-0.4(通常称作AlGaAs)。这种材料与其它半导体材料的一种性质为光谱吸收频带随温度移动。AlGaAs的吸收频带每100℃移动约40nm。此外,通过用Al(铝)的适当浓度来掺和GaAs对所要求的激光波长将室温下的AlGaAs的吸收调节到基本上等于零。以这一方式,在所要求的波长上可以在温度升高200℃时得到从0.0006到0.06的吸收系数k的改变。这种材料的优点是其室温下的吸收低于只含少量百分比的碲的硒的吸收。这在光反差上并因此而在调制上具有一种有利的效应。通过选择适当的AlGaAs层的厚度可以得到70℃以上温度上的吸收的提高。对于厚度为190nm的AlGaAs辅助层,辅助层与记录层的综合吸收可在温度升高200℃时从30%提高到48%。
在根据本发明的信息载体的一个较佳实施例中,辅助层是以一层或多层介电层为界限的。由于介电层的存在,防止了辅助层直接接触基板与/或金属反射层,从而排除了可能出现的不利的散射效应。此外,这些介电层可具有使它们作为干涉层增加反射的厚度。
记录层包括一种相变材料,呈现诸如晶态-非晶态的转变。在记录中,在本来是晶态的记录层上形成非晶态的信息位。采用的相变材料是可逆的,从而可以擦除所记录的信息并在擦除后该材料可以再次记录。已知的这类材料有In-Se、In-Se-Sb、In-Sb-Te、Te-Ge、Te-Se-Sb、Te-Ge-Sb及Te-Ge-Se-Sb的合金。如果在根据本发明的一种信息载体中采用了这种材料的一层记录层,便可得到一种CD兼容的可记录与可擦除的信息载体(CD-E)。
根据本发明的信息载体的最简单的实施例具有下述结构:SPHM,其中S表示基板,P表示记录层,H表示辅助层,可以是也可以不是以一层或多层介电层为界限的,而M则表示金属反射层。在另一个实施例中,在记录层与金属反射层之间存在一层介电层I,而得到下述结构:SHPIM。介电层的厚度可以是这样的,使得所述该层能够起到干涉层的作用来提高光反差。辅助层H也可位于这些层中的任何位置上。
在信息载体的一个较佳实施例中,一层第二反射层M′及一层第二介电层位于基板与记录层之间,所述第二介电层是邻接于记录层的。该信息载体具有下述结构:SHM′ IPIM。辅助层H,不论是否以介电层为界限,也可位于这些层中的任何位置上。一种变型是诸如SM′HPIM,其中H层是以两层介电层为界的。如上述本发明的申请人所提交的未公布的欧洲专利申请92203773.4(PHN 13.925)中所描述的,这导致信息载体的较高反射和/或较高光反差。位于基板侧的反射层M′可包含元素金、铝、铜及银中的一种金属或金属合金。所述反射层M′是光非紧密的并且有超过诸如0.2的透光系数。反射层M′也可以是由许多交替地具有高与低折射率的介电层构成的一个介电反射面,例如分别由Ta2O5与SiO2介电层构成的介电反射面。辅助层H可形成介电反射面M′的层叠的一部分。
信息载体外侧上的反射层M最好是诸如元素金、铝、铜或银中的一种金属或金属合金的一层光紧密的金属层,使该反射层透过尽可能少的激光,并从而使尽可能多的激光用于读,并且使信息载体的反射尽可能地高。通过增加额外的介电层作为干涉层,可以提高反射与反差两者。一种可能的结构为诸如SIM′IPIM,这些层中也包括辅助层H。同时在这一结构中,辅助层H可形成介电反射面M′的层叠的一部分。
从上文中可以推论出,信息载体的设计师在如何优化光学性质方面进行了充分的考虑。然而,必须牢记P与金属反射面M(相应地M′)以及M与M′不是互相直接邻接。
至于介电质,可采用诸如SiO2、TiO2、Si3N4、ZnS、AlN或Ta2O5等常用材料。也可使用诸如ZnS与SiO2的混合物等所述材料的混合物。
信息载体的基板至少应对所采用的780nm±10nm激光波长是透明的,并且包括诸如聚碳酸酯、聚甲基丙烯酸甲酯(PMMA)或玻璃。基板也必须是对用于记录与擦除的激光波长透明的。按照CD工业标准,基板的厚度为1.2mm而直径则为120mm。
在记录层一侧的基板表面上设置有光学可扫描的伺服道。这一伺服道通常是一条螺旋形沟纹,并且是在注模或模压时用模具设置在基板上的。在复制过程中,这一沟纹也可设置在一层单独的合成树脂层上,例如提供在基板上的一层丙烯酸酯的紫外线固化层上。这一沟纹具有1.6μm(微米)的纹槽间距及诸如0.6μm的宽度。
必要时,可用诸如一层紫外线固化的聚(甲基)丙酸脂的保护涂层将层叠的最外层与外部环境隔离。
本发明将用示例性实施例及附图更详细地加以说明,其中
图1用图形示出根据本发明的一种光信息载体的剖面,以及
图2示出用作根据本发明辅助层的AlGaAs的吸收系数k(以任意的单位)在温度T1与T2(T2>T1)上作为波长λ的一个函数。
示例性实施例1
图1用图形示出根据本发明的一种光信息载体的剖面的一部分。参照数字1表示直径为120mm,厚度为1.2mm的一块聚碳酸酯盘形基板。基板的一面上设置有沟纹形式的一条螺旋形伺服道(未示出)。这一伺服道是用适当的模具在注模过程中成形在聚碳酸酯中的。在形成伺服道的一面上,基板上设置有一层硒与3个原子百分数的碲的合金的厚度为112nm的辅助层3。辅助层3的顶面与底面上设置有厚度为5nm的Ta2O5介电层2与4。介电层4上设置有下述结构的层叠:
13nm的金:反射层5
19nm的Ta2O5:介电层7
20nm的Te52Ge39Sb9:记录层9
45nm的Ta3O5:介电层11,以及
100nm的金(Au):反射层13。
所述各层可用喷涂或汽相淀积设置。喷涂过程以后,记录层9是非晶态的并由温度处理转变成一层晶态层。反射层13上用旋转涂覆设置一种紫外线固化的丙烯酸酯漆膜的10μm厚的保护层15。
记录层9的材料为一种可逆的,晶态-非晶态,相变材料。
一束用于记录、读取及必要时擦除信息的激光束经由基板1的进入面17进入信息载体。这一光束是示意性地用箭头a表示的。在记录时,信息载体以均匀的线速度旋转并通过一束调制的激光束的作用在晶态的记录层9中得到非晶态的位。上述分层结构在室温下分别在晶态与非晶态中得到65%与20%的反射。反射与调制是符合CD要求的。从而上述信息载体符合CD工业标准并且可以在一台标准的CD播放机上播放。此外,由于采用了辅助层3,它在写过程中熔化,层叠的吸收从室温下的35%提高到70%以上温度中的55%,因而写所需的激光功率降低了约25%。在写入信息载体以后,这些位可以在反射差的基础上在一台传统的CD播放机中读取。在低激光功率的读过程中所产生的温度上,辅助层基本上是透明的。信息是可以擦除的,使非晶态的位变成晶态的。随后,信息载体可以再记录。
示例性实施例2
重复示例性实施例1,辅助层3包含一层厚度为315nm的AlxGa1-xAs层,其中X=13原子百分数。该辅助层是以厚度为5nm的Ta2O5介电层2与4为界的。介电层4上设置有下述结构的层叠:
13nm的金:反射层5
10nm的Ta2O5:介电层7
22nm的Te52Ge39Sb9:记录层9
44nm的Ta2O5:介电层11,以及
100nm的金:反射层13。
图2示意性地示出这种半导体材料的吸收带。在该图中,吸收系数k(以任意单位)相对于波长λ用虚线画出。连续线形式的曲线示出室温T1中的吸收带。在较高的温度上,吸收带移向较长的波长。用虚线表示的曲线示出诸如在220℃(T2)上的吸收带。将AlxGa1-xAs中的X值选定为在用于写过程的激光波长λL上使得吸收系数在这一温度升高上从0.0006(k1)增加到0.06(k2)。
上述分层结构在室温中在晶态与非晶态中分别得到70%与24%反射。反射与调制满足CD要求。从而,上述信息载体符合CD工业标准并且能够在一台标准的CD播放机上播放。在上述辅助层厚度上,层叠的吸收从室温中的30%提高到70%以上温度中的53%。从而用于写入与擦除的激光功率得以相应地降低。吸收带的移位是可逆的,因此在室温中,辅助层的吸收再一次基本上零。这时,信息载体的非记录区重新呈现70%的高反射。根据本发明的信息载体是一种符合CD工业标准(CD-E)的可记录的以及在必要时可擦除的光信息载体,此外,它能在低于不采用辅助层的信息载体的激光功率上记录与擦涂。

Claims (10)

1、一种用激光束记录、读取及擦除信息的光信息载体,所述光信息载体包括具有一条伺服道的一块透明基板及许多层,这些层中包括至少一种相变材料的一层记录层以及至少一层金属的反射层,其特征在于这些层中还包括至少一层具有下述性质的辅助层:光吸收具有可逆的、依赖于温度的特征,从而在70℃以下的温度上辅助层的光吸收为零或基本上为零,而在70℃以上的温度上这些层的光吸收升高至35%以上。
2、根据权利要求1中所述的一种光信息载体,其特征在于该辅助层包含硒。
3、根据权利要求1中所述的一种光信息载体,其特征在于该辅助层包括硒与1-6原子百分数的碲的一种合金。
4、权利要求1中所述的一种光信息载体,其特征在于该辅助层包括AlxGa1-xAs,其中X=0.01-0.4。
5、前面的权利要求中任何一项中所述的一种光信息载体,其特征在于该辅助层是以一层或多层介电层为界限的。
6、前面的权利要求中任何一项中所述的一种光信息载体,其特征在于该记录层包括选自由In-Se、In-Se-Sb、In-Sb-Te、Te-Ge、Te-Se-Sb、Te-Ge-Sb及Te-Ge-Se-Sb所组成的组中的一种合金。
7、前面的权利要求中任何一项中所述的一种光信息载体,其特征在于在反射层与记录层之间存在一层介电层,所述记录层是位于基板一侧的。
8、权利要求7中所述的一种光信息载体,其特征在于一层第二反射层及一层第二介电层是位于基板与记录层之间的,所述第二介电层邻接于记录层。
9、权利要求8中所述的一种光信息载体,其特征在于在基板与第二反射层之间存在一层第三介电层。
10、前面的权利要求中任何一项中所述的一种光信息载体,其特征在于该辅助层存在于基板与层叠之间。
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KR940020332A (ko) 1994-09-16
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CA2115724A1 (en) 1994-08-19
US5442619A (en) 1995-08-15

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