CN1294580C - 可重写的光信息媒体和使用这样的媒体的光记录方法 - Google Patents
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Abstract
给出有关可重写光信息媒体的描述，该媒体具有IPIAIM堆叠(2)，包括：夹在两个介质层(3，5)之间的相变记录层(4)；如Si、Ge、Mo或W材料的光吸收层(6)；第三介质层(7)；和金属镜面层(8)。光吸收层(6)将非晶态与晶态之间的光吸收差值减到最小，因此减小记录标记畸变。在这个位置中出现光吸收层确保非晶态与晶态之间光学相位差几乎为0，使该媒体适合于脊-槽记录。
Description
技术领域
本发明涉及一种光信息媒体，用于通过相对于根据待记录的信息调制的聚焦激光束移动该媒体进行可重写记录，所述媒体包括：带有堆叠层(a stack of layers)的基底，该堆叠包括第一、第二和第三介质层；两个介质层之间配置的相变材料的记录层，该相变材料能够在记录层的暴光区中记录非晶信息比特，该记录层在非暴光区中保持晶态；光吸收层；和金属镜面层(metal mirror layer)。
本发明还涉及使用这样的光记录媒体的光记录方法。
背景技术
基于相变原理的光信息或数据存储是吸引人的，因为它结合了直接重写(DOW)和高存储密度的可能性，与只读系统易兼容。相变光记录牵涉到用聚焦激光束在细微晶体膜中形成亚微米尺寸的非晶记录标记。在记录信息时，媒体相对于聚焦激光束移动，聚焦激光束是根据要记录的信息调制的。因此，淬火(quenching)发生在相变记录层中并引起记录层的曝光区中非晶信息比特的形成，该记录层在非曝光区中保持为晶体。所写非晶标记的擦除通过用同样的激光加热使之发生再结晶来实现。非晶标记代表数据位，其可用低功率聚焦激光束通过基底再现。相对于晶体记录层的非晶标记的反射差值产生了调制激光束，该调制激光束随后被检测器根据被编码、被记录的数字信息转换成调制光电流。
相变光记录的课题之一是在诸如DVD-RAM、可重写DVD和DVR(数字视频记录器)的应用中获得高存储容量，使得这些媒体适于高密度记录，如盘直径为120mm的存储容量将超过3G字节。为了这个目的，可能的选择是减少激光波长和/或增加数值孔径(NA)，因为激光斑点的大小与(λ/NA)2成比例。一个可以选择的方法是多记录层的应用。另一个可能是在媒体的跟踪(引)导(凹)槽(guide groove)之间在槽(groove)中和在脊(land)上记录信息轨迹(脊-槽记录)。这些槽用于沿着轨道引导激光束。
相变光信息媒体的储存密度由标记的径向密度与切向密度共同决定。径向密度由轨道节距即在径向方向上槽的相邻轨道中心线之间的距离决定。热串扰限制轨道节距。这就意味着在轨道中记录的数据质量会受在邻近轨道上记录的影响。被记录标记的形状则可能被畸变，其导致大的抖动(jitter)。切向密度由信道位长度决定，这受这样一个事实限制，即当使用标准IPIM堆叠时，非晶态的光吸收(Aa)比晶态(Ac)的高。该堆叠中，I代表介质层，P代表相变记录层，M代表反射或镜面层。因此，当用激光辐射记录膜时，非晶部分被加热到的温度比晶体部分高。结果，在晶体区域重写的记录标记比非晶区中的小。这种现象引起抖动的增加，其与信道位长度成反比。为了克服这个问题，Ac与Aa的差值应被最小化，或者Ac≥Aa比较好。
在开头段落中提及的光信息媒体从美国专利US-A-5,652,036中公知。已知的相变型媒体有带有堆叠层的基底，堆叠层包括三个介质层、相变记录层、光吸收层和反射层。公开了可能堆叠的许多变化，如IAIPIM堆叠，其中I，P和M有上述的含义，A代表光吸收层。光吸收层由包括介质材料和金属或半导体材料的混合组成。加了光吸收层A的结果是记录层的非晶态(Aa)与晶态(Ac)之间的光吸收差值最小，因此减小了记录标记畸变。已知的记录媒体的一个缺点是不适合高密度脊-槽记录。这是由在公知堆叠的晶态与非晶态之间光学相位差(ψc-ψa)不接近零的事实引起的，其必要性将在后面解释。
发明内容
本发明的目的特别是提供一种可重写的光信息媒体，其适合于高密度脊-槽记录，这意味着ψc-ψa(以rad为单位)应基本上为零。Ac与Aa之间的差应接近零，或优选为Ac/Aa＞0.95，或者更好为Ac≥Aa，同时光对比度保持为高。光对比度C定义为100(Rc-Ra)/Rc，其中Rc与Ra分别为晶态与非晶态的反射率。
这些目的是通过在开头段落中所述的光信息媒体根据本发明实现的，光信息媒体的堆叠有下列层序：
第一介质层，
相变材料的记录层，能够在记录层的暴光区中记录非晶信息比特，该记录层在非暴光区中保持为晶态，
第二介质层，
具有0.5到20范围中的n/k之材料的光吸收层，其中n是折射率，而k是消光系数，
第三介质层，和
金属镜面层。
该堆叠层可称为IPIAIM结构，在这里I，P，I，A和M有上述的意义。具有所述n/k比率之材料的光吸收层的出现确保记录层在晶态(Ac)中吸收的激光量几乎等于或大于在非晶态(Aa)中吸收的激光量。结果，重写在晶体区域中的记录标记与重写在非晶区域中的记录标记大小一样。这个结果会减少抖动，这种记录媒体存储密度会显著提高。
对于脊-槽记录，光吸收层最好配置在相变层与金属镜面层之间并夹在两个介质层之间，因为这种配置会使光学相位差ψc-ψa(以rad为单位)基本为零。其原因是反射激光束的调制不仅由非晶标记和晶体记录层之间的反射差值产生，而且由非晶标记和晶体记录层之间的光学相位差产生。在脊-槽记录中，即在槽中和在槽之间的脊上记录中，槽里和脊上的标记的调制应当相等，即应当仅由反射差值引起。在槽中记录模式或脊上记录模式中，即不是这两种记录模式的组合，光学相位差ψc-ψa无关。
光吸收层材料有n/k比率的范围在0.5到20之间，最好为0.6到16。这些值平衡了光吸收与传输。满足这些条件的材料例子是从Mo、W、Pd、Pt、Co、Ni、Mn、Ta、Cr、Ti和Hf构成的组中选出的金属和从PbS、Ge、InP和Si构成的组中选取的半导体材料。Si与Ge是优选的，因为它们便宜并且易应用。如Au、Cu、Al和Rh的金属不满足这个条件，因为它们的n/k值在该范围之外。
光吸收层的厚度优选在2和200nm之间，最好在10和100nm之间，目的在于在光吸收与传输之间有一个适当的平衡，并且其依赖于被选材料的n/k比率。例如，对于Si，厚度是大约75nm，对于Mo，厚度是大约35nm，而对于Ge，厚度是大约55nm
记录层包括呈现晶相与非晶相转变的相变材料。公知材料是如In-Se、In-Se-Sb、In-Sb-Te、Te-Ge、Te-Se-Sb、Te-Ge-Se或Ag-In-Sb-Te的合金。更好地，记录层包括GeSbTe化合物。特别有用的是由申请人申请的国际专利申请WO 97/50084(PHN 15881)中说明的化合物。这些化合物有由化学式Ge50xSb40-40xTe60-10x以原子百分比定义的组分，其中0.166≤X≤0.444。这些组分在三元Ge-Sb-Te组分图中位于连接化合物GeTe与Sb2Te3的线上，并且包括化学计量化合物Ge2Sb2Te5(x＝0.445)、GeSb2Te4(x＝0.286)和GeSb4Te7(x＝0.166)。这些化合物表现出短的完全擦除时间(CET)。
其它优选化合物在由申请人申请的非提前公开的欧洲专利申请号97203459.9(PHN 16586)中进行了说明。这些化合物具有原子百分比由三元组分图Ge-Sb-Te中的面积确定的成分，所述面积是具有下列顶点的五边形：
Ge14.2Sb25.8Te60.0 (P)
Ge12.7Sb27.3Te60.0 (Q)
Ge13.4Sb29.2Te57.4 (R)
Ge15.1Sb27.8Te57.1 (S)
Ge13.2Sb26.4Te60.4 (T)；
利用这些化合物，能够获得低于50ns的CET值。
其它优选化合物具有的组分为：
(GeSb2Te4)1-xTex
在这里摩尔分数x满足0.01≤x≤0.37。这些组分位于三元组分图中连接GeSb2Te4和Te的结线(tie-line)上，但是在五边形面积PQRST中。借助于这些化合物，可得到CET值低于45ns。
当最多将3.5at.％的氧加到上述化合物GeSbTe时，可获得甚至更低的CET值。
上述化合物GeSbTe的结晶速度或CET值取决于记录层的层厚。当层厚增加高达10nm时，CET值迅速减少。当记录层厚于25nm时，CET与层厚基本无关。在35nm以上，媒体的循环能力受到不利影响。媒体的循环能力是在大量的DOW循环例如105次之后由光学对比度C的相对改变来测量的。每一个循环中，写上的非晶标记由通过激光束加热引起再结晶而擦除，同时写入新的非晶标记。在理想情况下，光学对比度C在循环后保持不变。当记录层的层厚为35nm时，循环能力实际上稳定下来。有关CET及循环能力的综合要求的结果是，记录层的厚度应优选在10nm和35nm之间的范围，最好在25和35nm之间。记录层的厚度在25和35nm之间的媒体在第一105次DOW循环期间有稳定的低抖动。
第一、第二和第三介质层可由ZnS和SiO2例如(ZnS)80(SiO2)20的混合物制成。这些层也可由SiO2、TiO2、ZnS、Si3N4、AlN和Ta2O5组成。最好使用碳化物如SiC、WC、TaC、ZrC或TiC。这些材料有比ZnS-SiO2混合物更高的结晶速度和更好的循环能力。
对于金属镜面层，能够使用如Al、Ti、Au、Ni、Cu、Ag、Rh、Pt、Pd、Ni、Co、Mn和Cr的金属以及这些金属的合金。适合合金的例子是AlTi、AlCr和AlTa。
第一介质层厚度优选在70和[70+λ/(2n1)]nm之间，其中λ是激光束的波长，而n1是第一介质层的折射率。如果厚度小于70nm时，循环能力显著减少。厚度大于70+λ/(2n1)nm不会导致循环能力的进一步增加，不利地影响光学对比度并且使制造更昂贵。如果例如波长是630nm且折射率是1.5，厚度范围将从70nm扩展到280nm。
第二介质层防止在光吸收层与记录层之间的相互作用(通过散射产生合金)。它还调谐晶相与非晶相之间的吸收比率。层厚优选在2和30nm之间，最好在5和15nm之间。小于2nm的厚度引起裂缝(crack)的形成并减少循环能力。大于30nm的厚度减少了记录层的冷却速率。
第三介质层防止在光吸收层与金属镜面层之间的相互作用。它还调节记录层的冷却速率，并因此调节写入敏感性。层厚优选在2和100nm之间，最好在10和15nm之间。当厚度小于2nm时，在记录层与金属镜面层之间的热绝缘性受到不利影响。结果，记录层的冷却速率增加，并因此写功率增加。在厚度大于50nm时，记录层的冷却速率太低。
金属镜面层的厚度优选在60和160nm之间。当金属镜面层薄于60nm时，循环能力受到不利影响，因为冷却速率太低。当金属镜面层为160nm或更厚时，循环能力进一步恶化，并且因为增加的热传导，记录与擦除功率必须高。更优选地，金属镜面层的厚度在80和120nm之间。
反射镜面层、光吸收层以及介质层可利用气相沉积或溅射法来提供。
相变记录层可利用真空沉积、电子束真空沉积、化学气相沉积、离子镀、或溅射法应用到基底上。沉积成的层是非晶的并展现低的反射率。为了构成有高反射率的适合记录层，该层必须首先被完全结晶，这通常被称作为初始化。为了此目的，记录层在炉中被加热到高于GeSbTe化合物的结晶温度的一个温度，如180℃。当使用诸如聚碳酸酯的合成树脂基底时，记录层也可利用具有足够功率的激光束交替加热。这是可以实现的，例如在记录器中，激光束扫描移动的记录层。然后，非晶层被局部地加热到结晶该层所要求的温度，而基底没有经受不利的热载荷。
信息媒体的基底至少是对激光波长透明的，例如由聚碳酸酯、聚甲基丙烯酸甲酯(PMMA)、无定形聚烯烃或玻璃制成。在典型的例子中，基底是盘状的，并且具有直径120mm和厚度0.1、0.6或1.2mm。当使用0.6或1.2mm基底时，这些层能从第一介质层开始，接着为记录层等涂于基底上。激光束通过基底的进入表面进入堆叠。基底上的堆叠层也可按相反的顺序涂成，即从金属镜面层开始。然后，最后的介质层做成厚度为0.1mm的上述基底材料之一的透明层。激光束通过该透明层的进入表面进入堆叠。
为了进行脊-槽记录，记录媒体应该做成圆形或螺旋形的跟踪导槽。这个槽可利用激光束进行光学扫描。在注射成型或压制成型期间，利用模压，槽可在基底上形成。在复制处理中，槽也可在合成树脂中形成，例如在由基底上独立提供的UV光恢复的丙烯酸酯层上形成。在高密度记录中，这种槽有例如0.6-1.2Tm的节距和大约一半节距的宽度。
可选择的是，堆叠的最外层通过如UV恢复的聚(甲基)丙烯酸酯的保护层来屏蔽外界环境。
高密度记录和擦除可通过使用具有例如670nm或更短的短波长激光(红到蓝)来实现。
附图说明
本发明将利用典型例子并参考附图来更详细地说明，其中
该附图表示根据具有IPIAIM结构的堆叠的本发明之光信息媒体的示意剖面图。
具体实施方式
示例实施例1
该图示意地表示根据本发明的光信息盘的一部分剖面。标号1表示具有直径120mm、厚度0.6mm的聚碳酸酯盘状基底。基底1具有以下结构的IPIAIM堆叠2：
厚度81nm的(ZnS)80(SiO2)20的第一介质层3，
厚度20nm的相变化合物GeSb2Te4(原子百分比为Ge14.3Sb28.6Te57.1)的记录层4，
厚度5nm的(ZnS)80(SiO2)20的第二介质层5，
厚度75nm的Si(n/k＝15.2)的光吸收层6，
厚度20nm的(ZnS)80(SiO2)20的第三介质层7，
厚度100nm的Al的金属镜面层8。
堆叠2被UV恢复的聚丙烯酸脂的保护涂层9覆盖。
除了保护层，所有层均由溅射法做成。
记录层4的初始晶态是通过用聚焦激光束在记录器中加热原沉积非晶合金获得的。
基底1在一个侧面上提供有螺旋形跟踪导槽，其是利用UV-光在复制工艺中恢复一层丙烯酸酯提供的。用这种方法形成了槽10和脊11。槽有0.8um的节距，而宽度是节距的一半。
具有670nm波长用于记录、再现，而擦除信息的激光束12通过会聚透镜13和基底1进入堆叠2。非晶标记用功率为pw＝1.25Pm(Pm＝融化阈值功率)和100ns持续时间的一个或多个激光脉冲写入。擦除功率是Pw/2。记录可在槽10进行(槽中记录)，在脊11上进行(脊上记录)，或在槽中和槽之间的脊上进行(脊-槽记录)。
在下面表中概述结果作为例子1。第三列给出上面定义的光学对比度C。这些结果表示：在晶态(Ac)与非晶态(Aa)之间光吸收的差别是很小的。这减少了在DOW期间的温升的差值，由此获得了小的记录标记畸变，导致改善的擦除与抖动特性。当记录媒体用于高密度记录时，这是特别有用的。光学相位差ψc-ψa几乎是0，使得由脊和槽中记录标记引起的调制将是相等的。因此，根据本发明的记录媒体适合于脊-槽记录。
表
| 例子 | A材料 | C(％) | Aa(％) | Ac(％) | Ac/Aa | ψc-ψa(rad) |
| 1 | Si | 89.5 | 76.40 | 74.85 | 0.980 | -0.006 |
| 2 | Ge | 85.6 | 69.50 | 69.85 | 1.005 | -0.003 |
| 3 | Mo | 85.0 | 67.60 | 68.78 | 1.018 | -0.091 |
| 4 | - | 88.6 | 91.28 | 78.02 | 0.855 | -0.228 |
| 5 | Au | 91.8 | 96.28 | 80.19 | 0.833 | -0.052 |
| 6 | Si | 81.4 | 87.54 | 77.57 | 0.886 | -0.636 |
| 7 | Ge | 78.4 | 83.82 | 75.94 | 0.906 | -0.706 |
| 8 | Mo | 81.3 | 76.16 | 68.97 | 0.906 | -0.479 |
| 9 | Au | 88.3 | 89.95 | 76.63 | 0.852 | -0.061 |
示例实施例2
用厚度为55nm的Ge(n/k＝6.5)作为光吸收层6的材料，重复示例实施例1。第一介质层具有的厚度为75nm。结果示于表中作为例子2。Ac与Aa之间的差几乎是0；Ac甚至比Aa大。ψc-ψa几乎是0。
示例实施例3
用厚度为35nm的Mo(n/k＝1.0)作为光吸收层6的材料，重复示例实施例1。第一介质层厚度为220nm。结果示于表中作为例子3。Ac与Aa之间的差几乎是0；Ac甚至比Aa大。ψc-ψa几乎是0。
例子1到3是根据本发明。所有例子显现了好的对比度C。下面的例子4到9不是根据本发明。
示例实施例4(不是根据本发明)
重复示例实施例1，其中光吸收层和第三介质层省略。结果，获得的堆叠为IPIM结构。结果示于表中作为示例4。Aa比Ac大，其给出了在DOW期间温度上升的差别并因此记录标记的畸变，导致不好的擦除与抖动特征。因此，该记录媒体对于高密度记录是不太有用的。光学相位差ψc-ψa相对大，结果由脊与槽中的记录标记引起的调制不相等。因此，该记录媒体不是非常适合于脊-槽记录
示例实施例5(不是根据本发明)
用厚度为35nm的Au(n/k＝0.03)作为光吸收层6的材料，重复示例实施例1。第一介质层有厚度100nm。结果示于表中作为例子5。Aa比Ac大，这给出了在DOW期间温度上升的差别，并因此记录标记的畸变，导致不好的擦除与抖动特征。因此，该记录媒体对于高密度记录不是太有用的。
示例实施例6-9(不是根据本发明)
重复示例实施例1，但光吸收Si层排列在第一介质层与相变层之间。所得到的堆叠具有结构IAIPIM。光吸收层的厚度是5nm。第一、第二和第三介质层分别有厚度100nm、5nm和25nm。第一介质层有厚度100nm。结果示于表中作为例子6。
用厚度为3nm的Ge作为光吸收层的材料，重复示例实施例6。第一介质层有厚度99nm。结果示于表中作为例子7。
用厚度为2nm的Mo作为光吸收层的材料，重复示例实施例6。第一介质层的厚度为84nm。结果示于表中作为例子8。
用厚度为5nm的Au作为光吸收层的材料，重复示例实施例6。第一介质层具有厚度70nm。结果示于表中作为例子9
例子6-9都具有IAIPIM结构堆叠，具有大于Ac的Aa值。这个效果给出了在DOW期间温度上升的差值和因此给出了记录标记的畸变，导致不好的擦除与抖动特征。因此，此记录媒体不太用于高密度记录。
而且，例子6-8都显现出相对大的光学相位差ψc-ψa，使得由脊和槽中记录标记引起的调制不相等。因此，这些记录媒体不是非常适合于脊-槽记录。
根据本发明，提供了具有IPIAIM堆叠的可重写相变光信息媒体，例如用于DVD-RAM、可重写DVD或DVR，其适合于DOW和高密度记录，并且甚至适于脊-槽记录。
Claims (10)
1、一种光信息媒体，用于通过相对于聚焦激光束移动该媒体来进行可重写记录，其中根据将被记录的信息调制该聚焦激光束，所述媒体包括带有堆叠层的基底，该堆叠层按此顺序包括：
第一介质层，
相变材料的记录层，该记录层能够在记录层的暴光区中记录非晶信息比特，该记录层在非暴光区中保持为晶态，
第二介质层，
具有在0.5-20范围中的n/k之材料的光吸收层，其中n是折射率，而k是消光系数，
第三介质层，和
金属镜面层。
2、根据权利要求1的光信息媒体，特征在于：光吸收层包括从由Mo、W、Pd、Pt、Co、Ni、Mn、Ta、Cr、Ti和Hf构成的组中选择的金属或从由PbS、Ge、InP和Si构成的组中选择的半导体材料。
3、根据权利要求1的光信息媒体，特征在于：光吸收层具有在2和200nm之间的厚度。
4、根据权利要求1的光信息媒体，特征在于：记录层包括GeSbTe化合物。
5、根据权利要求1的光信息媒体，特征在于：记录层具有从10到35nm的厚度。
6、根据权利要求1的光信息媒体，特征在于：第一介质层的厚度在70和[70+λ/(2n1)]nm之间，其中λ是激光束的波长，而n1是第一介质层的折射率。
7、根据权利要求1的光信息媒体，特征在于：第二介质层的厚度在2和30nm之间。
8、根据权利要求1的光信息媒体，特征在于：第三介质层的厚度在2和100nm之间。
9、根据权利要求1的光信息媒体，特征在于：金属镜面层的厚度在60和160nm之间。
10、根据权利要求5的光信息媒体，特征在于，记录层具有从25到35nm的厚度。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98202036.4 | 1998-06-18 | ||
| EP98202036 | 1998-06-18 |
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| CN1630902A CN1630902A (zh) | 2005-06-22 |
| CN1294580C true CN1294580C (zh) | 2007-01-10 |
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| Country | Link |
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| US (1) | US6159573A (zh) |
| EP (1) | EP1038294A2 (zh) |
| JP (1) | JP4018340B2 (zh) |
| KR (1) | KR100614505B1 (zh) |
| CN (1) | CN1294580C (zh) |
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| EP1131819A1 (en) * | 1999-08-18 | 2001-09-12 | Koninklijke Philips Electronics N.V. | Rewritable optical information recording medium |
| US6806030B2 (en) * | 2000-03-30 | 2004-10-19 | Hitachi, Ltd. | Information recording medium and method for manufacturing information recording medium |
| CN1194348C (zh) * | 2000-11-30 | 2005-03-23 | 日本胜利株式会社 | 光记录媒体 |
| TW554341B (en) * | 2000-12-15 | 2003-09-21 | Koninkl Philips Electronics Nv | Optical information medium and its use |
| CN1290106C (zh) * | 2002-03-07 | 2006-12-13 | 株式会社理光 | 光记录媒体及其制造方法 |
| US7074471B2 (en) * | 2003-03-27 | 2006-07-11 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method for producing the medium, and method and apparatus for recording information using the medium |
| FR2858100B1 (fr) * | 2003-07-21 | 2005-10-21 | Commissariat Energie Atomique | Support d'enregistrement optique comportant au moins une couche photosensible et une couche deformable |
| EP1522996B1 (en) * | 2003-10-08 | 2011-03-30 | Panasonic Corporation | Method of recording identification information, equipment therefor and information recording medium |
| US20080286446A1 (en) * | 2005-01-28 | 2008-11-20 | Smuruthi Kamepalli | Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials |
| US20060172067A1 (en) * | 2005-01-28 | 2006-08-03 | Energy Conversion Devices, Inc | Chemical vapor deposition of chalcogenide materials |
| WO2014072833A2 (en) * | 2012-11-09 | 2014-05-15 | Nanoco Technologies, Ltd. | Molybdenum substrates for cigs photovoltaic devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0636342A (ja) * | 1992-07-21 | 1994-02-10 | Hitachi Ltd | 情報記録用媒体 |
| EP0766240A2 (en) * | 1995-09-27 | 1997-04-02 | Nec Corporation | Phase change optical disk |
| US5652036A (en) * | 1994-09-21 | 1997-07-29 | Kabushiki Kaisha Toshiba | Information recording medium and method of manufacturing the same |
| WO1997050084A1 (en) * | 1996-06-27 | 1997-12-31 | Philips Electronics N.V. | Reversible optical information medium |
| JPH1091959A (ja) * | 1996-09-12 | 1998-04-10 | Toshiba Corp | 情報記録方法及び情報記録装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2806274B2 (ja) * | 1994-10-19 | 1998-09-30 | 日本電気株式会社 | 光学情報記録媒体 |
| US5876822A (en) * | 1996-06-27 | 1999-03-02 | U.S. Philips Corporation | Reversible optical information medium |
| EP0888616B1 (en) * | 1996-12-24 | 2005-06-29 | Koninklijke Philips Electronics N.V. | Optical recording medium with phase-change recording layer |
| US5935672A (en) * | 1997-03-17 | 1999-08-10 | U.S. Philips Corporation | Reversible optical information medium |
| JPH10289479A (ja) * | 1997-04-10 | 1998-10-27 | Tdk Corp | 光記録媒体 |
| EP0960419B1 (en) * | 1997-12-11 | 2007-02-07 | Koninklijke Philips Electronics N.V. | Rewritable optical information medium |
-
1999
- 1999-05-20 JP JP2000555251A patent/JP4018340B2/ja not_active Expired - Fee Related
- 1999-05-20 CN CNB998013587A patent/CN1294580C/zh not_active Expired - Fee Related
- 1999-05-20 EP EP99918236A patent/EP1038294A2/en not_active Withdrawn
- 1999-05-20 WO PCT/IB1999/000916 patent/WO1999066505A2/en not_active Application Discontinuation
- 1999-05-20 KR KR1020007001566A patent/KR100614505B1/ko not_active IP Right Cessation
- 1999-06-08 TW TW88109522A patent/TW462042B/zh not_active IP Right Cessation
- 1999-06-14 US US09/332,238 patent/US6159573A/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0636342A (ja) * | 1992-07-21 | 1994-02-10 | Hitachi Ltd | 情報記録用媒体 |
| US5652036A (en) * | 1994-09-21 | 1997-07-29 | Kabushiki Kaisha Toshiba | Information recording medium and method of manufacturing the same |
| EP0766240A2 (en) * | 1995-09-27 | 1997-04-02 | Nec Corporation | Phase change optical disk |
| WO1997050084A1 (en) * | 1996-06-27 | 1997-12-31 | Philips Electronics N.V. | Reversible optical information medium |
| JPH1091959A (ja) * | 1996-09-12 | 1998-04-10 | Toshiba Corp | 情報記録方法及び情報記録装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100614505B1 (ko) | 2006-08-22 |
| US6159573A (en) | 2000-12-12 |
| CN1630902A (zh) | 2005-06-22 |
| TW462042B (en) | 2001-11-01 |
| WO1999066505A3 (en) | 2000-03-09 |
| JP4018340B2 (ja) | 2007-12-05 |
| WO1999066505A2 (en) | 1999-12-23 |
| JP2002518782A (ja) | 2002-06-25 |
| EP1038294A2 (en) | 2000-09-27 |
| KR20010022958A (ko) | 2001-03-26 |
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