CN1630902A - 可重写的光信息媒体 - Google Patents
可重写的光信息媒体 Download PDFInfo
- Publication number
- CN1630902A CN1630902A CNA998013587A CN99801358A CN1630902A CN 1630902 A CN1630902 A CN 1630902A CN A998013587 A CNA998013587 A CN A998013587A CN 99801358 A CN99801358 A CN 99801358A CN 1630902 A CN1630902 A CN 1630902A
- Authority
- CN
- China
- Prior art keywords
- layer
- optical
- thickness
- medium
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000002344 surface layer Substances 0.000 claims description 12
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 5
- 239000012782 phase change material Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 230000001172 regenerating effect Effects 0.000 claims 1
- 230000031700 light absorption Effects 0.000 abstract description 8
- 230000004087 circulation Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 229910005872 GeSb Inorganic materials 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 210000004276 hyalin Anatomy 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910017141 AlTa Inorganic materials 0.000 description 1
- 229910017150 AlTi Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 can use as Al Ti Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/24018—Laminated discs
- G11B7/24027—Layers; Shape, structure or physical properties thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/007—Arrangement of the information on the record carrier, e.g. form of tracks, actual track shape, e.g. wobbled, or cross-section, e.g. v-shaped; Sequential information structures, e.g. sectoring or header formats within a track
- G11B7/00718—Groove and land recording, i.e. user data recorded both in the grooves and on the lands
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/20—Disc-shaped record carriers
- G11B2220/21—Disc-shaped record carriers characterised in that the disc is of read-only, rewritable, or recordable type
- G11B2220/215—Recordable discs
- G11B2220/216—Rewritable discs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/20—Disc-shaped record carriers
- G11B2220/25—Disc-shaped record carriers characterised in that the disc is based on a specific recording technology
- G11B2220/2537—Optical discs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/913—Material designed to be responsive to temperature, light, moisture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
可重写光学信息媒体有IPIAIM结构的堆叠(2)，包括夹在两个介质层(3，5)之间的相变记录层(4)，如Si，Ge，Mo，或W材料的光吸收层(6)，第三介质层(7)和金属镜面层(8)。光吸收层(6)可将晶态与非晶态之间的光吸收差值减到最小，因此减小记录标记的畸变。在该位置出现光吸收层可确保晶态与非晶态之间光学相位差几乎为0，使媒体适合台面－凹槽记录。
Description
本发明涉及一种利用激光束可重写的光信息媒体，所述媒体包括带有堆叠层的基底，该堆叠包括第一、第二和第三介质层，两个介质层之间配置的相变材料记录层，该相变材料在晶态时可记录非晶标记，光吸收层，和金属镜面层(metal mirror layer)。
本发明还涉及这种用于台面-凹槽(land-groove)记录的光学记录媒体的使用。
基于相变原理的光信息或数据存储是吸引人的，因为它结合了直接重写(DOW)和高存储密度的可能性，与只读系统易兼容。相变光学记录牵涉到用聚焦激光束在细微晶体膜中形成亚微米尺寸的非晶记录标记。在记录信息时，媒体相对于聚焦激光束移动，聚焦激光束是根据要记录的信息调制的。因此淬火(quenching)发生在相变记录层并引起记录层曝光区非晶信息位的形成，非曝光区保持为晶体。所写非晶标记的擦除可通过用同样的激光加热使之发生再结晶实现。非晶标记代表数据位，其可用低能聚焦激光束通过基底再现。相对于晶体记录层的非晶标记的反射差值产生了调制激光束，该调制激光束可被探测器根据被编码被记录的数字信息转换成调制光电流。
相变光记录的课题之一是在诸如DVD-RAM，可重写DVD和DVR(数字视频记录器)的应用中获得高存储容量，使得这些媒体适合高密度记录，如盘直径为120mm的存储容量将超过3G。为了这个目的，可能的选择是减少激光波长，和/或增加数值孔径(NA)，因为激光斑点的大小与(λ/NA)2成正比。一个可以选择的方法是多记录层的应用。另一个可能是在媒体的凹槽中和跟踪引导凹槽之间的台面上记录信息轨道(台面-凹槽记录)。这些凹槽用于沿着轨道引导激光束。
相变光学信息媒体的储存密度由标记的径向密度与切向密度共同决定。径向密度由轨道节距即在径向方向凹槽轨的相邻轨道中心线之间的距离决定。热串扰限制轨道节距。这就意味着在轨道中记录的数据质量会受在邻近轨道上记录的影响。被记录标记的形状可能被畸变，其导致大的抖动(jitter)。切向密度由信道位长度决定，它被这样一个事实限制，即当使用标准IPIM堆叠时，非晶态的光吸收(Aa)比晶态(Ac)的高。该堆叠中，I代表介质层，P代表相变记录层，M代表反射或金属镜面层。因此，当用激光辐射记录膜时，非晶部分加热后的温度比晶体部分高。结果，在晶体区域重写的记录标记比非晶区的小。这种现象引起抖动的增加，其与信道位长度成反比。为了克服这个问题，Ac与Aa的差值应当达到最小化，或者Ac≥Aa比较好。
在上段提及的光学信息媒体从美国专利US-A-5,652,036得知。已知的相变型媒体有带有堆叠层的基底，堆叠层包括三个介质层，一个相变记录层，一个光吸收层和一个反射层。其公开了可能堆叠的许多变化，如IAIPIM堆叠，其中I，P和M有上述的含义，A代表光吸收层。光吸收层由介质材料和金属或半导体材料混合组成。加了光吸收层A的结果是记录层的非晶态(Aa)与晶态(Ac)之间的光吸收差值最小，因此减小了记录标记畸变。已知的记录媒体的一个缺点是不适合高密度台面-凹槽记录。这是由在公知堆叠的晶态与非晶态之间光学相位差(φc-φa)不约为零引起的，其必要性将在后面解释。
本发明的目的特别是提供一种可重写的光学信息媒体，其适合高密度台面-凹槽记录，这意味着φc-φa(弧度)应基本上为零。Ac与Aa之间的差应大约为零，或优选为Ac/Aa＞0.95，或者更好为Ac≥Aa，同时光对比度保持为高。光对比度C定义为100(Rc-Ra)/Rc，其中Rc与Ra分别为晶态与非晶态的反射率。
这些目的是通过在上段所述光学信息媒体根据本发明实现的，光学信息媒体的堆叠有下列层序：
第一介质层，
在晶态时可记录非晶位的相变材料记录层，
第二介质层，
具有n/k比率为0.5到20之材料的光吸收层，在这里n是折射率，k是消光系数，
第三介质层，和
金属镜面层。
该堆叠层可称为IPIAM结构，在这里I，P，I，A和M有上述的意义。具有上述n/k比率之材料的光吸收层的出现确保记录层在晶态(Ac)吸收的激光量几乎等于或大于在非晶态(Aa)吸收的激光量。结果，重写在晶体区域的记录标记与重写在非晶区域的记录标记大小一样。这个结果会减少抖动，这种记录媒体存储密度会显著提高。
对于台面-凹槽记录，光吸收层最好配置在相变层与金属镜面层之间并夹在两个介质层之间，因为这种配置会使光学相位差φc-φa(弧度)基本为零。其原因是反射激光束的调制不仅由非晶标记和晶体记录层之间的反射率差值产生，而且由非晶标记和晶体记录层之间的光学相位差产生。在台面-凹槽记录中，即在凹槽中和在凹槽之间的台面上的记录，凹槽里和台面上的标记的调制应当相等即应当仅由反射率差值引起。凹槽中的记录模式或台面上的记录模式，即不是这两种记录模式的组合，是与光学相位差φc-φa无关的。
光吸收层材料有n/k比率的范围在0.5到20之间，最好为0.6到16。这些值平衡了光吸收与传输。满足这些条件的材料例子是从Mo，W，Pd，Pt，Co，Ni，Mn，Ta，Cr，Ti和Hf选出的金属和从PbS，Ge，InP和Si中选取的半导体材料。Si与Ge是优选的，因为它们便宜并且易应用。如Au，Cu，Al和Rh的金属不满足这些条件，因为它们的n/k值在这些范围外。
光吸收层的厚度优选在2和200nm之间，最好在10和100nm之间，目的在于在光吸收与传输之间有一个适当的平衡，并且其依赖于被选材料的n/k的比率。例如Si的厚度是大约75nm，Mo的厚度是大约35nm，Ge的厚度是大约55nm
记录层包括表现出晶相与非晶相转变的相变材料。公知材料是如In-Se，In-Se-Sb，In-Sb-Te，Te-Ge，Te-Se-Sb，Te-Ge-Se，或Ag-In-Sb-Te的合金。更好的是记录层包括GeSbTe化合物。特别有用的是由申请人申请的国际专利申请WO97/50084(PHN 15881)中说明的化合物。这些化合物有由化学式Ge50xSb40-40xTe60-10x以原子百分比定义的组分，其中，0.166＜X＜0.444。这些组分适合化合物GeTe与Sb2Te3在Ge-Sb-Te三元组分图的线性连接，并且包括化学计量化合物Ge2Sb2Te5(x＝0.445)，GeSb2Te4(x＝0.286)和GeSb4Te7(x＝0.166)。这些化合物表现出短的完全擦除时间(CET)。
其它优选化合物在由申请人申请的非提前公开的欧洲专利申请97203459.9(PHN 16586)中进行了说明。这些化合物具有原子百分比由Ge-Sb-Te三元组分图中的面积确定的成分，所述面积是下列顶点的五边形：
Ge14.2Sb25.8Te60.0 (P)
Ge12.7Sb27.3Te60.0 (Q)
Ge13.4Sb29.2Te57.4 (R)
Ge15.1Sb27.8Te57.1 (S)
Ge13.2Sb26.4Te60.4 (T)；
这些化合物CET的值在50ns以下。
其它化合物的组分为：
(GeSb2Te4)1-xTex
在这里摩尔分数x满足0.01＜x＜0.37。这些组分适合三元组分图中GeSb2Te4和Te结线连接，但是在五边形面积PQRST中。借助这些化合物，可得到CET值低于45ns。
当最多将3.5at.％的氧加到上述化合物GeSbTe时，可获得更低的CET值。
上述化合物GeSbTe的结晶速度或CET值由记录层的层厚决定。当记录层层厚增加到10nm时，CET值迅速减少。当记录层层厚大于25nm时，CET与层厚基本无关。当大于35nm时，媒体的循环能力受到相反的影响。媒体的循环能力是在大量的DOW循环例如105次之后由光学对比度C的相对改变来测量的。每一个循环中，写上的非晶标记由通过激光束加热引起再结晶而擦除，同时写入新的非晶标记。在理想情况下，光学对比度C在循环后不变。当记录层层厚为35nm时，循环能力实际上稳定下来。结果由于CET及循环能力的综合要求，记录层层厚应优选在10nm和35nm之间的范围，最好在25和35nm之间。记录层层厚在25和35nm之间的媒体在第一个105次DOW循环期间有稳定的低抖动。
第一、第二和第三介质层可由ZnS和SiO2例如(ZnS)80(SiO2)20混合物制成。这些层也可由SiO2，TiO2，ZnS，Si3N4，AlN和Ta2O5组成。最好使用碳化物如SiC，WC，TaC，ZrC或TiC。这些材料有比ZnS-SiO2混合物更高的结晶速度和更好的循环能力。
对于金属镜面层，能够使用如Al，Ti，Au，Ni，Cu，Ag，Rh，Pt，Pd，Ni，Co，Mn和Cr的金属，以及这些金属的合金。优选适合合金的例子是AlTi，AlCr和AlTa。
第一介质层厚度优选在70和[70+λ/(2n)]nm之间，在这里，λ是激光束的波长，n是介质层的折射率。如果层厚小于70nm时，循环能力显著减少。层厚大于70+λ/(2n)nm不会导致循环能力进一步增加，相反影响光学对比度并且使制造更昂贵。如果例如波长是630nm且折射率是1.5，层厚范围将从70nm扩展到280nm。
第二个介质层防止在光吸收层与记录层之间的相互作用(合金扩散)。它还调节晶相与非晶相之间的吸收比率。层厚优选在2和30nm之间，最好在5和15nm之间。小于2nm的厚度引起裂缝的形成并减少循环能力。大于30nm的厚度减少了记录层的冷却速率。
第三个介质层防止在光吸收层与金属镜面层之间的相互作用。它还调节记录层的冷却速率，并因此调节写入的敏感性。层厚优选在2和100nm之间，最好在10和15nm之间。当厚度小于2nm时，在记录层与金属镜面层之间的热绝缘性受到破坏。结果，记录层的冷却速率增加，结果写功率增加。在厚度大于50nm时，记录层的冷却速率太低。
金属镜面层层厚优选在60和160nm之间。当金属镜面层层厚小于60nm时，循环能力受到破坏，因为冷却速率太低。当金属镜面层层厚大于或等于160nm时，循环能力受到进一步破坏，因为增加了热导，记录与擦除功率必须高。金属镜面层层厚最好在80和120nm之间。
反射镜面层，光吸收层及介质层可由气相沉积或溅射法提供。
相变记录层可由真空沉积，电子束真空沉积，化学气相沉积，离子镀，或溅射法涂在基底上。沉积成的层是非晶的并展现低的反射率。为了构成有高反射率的适合记录层，该层必须首先完全结晶，它通常被称作为初始化。为了此目的，记录层在炉中被加热到高于GeSbTe化合物的结晶温度，如180℃。当使用诸如聚碳酸酯的合成树脂基底时，记录层也可被足够能量的激光束交替加热。这是可以实现的，例如在记录器中，激光束扫描移动的记录层。然后非晶层被局部地加热到结晶要求的温度，而基底没有经受不利的热载荷。
信息媒体的基底至少是对激光波长透明的，例如为聚碳酸酯，聚甲基丙烯酸甲酯(PMMA)，无定形聚烯烃或玻璃制成。在典型的例子中，基底是盘状，直径120mm，厚度0.1，0.6或1.2mm。当使用0.6或1.2mm基底时，这些层能从第一介质层开始，接着为记录层等涂于基底上。激光束通过基底的进入表面进入堆叠。基底上的堆叠层也可按相反的顺序涂成，即从金属镜面层开始。然后，最后的介质层做成一个厚度为0.1mm的上述基底材料之一的透明层。激光束通过该透明层进入表面进入堆叠。
为了进行台面-凹槽记录，记录媒体应该做成圆形或螺旋形的跟踪引导凹槽。凹槽可被激光束光学扫描。在注射成型或压制成型时，利用模压，凹槽可在基底上形成。在复制工艺中，凹槽也可在合成树脂中形成，例如在由基底上独立提供的UV光恢复丙烯酸酯层上形成。在高密度记录中，这种凹槽有0.6-1.2um的节距和大约一半节距的宽度。
可选择的是，堆叠的最外层通过如UV恢复丙烯酸酯的保护层来屏蔽外界环境。
高密度记录和擦除可通过使用例如670nm或更短的短波长激光(红到蓝)实现。
本发明利用典型例子并参考附图来更详细的说明。
该附图表示根据有IPIAIM结构的堆叠的本发明之光信息媒体的剖面图。
实例1
该图表示根据本发明的光信息盘的一部分剖面。参考数1表示直径120mm，厚度0.6mm的聚碳酸酯盘状基底。由IPIAIM堆叠2构成的基底1有下列结构：
厚度81nm的(ZnS)80(SiO2)20的第一介质层3，
厚度20nm的相变化合物GeSb2Te4(原子百分比为Ge14.3Sb28.6Te57.1)的记录层4，
厚度5nm的(ZnS)80(SiO2)20的第二介质层5，
厚度75nm的Si(n/k＝15.2)的光吸收层6，
厚度20nm的(ZnS)80(SiO2)20的第三介质层7，
厚度100nm的Al的金属镜面层8。
堆叠2被UV恢复聚丙烯酸脂保护涂层9覆盖。
除了保护层，所有层均由溅射法做成。
记录层4的初始晶态是通过用聚焦激光束在记录器中加热原沉积非晶合金获得的。
基底1在一个侧面上提供有螺旋形跟踪引导凹槽，其是利用UV-光在复制工艺中恢复一层丙烯酸酯提供的。用这种方法形成了凹槽10和台面11。凹槽有0.8um的节距，而宽度是节距的一半。
具有670nm波长用于记录，再现，擦除信息的激光束12通过会聚透镜13和基底1进入堆叠2。该非晶标记用功率为Pw＝1.25Pm(Pm＝融化阈值功率)和100ns持续时间的一个或多个激光脉冲写入。擦功率是Pw/2。记录可在凹槽10进行(凹槽内记录)，在台面11上进行(台面上记录)，或在凹槽中和凹槽之间的台面上进行(台面-凹槽记录)。
下面表中的数据作为例子1的总结。第三列是上面定义过的光学对比度C。结果显现出了在晶态(Ac)与非晶态(Aa)之间光吸收的差别是很小的。这减少了在DOW期间的温升的差值，由此获得了小的记录标记畸变，导致改善了擦除与抖动的特性。当记录媒体用于高密度记录时，这是特别有用的。光学相位差φc-φa几乎是0，使得由台面和凹槽中记录标记引起的调制相等。因此，根据本发明的记录媒体适合于台面-凹槽记录。
表
| 例子 | A材料 | C(％) | Aa(％) | Ac(％) | Ac/Aa | φc-φa(弧度) |
| 1 | Si | 89.5 | 76.40 | 74.85 | 0.980 | -0.006 |
| 2 | Ge | 85.6 | 69.50 | 69.85 | 1.005 | -0.003 |
| 3 | Mo | 85.0 | 67.60 | 68.78 | 1.018 | -0.091 |
| 4 | - | 88.6 | 91.28 | 78.02 | 0.855 | -0.228 |
| 5 | Au | 91.8 | 96.28 | 80.19 | 0.833 | -0.052 |
| 6 | Si | 81.4 | 87.54 | 77.57 | 0.886 | -0.636 |
| 7 | Ge | 78.4 | 83.82 | 75.94 | 0.906 | -0.706 |
| 8 | Mo | 81.3 | 76.16 | 68.97 | 0.906 | -0.479 |
| 9 | Au | 88.3 | 89.95 | 76.63 | 0.852 | -0.061 |
实例2
重复实例1，用厚度为55nm的Ge(n/k＝6.5)作为光吸收层6的材料。第一介质层厚度为75nm。结果示于表中例子2。Ac与Aa之间的差几乎是0。Ac甚至比Aa大。φc-φa几乎是0。
实例3
重复实例1，用厚度为35nm的Mo(n/k＝1)作为光吸收层6的材料。第一介质层厚度为220nm。结果示于表中例子3。Ac与Aa之间的差几乎是0。Ac甚至比Aa大。φc-φa几乎是0。
例子1到3是根据本发明。所有例子显现了好的对比度C。下面的例子4到9不是根据本发明。
实例4(不是根据本发明)
重复实例1，其中光吸收层和第三介质层省略。结果，获得的堆叠为IPIM结构。结果示于表中例4。Aa比Ac大，其给出了在DOW期间温度上升的差别并因此记录标记的畸变，导致不好的擦除抖动特征。因此，该记录媒体不适合高密度记录。光学相位差φc-φa相对大，结果由台面与凹槽的记录标记引起的调制不相等。因此，该记录媒体不很适合台面-凹槽记录
实例5(不是根据本发明)
重复实例1，用厚度为35nm的Au(n/k＝0.03)作为光吸收层6的材料。第一介质层有厚度100nm。结果示于表中例子5。Aa比Ac大，其给出了在DOW期间温度上升的差别并因此记录标记的畸变，导致不好的擦除抖动特征。因此，该记录媒体不适合高密度记录。
实例6-9(不是根据本发明)
重复实例1，但光吸收Si层排在第一介质层与相变层之间。该堆叠为结构IAIPIM。光吸收层的厚度是5nm。第一、第二和第三介质层分别有厚度100nm、5nm和25nm。第一介质层有厚度100nm。结果示于表中例子6。
重复实例6，用厚度为3nm的Ge作为光吸收层的材料。第一介质层有厚度99nm。结果示于表中例子7。
重复实例6，用厚度为2nm的Mo作为光吸收层的材料。第一介质层有厚度84nm。结果示于表中例子8。
重复实例6，用厚度为5nm的Au作为光吸收层的材料。第一介质层有厚度70nm。结果示于表中例子9
例子6-9都具有IAIPIM结构堆叠，具有大于Ac的Aa值。这给出了在DOW期间温度上升的差值和因此的记录标记畸变，导致不好的擦除抖动特征。因此，此记录媒体不适合高密度记录。
而且，例子6-8都显现出光学相位差φc-φa相对的大，使得由台面和凹槽中记录标记引起的调制不相等。因此，这些记录媒体不适合台面-凹槽记录。
根据本发明，提供了有IPIAIM堆叠的可重写相变光学信息媒体，例如为DVD-RAM，可重写DVD，或DVR，其适合于DOW和高密度记录，甚至台面-凹槽记录。
Claims (10)
1、一种利用激光束作可重写记录的光学信息媒体，所述媒体包括带有堆叠层的基底，该堆叠按顺序包括：
第一介质层，
在晶态时可记录非晶位的相变材料记录层，
第二介质层，
具有n/k比率为0.5到20之材料的光吸收层，在这里n是折射率，k是消光系数，
第三介质层，和
金属镜面层。
2、根据权利要求1的光学信息媒体，特征在于：光吸收层包括选自由Mo，W，Pd，Pt，Co，Ni，Mn，Ta，Cr，Ti，和Hf构成组的金属或选自由PbS，Ge，InP和Si构成组的半导体材料。
3、根据权利要求1的光学信息媒体，特征在于：光吸收层有2和200nm之间的厚度。
4、根据权利要求1的光学信息媒体，特征在于：记录层包括GeSbTe化合物。
5、根据权利要求1的光学信息媒体，特征在于：记录层有从10到35nm的厚度，优选在25到35nm。
6、根据权利要求1的光学信息媒体，特征在于：第一介质层厚度在70和[70+λ/(2n)]nm之间，在这里，λ是激光束的波长，n是介质层的折射率。
7、根据权利要求1的光学信息媒体，特征在于：第二介质层厚度在2和30nm之间。
8、根据权利要求1的光学信息媒体，特征在于：第三介质层厚度在2和100nm之间。
9、根据权利要求1的光学信息媒体，特征在于：金属镜面层厚度在60和160nm之间。
10、上述台面-凹槽记录的任一权利要求的光学信息媒体的应用。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98202036 | 1998-06-18 | ||
| EP98202036.4 | 1998-06-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1630902A true CN1630902A (zh) | 2005-06-22 |
| CN1294580C CN1294580C (zh) | 2007-01-10 |
Family
ID=8233824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB998013587A Expired - Fee Related CN1294580C (zh) | 1998-06-18 | 1999-05-20 | 可重写的光信息媒体和使用这样的媒体的光记录方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6159573A (zh) |
| EP (1) | EP1038294A2 (zh) |
| JP (1) | JP4018340B2 (zh) |
| KR (1) | KR100614505B1 (zh) |
| CN (1) | CN1294580C (zh) |
| TW (1) | TW462042B (zh) |
| WO (1) | WO1999066505A2 (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001013370A1 (en) * | 1999-08-18 | 2001-02-22 | Koninklijke Philips Electronics N.V. | Rewritable optical information recording medium |
| US6806030B2 (en) * | 2000-03-30 | 2004-10-19 | Hitachi, Ltd. | Information recording medium and method for manufacturing information recording medium |
| CN1194348C (zh) * | 2000-11-30 | 2005-03-23 | 日本胜利株式会社 | 光记录媒体 |
| TW554341B (en) * | 2000-12-15 | 2003-09-21 | Koninkl Philips Electronics Nv | Optical information medium and its use |
| CN1290106C (zh) * | 2002-03-07 | 2006-12-13 | 株式会社理光 | 光记录媒体及其制造方法 |
| US7074471B2 (en) * | 2003-03-27 | 2006-07-11 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method for producing the medium, and method and apparatus for recording information using the medium |
| FR2858100B1 (fr) * | 2003-07-21 | 2005-10-21 | Commissariat Energie Atomique | Support d'enregistrement optique comportant au moins une couche photosensible et une couche deformable |
| ATE504058T1 (de) * | 2003-10-08 | 2011-04-15 | Panasonic Corp | Verfahren zur aufzeichnung von indentifikationsinformationen, vorrichtung dafür und informationsaufzeichnungsmedium |
| US20080286446A1 (en) * | 2005-01-28 | 2008-11-20 | Smuruthi Kamepalli | Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials |
| US20060172067A1 (en) * | 2005-01-28 | 2006-08-03 | Energy Conversion Devices, Inc | Chemical vapor deposition of chalcogenide materials |
| EP2917941A2 (en) * | 2012-11-09 | 2015-09-16 | Nanoco Technologies Ltd | Molybdenum substrates for cigs photovoltaic devices |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0636342A (ja) * | 1992-07-21 | 1994-02-10 | Hitachi Ltd | 情報記録用媒体 |
| JP3516996B2 (ja) * | 1994-09-21 | 2004-04-05 | 株式会社東芝 | 情報記録媒体およびその製造方法 |
| JP2806274B2 (ja) * | 1994-10-19 | 1998-09-30 | 日本電気株式会社 | 光学情報記録媒体 |
| JP2785763B2 (ja) * | 1995-09-27 | 1998-08-13 | 日本電気株式会社 | 相変化光ディスク |
| US5876822A (en) * | 1996-06-27 | 1999-03-02 | U.S. Philips Corporation | Reversible optical information medium |
| JPH11513166A (ja) * | 1996-06-27 | 1999-11-09 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 可逆性光情報媒体 |
| JPH1091959A (ja) * | 1996-09-12 | 1998-04-10 | Toshiba Corp | 情報記録方法及び情報記録装置 |
| JP4571238B2 (ja) * | 1996-12-24 | 2010-10-27 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | フェーズ変化記録層を有する光学記録媒体 |
| US5935672A (en) * | 1997-03-17 | 1999-08-10 | U.S. Philips Corporation | Reversible optical information medium |
| JPH10289479A (ja) * | 1997-04-10 | 1998-10-27 | Tdk Corp | 光記録媒体 |
| DE69837037T2 (de) * | 1997-12-11 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Wiederbeschreibbares optisches informationsmedium |
-
1999
- 1999-05-20 WO PCT/IB1999/000916 patent/WO1999066505A2/en not_active Application Discontinuation
- 1999-05-20 KR KR1020007001566A patent/KR100614505B1/ko not_active IP Right Cessation
- 1999-05-20 JP JP2000555251A patent/JP4018340B2/ja not_active Expired - Fee Related
- 1999-05-20 CN CNB998013587A patent/CN1294580C/zh not_active Expired - Fee Related
- 1999-05-20 EP EP99918236A patent/EP1038294A2/en not_active Withdrawn
- 1999-06-08 TW TW88109522A patent/TW462042B/zh not_active IP Right Cessation
- 1999-06-14 US US09/332,238 patent/US6159573A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW462042B (en) | 2001-11-01 |
| EP1038294A2 (en) | 2000-09-27 |
| CN1294580C (zh) | 2007-01-10 |
| WO1999066505A3 (en) | 2000-03-09 |
| JP2002518782A (ja) | 2002-06-25 |
| KR100614505B1 (ko) | 2006-08-22 |
| KR20010022958A (ko) | 2001-03-26 |
| WO1999066505A2 (en) | 1999-12-23 |
| JP4018340B2 (ja) | 2007-12-05 |
| US6159573A (en) | 2000-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4037057B2 (ja) | 再書込み可能な光学情報媒体 | |
| CN1216376C (zh) | 具有分离记录层的光信息介质 | |
| CN1218310C (zh) | 光记录介质和这种光记录介质的使用 | |
| CN1143288C (zh) | 可改写的光学信息介质 | |
| CN1183611A (zh) | 信息记录媒体和应用该信息记录媒体的信息记录再生装置 | |
| CN1221960C (zh) | 光学信息介质及光学记录方法 | |
| CN1294580C (zh) | 可重写的光信息媒体和使用这样的媒体的光记录方法 | |
| CN1312686C (zh) | 多堆叠光学数据存储介质和这种介质的使用 | |
| CN1188847C (zh) | 相变型光记录介质及其制造方法和记录方法 | |
| EP1345218B1 (en) | Optical information recording medium and manufacturing method and recording/reproducing method for the same | |
| CN1185642C (zh) | 可重写的光信息记录介质 | |
| CN1224969C (zh) | 光学信息记录介质和使用了它的记录方法 | |
| CN1235200C (zh) | 光学信息介质 | |
| CN1253872C (zh) | 多叠式光学数据存储介质 | |
| CN1278324C (zh) | 可重写光学数据存储介质及使用这种介质的方法 | |
| CN1132166C (zh) | 可重写锗－锑－碲合金光信息介质 | |
| CN1199164C (zh) | 包含锗锑碲记录层的光记录介质 | |
| CN1516145A (zh) | 光信息记录介质及光信息记录介质的信息记录再生方法 | |
| CN1669080A (zh) | 多叠层光学数据存储介质及其应用 | |
| CN100533563C (zh) | 可重写光学存储介质和这种介质的使用 | |
| JP2003335064A (ja) | 相変化型光情報記録媒体 | |
| US20030099903A1 (en) | Rewritable optical information recording medium | |
| CN1155348A (zh) | 光信息载体 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |