CN1628347A - 可重写光学存储介质和这种介质的使用 - Google Patents
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Abstract
描述了一种可重写的光学存储介质(10)，其包括基片(1)、第一电介质层(2)、Ge－Sb－Te基础上的相位变化记录层(3)、第二电介质层(4)和金属反射层(5)。记录层(3)是具有以原子％表示的组分GexSbyTez的合金，其中0＜x＜15，50＜y＜80，10＜z＜30并且x+y+z＝100，并且记录层(3)具有从7到18nm的范围中选择的厚度。这样的介质(10)适合于具有大于25Mb/s的数据速率的高数据速率记录，同时记录层(6)保持相对薄，而具有相对高的光学透明度。
Description
技术领域
本发明涉及一种可重写光学存储介质，用于借助经聚焦的激光束来进行可擦除的高数据速率记录，所述介质包括：
基片；以及基片上的层的层叠；所述层叠包括：第一电介质层；包括由Ge、Sb和Te组成的合金的相位变化材料的记录层；第二电介质层；以及金属反射层。
本发明亦涉及在高数据速率应用中的这种光学记录介质的使用。
背景技术
在起始段中提及的类型的光学数据存储介质的实施例从申请人提交的美国专利US 5,935,672中是已知的。
基于相位变化原理的光学数据存储介质是吸引人的，因为它组合了直接覆写(overwrite)(DOW)和高存储密度的可能性以及与只读光学数据存储系统的容易兼容性。在该情况下，数据存储包括数字视频、数字音频和软件数据存储。相位变化光学记录包含使用经聚焦的相对高功率的激光束在结晶记录层中形成亚微米尺寸的无定形记录标记。在记录信息期间，介质相对于经聚焦的激光束而被移动，该激光束依照待记录的信息来调制。当高功率激光束熔化结晶记录层时形成了标记。当激光束被转换成关并且/或者随后相对于记录层而被移动时，被熔化的标记的淬火(quenching)发生在记录层中，从而在记录层的曝光区域中留下无定形信息标记，而在非曝光区域中保持结晶。所写的无定形标记的擦除是通过再结晶来实现的，该再结晶是通过以较低功率水平用相同激光加热来实现的，而无需熔化记录层。无定形标记表示数据位，其可例如通过相对低功率的聚焦激光束经由基片来读取。相对于结晶记录层的无定形标记的反射差异导致经调制的激光束，其随后可依照所记录的信息由检测器转换成经调制的光电流。
相位变化光学记录中最重要的要求之一是高数据速率，这意味着可以以至少25Mbits/s的用户数据速率在介质中写入和重写数据。这样的高数据速率需要记录层在DOW期间具有高结晶速度，即短结晶时间。为确保先前所记录的无定形标记可在DOW期间被再结晶，记录层必须具有适当的结晶速度以匹配相对于激光束的介质的速度。如果结晶速度不是足够高，则表示老数据的来自先前记录的无定形标记不能在DOW期间被完全擦除，即(meaning)再结晶。这导致高噪声水平。该结晶速度尤其被需要于高密度记录和高数据速率光学记录介质中，如在盘形CD-RW高速，DVD-RW，DVD+RW，DVD-RAM，DVD-红和蓝，其分别是以下的缩写：已知光盘(Compact Disk)和新一代高密度数字通用(Digital Versatile)或视频盘(Video Disk)+RW和-RAM，其中RW和RAM指的是这种盘的可重写性；以及数字视频记录(Digital VideoRecording)光学存储盘，其中红和蓝指的是所使用的激光波长。对于这些新盘，完整的擦除时间(CET)必须小于40ns。CET被定义为擦除脉冲的持续时间，该脉冲用于在结晶环境下所写无定形标记的完整结晶。CET是用静电测试器来测量的。对于每个120mm盘具有4.7GB记录密度的DVD+RW，需要26Mbits/s的用户数据位速率，而对于DVR-蓝，所述速率是35Mbits/s。对于DVD+RW和DVR-蓝的高速版本，需要50Mbits/s及以上的数据速率。用于音频/视频(AV)应用的数据速率由AV信息流来确定，但对于计算机数据应用，没有施加数据速率的限制，即越大越好。每个这些数据位速率可被转化成最大CET，其受几个参数的影响，例如所使用的记录层材料和记录层叠的热设计。
相位变化类型的已知介质包括盘形基片，其承载由以下相继组成的层的层叠：第一电介质层，相位变化Ge-Sb-Te合金的记录层，第二电介质层和金属反射层。这样的层的层叠可被称为IPIM结构，其中M表示反射金属层，I表示电介质层而P表示相位变化记录层。所述专利公开了化合物Ge50xSb40-40xTe60-10x，在该配方中，0.166≤x≤0.444。属于所提及的范围内的化学计量Ge-Sb-Te材料，例如Ge2Sb2Te5，被用作用于例如DVD-RAM盘的记录层。这些化学计量组分具有成核支配的结晶过程。它意味着对所写无定形标记的擦除是通过标记中的成核和随后的生长而发生的。依照所述专利，所述Ge-Sb-Te层的CET通过将其厚度增加到高达25nm而减小，然后在大约50-60ns的值处基于层厚度的进一步增加而趋向于变为常数。25和35nm之间的厚度范围已被要求权利以便于在高数据速率记录中使用。当记录层的厚度变得小于25ns时，CET增加至80ns以上的值。
已知的记录介质显示出大约50-60ns的其记录层的最小CET，并且当转向较小的记录层厚度时，CET趋向于增加。对于多记录层应用，理想的是最接近于记录/读取激光束的记录层基于相对高的光学透射以允许在进一步的记录层中写入和记录。记录层的相对高的光学透射可仅当其厚度低于25nm时被实现。然而，在25nm或以下的记录层厚度时，已知介质的CET增加至较不适合于高数据速率记录的值。
发明内容
本发明的目的是提供在起始段中描述的种类的可重写光学存储介质，其具有记录层，该记录层具有低于25nm的厚度和最大40ns的CET，从而使其适合于高数据速率记录。
该目的是依照本发明通过如在起始段中所述的光学存储介质来实现的，其特征在于所述合金具有以原子百分比表示的配方GexSbyTez所限定的组分，其中0＜x＜15，50＜y＜80，10＜z＜30并且x+y+z＝100；并且记录层具有从7到18nm的范围中选择的厚度。这些材料具有生长支配的结晶过程。它意味着标记擦除是通过从所写无定形标记和结晶背景之间的边界进行直接生长而发生的。在该生长结束之前，所写无定形标记内的成核不发生。意外的是，这些材料的CET首先随着层厚度的增加而迅速减小，然后基于层厚度的进一步增加再次增加。当记录层具有从7到18nm的范围中选择的厚度时，CET变得短于40ns。被要求权利的Ge-Sb-Te组分的CET的厚度相关性可被理解如下。随着相位变化记录层厚度的增加，CET的强初始减小是界面材料和散装材料的贡献之间的竞争的结果。当所述层相对薄时，位于界面处的材料的体积分数是大的，其常常在结构上很不同于其散装形式，例如具有较多缺陷。随着层厚度的增加，处于散装形式的材料的分数将增加，并且在某个厚度以上，材料的表现将受散装形式的控制。显然，散装材料具有比界面材料有利的生长速度。
基于相位变化层厚度的进一步增加，CET的增加可由材料的体积增加而导致。被要求权利的Ge-Sb-Te层的结晶过程是生长支配的。待结晶的材料的体积变得重要。微晶的尺寸典型地是10nm。当所述层薄时，需要二维生长，其需要较短的时间。当所述层变厚时，需要三维生长，并且自然需要较长的时间。
在依照本发明的光学存储介质的有利实施例中，记录层具有从8.5到13nm的范围中选择的厚度。在该范围中，CET低于35ns，其使能更高的数据速率。
在依照本发明的光学存储介质的另一个有利实施例中，第二电介质层具有20到40nm的厚度。用于第二电介质层，即用于记录层和金属反射层之间的层的最优厚度被发现处于15和50nm之间，优选地处于20和40nm之间。当该层过薄时，记录层和金属反射层之间的热绝缘被不利地影响。结果，记录层的冷却速率被增加，这导致慢的结晶过程和差的可循环性(cyclabilty)。冷却速率将通过增加第二电介质层的厚度而减小。CET对金属反射层的厚度不敏感。其厚度可例如处于从20到200nm的范围内。但当金属反射层薄于60nm时，可循环性被不利地影响，这是因为冷却速率过慢。当金属反射层是160nm或更厚时，可循环性进一步恶化，并且由于增加的热传导，记录和擦除功率必须是高的。优选地，金属反射层的厚度处于80和120nm之间。
在依照本发明的光学存储介质的又一个有利实施例中，第一电介质层具有70到500nm的厚度。当第一电介质层具有低于70nm的厚度时，介质的可循环性被不利地影响。大于500nm的厚度可导致所述层中的应力并且淀积较贵。
在依照本发明的光学存储介质的专门实施例中，进一步的记录层被提供在具有与(第一)记录层相同组分的层叠中。进一步的记录可被夹在与(第一)记录层的电介质层类似的电介质层之间。进一步的辅助层可被提供。在所谓的多记录层叠介质中，以大于激光束的焦深的距离通过中间层分离两个或多个记录层而提供这些记录层。有时多层叠设计由Ln来表示，其中n表示0或正整数。激光束所进入的第一层叠被称为L0，而每个更深的层叠由L1..Ln来表示。更深应根据进来的激光束的方向来理解。在写入这种介质并从这种介质读取期间，激光束被聚焦到Ln层叠之一的记录层上。例如，在具有L0和L1层叠的双层叠介质的情况下，为了具有足够的写入能量和读取信号，L0层叠必须足够透明。这仅当L0层叠的记录层具有25nm的相对低的厚度或更薄时是可能的。作为最深的层叠，L1层叠可具有较厚的记录层，这是因为它不必是光学透明的。依照本发明，低CET被与低记录层厚度组合，这使得依照本发明的记录层适合于在多记录层叠介质中使用。
第一和第二电介质层可由ZnS和SiO2的混合物制成，例如(ZnS)80(SiO2)20。可替换的是例如SiO2、TiO2、ZnS、AlN和Ta2O5。优选地，电介质层包括碳化物，如SiC、WC、TaC、ZrC或TiC。这些材料给出比ZnS-SiO2混合物高的结晶速度和好的可循环性。
对于金属反射层，诸如Al、Ti、Au、Ni、Cu、Ag、Cr、Mo、W和Ta的金属以及这些金属的合金可被使用。
数据存储介质的基片至少对于激光波长是透明的，并且例如是由聚碳酸酯、聚甲基丙烯酸甲酯(PMMA)、无定形聚烯烃或玻璃制成的。仅当激光束通过基片的入口面而进入记录层叠时需要基片的透明度。在典型的实例中，基片是盘形的，并且具有120mm的直径和0.1、0.6或1.2mm的厚度。当激光束通过与基片侧相对的侧而进入所述层叠时，基片可以是不透明的。在后者的情况下，所述层叠的金属反射层与基片相邻。这亦被称为相反层叠。相反层叠例如被用在DVR盘中。
记录层叠侧上的盘形基片的表面优选地被提供有伺服轨迹，其可被光学地扫描。该伺服轨迹常常由螺旋形沟槽构成，并且在注模或压制期间借助模子而形成于基片中。可替换的是，这些沟槽可在复制过程中被形成于间隔物层的合成树脂中，例如UV光可固化丙烯酸酯(acrylate)中。
任选的是，所述层叠的最外层是借助于例如UV光固化聚(甲基)丙烯酸酯的保护层与环境隔离的。当激光束通过保护层而进入记录层叠时，保护层必须具有好的光学质量，即基本上没有光学象差并且厚度基本上是均匀的。在此情况下，保护层对激光是透明的，并且亦被称为覆盖层。对于DVR盘，该覆盖层具有0.1mm的厚度。
可通过例如具有660nm或更短(红到蓝)波长的短波长激光来实现记录并擦除记录层叠的记录层中的数据。
金属反射层和电介质层两者均可通过蒸发或溅射来提供。
相位变化记录层可通过真空淀积而施加给基片。已知的真空淀积过程是蒸发(电子束蒸发、从坩埚进行的阻热蒸发)、溅射、低压化学蒸汽淀积(CVD)、离子电镀、离子束辅助蒸发、等离子体增强CVD。由于过高的反应温度，正常的热CVD过程是不适用的。由此被淀积的层是无定形的，并且显示出低反射。为了构成具有高反射的适当记录层，该层必须首先被完全结晶，这一般被称为初始化。为此，记录层可在炉内被加热至Ge-Sb-Te合金的结晶温度以上的温度，例如180℃。可替换的是，合成树脂基片，如丙烯酸酯，可由足够功率的专门激光束来加热。这可被实现于例如专门的记录器中，在此情况下，所述专门的激光束扫描移动的记录层。无定形层然后在本地被加热至结晶该层所需的温度，而基片无需经历不利的热负荷。
可通过使用例如具有660nm或更短(红到蓝)波长的短波长激光来实现高密度记录和擦除。
附图说明
将借助示例实施例并参照附图来更详细地说明本发明。
图1示出依照本发明的光学存储介质的示意断面图，
图2示出用于Ge7Sb76.4Te16.6材料的记录层的厚度d3(以nm表示)和CET(以ns表示)直径的关系。
具体实施方式
图1示出了依照本发明用于可擦除高速记录的可重写光学存储介质的横截面的一部分。记录和读取是借助激光束6来进行的。介质10具有基片1，其由具有120mm的直径和0.6mm的厚度的PC制成。层的IPIM层叠被提供于基片上，其包括具有厚度d2＝70nm的(ZnS)80(SiO2)20的第一电介质层2、具有厚度d3的具有组分Ge7Sb76.4Te16.6的相位变化材料的记录层3以及具有厚度d4＝20nm的(ZnS)80(SiO2)20的第二电介质层4和具有厚度d5＝100nm的Al的金属反射层5。具有厚度d3的记录层6在4和30nm之间变化。该变化的效应的结果被示出于图2中。
相位变化记录层3是通过对适当目标的蒸汽淀积或溅射而施加给基片的。由此而淀积的层3是无定形的，并且被初始化即结晶于专门的记录器中，如较早时所述。层2、4和5亦通过溅射来提供。
用于记录、再现和擦除信息的激光束6通过基片1进入记录层3。无定形标记是用功率Pw＝1.25Pm(Pm＝熔化阈值功率)和持续时间100ns的单个激光脉冲来写的。擦除功率是Pw/2。注意，可替换的实施例是可能的，在其中基片1相邻于金属反射层5而被提供，而激光束6仍通过层2而进入记录层3。在此情况下，例如0.1mm的任选的光学透明的覆盖层可相邻于电介质层2而被提供。
在图2中示出了对用于化合物Ge7Sb7 6.4Te16.6的相位变化记录层3的以nm表示的厚度d3的以ns表示的CET的相关性。从图2的曲线11来看，显然通过将d3增加到高达大约10nm，CET迅速减小，并且基于d3的进一步增加，它趋向于缓慢增加并且在大约47ns的低值处饱和。
应指出，上述实施例说明而不是限制了本发明，并且本领域的技术人员将能在所附权利要求的范围内设计许多可替换实施例。在权利要求中，被置于括号之间的参考符号不应被理解成限制权利要求。词“包括”并不排除除了权利要求中所列的那些以外的单元或步骤的存在。单元之前的词“一”或“一个”并不排除多个这种单元的存在。某些措施被列举于相互不同的相关权利要求中的仅有事实并不表示这些措施的组合不能被有利地使用。
依照本发明，一种可擦除光学存储介质被提供，其适合于直接覆写和高数据速率记录，如DVD+RW和可重写DVR，其具有相对薄的相位变化型记录层，该记录层具有至少25Mb/s的可能数据速率。
Claims (7)
1.一种可重写光学存储介质(10)，用于借助经聚焦的激光束(6)来进行可擦除的高数据速率记录，所述介质(10)包括：
基片(1)；以及
基片(1)上的层的层叠；所述层叠包括：
第一电介质层(2)；
包括由Ge、Sb和Te组成的合金的相位变化材料的记录层(3)；
第二电介质层(4)；以及
金属反射层(5)，特征在于
所述合金具有以原子百分比表示的配方GexSbyTez所限定的组分，其中0＜x＜15，50＜y＜80，10＜z＜30并且x+y+z＝100；并且记录层(3)具有从7到18nm的范围中选择的厚度。
2.权利要求1的光学存储介质(10)，特征在于记录层(3)具有从8.5到13nm的范围中选择的厚度。
3.权利要求1或2的任何一个的光学存储介质(10)，特征在于所述合金具有以原子百分比表示的配方GexSbyTez所限定的组分，其中6＜x＜8，70＜y＜80，15＜z＜20并且x+y+z＝100。
4.权利要求1的光学存储介质(10)，特征在于第二电介质层(4)具有20到40nm的厚度。
5.权利要求1的光学存储介质(10)，特征在于第一电介质层(2)具有70到500nm的厚度。
6.权利要求1的光学存储介质(10)，特征在于进一步的记录层被提供于具有与记录层(3)相同组分的层叠中。
7.先前权利要求的任何一个的光学存储介质(10)的用途，用于具有高于25Mb/s的数据速率的高数据速率记录。
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