CN1650360A - 多叠层光学数据存储介质和这种介质的使用 - Google Patents
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Abstract
本发明描述了一种用于在记录过程中使用穿过介质(20)的入射表面(16)的聚焦射束(30)实现可重写的记录的多叠层光学数据存储介质(20)。所述介质(20)具有基底(1)。其一侧沉积有包括相变型记录层(6)的第一记录叠层(2)。所述第一记录叠层(2)位于最远离入射表面(16)的位置上。至少一个另外的记录叠层(3)，包括相变型记录层(12)，相比于第一记录叠层(2)更靠近入射表面(16)。对于射束(30)而言是透明的Cu质金属反射层位于另一记录层(3)上，厚度在2到10nm之间。透明隔离层(9)位于记录叠层(2，3)之间。这样，可以实现具有高光学透射率和足够的散热效果的金属反射层(14)，其对相邻层的化学反应性还很低。
Description
技术领域
本发明涉及一种多叠层光学数据存储介质，用于在记录过程中使用穿过介质的入射表面的聚焦射束实现可重写的记录，包括：
基底，其一侧沉积有：
包括相变型记录层的第一记录叠层，所述第一记录叠层位于最远离入射表面的位置上，
至少一个另外的记录叠层，包括相变型记录层，其相比于第一记录叠层更靠近入射表面，该叠层还包括金属反射层，所述金属反射层对于射束而言是透明的，
位于记录叠层之间的透明隔离层，所述透明隔离层的厚度大于聚焦激光束的聚焦深度。
本发明还涉及这种多叠层光学数据存储介质在高数据率记录应用中的使用。
背景技术
首段中所述类型的光学数据存储介质的一个实施例已经公开于申请人申请的美国专利US6190750中。
基于相变原理的光学数据存储介质是很具有吸引力的，因为它将直接改写(DOW)及高存储密度和与只读光学数据存储系统的易兼容性几种可能结合了起来。此处，数据存储包括数字视频、数字音频和软件数据存储。相变光学记录涉及使用经过聚焦的功率相对较高的辐射束，例如聚焦激光束，从而在晶态记录层中形成亚微米大小的非晶态记录标记。在信息记录期间，介质相对于聚焦激光束移动，聚焦激光束依据所要记录的信息进行调制。当高功率激光束熔化了晶态记录层时，就形成了标记。当切断激光束和/或接着相对于记录层进行移动时，在记录层中进行熔化标记的淬火，在记录层的暴露区域中留下了非晶态信息标记，而在未暴露区域中仍然保持晶态。对已写入非晶态标记的擦除是通过再结晶实现的，这种再结晶是通过使用功率电平较低的同一激光进行加热，而并不熔化记录层而实现的。非晶态标记代表数据位，这种数据位可以由相对较低功率的聚焦激光束例如经基底进行读取。非晶态标记相对于晶态记录层的反射差异促成了经调制的激光束，这一激光束随后由检测器转换为随所记录的信息变化的调制光电流。
相变光学记录的一个最重要要求是高数据速率，这意味着需要以至少30-50Mbit/s的用户数据速率在介质上写入和重写数据。高密度记录和高数据速率光学记录介质中尤其需要高数据速率，所述光学记录介质可以是例如盘形CD-RW高速度记录盘、DVD-RW、DVD+RW、DVD-RAM、红光DVR和也被称为蓝光盘(BD)的蓝光DVR，它们分别是已知的光盘和新一代高密度数字通用或视频盘+RW和-RW以及数字视频记录光学存储盘的缩写，其中，RW和RAM代表这些盘的可重写能力，红光和蓝光代表所使用的激光波长。这种高数据速率需要记录层具有高晶化速度，即，在DOW过程中晶化时间小于30ns。这也适用于上述盘的多叠层版本的记录层。完全擦除时间(CET)定义为用于在晶态环境下完成写入非晶态标记的晶化的擦除脉冲的最短持续时间。通常以静态试验器测量CET。对于具有每120mm盘4.7GB的记录密度的DVD+RW，需要26Mbit/s的用户数据位速率，对于蓝光DVR，所述速率为35Mibt/s。对于DVD+RW和蓝光DVR的高速版本，需要50Mibt/s和更高的数据速率。AV信息流确定了对音频/视频(AV)应用的数据速率，但对于计算机数据应用则没有对数据速率作出限制，即越高越好。这些数据位速率中的每一个都被变换为最大CET，所述最大CET受到多个参数的影响，例如记录叠层的热设计以及所使用的记录层材料。
为了确保预先记录的非晶态标记能够在DOW期间再结晶，记录层必须具有适当的晶化速度，以相对于激光束匹配介质的速度。如果晶化速度不够高，则代表旧数据的先前记录的非晶态标记将不能在DOW期间完全擦除，所述擦除意味着再结晶。另一方面，当晶化时间缩短时，由于晶态背景下的微晶生长是不可避免的，因此，非晶化过程变难。这形成了边缘不规则的相对较小的非晶态标记(低调制)，从而引起抖动水平升高。这限制了盘的密度和数据速率。因此，极其期望具有相对较高的冷却速率的叠层。在多叠层光学记录过程中，由于在另一记录叠层中不存在具有足够冷却能力的层，因此，对于“另一”记录叠层，很难满足所述高冷却速率的要求。多叠层设计可以由符号Ln表示，其中，n代表0或正整数。射束进入的叠层被称为L0，而每个更深的叠层由L1....Ln表示。所述更深是根据入射射束的方向进行理解的。因此，在双叠层设计的情况下，存在两个叠层L0和L1。为了有可能在最深的“第一”叠层(L1)上进行记录，需要将L0设计为对射束而言是基本透明的。然而获得结合了相对较高的透明度和仍具有足够的冷却或散热特性的层是很难的。
现已证明，在所谓MIPI叠层内的AL反射层被Ag反射层取代，其中M是金属反射层，I是ZnS-SiO2，P是例如GeInSbTe记录层的情况下，对于例如DVR盘，其抖动水平和数据速率能被显著改进。这是由于：因为Ag具有高于Al的热导率，所以使用Ag提高了冷却速率。由此可以实现50Mbit/s的DVR盘。然而，由于Ag和频繁使用的ZnS-SiO2介电层之间可能形成化学反应，即形成AgS，因此，盘的保存寿命变得不能接受。薄Ag的引入将引起上述反应，从而恶化了盘的保存寿命。这会引起高噪声电平。
如上所述，为了进行多叠层记录，射束首先进入的另一(或多个)记录叠层必须具有足够的透射度，以确保第一记录叠层具有适当的读/写特性。US专利6190750中公开的所述已知介质具有用于可重写的相变记录的|IP2IM2I+|S|IP1IM1|结构，，其具有两个金属反射层M1和M2，所述反射层分别是相对较厚，具有高光学反射性，和相对较薄，具有相对较高的光学透射性和相当大的导热性。I代表介电层，I+代表另一介电层。P1和P2代表相变记录层，S代表透明隔离层。在所述结构中，激光束首先进入包含P2的叠层(L0)。金属层不仅用作反射层，而且用作散热层，以确保快速冷却，用于在写入过程中淬火非晶相。P1层紧邻记录过程中基本冷却P1层的相对较厚的金属镜面层M1，而P2层紧邻具有有限散热特性的相对薄金属层M2。正如已经阐释的，记录层的冷却作用较大程度上决定了记录过程中非晶态标记的正确形成。为了确保记录过程中可以正确形成非晶态标记，需要足够的散热效果。
在已知介质中，金属层M2最好包括Ag，并具有10到30nm之间的厚度。应当指出，较薄的层不足以在记录过程中淬火或快速冷却记录层的非晶相。由于存在最小厚度要求，因此，M2层的透射率仍然相对较低。因此，L1记录层需要基本较高的射束写入功率。然而，因为与第一(L0)记录叠层相邻的其他记录叠层有可能会被射束不希望的加热，所述射束聚焦在第一记录叠层的记录层上，因此，最好避免使用大射束功率。
发明内容
因此，本发明的目的在于提供一种首段所述类型的多叠层光学数据存储介质，其中，另一记录叠层包括透明金属层，其具有相对较高的射束透射率和足够的散热效果，以确保在所述记录叠层的记录层中正确形成非晶态标记，所述透明层与和透明金属层相邻的层的化学反应性较低。
这些目的是以下述方式实现的：金属反射层主要包括元素Cu，其厚度值选自范围2到10nm。
最好使用较薄的Cu层作为透明金属反射层。惊人的是现已发现：具有低厚度即其厚度在2nm到10nm之间的Cu层也具有相当好的散热效果，以确保正确形成非晶态标记，所述Cu层相对于其它金属例如Al、Ag还对射束具有相对较高的光透射率。此外，Cu层还对相邻层例如ZnS-SiO2层具有相对较低的反应性。相比于与ZnS-SiO2层组合使用时易变为AgS的Ag，几乎测量不出其任何反应性，如图2A和2B所示。
在根据本发明的光学数据存储介质的实施方式中，金属反射层的厚度值选自范围6到8nm。所述范围被证明组合了极好的记录效果，例如，其非晶态标记抖动值较低，光学透射率较高。
在另一实施方式中，金属反射层位于另一记录叠层的记录层最靠近第一记录叠层的一侧。这具有提高L0叠层的记录层的吸收率的优点。
在再一实施方式中，另一金属反射层存在于第一记录叠层中，位于第一记录叠层的记录层的最远离另一记录叠层的一侧。这样，在采用双叠层介质的情况下，可以增加第一记录叠层的反射率，并还可以适当平衡第一记录叠层例如L1的冷却效果与另一记录叠层例如L0的冷却效果。由于第一记录叠层重叠在射束最后到达的叠层上，因此，另一金属反射层是不透明的。对于第一记录叠层的金属反射层，可以使用类似Al、Ti、Au、Ni、Cu、Ag、Rh、Pt、Pd、Ni、Co、Mn和Cr的金属以及这些金属的合金。适宜合金的实施例是AlTi、AlCr和AlTa。所述金属反射层的厚度是不重要的，但是其透射率最好为零，以获得最佳反射效果。实践证明，其厚度通常不高于约100-150nm。
在优选实施方式中，另一金属反射层主要包含元素Cu。在第一记录叠层(Ln)中使用Cu相对于Ag具有低化学反应性的优点。此外，以这种方式，还避免了两种不同金属的应用，在介质的制造过程中避免使用两种不同的金属是有益的，例如可以使生产过程变得更加经济。
在有益实施方式中，第一或另外的记录叠层的记录层与至少一个附加层相接触，所述附加层包括从Al2O3、SiC、Si3N4、MgO、ZnO和AlN的组中选择的化合物，包含它们的非化学计量组成，所述附加层最大厚度为10nm。这些层加快了DOW期间非晶态标记的晶化速度，还直接导致了可能数据速率的提高。这些层与记录层之间的界面用作非晶态标记晶化的成核源。附加层的厚度相对较薄。因此，附加层对热从记录层传导到散热层的传导能力的影响相对较小。换句话说，附加层几乎不会改变散热效果。
记录层最好包括元素Sb和Te。记录层是相变型的。相变材料呈现晶态—非晶态的相变。也可以使用In-Sb-Te、Te-Se-Sb、Ag-In-Sb-Te、Ge-Sb-Te、Ge-In-Sb-Te的化合物。最好使用国际专利申请WO0113370和WO9750084中所描述的化合物，上述申请都是由申请人申请的。WO9750084中的化合物具有由下述以原子百分比表示的公式定义的成分：
Ge50XSb40-40XTe60-10X，其中，0.166≤X≤0.444。这些成分位于在以三角形Ge-Sb-Te成分图中连接化合物GeTe和Sb2Te3的线上，并且包括化学计量化合物Ge2Sb2Te5(X＝0.444)、GeSb2Te4(X＝0.286)和GeSb4Te7(X＝0.166)。这些化合物呈现了较短的晶化(擦除)时间。
WO0113370中所公开的化合物具有由下述以原子百分比表示的公式定义的成分：
QaInbSbcTed(以原子百分比为单位)，其中，
Q是选自Ag和Ge的元素，
2＜a＜8，
0＜b＜6，
55＜c＜80，
15＜d＜30并且a+b+c+d＝100。
另一记录叠层的记录层最好厚度在3到15nm之间。较厚的层将导致光透射性过低。第一记录叠层的记录层可以略厚，例如在3到50nm之间。
在所有记录叠层中，介电层位于射束穿过的相变记录层一侧，保护记录层不受通常的有机隔离层的影响，并最优化光学对比度。考虑到所述光学对比度，所述层的厚度最好限制在15-150nm的范围内。
在第一记录叠层中，记录层和优选金属反射层之间的介电层在10到40nm之间，最好在15到30nm之间。当所述层过薄时，记录层与金属反射层之间的热绝缘将受到负面影响。因此，记录层的冷却速率有可能过大，这会导致晶化过程劣化和循环能力的劣化。介电层厚度的增加将降低冷却速率。为了增加第一记录叠层的记录层的灵敏度，最好采用相对较厚的介电层。
介电层I最好由ZnS和SiO2的混合物构成，例如(ZnS)80(SiO2)20。这些层还可以由SiO2、Ta2O5、TiO2、ZnS、Si3N4和AlN构成，包括其非化学计量组成。
第一和另外的记录叠层之间的透明间隔层具有大于激光束的聚焦深度的厚度，例如10-50μm。所述厚度确保第一和第二记录叠层被光学去耦，即，聚焦在第一记录叠层的记录层上的激光束不会从/向另外的记录叠层读/写信息，反之亦然。这样，相对于单层数据存储介质，存储容量增加。间隔层的材料可以是例如UV固化丙烯酸酯粘合剂，其中，可以在复制过程中生成伺服轨道。
数据存储介质的基底可以对激光波长来说是透明的，所述基底可以由例如聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、无定形聚烯烃或玻璃制成。当射束通过基底的入射表面进入到记录叠层时，仅需要基底是透射的。在典型的实施例中，基底是盘形的，具有120mm的直径和0.6或1.2mm的厚度。当激光束从基底侧的相对侧入射到叠层时，所述基底可以是不透明的。
盘形基底的记录叠层侧的每个记录叠层最好都形成有伺服轨道，所述伺服轨道是可以光学扫描的。所述伺服轨道通常由螺旋形的凹槽构成，在注塑或压模的过程中借助于模具形成在基底上。这些凹槽也可以在复制过程中形成在间隔层的合成树脂上，所述树脂可以是例如UV光固化丙烯酸酯。
可选择的，叠层的最外层借助于保护层相对于环境而屏蔽，所述保护层可以是例如0.1mm的UV光固化聚(甲基)丙烯酸脂(DVR)或0.6mm的聚碳酸酯(DVD)。当激光束通过保护层进入记录叠层时，保护层必须具有良好的光学质量，即，基本没有光学象差，并且厚度基本均匀。在这种情况下，很明显，保护层对于激光是透明的。
可以使用短波长激光例如波长为670nm(红光)到405nm(蓝光)或甚至波长更短的激光实现在记录叠层的记录层上进行记录和擦除数据。
金属反射层和介电层都由真空淀积形成。
相变记录层可以通过真空淀积形成在基底上。已知的真空淀积过程是蒸发(E光束蒸发、坩埚抗热蒸发)、溅射、低压化学气相淀积(CVD)、离子电镀法、离子流辅助蒸发、等离子体增强的CVD。由于反应温度过高，因此不适用正常的热CVD过程。
附图说明
借助于示例性的实施例以及参考附图，将对本发明进行详细的阐释，其中
图1示出了根据本发明的双记录叠层盘的示意性层结构；
图2A和2B分别示出了通过卢瑟福背散射光谱学获得的Ag和Cu相对ZnS:SiO2的界面稳定性的比较结果。
具体实施方式
在图1中，示出了多叠层光学数据存储介质20的一种实施方式，所述多叠层光学数据存储介质用于借助于穿过介质20的入射表面16的激光束30进行可重写的记录。所述介质具有基底1，由聚碳酸酯(PC)构成，其一侧沉积有：
第一记录叠层2(L1)，包括相变型记录层6。第一记录叠层2位于最远离入射表面16的位置。
和另一记录叠层3(L0)，其包括相变型记录层12。所述另一记录叠层3位于比第一记录叠层2更靠近入射表面16的位置。
和金属反射层14，对于射束30是透明的。
金属反射层14由Cu制成，厚度为7nm。透明隔离层9位于记录叠层2和3之间。透明隔离层9厚度为30μm，所述厚度大于聚焦激光束30的聚焦深度。第一记录叠层2的记录层6包括原子组成为Ge5.0In5.5Sb65.0Te24.5的化合物，其厚度为15nm。由Cu构成且厚度为100nm的另一金属反射层4存在于第一记录叠层2中，位于第一记录叠层2的记录层6的最远离另一记录叠层3的一侧。厚度为20nm的介电层5位于记录层6和金属反射层4之间。介电层5由混合物(ZnS)80(SiO2)20构成。介电层7由(ZnS)80(SiO2)20构成，其厚度为90nm，位于第一记录叠层2中最靠近另一记录叠层3的一侧。
另一记录叠层3的记录层12包括原子组成为Ge5.0In5.5Sb65.0Te24.5的化合物，其厚度为6nm。两个介电层11和13分别具有10nm和60nm的厚度，由化合物(ZnS)80(SiO2)20构成，所述介电层与第二记录叠层3的记录层12相邻。由例如对于激光透明的UV固化树脂构成的厚度为100μm的保护层15与另一记录叠层3相邻。旋涂和随后的UV固化可以形成层15。保护层15还可以借助于压敏粘着剂(PSA)层在例如聚碳酸酯(PC)片上形成。
下表概括了当使用Cu或Ag作为反射层14和4时各种参数的比较结果。Rc1或Ra1定义为第一记录叠层2或L1叠层在记录层6分别处于晶相或非晶相时在670nm波长下的光学反射率。光学对比度定义为|Rcn-Ran|/Rmaxn，其中，公式Rmaxn是Rcn或Ran的最大值。n表示叠层(Ln)。在这种情况下，由于所述叠层设计中Rcn大于Ran，因此在叠层3(L0)或叠层2(L1)中，Rmaxn＝Rcn。Tc0定义为叠层3的记录层12处于晶相时叠层3(L0)的透射率。
表1，Cu和Ag情况下各种参数的对比结果
材料 热导性 折射率 透射率(Tc0) 对比度
27℃(w/cmk) n(-)k(-) 对于L0叠层(670nm) 对于L0叠层(670nm)
Cu(7nm) 4.01 0.22 3.77 43.7％ 91％
Ag(7nm) 4.29 0.16 5.45 39.7％ 93％
材料 反射率(Rc1) 对比度
对于L1叠层(670nm) 对于L1叠层(670nm)
Cu(100nm) 22.6％ 98％
Ag(100nm) 23.6％ 98％
670nm下的折射率(n)和消光系数(k)在表1中列出。最优化叠层的反射率、透射率和对比度也示出于表1中。可以看出，在射束波长为670nm、厚度为7nm的情况下，具有Cu反射层14的L0叠层具有约为44％的透射率，具有Ag的反射层的L0叠层具有约40％的透射率。当L0的记录层12处于完全非晶态时，这些数值分别为59％和52％。实际上，完全的非晶态记录层通常不会出现。因此，可以得出结论：当使用Cu替代Ag时，L0叠层的透射率大约提高了10％。具有Cu反射层4的L1叠层以及具有Ag反射层4的L1叠层具有相似的晶体反射率和对比度。
Cu和Ag的堆积热导率系数也在表1中示出。Cu的堆积热导率非常接近Ag的热导率。由于现已发现，在对比层厚度下，Cu相对于Ag显示了更好的记录效果和冷却效果，因此以薄层形式存在的这些层的热导率具有不同值，并显示出了更大的差别。从所述记录实验中可以得出结论：包含Cu反射层14的L0记录叠层3呈现了宽阔的最佳记录功率窗口，即涵盖更高记录功率的使用，采用上述高功率，可以将写入非晶态标记的抖动水平降低到8.5％。这意味着更高记录功率的使用仍能获得良好定义的记录非晶态标记(低抖动水平)，并为叠层3提供了高冷却速率。然而，当将Ag用作反射层14时，所述记录窗口变得很窄，意味着冷却速度很低。
在图2A和2B中，分别示出了对于分别具有M＝Ag和Cu以及I为ZnS:SiO2层的(基底)MI叠层的卢瑟福背散射光谱学(RBS)的分析结果。(基底)MI代表在RBS装置中使用的实验叠层。高能，例如2MeV，He+离子通过采样原子而被散射，以被调查。作为能量或通道的函数的、由标准化输出表示的背散射的He+离子的数量的测量结果提供了关于作为深度的函数的材料的成分的信息。深度标尺由样品中He+离子的电子自停决定。在频谱中，横轴代表通道(C)，纵轴代表标准化输出(Y)。ZnS:SiO2层和随后的Ag或Cu层通过溅射沉积在硅基底上。溅射之后，对新沉积的样本进行RBS测量。在所获得的具有不同峰值的频谱中，标签“t＝0”表示沉积层。此后，将样本在真空中经过2个小时加热到300度。所述加热步骤加速了金属和相邻ZnS:SiO2层之间的反应效果。随后，RBS测量被重复以产生一频谱，其标记为“t＝2h@300℃”。具有例如S的金属层对ZnS:SiO2层的反应随着频谱中S的位移和扩展以及金属波峰变得可见。在图2A和2B中，可以清楚的看出，所有元素的峰值在溅射之后都是彼此分离的。经过2小时300度的处理之后，Ag和ZnS-SiO2层之间发生相互扩散，导致每个单峰大幅度下降，从元素到元素的转变变得不过于陡峭，如图2A所示。这表示作为化学反应的结果，形成了一些化合物。当用Cu取代Ag时，所述反应几乎完全消失，参见图2B。
应当注意，上述实施方式和实验数据仅是示意说明，并不对本发明作出任何限制，本领域技术人员可以在不背离附加的权利要求的范围的情况下设计多种改变的实施方式。在权利要求中，置于括号内的任何附图标记都不构成对权利要求的限制。词语“包括”并不排除权利要求所列举的元件或步骤之外的元件或步骤的存在。元件之前的词语“一个”并不排除多个这种元件的存在。在互不相同的从属权利要求中列举了某些措施这一事实并不表示这些措施不能组合以实现本发明的优点。
根据本发明，提供了一种借助于聚焦射束执行可重写记录的多叠层光学数据存储介质。所述介质具有至少两个记录叠层，所述记录叠层包括相变型记录层。与入射射束相交的记录叠层之外的记录叠层至少具有一金属反射层，其具有对激光束而言很高的透射率以及对于所述叠层中的记录层的良好冷却效果。上述效果可以由下述方式实现：金属反射层主要包括元素Cu，其厚度在2到10nm之间。
Claims (8)
1、一种多叠层光学数据存储介质，用于在记录过程中使用进入介质的入射表面的聚焦射束实现可重写的记录，包括：
基底，其一侧沉积有：
包括相变型记录层的第一记录叠层，所述第一记录叠层位于最远离入射表面的位置上，
至少一个另外的记录叠层，包括相变型记录层，相比于第一记录叠层更靠近入射表面，该叠层还包括金属反射层，所述金属反射层对于射束而言是透明的，
位于记录叠层之间的透明隔离层，所述透明隔离层的厚度大于聚焦激光束的聚焦深度，
其特征在于，
金属反射层主要包括元素Cu，其厚度值选自范围2到10nm。
2、根据权利要求1所述的光学数据存储介质，其中，金属反射层的厚度值选自范围6到8nm。
3、根据权利要求1或2所述的光学数据存储介质，其中，金属反射层位于另外的记录叠层中的记录层的最靠近第一记录叠层的一侧。
4、根据权利要求1-3其中之一所述的光学数据存储介质，其中，另一金属反射层存在于第一记录叠层中，位于第一记录叠层中的记录层的最远离所述另外记录叠层的一侧。
5、根据权利要求4所述的光学数据存储介质，其中，另一金属反射层主要包括元素Cu。
6、根据权利要求1-5其中之一所述的光学数据存储介质，其中，第一或另外的记录叠层的记录层与至少一个附加层相接触，所述附加层包括选自Al2O3、SiC、Si3N4、MgO、ZnO和AlN的化合物，包含所述化合物的非化学计量组成，所述附加层最大厚度为10nm。
7、根据权利要求1所述的光学数据存储介质，其中，记录层包括元素Sb和Te。
8、根据权利要求1-7其中之一所述的光学数据存储介质在多叠层和高数据速率记录中的应用。
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