CN118043505A - 碳化硅单晶晶圆和碳化硅单晶锭 - Google Patents

碳化硅单晶晶圆和碳化硅单晶锭 Download PDF

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Publication number
CN118043505A
CN118043505A CN202280066172.1A CN202280066172A CN118043505A CN 118043505 A CN118043505 A CN 118043505A CN 202280066172 A CN202280066172 A CN 202280066172A CN 118043505 A CN118043505 A CN 118043505A
Authority
CN
China
Prior art keywords
silicon carbide
single crystal
carbide single
wafer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280066172.1A
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English (en)
Chinese (zh)
Inventor
梅崎智典
熊谷和人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of CN118043505A publication Critical patent/CN118043505A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202280066172.1A 2021-09-30 2022-09-26 碳化硅单晶晶圆和碳化硅单晶锭 Pending CN118043505A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-160608 2021-09-30
JP2021160608 2021-09-30
PCT/JP2022/035724 WO2023054264A1 (ja) 2021-09-30 2022-09-26 炭化ケイ素単結晶ウエハ及び炭化ケイ素単結晶インゴット

Publications (1)

Publication Number Publication Date
CN118043505A true CN118043505A (zh) 2024-05-14

Family

ID=85782667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280066172.1A Pending CN118043505A (zh) 2021-09-30 2022-09-26 碳化硅单晶晶圆和碳化硅单晶锭

Country Status (7)

Country Link
US (1) US12325934B2 (https=)
EP (1) EP4411030A4 (https=)
JP (1) JPWO2023054264A1 (https=)
KR (1) KR20240072095A (https=)
CN (1) CN118043505A (https=)
TW (1) TW202331031A (https=)
WO (1) WO2023054264A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12325935B2 (en) * 2021-09-30 2025-06-10 Central Glass Company, Limited Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2923260B2 (ja) * 1997-03-19 1999-07-26 東洋炭素株式会社 単結晶引上装置、高純度黒鉛材料及びその製造方法
SE525574C2 (sv) * 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
JP4853449B2 (ja) 2007-10-11 2012-01-11 住友金属工業株式会社 ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス
EP2245217A1 (en) * 2007-12-12 2010-11-03 Dow Corning Corporation Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
JP4469396B2 (ja) 2008-01-15 2010-05-26 新日本製鐵株式会社 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
JP5803519B2 (ja) * 2011-09-29 2015-11-04 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法及び製造装置
WO2014034080A1 (ja) 2012-08-26 2014-03-06 国立大学法人名古屋大学 ３Ｃ－ＳｉＣ単結晶およびその製造方法
JP6238249B2 (ja) * 2013-05-20 2017-11-29 国立研究開発法人産業技術総合研究所 炭化珪素単結晶及びその製造方法
JP6152981B2 (ja) 2013-08-02 2017-06-28 株式会社デンソー 炭化珪素単結晶
JP6090287B2 (ja) 2014-10-31 2017-03-08 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
WO2017047536A1 (ja) 2015-09-14 2017-03-23 新日鐵住金株式会社 ＳｉＣ単結晶の製造装置、ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶材
JP6200018B2 (ja) 2016-03-15 2017-09-20 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハ
JP6845418B2 (ja) 2017-01-13 2021-03-17 セントラル硝子株式会社 炭化ケイ素単結晶ウェハ、インゴット及びその製造方法
JP6904774B2 (ja) * 2017-04-28 2021-07-21 富士電機株式会社 炭化珪素エピタキシャルウェハ、炭化珪素絶縁ゲート型バイポーラトランジスタ及びこれらの製造方法
JP2021160608A (ja) 2020-03-31 2021-10-11 株式会社エクォス・リサーチ 移動装置
US12325935B2 (en) * 2021-09-30 2025-06-10 Central Glass Company, Limited Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide
EP4421221A4 (en) * 2021-10-22 2025-10-29 Ngk Insulators Ltd SIC SUBSTRATE, SIC COMPOSITE SUBSTRATE
JP2023127894A (ja) * 2022-03-02 2023-09-14 株式会社デンソー 炭化珪素単結晶およびその製造方法

Also Published As

Publication number Publication date
WO2023054264A1 (ja) 2023-04-06
US12325934B2 (en) 2025-06-10
EP4411030A4 (en) 2025-10-08
TW202331031A (zh) 2023-08-01
US20240344237A1 (en) 2024-10-17
EP4411030A1 (en) 2024-08-07
JPWO2023054264A1 (https=) 2023-04-06
KR20240072095A (ko) 2024-05-23

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