JPWO2023054264A1 - - Google Patents
Info
- Publication number
- JPWO2023054264A1 JPWO2023054264A1 JP2023551472A JP2023551472A JPWO2023054264A1 JP WO2023054264 A1 JPWO2023054264 A1 JP WO2023054264A1 JP 2023551472 A JP2023551472 A JP 2023551472A JP 2023551472 A JP2023551472 A JP 2023551472A JP WO2023054264 A1 JPWO2023054264 A1 JP WO2023054264A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021160608 | 2021-09-30 | ||
| PCT/JP2022/035724 WO2023054264A1 (ja) | 2021-09-30 | 2022-09-26 | 炭化ケイ素単結晶ウエハ及び炭化ケイ素単結晶インゴット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023054264A1 true JPWO2023054264A1 (https=) | 2023-04-06 |
| JPWO2023054264A5 JPWO2023054264A5 (https=) | 2024-06-21 |
Family
ID=85782667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023551472A Pending JPWO2023054264A1 (https=) | 2021-09-30 | 2022-09-26 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12325934B2 (https=) |
| EP (1) | EP4411030A4 (https=) |
| JP (1) | JPWO2023054264A1 (https=) |
| KR (1) | KR20240072095A (https=) |
| CN (1) | CN118043505A (https=) |
| TW (1) | TW202331031A (https=) |
| WO (1) | WO2023054264A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12325935B2 (en) * | 2021-09-30 | 2025-06-10 | Central Glass Company, Limited | Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2923260B2 (ja) * | 1997-03-19 | 1999-07-26 | 東洋炭素株式会社 | 単結晶引上装置、高純度黒鉛材料及びその製造方法 |
| SE525574C2 (sv) * | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
| JP4853449B2 (ja) | 2007-10-11 | 2012-01-11 | 住友金属工業株式会社 | ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス |
| EP2245217A1 (en) * | 2007-12-12 | 2010-11-03 | Dow Corning Corporation | Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
| JP4469396B2 (ja) | 2008-01-15 | 2010-05-26 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ |
| JP5803519B2 (ja) * | 2011-09-29 | 2015-11-04 | トヨタ自動車株式会社 | ＳｉＣ単結晶の製造方法及び製造装置 |
| WO2014034080A1 (ja) | 2012-08-26 | 2014-03-06 | 国立大学法人名古屋大学 | ３Ｃ－ＳｉＣ単結晶およびその製造方法 |
| JP6238249B2 (ja) * | 2013-05-20 | 2017-11-29 | 国立研究開発法人産業技術総合研究所 | 炭化珪素単結晶及びその製造方法 |
| JP6152981B2 (ja) | 2013-08-02 | 2017-06-28 | 株式会社デンソー | 炭化珪素単結晶 |
| JP6090287B2 (ja) | 2014-10-31 | 2017-03-08 | トヨタ自動車株式会社 | ＳｉＣ単結晶の製造方法 |
| WO2017047536A1 (ja) | 2015-09-14 | 2017-03-23 | 新日鐵住金株式会社 | ＳｉＣ単結晶の製造装置、ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶材 |
| JP6200018B2 (ja) | 2016-03-15 | 2017-09-20 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶ウェハ |
| JP6845418B2 (ja) | 2017-01-13 | 2021-03-17 | セントラル硝子株式会社 | 炭化ケイ素単結晶ウェハ、インゴット及びその製造方法 |
| JP6904774B2 (ja) * | 2017-04-28 | 2021-07-21 | 富士電機株式会社 | 炭化珪素エピタキシャルウェハ、炭化珪素絶縁ゲート型バイポーラトランジスタ及びこれらの製造方法 |
| JP2021160608A (ja) | 2020-03-31 | 2021-10-11 | 株式会社エクォス・リサーチ | 移動装置 |
| US12325935B2 (en) * | 2021-09-30 | 2025-06-10 | Central Glass Company, Limited | Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide |
| EP4421221A4 (en) * | 2021-10-22 | 2025-10-29 | Ngk Insulators Ltd | SIC SUBSTRATE, SIC COMPOSITE SUBSTRATE |
| JP2023127894A (ja) * | 2022-03-02 | 2023-09-14 | 株式会社デンソー | 炭化珪素単結晶およびその製造方法 |
-
2022
- 2022-09-26 EP EP22876131.8A patent/EP4411030A4/en active Pending
- 2022-09-26 JP JP2023551472A patent/JPWO2023054264A1/ja active Pending
- 2022-09-26 KR KR1020237045445A patent/KR20240072095A/ko active Pending
- 2022-09-26 CN CN202280066172.1A patent/CN118043505A/zh active Pending
- 2022-09-26 US US18/682,999 patent/US12325934B2/en active Active
- 2022-09-26 WO PCT/JP2022/035724 patent/WO2023054264A1/ja not_active Ceased
- 2022-09-30 TW TW111137382A patent/TW202331031A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023054264A1 (ja) | 2023-04-06 |
| US12325934B2 (en) | 2025-06-10 |
| EP4411030A4 (en) | 2025-10-08 |
| TW202331031A (zh) | 2023-08-01 |
| US20240344237A1 (en) | 2024-10-17 |
| EP4411030A1 (en) | 2024-08-07 |
| KR20240072095A (ko) | 2024-05-23 |
| CN118043505A (zh) | 2024-05-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231114 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250616 |