CN117813932A - 自旋轨道扭矩磁阻随机存取存储器阵列 - Google Patents
自旋轨道扭矩磁阻随机存取存储器阵列 Download PDFInfo
- Publication number
- CN117813932A CN117813932A CN202280052333.1A CN202280052333A CN117813932A CN 117813932 A CN117813932 A CN 117813932A CN 202280052333 A CN202280052333 A CN 202280052333A CN 117813932 A CN117813932 A CN 117813932A
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- sot
- mram
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/401,394 | 2021-08-13 | ||
| US17/401,394 US12020736B2 (en) | 2021-08-13 | 2021-08-13 | Spin-orbit-torque magnetoresistive random-access memory array |
| PCT/IB2022/056619 WO2023017338A1 (en) | 2021-08-13 | 2022-07-19 | Spin-orbit-torque magnetoresistive random-access memory array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117813932A true CN117813932A (zh) | 2024-04-02 |
Family
ID=85177531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280052333.1A Pending CN117813932A (zh) | 2021-08-13 | 2022-07-19 | 自旋轨道扭矩磁阻随机存取存储器阵列 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12020736B2 (https=) |
| JP (1) | JP2024528302A (https=) |
| CN (1) | CN117813932A (https=) |
| DE (1) | DE112022003125T5 (https=) |
| GB (1) | GB2624142A (https=) |
| WO (1) | WO2023017338A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11915734B2 (en) | 2021-08-13 | 2024-02-27 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory with integrated diode |
| US12020736B2 (en) | 2021-08-13 | 2024-06-25 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory array |
| US11793001B2 (en) * | 2021-08-13 | 2023-10-17 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory |
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| JP5873981B2 (ja) * | 2012-01-19 | 2016-03-01 | パナソニックＩｐマネジメント株式会社 | 抵抗変化型不揮発性記憶装置の製造方法及び抵抗変化型不揮発性記憶装置 |
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| US11793001B2 (en) | 2021-08-13 | 2023-10-17 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory |
| US12020736B2 (en) | 2021-08-13 | 2024-06-25 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory array |
| US11915734B2 (en) | 2021-08-13 | 2024-02-27 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory with integrated diode |
| US20230065109A1 (en) | 2021-09-02 | 2023-03-02 | Floracraft Corporation | Flower Arranging Device For A Vase |
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| US20230089984A1 (en) | 2021-09-20 | 2023-03-23 | International Business Machines Corporation | Stacked spin-orbit torque magnetoresistive random access memory |
-
2021
- 2021-08-13 US US17/401,394 patent/US12020736B2/en active Active
-
2022
- 2022-07-19 CN CN202280052333.1A patent/CN117813932A/zh active Pending
- 2022-07-19 GB GB2402583.5A patent/GB2624142A/en active Pending
- 2022-07-19 DE DE112022003125.5T patent/DE112022003125T5/de active Pending
- 2022-07-19 JP JP2024508031A patent/JP2024528302A/ja active Pending
- 2022-07-19 WO PCT/IB2022/056619 patent/WO2023017338A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| DE112022003125T5 (de) | 2024-04-11 |
| JP2024528302A (ja) | 2024-07-26 |
| GB2624142A (en) | 2024-05-08 |
| US12020736B2 (en) | 2024-06-25 |
| WO2023017338A1 (en) | 2023-02-16 |
| US20230049812A1 (en) | 2023-02-16 |
| GB202402583D0 (en) | 2024-04-10 |
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