GB2624142A - Spin-orbit-torque magnetoresistive random-access memory array - Google Patents
Spin-orbit-torque magnetoresistive random-access memory array Download PDFInfo
- Publication number
- GB2624142A GB2624142A GB2402583.5A GB202402583A GB2624142A GB 2624142 A GB2624142 A GB 2624142A GB 202402583 A GB202402583 A GB 202402583A GB 2624142 A GB2624142 A GB 2624142A
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- United Kingdom
- Prior art keywords
- line
- sot
- mram
- disposed
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/401,394 US12020736B2 (en) | 2021-08-13 | 2021-08-13 | Spin-orbit-torque magnetoresistive random-access memory array |
| PCT/IB2022/056619 WO2023017338A1 (en) | 2021-08-13 | 2022-07-19 | Spin-orbit-torque magnetoresistive random-access memory array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB202402583D0 GB202402583D0 (en) | 2024-04-10 |
| GB2624142A true GB2624142A (en) | 2024-05-08 |
Family
ID=85177531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2402583.5A Pending GB2624142A (en) | 2021-08-13 | 2022-07-19 | Spin-orbit-torque magnetoresistive random-access memory array |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12020736B2 (https=) |
| JP (1) | JP2024528302A (https=) |
| CN (1) | CN117813932A (https=) |
| DE (1) | DE112022003125T5 (https=) |
| GB (1) | GB2624142A (https=) |
| WO (1) | WO2023017338A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11915734B2 (en) | 2021-08-13 | 2024-02-27 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory with integrated diode |
| US12020736B2 (en) | 2021-08-13 | 2024-06-25 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory array |
| US11793001B2 (en) * | 2021-08-13 | 2023-10-17 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory |
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| US11915734B2 (en) | 2021-08-13 | 2024-02-27 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory with integrated diode |
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-
2021
- 2021-08-13 US US17/401,394 patent/US12020736B2/en active Active
-
2022
- 2022-07-19 CN CN202280052333.1A patent/CN117813932A/zh active Pending
- 2022-07-19 GB GB2402583.5A patent/GB2624142A/en active Pending
- 2022-07-19 DE DE112022003125.5T patent/DE112022003125T5/de active Pending
- 2022-07-19 JP JP2024508031A patent/JP2024528302A/ja active Pending
- 2022-07-19 WO PCT/IB2022/056619 patent/WO2023017338A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109643567A (zh) * | 2016-08-25 | 2019-04-16 | 高通股份有限公司 | 高速、低功率自旋轨道矩(sot)辅助的自旋转移矩磁随机访问存储器(stt-mram)位单元阵列 |
| US20200098822A1 (en) * | 2018-09-21 | 2020-03-26 | Globalfoundries Singapore Pte. Ltd. | Magnetoresistive random access memory structures having two magnetic tunnel junction elements |
| US20200350364A1 (en) * | 2019-05-02 | 2020-11-05 | Western Digital Technologies, Inc. | Spin-orbit-torque magnetoresistive memory cell with integrated selector elements and method of making the same |
| CN111740011A (zh) * | 2020-06-24 | 2020-10-02 | 中国科学院微电子研究所 | 自旋轨道扭矩磁随机存储单元、存储阵列及存储器 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112022003125T5 (de) | 2024-04-11 |
| JP2024528302A (ja) | 2024-07-26 |
| CN117813932A (zh) | 2024-04-02 |
| US12020736B2 (en) | 2024-06-25 |
| WO2023017338A1 (en) | 2023-02-16 |
| US20230049812A1 (en) | 2023-02-16 |
| GB202402583D0 (en) | 2024-04-10 |
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