CN117769757A - 等离子体处理方法 - Google Patents

等离子体处理方法 Download PDF

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Publication number
CN117769757A
CN117769757A CN202280008603.9A CN202280008603A CN117769757A CN 117769757 A CN117769757 A CN 117769757A CN 202280008603 A CN202280008603 A CN 202280008603A CN 117769757 A CN117769757 A CN 117769757A
Authority
CN
China
Prior art keywords
pulse
plasma
frequency
etching
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280008603.9A
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English (en)
Chinese (zh)
Inventor
南珠铉
石丸正人
田原正太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN117769757A publication Critical patent/CN117769757A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Plasma Technology (AREA)
CN202280008603.9A 2022-07-25 2022-07-25 等离子体处理方法 Pending CN117769757A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/028584 WO2024023877A1 (ja) 2022-07-25 2022-07-25 プラズマ処理方法

Publications (1)

Publication Number Publication Date
CN117769757A true CN117769757A (zh) 2024-03-26

Family

ID=89705732

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280008603.9A Pending CN117769757A (zh) 2022-07-25 2022-07-25 等离子体处理方法

Country Status (6)

Country Link
US (1) US20250149294A1 (https=)
JP (1) JP7519549B2 (https=)
KR (1) KR102916926B1 (https=)
CN (1) CN117769757A (https=)
TW (1) TWI869908B (https=)
WO (1) WO2024023877A1 (https=)

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2764575B2 (ja) 1996-08-05 1998-06-11 名古屋大学長 ラジカルの制御方法
TW388953B (en) * 1998-04-13 2000-05-01 Taiwan Semiconductor Mfg Method of monitoring the shallow trench etching process
DE102004020834B4 (de) * 2004-04-28 2010-07-15 Qimonda Ag Herstellungsverfahren für eine Halbleiterstruktur
JP4877747B2 (ja) * 2006-03-23 2012-02-15 東京エレクトロン株式会社 プラズマエッチング方法
JP2010021442A (ja) 2008-07-11 2010-01-28 Ulvac Japan Ltd プラズマ処理方法及びプラズマ処理装置
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US8969210B2 (en) * 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
JP5718124B2 (ja) * 2011-03-30 2015-05-13 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP2013131587A (ja) * 2011-12-21 2013-07-04 Hitachi High-Technologies Corp プラズマ処理方法
JP5792613B2 (ja) 2011-12-28 2015-10-14 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP6002556B2 (ja) * 2012-11-27 2016-10-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6035606B2 (ja) * 2013-04-09 2016-11-30 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP6095528B2 (ja) * 2013-09-04 2017-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9269587B2 (en) 2013-09-06 2016-02-23 Applied Materials, Inc. Methods for etching materials using synchronized RF pulses
JP6670692B2 (ja) * 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
WO2019099870A1 (en) * 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Synchronized pulsing of plasma processing source and substrate bias
US12230475B2 (en) * 2018-08-14 2025-02-18 Tokyo Electron Limited Systems and methods of control for plasma processing
CN112534544B (zh) * 2018-08-30 2025-02-11 东京毅力科创株式会社 控制等离子体加工的系统和方法
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
WO2020100338A1 (ja) * 2019-06-21 2020-05-22 株式会社日立ハイテク プラズマ処理方法
US11915910B2 (en) * 2021-03-25 2024-02-27 Tokyo Electron Limited Fast neutral generation for plasma processing

Also Published As

Publication number Publication date
TW202405937A (zh) 2024-02-01
JP7519549B2 (ja) 2024-07-19
WO2024023877A1 (ja) 2024-02-01
TWI869908B (zh) 2025-01-11
US20250149294A1 (en) 2025-05-08
JPWO2024023877A1 (https=) 2024-02-01
KR102916926B1 (ko) 2026-01-23
KR20240016242A (ko) 2024-02-06

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