JPWO2024023877A1 - - Google Patents

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Publication number
JPWO2024023877A1
JPWO2024023877A1 JP2023535334A JP2023535334A JPWO2024023877A1 JP WO2024023877 A1 JPWO2024023877 A1 JP WO2024023877A1 JP 2023535334 A JP2023535334 A JP 2023535334A JP 2023535334 A JP2023535334 A JP 2023535334A JP WO2024023877 A1 JPWO2024023877 A1 JP WO2024023877A1
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JP
Japan
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JP2023535334A
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Japanese (ja)
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JP7519549B2 (ja
JPWO2024023877A5 (https=
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Plasma Technology (AREA)
JP2023535334A 2022-07-25 2022-07-25 プラズマ処理方法 Active JP7519549B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/028584 WO2024023877A1 (ja) 2022-07-25 2022-07-25 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JPWO2024023877A1 true JPWO2024023877A1 (https=) 2024-02-01
JPWO2024023877A5 JPWO2024023877A5 (https=) 2024-07-03
JP7519549B2 JP7519549B2 (ja) 2024-07-19

Family

ID=89705732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023535334A Active JP7519549B2 (ja) 2022-07-25 2022-07-25 プラズマ処理方法

Country Status (6)

Country Link
US (1) US20250149294A1 (https=)
JP (1) JP7519549B2 (https=)
KR (1) KR102916926B1 (https=)
CN (1) CN117769757A (https=)
TW (1) TWI869908B (https=)
WO (1) WO2024023877A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107363A (ja) * 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014204050A (ja) * 2013-04-09 2014-10-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP2014531753A (ja) * 2011-09-07 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ デュアルチャンバ構成のパルスプラズマチャンバ
JP2015050440A (ja) * 2013-09-04 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2017069542A (ja) * 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
WO2020100338A1 (ja) * 2019-06-21 2020-05-22 株式会社日立ハイテク プラズマ処理方法
JP2021503700A (ja) * 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理源および基板バイアスの同期パルス化
JP2021534545A (ja) * 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
JP2021534544A (ja) * 2018-08-30 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2764575B2 (ja) 1996-08-05 1998-06-11 名古屋大学長 ラジカルの制御方法
TW388953B (en) * 1998-04-13 2000-05-01 Taiwan Semiconductor Mfg Method of monitoring the shallow trench etching process
DE102004020834B4 (de) * 2004-04-28 2010-07-15 Qimonda Ag Herstellungsverfahren für eine Halbleiterstruktur
JP4877747B2 (ja) * 2006-03-23 2012-02-15 東京エレクトロン株式会社 プラズマエッチング方法
JP2010021442A (ja) 2008-07-11 2010-01-28 Ulvac Japan Ltd プラズマ処理方法及びプラズマ処理装置
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US8969210B2 (en) * 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
JP5718124B2 (ja) * 2011-03-30 2015-05-13 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP2013131587A (ja) * 2011-12-21 2013-07-04 Hitachi High-Technologies Corp プラズマ処理方法
JP5792613B2 (ja) 2011-12-28 2015-10-14 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9269587B2 (en) 2013-09-06 2016-02-23 Applied Materials, Inc. Methods for etching materials using synchronized RF pulses
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
US11915910B2 (en) * 2021-03-25 2024-02-27 Tokyo Electron Limited Fast neutral generation for plasma processing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014531753A (ja) * 2011-09-07 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ デュアルチャンバ構成のパルスプラズマチャンバ
JP2014107363A (ja) * 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014204050A (ja) * 2013-04-09 2014-10-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP2015050440A (ja) * 2013-09-04 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2017069542A (ja) * 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2021503700A (ja) * 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理源および基板バイアスの同期パルス化
JP2021534545A (ja) * 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
JP2021534544A (ja) * 2018-08-30 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
WO2020100338A1 (ja) * 2019-06-21 2020-05-22 株式会社日立ハイテク プラズマ処理方法

Also Published As

Publication number Publication date
TW202405937A (zh) 2024-02-01
JP7519549B2 (ja) 2024-07-19
WO2024023877A1 (ja) 2024-02-01
TWI869908B (zh) 2025-01-11
US20250149294A1 (en) 2025-05-08
CN117769757A (zh) 2024-03-26
KR102916926B1 (ko) 2026-01-23
KR20240016242A (ko) 2024-02-06

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