JP7519549B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

Info

Publication number
JP7519549B2
JP7519549B2 JP2023535334A JP2023535334A JP7519549B2 JP 7519549 B2 JP7519549 B2 JP 7519549B2 JP 2023535334 A JP2023535334 A JP 2023535334A JP 2023535334 A JP2023535334 A JP 2023535334A JP 7519549 B2 JP7519549 B2 JP 7519549B2
Authority
JP
Japan
Prior art keywords
pulse
plasma
processing method
plasma processing
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023535334A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024023877A5 (https=
JPWO2024023877A1 (https=
Inventor
珠鉉 南
正人 石丸
正太 田原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of JPWO2024023877A1 publication Critical patent/JPWO2024023877A1/ja
Publication of JPWO2024023877A5 publication Critical patent/JPWO2024023877A5/ja
Application granted granted Critical
Publication of JP7519549B2 publication Critical patent/JP7519549B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Plasma Technology (AREA)
JP2023535334A 2022-07-25 2022-07-25 プラズマ処理方法 Active JP7519549B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/028584 WO2024023877A1 (ja) 2022-07-25 2022-07-25 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JPWO2024023877A1 JPWO2024023877A1 (https=) 2024-02-01
JPWO2024023877A5 JPWO2024023877A5 (https=) 2024-07-03
JP7519549B2 true JP7519549B2 (ja) 2024-07-19

Family

ID=89705732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023535334A Active JP7519549B2 (ja) 2022-07-25 2022-07-25 プラズマ処理方法

Country Status (6)

Country Link
US (1) US20250149294A1 (https=)
JP (1) JP7519549B2 (https=)
KR (1) KR102916926B1 (https=)
CN (1) CN117769757A (https=)
TW (1) TWI869908B (https=)
WO (1) WO2024023877A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107363A (ja) 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014204050A (ja) 2013-04-09 2014-10-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP2014531753A (ja) 2011-09-07 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ デュアルチャンバ構成のパルスプラズマチャンバ
JP2015050440A (ja) 2013-09-04 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
WO2020100338A1 (ja) 2019-06-21 2020-05-22 株式会社日立ハイテク プラズマ処理方法
JP2021503700A (ja) 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理源および基板バイアスの同期パルス化
JP2021534545A (ja) 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
JP2021534544A (ja) 2018-08-30 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2764575B2 (ja) 1996-08-05 1998-06-11 名古屋大学長 ラジカルの制御方法
TW388953B (en) * 1998-04-13 2000-05-01 Taiwan Semiconductor Mfg Method of monitoring the shallow trench etching process
DE102004020834B4 (de) * 2004-04-28 2010-07-15 Qimonda Ag Herstellungsverfahren für eine Halbleiterstruktur
JP4877747B2 (ja) * 2006-03-23 2012-02-15 東京エレクトロン株式会社 プラズマエッチング方法
JP2010021442A (ja) 2008-07-11 2010-01-28 Ulvac Japan Ltd プラズマ処理方法及びプラズマ処理装置
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US8969210B2 (en) * 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
JP5718124B2 (ja) * 2011-03-30 2015-05-13 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP2013131587A (ja) * 2011-12-21 2013-07-04 Hitachi High-Technologies Corp プラズマ処理方法
JP5792613B2 (ja) 2011-12-28 2015-10-14 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9269587B2 (en) 2013-09-06 2016-02-23 Applied Materials, Inc. Methods for etching materials using synchronized RF pulses
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
US11915910B2 (en) * 2021-03-25 2024-02-27 Tokyo Electron Limited Fast neutral generation for plasma processing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014531753A (ja) 2011-09-07 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ デュアルチャンバ構成のパルスプラズマチャンバ
JP2014107363A (ja) 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014204050A (ja) 2013-04-09 2014-10-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP2015050440A (ja) 2013-09-04 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2021503700A (ja) 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理源および基板バイアスの同期パルス化
JP2021534545A (ja) 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
JP2021534544A (ja) 2018-08-30 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
WO2020100338A1 (ja) 2019-06-21 2020-05-22 株式会社日立ハイテク プラズマ処理方法

Also Published As

Publication number Publication date
TW202405937A (zh) 2024-02-01
WO2024023877A1 (ja) 2024-02-01
TWI869908B (zh) 2025-01-11
US20250149294A1 (en) 2025-05-08
CN117769757A (zh) 2024-03-26
JPWO2024023877A1 (https=) 2024-02-01
KR102916926B1 (ko) 2026-01-23
KR20240016242A (ko) 2024-02-06

Similar Documents

Publication Publication Date Title
JP6138653B2 (ja) ドライエッチング方法
TWI501289B (zh) A plasma processing method and a plasma processing apparatus
JP6298867B2 (ja) プラズマ処理方法およびプラズマ処理装置
US20130001197A1 (en) Plasma processing method
JPH10150025A (ja) プラズマ反応装置
CN114902372A (zh) 使用脉冲电子束进行等离子体加工的方法
JP2015050440A (ja) プラズマ処理方法
KR102447235B1 (ko) 플라스마 처리 방법
JP7519549B2 (ja) プラズマ処理方法
JP6228860B2 (ja) 半導体装置の製造方法
US20250259821A1 (en) Method to enhance etch rate and improve critical dimension of features and mask selectivity
CN100492598C (zh) 使用交替淀积/蚀刻工序蚀刻衬底中特征的方法和设备
KR102482734B1 (ko) 고주파 펄스 소스 및 저주파 펄스 바이어스를 이용한 플라즈마 극고종횡비 식각 방법
JP7716479B2 (ja) プラズマ処理方法
JP7498369B2 (ja) プラズマ処理方法
CN121548874A (zh) 使用直流偏置的可调谐图案化表面均匀性

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230609

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231023

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240625

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240708

R150 Certificate of patent or registration of utility model

Ref document number: 7519549

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150