JPWO2024023877A5 - - Google Patents
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- JPWO2024023877A5 JPWO2024023877A5 JP2023535334A JP2023535334A JPWO2024023877A5 JP WO2024023877 A5 JPWO2024023877 A5 JP WO2024023877A5 JP 2023535334 A JP2023535334 A JP 2023535334A JP 2023535334 A JP2023535334 A JP 2023535334A JP WO2024023877 A5 JPWO2024023877 A5 JP WO2024023877A5
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- frequency
- duty ratio
- power
- plasma generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/028584 WO2024023877A1 (ja) | 2022-07-25 | 2022-07-25 | プラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024023877A1 JPWO2024023877A1 (https=) | 2024-02-01 |
| JPWO2024023877A5 true JPWO2024023877A5 (https=) | 2024-07-03 |
| JP7519549B2 JP7519549B2 (ja) | 2024-07-19 |
Family
ID=89705732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023535334A Active JP7519549B2 (ja) | 2022-07-25 | 2022-07-25 | プラズマ処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250149294A1 (https=) |
| JP (1) | JP7519549B2 (https=) |
| KR (1) | KR102916926B1 (https=) |
| CN (1) | CN117769757A (https=) |
| TW (1) | TWI869908B (https=) |
| WO (1) | WO2024023877A1 (https=) |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2764575B2 (ja) | 1996-08-05 | 1998-06-11 | 名古屋大学長 | ラジカルの制御方法 |
| TW388953B (en) * | 1998-04-13 | 2000-05-01 | Taiwan Semiconductor Mfg | Method of monitoring the shallow trench etching process |
| DE102004020834B4 (de) * | 2004-04-28 | 2010-07-15 | Qimonda Ag | Herstellungsverfahren für eine Halbleiterstruktur |
| JP4877747B2 (ja) * | 2006-03-23 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| JP2010021442A (ja) | 2008-07-11 | 2010-01-28 | Ulvac Japan Ltd | プラズマ処理方法及びプラズマ処理装置 |
| JP2010118549A (ja) * | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
| US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
| US8969210B2 (en) * | 2010-09-15 | 2015-03-03 | Tokyo Electron Limited | Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method |
| JP5718124B2 (ja) * | 2011-03-30 | 2015-05-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| JP2013131587A (ja) * | 2011-12-21 | 2013-07-04 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| JP5792613B2 (ja) | 2011-12-28 | 2015-10-14 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| JP6002556B2 (ja) * | 2012-11-27 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6035606B2 (ja) * | 2013-04-09 | 2016-11-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| JP6095528B2 (ja) * | 2013-09-04 | 2017-03-15 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US9269587B2 (en) | 2013-09-06 | 2016-02-23 | Applied Materials, Inc. | Methods for etching materials using synchronized RF pulses |
| JP6670692B2 (ja) * | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| WO2019099870A1 (en) * | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Synchronized pulsing of plasma processing source and substrate bias |
| US12230475B2 (en) * | 2018-08-14 | 2025-02-18 | Tokyo Electron Limited | Systems and methods of control for plasma processing |
| CN112534544B (zh) * | 2018-08-30 | 2025-02-11 | 东京毅力科创株式会社 | 控制等离子体加工的系统和方法 |
| WO2020121540A1 (ja) * | 2019-02-04 | 2020-06-18 | 株式会社日立ハイテク | プラズマ処理方法及びプラズマ処理装置 |
| WO2020100338A1 (ja) * | 2019-06-21 | 2020-05-22 | 株式会社日立ハイテク | プラズマ処理方法 |
| US11915910B2 (en) * | 2021-03-25 | 2024-02-27 | Tokyo Electron Limited | Fast neutral generation for plasma processing |
-
2022
- 2022-07-25 JP JP2023535334A patent/JP7519549B2/ja active Active
- 2022-07-25 WO PCT/JP2022/028584 patent/WO2024023877A1/ja not_active Ceased
- 2022-07-25 US US18/282,183 patent/US20250149294A1/en active Pending
- 2022-07-25 KR KR1020237021297A patent/KR102916926B1/ko active Active
- 2022-07-25 CN CN202280008603.9A patent/CN117769757A/zh active Pending
-
2023
- 2023-06-30 TW TW112124487A patent/TWI869908B/zh active
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