CN1171296C - 不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线 - Google Patents

不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线 Download PDF

Info

Publication number
CN1171296C
CN1171296C CNB008045658A CN00804565A CN1171296C CN 1171296 C CN1171296 C CN 1171296C CN B008045658 A CNB008045658 A CN B008045658A CN 00804565 A CN00804565 A CN 00804565A CN 1171296 C CN1171296 C CN 1171296C
Authority
CN
China
Prior art keywords
substrate
discontented
packing material
integrated circuit
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008045658A
Other languages
English (en)
Chinese (zh)
Other versions
CN1344424A (zh
Inventor
D
D·库克
���������ּ�ķ
S·拉马林加姆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of CN1344424A publication Critical patent/CN1344424A/zh
Application granted granted Critical
Publication of CN1171296C publication Critical patent/CN1171296C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CNB008045658A 1999-03-03 2000-02-08 不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线 Expired - Fee Related CN1171296C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/262,132 US6528345B1 (en) 1999-03-03 1999-03-03 Process line for underfilling a controlled collapse
US09/262,132 1999-03-03

Publications (2)

Publication Number Publication Date
CN1344424A CN1344424A (zh) 2002-04-10
CN1171296C true CN1171296C (zh) 2004-10-13

Family

ID=22996282

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008045658A Expired - Fee Related CN1171296C (zh) 1999-03-03 2000-02-08 不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线

Country Status (7)

Country Link
US (1) US6528345B1 (enExample)
JP (1) JP2002538624A (enExample)
KR (1) KR100438991B1 (enExample)
CN (1) CN1171296C (enExample)
AU (1) AU2986100A (enExample)
MX (1) MXPA01008581A (enExample)
WO (1) WO2000052751A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833629B2 (en) 2001-12-14 2004-12-21 National Starch And Chemical Investment Holding Corporation Dual cure B-stageable underfill for wafer level
US7238550B2 (en) * 2002-02-26 2007-07-03 Tandon Group Ltd. Methods and apparatus for fabricating Chip-on-Board modules
US6798806B1 (en) * 2002-09-03 2004-09-28 Finisar Corporation Hybrid mirror VCSELs
US7242097B2 (en) 2003-06-30 2007-07-10 Intel Corporation Electromigration barrier layers for solder joints
US7026376B2 (en) * 2003-06-30 2006-04-11 Intel Corporation Fluxing agent for underfill materials
US20050121310A1 (en) * 2003-12-03 2005-06-09 Intel Corporation Method and substrate to control flow of underfill
JP5262045B2 (ja) * 2007-09-27 2013-08-14 富士通セミコンダクター株式会社 電極の形成方法及び半導体装置の製造方法
US7915732B2 (en) * 2008-06-30 2011-03-29 International Business Mahines Corporation Production of integrated circuit chip packages prohibiting formation of micro solder balls

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322737A (en) 1979-11-20 1982-03-30 Intel Corporation Integrated circuit micropackaging
JPS63239827A (ja) 1987-03-27 1988-10-05 Hitachi Ltd 半導体装置
EP0340492A3 (en) * 1988-05-02 1990-07-04 International Business Machines Corporation Conformal sealing and interplanar encapsulation of electronic device structures
JPH0256941A (ja) 1988-08-20 1990-02-26 Matsushita Electric Works Ltd 半導体素子の封止方法
JPH0340458A (ja) 1989-07-07 1991-02-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH0639563B2 (ja) 1989-12-15 1994-05-25 株式会社日立製作所 半導体装置の製法
US5371325A (en) 1992-10-30 1994-12-06 At&T Corp. Insulation system for magnetic devices
US5321583A (en) 1992-12-02 1994-06-14 Intel Corporation Electrically conductive interposer and array package concept for interconnecting to a circuit board
US5371328A (en) 1993-08-20 1994-12-06 International Business Machines Corporation Component rework
JP2774436B2 (ja) 1993-09-07 1998-07-09 リンナイ株式会社 多孔質体
US5539153A (en) 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
JP3233535B2 (ja) 1994-08-15 2001-11-26 株式会社東芝 半導体装置及びその製造方法
JPH08153830A (ja) 1994-11-29 1996-06-11 Toshiba Corp 半導体装置およびその製造方法
US5864178A (en) 1995-01-12 1999-01-26 Kabushiki Kaisha Toshiba Semiconductor device with improved encapsulating resin
US5811317A (en) 1995-08-25 1998-09-22 Texas Instruments Incorporated Process for reflow bonding a semiconductor die to a substrate and the product produced by the product
EP0778616A3 (en) 1995-12-05 1999-03-31 Lucent Technologies Inc. Method of packaging devices with a gel medium confined by a rim member
US5766982A (en) 1996-03-07 1998-06-16 Micron Technology, Inc. Method and apparatus for underfill of bumped or raised die
US5751556A (en) 1996-03-29 1998-05-12 Intel Corporation Method and apparatus for reducing warpage of an assembly substrate
JP3235454B2 (ja) 1996-03-29 2001-12-04 松下電器産業株式会社 電子部品の接合方法
US5821456A (en) 1996-05-01 1998-10-13 Motorola, Inc. Microelectronic assembly including a decomposable encapsulant, and method for forming and reworking same
JP2891184B2 (ja) * 1996-06-13 1999-05-17 日本電気株式会社 半導体装置及びその製造方法
JPH1055832A (ja) 1996-08-08 1998-02-24 Yazaki Corp 圧接端子
US5804771A (en) 1996-09-26 1998-09-08 Intel Corporation Organic substrate (PCB) slip plane "stress deflector" for flip chip deivces
JP2848357B2 (ja) 1996-10-02 1999-01-20 日本電気株式会社 半導体装置の実装方法およびその実装構造
US5942805A (en) 1996-12-20 1999-08-24 Intel Corporation Fiducial for aligning an integrated circuit die
US5891753A (en) 1997-01-24 1999-04-06 Micron Technology, Inc. Method and apparatus for packaging flip chip bare die on printed circuit boards
US5990552A (en) 1997-02-07 1999-11-23 Intel Corporation Apparatus for attaching a heat sink to the back side of a flip chip package
US5815372A (en) 1997-03-25 1998-09-29 Intel Corporation Packaging multiple dies on a ball grid array substrate
US6104093A (en) 1997-04-24 2000-08-15 International Business Machines Corporation Thermally enhanced and mechanically balanced flip chip package and method of forming
JPH1154884A (ja) 1997-08-06 1999-02-26 Nec Corp 半導体装置の実装構造
US5919329A (en) 1997-10-14 1999-07-06 Gore Enterprise Holdings, Inc. Method for assembling an integrated circuit chip package having at least one semiconductor device
US6049122A (en) 1997-10-16 2000-04-11 Fujitsu Limited Flip chip mounting substrate with resin filled between substrate and semiconductor chip
US5998242A (en) 1997-10-27 1999-12-07 Lsi Logic Corporation Vacuum assisted underfill process and apparatus for semiconductor package fabrication
US5917702A (en) 1997-11-26 1999-06-29 Intel Corporation Corner heat sink which encloses an integrated circuit of a ball grid array integrated circuit package
US6049124A (en) 1997-12-10 2000-04-11 Intel Corporation Semiconductor package
US5936304A (en) 1997-12-10 1999-08-10 Intel Corporation C4 package die backside coating
US5965937A (en) 1997-12-15 1999-10-12 Intel Corporation Thermal interface attach mechanism for electrical packages
US5920120A (en) 1997-12-19 1999-07-06 Intel Corporation Assembly for dissipatating heat from a semiconductor chip wherein a stress on the semiconductor chip due to a thermally conductive member is partially relieved
US5991161A (en) 1997-12-19 1999-11-23 Intel Corporation Multi-chip land grid array carrier
US6201301B1 (en) 1998-01-21 2001-03-13 Lsi Logic Corporation Low cost thermally enhanced flip chip BGA
US5953814A (en) * 1998-02-27 1999-09-21 Delco Electronics Corp. Process for producing flip chip circuit board assembly exhibiting enhanced reliability
US6057381A (en) * 1998-07-02 2000-05-02 National Starch And Chemical Investment Holding Corporation Method of making an electronic component using reworkable underfill encapsulants
US6238948B1 (en) 1999-03-03 2001-05-29 Intel Corporation Controlled collapse chip connection (C4) integrated circuit package that has a fillet which seals an underfill material

Also Published As

Publication number Publication date
AU2986100A (en) 2000-09-21
KR20020005612A (ko) 2002-01-17
MXPA01008581A (es) 2002-04-24
JP2002538624A (ja) 2002-11-12
WO2000052751A1 (en) 2000-09-08
CN1344424A (zh) 2002-04-10
US6528345B1 (en) 2003-03-04
KR100438991B1 (ko) 2004-07-02

Similar Documents

Publication Publication Date Title
US6610559B2 (en) Integrated void-free process for assembling a solder bumped chip
CN1165979C (zh) 集成电路封装方法
US7736950B2 (en) Flip chip interconnection
US20110287582A1 (en) Method of forming a semiconductor device
JPH08340064A (ja) 再加工可能な電子デバイス及び形成方法
CN1191627C (zh) 具有二种不同的底层填充材料的可控崩塌芯片连接(c4)集成电路封装件
TW201426928A (zh) 具有在封裝間之電絕緣材料之層疊封裝（ＰｏＰ）
CN1157782C (zh) 利用加热到部分凝胶态的底层填料底层填充控制熔塌芯片连接(c4)集成电路封装的方法
CN1171296C (zh) 不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线
JP2002270642A (ja) 半導体装置の製造方法
JP2004282042A (ja) 半導体デバイスのアセンブリ法
TWI478257B (zh) 封裝結構及封裝製程
JP3309832B2 (ja) 電子部品の接続構造及び接続方法
JPH1098077A (ja) 半導体装置の製造方法
CN101996974B (zh) 球栅阵列印刷电路板、其封装结构及其工艺
CN101989554B (zh) 封装结构及封装工艺
KR100498675B1 (ko) 두 가지 다른 하부 충전 재료를 갖는 붕괴 제어형 칩접속(ｃ4) 집적회로 패키지
CN104347547A (zh) 半导体封装件及其的制造方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20041013

Termination date: 20150208

EXPY Termination of patent right or utility model