CN1344424A - 不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线 - Google Patents
不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线 Download PDFInfo
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Abstract
一种不满填充安装在基底上的集成电路的高吞吐量生产流水线和方法。生产流水线包括一个将单一不满填充材料发放到基底上的第一发放站和一个烘箱,烘箱在不满填充材料在集成电路和基底之间流动期间移动基底。生产流水线消除了作为获得高吞吐量瓶颈的流动时间(毛细作用时间)。
Description
发明背景
1.发明领域
本发明涉及一种集成电路封装。
2.背景信息
集成电路典型是装入焊接在印刷电路板上的封装之中。图1给出了一种通常称为倒焊法或C4封装的集成电路封装。集成电路1包含很多焊在基底3上表面上的焊接突起2。
基底3典型是由复合材料构成,其热膨胀系数与集成电路的热膨胀系数不同。封装温度的任何变化都会引起集成电路1和基底3之间的不均匀膨胀。不均匀膨胀会产生可能使焊接突起破裂的压力。焊接突起2在集成电路1和基底3之间传导电流,因此焊接突起2中的任何裂痕都会影响电路1的运行。
封装包括位于集成电路1和基底3之间的不满填充材料4。不满填充材料4典型是环氧,它加强了IC封装焊点的可靠性和热机械水分稳定性。
封装可以包括数百个焊接突起2,排列成二维阵列穿过集成电路1的底部。环氧4典型是通过沿着集成电路的一边发放单行未固化环氧材料而用在焊接突起接触面的。然后环氧在焊接突起之间流动。环氧4必须以覆盖所有焊接突起2的方式发放。
最好是只在集成电路的一面发放环氧4以确保在不满填充中不形成气孔。气孔减弱了集成电路/基底接触面的结构完整性。另外,不满填充材料4与基底3和集成电路1两者必须具有良好的粘合强度以防止在热填充和水分填充期间分层。因此环氧4必须是以这样一种状态提供的材料,它能够在整个集成电路/基底接触面下流动,同时具有良好的粘性。
基底3典型由陶瓷材料构成。陶瓷材料大量制造相对要比较昂贵。因此想要为C4封装提供一种有机基底。有机基底会吸收不满填充过程中释放出的水分。不满填充过程中释放出的水分会在不满填充材料中产生砂眼。与陶瓷基底相比,有机基底还具有较高的热膨胀系数,会在管芯、不满填充材料和焊接突起中产生较高的压力。环氧中较高的压力会在热填充期间产生延伸到基底之中的裂痕,并使金属痕迹破裂而导致封装失败。在热填充期间较高的压力还会导致管芯失败,增加对气孔和水泡的灵敏度。突起在热填充期间可能会挤压出砂眼,特别是对于具有相对较高突起密度的封装。我们要做的事是提供一种使用有机基底的C4封装。
发明简述
本发明的一个实施方案是不满填充安装在基底上的集成电路的生产流水线。流水线包括将第一不满填充材料发放到基底上的第一发放站和一个烘箱,它在不满填充材料在集成电路和基底之间流动期间移动基底。
附图简述
图1是现有技术的集成电路封装侧视图;
图2是本发明集成电路封装的一个实施方案顶视图;
图3是放大的集成电路封装侧视图。
图4是一个示意图,显示了装配集成电路封装的方法。
发明详述
参考附图,尤其是参考标号,图2和图3给出了本发明集成电路封装10的一个实施方案。封装10包括基底12,基底包括第一表面14和与其相对的第二表面16。集成电路18可以通过多个焊接突起20连接到基底12的第一表面14。焊接突起20排列成二维阵列穿过集成电路18。焊接突起20可以使用通常称为受控折叠芯片连接(C4)的方法连接到集成电路18和基底12。
焊接突起20传导集成电路18和基底12之间的电流。基底12的一个实施方案包括一种有机绝缘材料。封装10有很多焊接球,连接到基底12的第二表面16。焊接球22可以回流以将封装10连接到印刷电路板(没有给出)。
基底12可以包括路线痕迹、电源/地平面、通路等等,将第一表面14的焊接突起20电连接到第二表面16上的焊接球。集成电路18可以由密封材料密封起来(没有给出)。另外,封装10可以加上一个热铁芯或热槽之类的热元件(没有给出)来去除集成电路18产生的热量。
封装10包括连接到集成电路18和基底12的第一不满填充材料24。封装10还包括连接基底12和集成电路18的第二不满填充材料26。第二不满填充材料26形成一个环带,环绕和密封IC和第一不满填充材料24的边缘。第二材料26的密封功能会防止水分移动、集成电路破裂和第一不满填充材料的裂缝。
第一不满填充材料24可以是日本Shin-Itsu生产的、产品标号为Semicoat5230-JP的环氧。Semicoat5230-JP材料提供了良好的流动性和粘性。第二不满填充材料26可以是日本Shin-Itsu生产的、产品标号为Semicoat122X的酸酐环氧。Semicoat122X材料的粘性低于Semicoat5230-JP,但抗断裂/破裂要好得多。
图4给出了一个装配封装10的方法。基底12一开始要在步骤1中在烘箱里烘烤以去掉基底材料中的水分。基底12烘烤温度最好要高于余下不满填充处理步骤的处理温度,确保在随后的步骤中基底12不会释放出水分。举例来说,基底12可以在163℃上烘烤。
在烘烤过程之后,集成电路18被安装在基地12上。集成电路18典型是通过回流焊接突起20来安装。
在第一发放站30中,第一不满填充材料24沿着集成电路的一边发放到基底12上。第一不满填充材料24在毛细作用下于集成电路18和基底12之间流动。举例来说,第一不满填充材料24可以在110~120℃的温度下发放。完全填充集成电路18和基底12之间的空隙要经过一系列发放的步骤。
封装10要自始至终在烘炉32中移动以完成第一不满填充材料24的完全流动和部分胶凝。举例来说,在烘箱32里要将不满填充材料24加热到120~145℃的温度才能使其部分胶凝。部分胶凝会减少砂眼形成,增强集成电路18和不满填充材料24之间的黏连。黏连的增强会减少水分移动、不满填充材料24和IC18之间的分层以及不满填充材料24和基底12之间的分层。砂眼形成减少了会降低热填充期间突起挤出的可能性。在毛细处理期间,封装要自始至终在加热不满填充材料的烘箱中不停的移动。在毛细处理期间不停移动基底12降低了不满填充集成电路所需的时间,从而减少了生产封装的成本。基底可以在传送带(没有给出)上在发放站30和34之间移动,并穿过烘箱32。
在第二发放站34,第二不满填充材料26沿着集成电路18的所有四个边发放到基底上。第二不满填充材料26以生成一个环绕并密封第一材料24的填充带的方式来发放。举例来说,第二材料26在大约80~120℃的温度下发放。
第一不满填充材料24和第二不满填充材料26会固化为坚硬的状态。材料在大约150℃的温度下固化。在不满填充材料24和26固化之后,焊接球22被加在基底12的第二表面16上。
虽然已经讲述并在附图中给出了具有一定代表性的实施方案,但这可理解为这样的实施方案只是示意性的,不是对概括性的发明加以限制,本发明不只限于给出的和讲述的特定结构与排列,所以那些普通的技术人员可以进行其它不同的修改。
Claims (18)
1.一种不满填充安装在基底上的集成电路的生产流水线,包括:
第一发放站,可以将第一不满填充材料发放到基底上;以及
一个加热第一不满填充材料的烘箱,该烘箱在第一不满填充材料在集成电路和基底之间流动时移动该基底。
2.如权利要求1所述的生产流水线,还包括将第二不满填充材料发放到基底上的第二发放站。
3.如权利要求1所述的生产流水线,其中第二不满填充材料密封第一不满填充材料。
4.如权利要求1所述的生产流水线,其中第一不满填充材料是环氧的。
5.如权利要求4所述的生产流水线,其中第二不满填充材料是酸酐环氧。
6.如权利要求1所述的生产流水线,其中烘箱将第一不满填充材料加热到部分胶凝状态。
7.一种不满填充安装到基底上的集成电路的方法,包括:
将第一不满填充材料发放到基底上;以及
加热第一不满填充材料,同时移动基底穿过烘箱。
8.如权利要求7所述的方法,其中第一不满填充材料在集成电路和基底之间流动。
9.如权利要求8所述的方法,还包括环绕第一不满填充材料发放第二不满填充材料的步骤。
10.如权利要求7所述的方法,还包括在发放第一不满填充材料之前加热基底的步骤。
11.如权利要求10所述的方法,其中加热基底的温度要高于第一不满填充材料移过烘箱的温度。
12.如权利要求7所述的方法,还包括使用焊接突起将集成电路安装到基底上的步骤。
13.如权利要求12所述的方法,还包括将焊接球加在基底上的步骤。
14.一个不满填充安装在基底上的集成电路的方法,包括:
将第一不满填充材料发放到基底上;以及
在第一不满填充材料在集成电路和基底之间流动期间移动基底。
15.如权利要求14所述的方法,还包括环绕第一不满填充材料发放第二不满填充材料的步骤。
16.如权利要求14所述的方法,还包括在第一不满填充材料发放之前加热基底的步骤。
17.如权利要求14所述的方法,还包括使用焊接突起将集成电路安装在基底上的步骤。
18.如权利要求17所述的方法,还包括将焊接球附到基底上的步骤。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/262,132 | 1999-03-03 | ||
US09/262,132 US6528345B1 (en) | 1999-03-03 | 1999-03-03 | Process line for underfilling a controlled collapse |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1344424A true CN1344424A (zh) | 2002-04-10 |
CN1171296C CN1171296C (zh) | 2004-10-13 |
Family
ID=22996282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008045658A Expired - Fee Related CN1171296C (zh) | 1999-03-03 | 2000-02-08 | 不满填充受控折叠芯片连接(c4)集成电路封装的生产流水线 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6528345B1 (zh) |
JP (1) | JP2002538624A (zh) |
KR (1) | KR100438991B1 (zh) |
CN (1) | CN1171296C (zh) |
AU (1) | AU2986100A (zh) |
MX (1) | MXPA01008581A (zh) |
WO (1) | WO2000052751A1 (zh) |
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-
1999
- 1999-03-03 US US09/262,132 patent/US6528345B1/en not_active Expired - Fee Related
-
2000
- 2000-02-08 WO PCT/US2000/003243 patent/WO2000052751A1/en active IP Right Grant
- 2000-02-08 AU AU29861/00A patent/AU2986100A/en not_active Abandoned
- 2000-02-08 MX MXPA01008581A patent/MXPA01008581A/es not_active IP Right Cessation
- 2000-02-08 JP JP2000603088A patent/JP2002538624A/ja active Pending
- 2000-02-08 CN CNB008045658A patent/CN1171296C/zh not_active Expired - Fee Related
- 2000-02-08 KR KR10-2001-7011229A patent/KR100438991B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6528345B1 (en) | 2003-03-04 |
CN1171296C (zh) | 2004-10-13 |
KR100438991B1 (ko) | 2004-07-02 |
WO2000052751A1 (en) | 2000-09-08 |
KR20020005612A (ko) | 2002-01-17 |
AU2986100A (en) | 2000-09-21 |
JP2002538624A (ja) | 2002-11-12 |
MXPA01008581A (es) | 2002-04-24 |
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