CN1157782C - 利用加热到部分凝胶态的底层填料底层填充控制熔塌芯片连接(c4)集成电路封装的方法 - Google Patents

利用加热到部分凝胶态的底层填料底层填充控制熔塌芯片连接(c4)集成电路封装的方法 Download PDF

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CN1157782C
CN1157782C CNB008071217A CN00807121A CN1157782C CN 1157782 C CN1157782 C CN 1157782C CN B008071217 A CNB008071217 A CN B008071217A CN 00807121 A CN00807121 A CN 00807121A CN 1157782 C CN1157782 C CN 1157782C
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D・库克
D·库克
利
V·穆拉利
砹旨幽
S·拉马林加姆
吕哈利
N·沃德拉哈利
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Abstract

在安装到基板上的集成电路的底层填充中的部分凝胶步骤。该工艺步骤包括分散第一底层填料，然后将该底层材料加热到部分凝胶态。部分凝胶步骤可以减少空洞的形成，改善水汽负载期间的粘附性能。

Description

利用加热到部分凝胶态的底层填料底层填充 控制熔塌芯片连接(C4)集成电路封装的方法
1.发明的背景
本发明涉及一种集成电路封装
2.背景信息
集成电路一般被组装到将焊接到印刷电路板上的封装中。图1示出了一种一般称为倒装芯片或C4封装的集成电路封装。集成电路1含有数个将焊接到基板3的上表面上的焊料凸点2。
基板3一般由热膨胀系数与集成电路不同的复合材料构成。封装温度的任何变化，都会引起集成电路1和基板3的不同膨胀。不同的膨胀会产生可能造成焊料凸点2龟裂的应力。该焊料凸点2运载集成电路1和基板3间的电流，所以凸点2的任何龟裂都会影响电路1的工作。
封装可以包括位于集成电路1和基板3间的底层填料4。该底层填料4一般是加强焊点可靠性和IC封装的热机械水汽稳定性的环氧树脂。
封装可以具有按两维阵列形式排列在集成电路1的底面上的数百焊料凸点2。环氧树脂4一般通过沿集成电路的一侧分散一条未固化环氧树脂材料线，加于焊料凸点界面上。然后，环氧树脂流到焊料凸点之间。环氧树脂4必须按能覆盖所有焊料凸点2的形式分散。
希望环氧树脂4仅在集成电路的一侧分散，以确保不在底层填料中形成气穴。气穴会减弱集成电路/基板界面的结构完整性。此外，底层填料4必须与基板3和集成电路1具有良好的粘附强度，以防止热和水汽负载期间的剥离。因此，环氧树脂4必须是处于可以在整个集成电路/基板界面之下流动的状态，同时具有良好的粘附特性的材料。
基板3一般由陶瓷材料构成。陶瓷材料对于批量生产来说较贵。因此，希望提供用于C4封装的有机基板。有机基板容易吸收会在底层填充过程中释放出来的水汽。底层填充工艺期间释放的水汽会在底层填料中产生空洞。有机基板还容易具有较陶瓷基板高的热膨胀系数，这样会在管芯、底层填料和焊料凸点中形成较大应力。环氧树脂中的较大应力会导致热负载期间发生龟裂，该龟裂会延伸到基板中，并会由于使金属线条断裂而造成封装失效。较大应力还会导致热负载期间管芯失效，并且提高对空气和水汽空洞的敏感性。尤其是对于具有较高凸点密度的封装来说，热负载期间，凸点会伸到空洞内。所以，希望提供一种能够利用有机基板的C4封装。
发明的概述
本发明的一个实施例是可以包括安装在基板上的集成电路的集成电路封装。该封装可以包括附着于集成电路和基板上的底层填料和密封底层填料的嵌条。
附图简介
图1是现有技术集成电路封装的侧视图；
图2是本发明的集成电路封装一个实施例的俯视图；
图3是该集成电路封装的放大侧视图；
图4是展示组装该集成电路封装的方法的示图。
发明的详细描述
利用参考数字更具体地参照各附图，图2和3示出了本发明的集成电路封装10的实施例。封装10可以包括具有第一表面14和第二相反表面16的基板12。集成电路18可以通过多个焊料凸点20附着于基板12的第一表面14上。焊料凸点20可以按两维阵列的方式排列于集成电路18上。可以利用一般称作控制熔塌芯片连接(C4)的方法，将焊料凸点20附着于集成电路18上和基板12上。
焊料凸点20可以在集成电路18和基板12之间运载电流。在一个实施例中，基板12可以包括有机介电材料。封装10可以包括多个附着到基板12的第二表面16的焊料球22。焊料球22可以回流，使封装10附着到印刷电路板(未示出)上。
基板12可以含有布线条、电源/接地面、通道等，它们将第一表面14上的焊料凸点20电连接到第二表面16上的焊料球22。集成电路18可以通过密封剂(未示出)密封。此外，封装10可以引入例如金属散热片或热沉等热元件(未示出)，用于散发集成电路18产生的热。
封装10可以包括附着于集成电路18和基板12上的第一底层填料24。封装10还可以包括附着到基板12和集成电路18上的第二底层填料26。第二底层填料26可以形成包围和密封IC的边缘和第一底层填料24的环形嵌条。第二材料26的密封作用可以防止水汽迁移、集成电路和第一底层填料龟裂。
第一底层填料24可以是产品名称为Semicoat 5230-JP由日本的Shin-Itsu制造的环氧树脂。Semicoat 5230-JP材料具有优异的流动性和粘附性。第二底层填料26可以是产品名称为Semicoat 122X由Shin-Itsu制造的酸酐环氧树脂(anhydride epoxy)。Semicoat122X材料的粘附性低于Semicoat 5230-JP，但更耐疲劳/龟裂。
图4示出了组装封装10的方法。首先，可以在烘箱28中烘焙基板12，去除基板材料中的水汽。较好是在高于其余底层填充工艺步骤的工艺温度的温度下烘焙基板12，以确保在随后的步骤中不会释放水汽。例如，可以在163℃的温度下烘焙基板12。
烘焙工艺后，可以将集成电路18安装到基板12上。一般通过回流焊料凸点20安装集成电路18。
可以在第一分散台30，沿集成电路18的一侧在基板12上分散第一底层填料24。第一底层填料24可以在灯芯作用下在集成电路18和基板12间流动。例如，可以在110-120℃的温度下，分散第一底层填料24。可以有一系列分散步骤，以充分填充集成电路18和基板12间的空间。
然后，可以通过烘箱32移动封装10，完成第一底层填充材料24的流动和部分凝胶化。例如，可以在烘箱32中，将该底层填料24加热到120-145℃的温度，以便使底层填料24部分凝胶化。部分凝胶化可以减少空洞的形成，改善集成电路18和底层填料24间的粘附性。粘附性的改善可以减少水汽的迁移和底层填料24与IC 18间的剥离，以及底层填料24与基板的剥离。空洞形成的减少可以减少热负载期间凸点的伸出。可以在灯芯作用期间通过加热底层填料的烘箱32连续移动封装。在灯芯作用期间连续移动基板12，可以减少底层填充集成电路需要的时间，所以可以降低制造封装的成本。基板12可以在传送带(未示出)上通过烘箱在工作台30和34间移动。
可以在第二分散台34，沿集成电路18的四侧，在基板12上分散第二底层填充材料26。第二材料26可以按形成包封和密封第一材料24的嵌条的方式分散。例如，可以在约80-120℃的温度下，分散第二底层填料26。
第一和第二底层填充材料24和26可以固化为硬化状态。材料的固化可以在约150℃的温度下进行。底层填料24和26固化后，可以将焊料球22附着到基板12的第二表面16上。
尽管结合附图介绍和展示了特定的例示实施例，但应理解，这些实施例仅仅是例示，并非对该宽范围发明的限制，由于对所属领域的普通技术人员来说，可以产生各种其它改进，所以本发明不限于所展示和介绍的特定结构和设置。

Claims (29)

1.一种底层填充安装到基板上的集成电路的方法，包括以下步骤：
在集成电路和基板间，分散被加热到第一温度的第一底层填料；及
分散了第一底层填料后，将第一底层填料加热到高于第一温度的第二温度，以得到部分凝胶状态。
2.根据权利要求1的方法，还包括将附着于集成电路和基板上的第二底层填料分散。
3.根据权利要求2的方法，其中第二底层填料按包围第一底层填料的方式分散。
4.根据权利要求2的方法，其中第一底层填料是环氧树脂，第二底层填料是酸酐环氧树脂。
5.根据权利要求2的方法，其中第二底层填料被加热到第四温度，该第四温度低于所述第二温度。
6.根据权利要求2的方法，还包括分散了加热到第一温度的第一底层填料后，将第一底层填料加热到第二温度，以得到部分凝胶态，然后分散第二底层填料，
将第一和第二底层填料加热到高于第一和第二温度的第五温度，以便固化第一和第二底层填料。
7.根据权利要求1的方法，其中第一底层填料在集成电路和基板间流动。
8.根据权利要求1的方法，还包括在集成电路和基板间分散被加热到第一温度的第一底层填料前，将基板加热到高于第一和第二温度的第三温度。
9.根据权利要求8的方法，其中第一温度在第一温度范围内，第二温度在大于第一温度范围的第二温度范围内，第三温度在大于第一和第二温度范围的第三温度范围内。
10.根据权利要求1的方法，还包括利用焊料凸点将集成电路安装于基板上。
11.根据权利要求10的方法，还包括在基板上附着焊料球。
12.根据权利要求1的方法，其中分散被加热到第一温度的第一底层填料包括：
将集成电路和基板设置于烘箱中，及
连续移动集成电路和基板，以减少第一底层填料在灯芯作用下在其间流动需要的时间。
13.一种在集成电路封装的组装期间底层填充集成电路的方法，包括以下步骤：
在第一温度烘焙基板；
在所说基板上安装集成电路；
分散加热到低于第一温度的第二温度的第一底层填料，第一底层填料附着到集成电路和基板上；及
将所说第一底层填料加热到第三温度，以便使所说第一底层填料部分凝胶化，其中所说第一温度高于所说第二温度和所说第三温度。
14.根据权利要求13的方法，还包括分散第二底层填料，第二底层填料附着到集成电路和基板上。
15.根据权利要求14的方法，其中第一底层填料是环氧树脂，第二底层填料是酸酐环氧树脂。
16.根据权利要求14的方法，还包括分散了第一和第二底层填料后，
将第一和第二底层填料加热到高于第二和第三温度的第五温度，以便固化第一和第二底层填料。
17.根据权利要求13的方法，其中将集成电路安装到基板上采用了焊料凸点。
18.根据权利要求17的方法，还包括将焊料球附着到基板上。
19.根据权利要求13的方法，其中集成电路封装是控制熔塌芯片连接集成电路封装。
20.一种在集成电路封装的组装期间底层填充集成电路的方法，包括以下步骤：
在第一温度下烘焙基板；
在该基板上安装集成电路；
分散加热到低于第一温度的第二温度的第一底层填料，该第一底层填料附着到集成电路和基板上；及
将所说第一底层填料加热到高于第二温度且低于第一温度的第三温度，以便在所说第一底层填料中得到部分凝胶态；及
分散第二底层填料，第二底层填料附着到集成电路和基板上。
21.根据权利要求20的方法，其中将集成电路安装到基板上采用一个或多个焊料凸点。
22.根据权利要求21的方法，还包括在基板上附着一个或多个焊料球。
23.根据权利要求20的方法，其中第一底层填料是环氧树脂，第二底层填料是酸酐环氧树脂。
24.根据权利要求20的方法，还包括分散第一和第二底层填料后，将第一和第二底层填料加热到高于第二和第三温度的第五温度，以便固化第一和第二底层填料。
25.根据权利要求20的方法，其中集成电路封装是控制熔塌芯片连接集成电路封装。
26 一种减少空洞形成和改善集成电路封装工艺中的粘附性的方法，该方法包括：
第一次加热，将基板加热到高于工艺中所有随后加热步骤的温度的温度，以去除基板中的水汽，避免随后加热步骤中释放水汽；
将集成电路安装到基板上，形成子组件；
第一次分散，将第一底层填料分散到集成电路和基板间的间隙中；
第二次加热，将第一底层填料加热到低于第一加热温度的温度，使之在灯芯作用下，在集成电路和基板间的间隙中流动，第一底层填料附着于集成电路和基板上；
第三次加热，将包括第一底层填料的子组件加热到高于第二加热温度的温度，以使第一底层填料部分凝胶化成凝胶态，从而减少空洞的形成，改善第一底层材料与集成电路的粘附性；
第二次分散，沿集成电路的各侧边，将第二底层填料分散到基板上；
第四次加热，将第二底层填料加热到低于第一加热温度的温度，以便第二底层填料围绕第一底层填料流动；及
第五次加热，将包括第一和第二底层填料的子组件加热到低于第一加热温度但高于第二、第三和第四加热温度的温度，以固化第一和第二底层填料。
27.根据权利要求26的方法，其中第四次加热使第二底层填料围绕第一底层填料流动，形成嵌条，包封和密封第一底层填料。
28.根据权利要求26的方法，其中基板是控制熔塌芯片连接集成电路封装的一部分。
29.根据权利要求26的方法，其中第一底层填料是环氧树脂，第二底层填料是酸酐环氧树脂。
CNB008071217A 1999-03-03 2000-02-08 利用加热到部分凝胶态的底层填料底层填充控制熔塌芯片连接(c4)集成电路封装的方法 Expired - Fee Related CN1157782C (zh)

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