CN1165979C - 集成电路封装方法 - Google Patents
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Abstract
一种密封工艺步骤,将填料分散到可以包括安装到衬底上的集成电路的集成电路封装上。该封装可以包括附着到集成电路和衬底上的底部充胶材料及密封所说底部充胶材料及IC的填料。所说填料形成的均匀密封可以防止热机械负载期间集成电路(管芯)龟裂。
Description
发明的背景
1.发明的领域
本发明涉及一种集成电路封装
2.背景信息
集成电路一般被组装到将焊接到印刷电路板上的封装中。图1示出了一种一般称为倒装芯片或C4封装的集成电路封装。集成电路1含有数个将焊接到衬底3的上表面上的焊料凸点2。
衬底3一般由热膨胀系数与集成电路不同的复合材料构成。封装温度的任何变化,都会引起集成电路1和衬底3的不同膨胀。不同的膨胀会产生可能造成焊料凸点2龟裂的应力。该焊料凸点2运载集成电路1和衬底3间的电流,所以凸点2的任何龟裂都会影响电路1的工作。
封装可以包括位于集成电路1和衬底3间的底部充胶材料4。该底部充胶材料4一般是加强焊点可靠性和IC封装的热机械水汽稳定性的环氧树脂。
封装可以具有按两维阵列形式排列在集成电路1的底面上的数百焊料凸点2。环氧树脂4一般通过沿集成电路的一侧分散一条未固化环氧树脂材料线,加于焊料凸点界面上。然后,环氧树脂流到焊料凸点之间。环氧树脂4必须按能覆盖所有焊料凸点2的形式分散。
希望仅在集成电路的一侧分散环氧树脂4,以确保不在底部充胶材料中形成气穴。气穴会减弱集成电路/衬底界面的结构完整性。此外,底部充胶材料4必须与衬底3和集成电路1具有良好的粘附强度,以防止热和水汽负载期间的剥离。因此,环氧树脂4必须是处于可以在整个集成电路/衬底界面之下流动的状态,同时具有良好的粘附特性的材料。
衬底3一般由陶瓷材料构成。陶瓷材料对于批量生产来说较贵。因此,希望提供用于C4封装的有机衬底。有机衬底容易吸收会在底部充胶过程中释放出来的水汽。底部充胶工艺期间释放的水汽会在底部充胶材料中产生空洞。有机衬底还容易具有较陶瓷衬底高的热膨胀系数,这样会在管芯、底部充胶材料和焊料凸点中形成较大应力。环氧树脂中的较大应力会导致热负载期间发生龟裂,该龟裂会延伸到衬底中,并会由于使金属线条断裂而造成封装失效。较大应力还会导致热负载期间管芯失效,并且提高对空气和水汽空洞的敏感性。尤其是对于具有较高凸点密度的封装来说,热负载期间,凸点会伸到空洞内。所以,希望提供一种能够利用有机衬底的C4封装。
发明的概述
本发明的一个实施例是可以包括安装在衬底上的集成电路的集成电路封装。该封装可以包括附着于集成电路和衬底上的底部充胶材料和密封底部充胶材料的填料。
附图简介
图1是现有技术集成电路封装的侧视图;
图2是本发明的集成电路封装一个实施例的俯视图;
图3是该集成电路封装的放大侧视图;
图4是展示组装该集成电路封装的方法的示图。
发明的详细描述
利用参考数字更具体地参照各附图,图2和3示出了本发明的集成电路封装10的实施例。封装10可以包括具有第一表面14和第二相对表面16的衬底12。集成电路18可以通过多个焊料凸点20附着于衬底12的第一表面14上。焊料凸点20可以按两维阵列的方式排列于集成电路18上。可以利用一般称作控制熔塌芯片连接(C4)的方法,将焊料凸点20附着于集成电路18上和衬底12上。
焊料凸点20可以在集成电路18和衬底12之间运载电流。在一个实施例中,衬底12可以包括有机介电材料。封装10可以包括多个附着到衬底12的第二表面16的焊料球22。焊料球22可以回流,使封装10附着到印刷电路板(未示出)上。
衬底12可以含有布线条、电源/接地面、通道等,它们将第一表面14上的焊料凸点20电连接到第二表面16上的焊料球22。集成电路18可以通过密封剂(未示出)密封。此外,封装10可以引入例如金属散热片或热沉等热元件(未示出),用于散发集成电路18产生的热。
封装10可以包括附着于集成电路18和衬底12上的第一底部充胶材料24。封装10还可以包括附着到衬底12和集成电路18上的第二底部充胶材料26。第二底部充胶材料26可以形成包围和密封IC的边缘和第一底部充胶材料24的环形填料。第二材料26的均匀密封作用可以防止水汽迁移、集成电路和第一底部充胶材料龟裂。该密封工艺还可以减少安装有陶瓷衬底的IC的剥离。
第一底部充胶材料24可以是产品名称为Semicoat 5230-JP由日本的Shin-Itsu制造的环氧树脂。Semicoat 5230-JP材料具有优异的流动性和粘附性。第二底部充胶材料26可以是产品名称为Semicoat122X由Shin-Itsu制造的酸酐环氧树脂(anhydride epoxy)。Semicoat122X材料的粘附性低于Semicoat 5230-JP,但更耐疲劳/龟裂。
图4示出了组装封装10的方法。首先,可以在烘箱28中烘焙衬底12,去除衬底材料中的水汽。较好是在高于其余底部充胶工艺步骤的工艺温度的温度下烘焙衬底12,以确保在随后的步骤中不会释放水汽。例如,可以在163℃的温度下烘焙衬底12。
烘焙工艺后,可以将集成电路18安装到衬底12上。一般通过回流焊料凸点20安装集成电路18。
可以在第一分散台30,沿集成电路18的一侧在衬底12上分散第一底部充胶材料24。第一底部充胶材料24可以在灯芯作用下在集成电路18和衬底12间流动。例如,可以在110-120℃的温度下,分散第一底部充胶材料24。可以有一系列分散步骤,以充分填充集成电路18和衬底12间的空间。
然后,可以通过烘箱32移动封装10,完成第一底部充胶材料24的流动和部分凝胶化。例如,可以在烘箱32中,将该底部充胶材料24加热到120-145℃的温度,以便使底部充胶材料24部分凝胶化。部分凝胶化可以减少空洞的形成,改善集成电路18和底部充胶材料24间的粘附性。粘附性的改善可以减少水汽的迁移和底部充胶材料24与IC 18间的剥离,以及底部充胶材料24与衬底12的剥离。空洞形成的减少可以减少热负载期间凸点的伸出。可以在灯芯作用期间通过加热底部充胶材料的烘箱32连续移动封装。在灯芯作用期间连续移动衬底12,可以减少底部充胶集成电路需要的时间,所以可以降低制造封装的成本。衬底12可以在传送带(未示出)上通过烘箱在工作台30和34间移动。
可以在第二分散台34,沿集成电路18的四侧,在衬底12上分散第二底部充胶材料26。第二材料26可以按形成包封和密封第一材料24的填料的方式分散。例如,可以在约80-120℃的温度下,分散第二底部充胶材料26。
第一和第二底部充胶材料24和26可以固化为硬化状态。材料的固化可以在约150℃的温度下进行。底部充胶材料24和26固化后,可以将焊料球22附着到衬底12的第二表面16上。
尽管结合附图介绍和展示了特定的例示实施例,但应理解,这些实施例仅仅是例示,并非对宽范围发明的限制,由于对所属领域的普通技术人员来说,可以产生各种其它改进,所以本发明不限于所展示和介绍的特定结构和设置。
Claims (15)
1.一种方法,包括:
将集成电路安装到衬底上;
分散将附着于该集成电路和该衬底上的第一底部充胶材料;及
用第二底部充胶材料密封集成电路的四个边缘及第一底部充胶材料。
2.根据权利要求1的方法,其中第一底部充胶材料在集成电路和衬底间流动。
3.根据权利要求2的方法,其中当第一底部充胶材料在集成电路和衬底间流动时,衬底在烘箱中移动。
4.根据权利要求1的方法,还包括在分散第一底部充胶材料之前加热衬底。
5.根据权利要求4的方法,还包括将第一底部充胶材料加热到部分凝胶态。
6.根据权利要求5的方法,其中将衬底加热到温度高于处于所说部分凝胶态的第一底部充胶材料的温度。
7.根据权利要求1的方法,还包括在分散第一底部充胶材料之前,用焊料凸点将集成电路安装到衬底上。
8.根据权利要求7的方法,还包括在衬底上附着焊料球。
9.根据权利要求1的方法,其中在将集成电路安装到衬底上之前,该方法还包括:
烘焙衬底。
10.根据权利要求9的方法,其中当第一底部充胶材料在集成电路和衬底间流动时,衬底在烘箱中移动。
11.根据权利要求10的方法,还包括在分散第一底部充胶材料之前,用焊料凸点将集成电路安装到衬底上。
12.根据权利要求11的方法,还包括在衬底上附着焊料球。
13.根据权利要求9的方法,还包括固化第一和第二底部充胶材料。
14.根据权利要求9的方法,还包括将焊料球附着到衬底的一个表面上。
15.根据权利要求9的方法,其中分散第一底部充胶材料发生在温度110-120℃之间。
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Application Number | Priority Date | Filing Date | Title |
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US09/262,131 US6238948B1 (en) | 1999-03-03 | 1999-03-03 | Controlled collapse chip connection (C4) integrated circuit package that has a fillet which seals an underfill material |
US09/262131 | 1999-03-03 |
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CN1349657A CN1349657A (zh) | 2002-05-15 |
CN1165979C true CN1165979C (zh) | 2004-09-08 |
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US (1) | US6238948B1 (zh) |
JP (1) | JP2002540593A (zh) |
KR (1) | KR100504635B1 (zh) |
CN (1) | CN1165979C (zh) |
AU (1) | AU3231800A (zh) |
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US20020014688A1 (en) * | 1999-03-03 | 2002-02-07 | Suresh Ramalingam | Controlled collapse chip connection (c4) integrated circuit package which has two dissimilar underfill materials |
US6528345B1 (en) | 1999-03-03 | 2003-03-04 | Intel Corporation | Process line for underfilling a controlled collapse |
US6559670B1 (en) * | 1999-11-16 | 2003-05-06 | Lsi Logic Corporation | Backside liquid crystal analysis technique for flip-chip packages |
US6617195B1 (en) * | 2000-07-24 | 2003-09-09 | Advanced Micro Devices, Inc. | Method of reflowing organic packages using no-clean flux |
AU2002230703A1 (en) * | 2000-12-11 | 2002-06-24 | Essex Corporation | 3d fourier transforms for irregularly sampled data |
US6573592B2 (en) * | 2001-08-21 | 2003-06-03 | Micron Technology, Inc. | Semiconductor die packages with standard ball grid array footprint and method for assembling the same |
US6815831B2 (en) * | 2001-12-12 | 2004-11-09 | Intel Corporation | Flip-chip device with multi-layered underfill having graded coefficient of thermal expansion |
US7238550B2 (en) * | 2002-02-26 | 2007-07-03 | Tandon Group Ltd. | Methods and apparatus for fabricating Chip-on-Board modules |
US6798806B1 (en) * | 2002-09-03 | 2004-09-28 | Finisar Corporation | Hybrid mirror VCSELs |
US7026376B2 (en) * | 2003-06-30 | 2006-04-11 | Intel Corporation | Fluxing agent for underfill materials |
US7242097B2 (en) * | 2003-06-30 | 2007-07-10 | Intel Corporation | Electromigration barrier layers for solder joints |
US20050121310A1 (en) * | 2003-12-03 | 2005-06-09 | Intel Corporation | Method and substrate to control flow of underfill |
US7068125B2 (en) * | 2004-03-04 | 2006-06-27 | Robert Bosch Gmbh | Temperature controlled MEMS resonator and method for controlling resonator frequency |
US7745256B2 (en) * | 2008-05-05 | 2010-06-29 | International Business Machines Corporation | Rectangular-shaped controlled collapse chip connection |
US7915732B2 (en) * | 2008-06-30 | 2011-03-29 | International Business Mahines Corporation | Production of integrated circuit chip packages prohibiting formation of micro solder balls |
KR101330225B1 (ko) * | 2012-05-25 | 2013-11-18 | 피에스케이 주식회사 | 기판 접합 방법 및 기판 리플로우 처리 장치 |
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JPS63239827A (ja) * | 1987-03-27 | 1988-10-05 | Hitachi Ltd | 半導体装置 |
JP2699350B2 (ja) | 1987-04-28 | 1998-01-19 | ソニー株式会社 | デジタルpll回路 |
JPS6455832A (en) | 1987-08-27 | 1989-03-02 | Seiko Instr & Electronics | Mounting method for semiconductor element |
EP0340492A3 (en) | 1988-05-02 | 1990-07-04 | International Business Machines Corporation | Conformal sealing and interplanar encapsulation of electronic device structures |
JPH0256941A (ja) | 1988-08-20 | 1990-02-26 | Matsushita Electric Works Ltd | 半導体素子の封止方法 |
JPH0639563B2 (ja) | 1989-12-15 | 1994-05-25 | 株式会社日立製作所 | 半導体装置の製法 |
US5371328A (en) | 1993-08-20 | 1994-12-06 | International Business Machines Corporation | Component rework |
JPH08153830A (ja) | 1994-11-29 | 1996-06-11 | Toshiba Corp | 半導体装置およびその製造方法 |
EP0778616A3 (en) | 1995-12-05 | 1999-03-31 | Lucent Technologies Inc. | Method of packaging devices with a gel medium confined by a rim member |
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US5821456A (en) | 1996-05-01 | 1998-10-13 | Motorola, Inc. | Microelectronic assembly including a decomposable encapsulant, and method for forming and reworking same |
US5919329A (en) * | 1997-10-14 | 1999-07-06 | Gore Enterprise Holdings, Inc. | Method for assembling an integrated circuit chip package having at least one semiconductor device |
US5998242A (en) * | 1997-10-27 | 1999-12-07 | Lsi Logic Corporation | Vacuum assisted underfill process and apparatus for semiconductor package fabrication |
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1999
- 1999-03-03 US US09/262,131 patent/US6238948B1/en not_active Expired - Lifetime
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- 2000-02-14 CN CNB008071268A patent/CN1165979C/zh not_active Expired - Fee Related
- 2000-02-14 JP JP2000603077A patent/JP2002540593A/ja active Pending
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WO2000052739A2 (en) | 2000-09-08 |
WO2000052739A3 (en) | 2001-01-11 |
CN1349657A (zh) | 2002-05-15 |
KR100504635B1 (ko) | 2005-08-03 |
KR20010113723A (ko) | 2001-12-28 |
MXPA01008691A (es) | 2002-03-14 |
US6238948B1 (en) | 2001-05-29 |
JP2002540593A (ja) | 2002-11-26 |
AU3231800A (en) | 2000-09-21 |
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