CN117059637A - 驱动芯片 - Google Patents

驱动芯片 Download PDF

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CN117059637A
CN117059637A CN202310278912.4A CN202310278912A CN117059637A CN 117059637 A CN117059637 A CN 117059637A CN 202310278912 A CN202310278912 A CN 202310278912A CN 117059637 A CN117059637 A CN 117059637A
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circuit
wafer substrate
light
image sensing
photodiode
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印秉宏
卢志文
王佳祥
沈加峻
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Yinscorp Ltd
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Yinscorp Ltd
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    • H01L27/144—Devices controlled by radiation
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    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
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    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
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    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H03L7/0991—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator being a digital oscillator, e.g. composed of a fixed oscillator followed by a variable frequency divider
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Abstract

本发明提供一种驱动芯片。驱动芯片包括发光模块以及晶圆基板。发光模块具有多个接脚。晶圆基板具有第一表面以及第二表面。晶圆基板包括光电二极管、图像传感电路以及发光驱动电路。光电二极管设置在晶圆基板的第二表面。图像传感电路设置在晶圆基板中，并且电性连接光电二极管，以驱动光电二极管。发光驱动电路设置在晶圆基板中，并且经由晶圆基板的第一表面上的多个连接单元电性连接发光模块的多个接脚，以驱动发光模块。

Description

驱动芯片
技术领域
本发明涉及一种芯片，尤其涉及一种驱动芯片。
背景技术
一般来说，图像传感电路设置为一个芯片(例如CMOS图像传感器(CMOS ImageSensor，CIS))，并且发光驱动电路(例如发光二极管(Light Emitting Diode，LED)驱动器)与发光模块(例如LED发光模块)设置为另一个芯片。换言之，若要实现具有图像传感功能以及发光功能的电子元件，则传统上须将上述两个芯片进行封装。如此一来，传统的设置方式将会导致电子元件的制造成本较高、体积过大甚至耗电较多的情况。
发明内容
本发明是针对一种驱动芯片，可将发光模块整合在晶圆基板上。
根据本发明的实施例，本发明的驱动芯片包括发光模块以及晶圆基板。发光模块具有多个接脚。晶圆基板具有第一表面以及第二表面。晶圆基板包括发光二极管、图像传感电路以及发光驱动电路。光电二极管设置在晶圆基板的第二表面。图像传感电路设置在晶圆基板中，并且电性连接光电二极管，以驱动光电二极管。发光驱动电路设置在晶圆基板中，并且经由晶圆基板的第一表面上的多个连接单元电性连接发光模块的多个接脚，以驱动发光模块。
基于上述，本发明的驱动芯片的晶圆基板中可形成图像传感电路以及发光驱动电路，以实现将发光模块整合在晶圆基板上。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。
附图说明
图1是本发明的一实施例的驱动芯片的结构示意图；
图2是本发明的一实施例的设置有驱动芯片的设备的示意图；
图3是本发明的一实施例的驱动芯片的电路示意图。
附图标记说明
100、200、300:驱动芯片；
101:传感光；
102:发射光；
110:晶圆基板；
111:连接单元；
112:发光驱动电路；
113:光电二极管；
114:图像传感电路；
120:发光模块；
121:接脚；
301:输入输出端口；
302:时序控制电路；
303:电源产生电路；
304:参考电流产生电路；
305:参考电压产生电路；
306:时钟信号产生电路；
307:栅极驱动器；
308:源极驱动器；
309:像素驱动器；
310:列电路；
311:发光像素电路；
312:传感像素电路；
S1:第一表面；
S2:第二表面。
具体实施方式
现将详细地参考本发明的示范性实施例，示范性实施例的实例说明于附图中。只要有可能，相同元件符号在附图和描述中用来表示相同或相似部分。
图1是本发明的一实施例的驱动芯片的结构示意图。参考图1，驱动芯片100包括晶圆基板110以及发光模块120。发光模块120可整合(封装)在晶圆基板110上。图1为驱动芯片100的侧视图。在本实施例中，晶圆基板110具有第一表面S1以及第二表面S2。晶圆基板110包括发光驱动电路112、发光二极管113以及图像传感电路114。光电二极管113可设置在晶圆基板110的第二表面S2。光电二极管113形成在晶圆基板110上或内部。多个光电二极管113可形成传感像素阵列，并且形成在晶圆基板110的第二表面S2，以朝第一方向接收传感光101。在本实施例中，图像传感电路114设置在晶圆基板110中，并且靠近于(邻近于)晶圆基板110的第二表面S2，以电性连接光电二极管113。图像传感电路114可驱动光电二极管113，以操作光电二极管113朝第一方向传感传感光101，以取得传感结果。在本实施例中，晶圆基板110的光电二极管113以及图像传感电路114可形成背照式(Back SideIllumination，BSI)传感器。在本实施例中，晶圆基板110的第一表面S1邻近于晶圆基板110的装置层，并且晶圆基板110的第二表面S2邻近于晶圆基板110的基板层。
在本实施例中，发光驱动电路112设置在晶圆基板110中，并且靠近于(邻近于)晶圆基板110的第一表面S1。发光驱动电路112可经由晶圆基板110的第一表面S1上的多个连接单元111电性连接发光模块120的多个接脚121，以驱动发光模块120。连接单元111可包括绕线(routing)与硅穿孔(Through Silicon Via，TSV)，也还可包括例如打线(wire)或连接电路等，并且也可例如是以重分布层(Redistribution Layer，RDL)的制程结构实现，但本发明并不限于此。接脚121可例如包括金属接脚，或是以焊球(Solder ball)的方式实现，而本发明也并不限于此。
在本实施例中，发光模块120可为发光二极管模块，并且例如包括由阵列排列设置多个发光二极管所形成的发光像素阵列。在本实施例中，发光驱动电路112可驱动发光模块120朝第二方向产生发射光102，以例如提供图像。发光模块120可用于朝第二方向提供显示画面。在本实施例中，第一方向可相反于第二方向。第一表面S1与第二表面S2分别位于晶圆基板110的相对两侧。换言之，发光模块120的发光方向相反于光电二极管113的传感方向。
因此，本发明的驱动芯片100可在一个芯片中整合有发光驱动电路112以及图像传感电路114，并且发光驱动电路112以及图像传感电路114可共用部分功能电路，或是某些功能电路可整合发光驱动电路112以及图像传感电路114的功能。如此一来，同时具备有发光驱动功能以及图像传感功能的驱动芯片100可具有体积小、成本低及功耗低的功效。并且，驱动芯片100可基于上述优点，来适于整合在可携式(portable)设备上。在一实施例中，驱动芯片100可例如应用在智能眼镜上。
图2是本发明的一实施例的设置有驱动芯片的设备的示意图。参考图1以及图2，图2为一个智能眼镜的示意图。如图2所示，驱动芯片100可例如形成在智能眼镜的玻璃的至少一部分上，并且用以接收传感光101以及产生发射光102。举例而言，使用者可携带智能眼镜，并且智能眼镜可传感使用者前方的内容，并且可同时产生其他图像画面给使用者观看。
图3是本发明的一实施例的驱动芯片的电路示意图。参考图1以及图3，图1的驱动芯片100还可包括如图3所示的驱动芯片300的相关内部电路。在本实施例中，驱动芯片300可包括输入输出端口301、时序控制电路302、电源产生电路303、参考电流产生电路304、参考电压产生电路305、时钟信号产生电路306、栅极驱动器307、源极驱动器308、像素驱动器309、列电路310、发光像素电路311以及传感像素电路312。
在本实施例中，图1的图像传感电路114可包括像素驱动器309、列电路310以及传感像素电路312。图1的发光驱动电路112可包括栅极驱动器307、源极驱动器308以及发光像素电路311。在本实施例中，发光驱动电路112以及图像传感电路114可共用输入输出端口301、电源产生电路303、参考电流产生电路304、参考电压产生电路305以及时钟信号产生电路306。
在本实施例中，输入输出端口301可用于发光驱动电路112以及图像传感电路114的数据输入与输出。电源产生电路303可用于提供相同或不相同的电源信号至发光驱动电路112以及图像传感电路114。参考电流产生电路304可用于提供相同或不相同的参考电流至发光驱动电路112以及图像传感电路114。参考电压产生电路305可用于提供相同或不相同的参考电压至发光驱动电路112以及图像传感电路114。时钟信号产生电路306用于提供相同或不相同的时钟信号至发光驱动电路112以及图像传感电路114。
在本实施例中，时序控制电路302可整合图像传感电路114以及发光驱动电路112的时序控制，以提供图像传感电路114以及发光驱动电路112分别所需的时序控制信号至栅极驱动器307、源极驱动器308、像素驱动器309以及列电路310。
在本实施例中，栅极驱动器307以及源极驱动器308可提供栅极驱动信号以及源极驱动信号至发光像素电路311，以控制发光像素电路311来驱动发光模块120进行发光(显示)功能。发光像素电路311可例如包括相关晶体管、电容和/或电阻等电子元件。在本实施例中，像素驱动器309以及列电路310可提供传感驱动信号以及列控制信号至传感像素电路312来控制驱动光电二极管113进行光(图像)传感功能。因此，驱动芯片100、300可有效地实现发光驱动功能以及图像传感功能，并且具有体积小、成本低及功耗低的功效。
综上所述，本发明的驱动芯片可同时具备有发光驱动功能以及图像传感功能，并且可实现具有体积小、成本低及功耗低的功效。本发明的驱动芯片可适于整合在可携式设备上。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (10)

1.一种驱动芯片，其特征在于，包括：
发光模块，具有多个接脚；以及
晶圆基板，具有第一表面以及第二表面，并且所述晶圆基板包括：
光电二极管，设置在所述晶圆基板的所述第二表面；
图像传感电路，设置在所述晶圆基板中，并且电性连接所述光电二极管，以驱动所述光电二极管；以及
发光驱动电路，设置在所述晶圆基板中，并且经由所述晶圆基板的所述第一表面上的多个连接单元电性连接所述发光模块的所述多个接脚，以驱动所述发光模块。
2.根据权利要求1所述的驱动芯片，其特征在于，所述第一表面与所述第二表面分别位于所述晶圆基板的相对两侧。
3.根据权利要求1所述的驱动芯片，其特征在于，所述发光模块的发光方向相反于所述光电二极管的传感方向。
4.根据权利要求1所述的驱动芯片，其特征在于，所述发光模块包括多个发光二极管。
5.根据权利要求1所述的驱动芯片，其特征在于，所述多个连接单元包括多个绕线与硅穿孔。
6.根据权利要求1所述的驱动芯片，其特征在于，所述晶圆基板的所述第一表面邻近于所述晶圆基板的装置层，并且所述晶圆基板的第二表面邻近于所述晶圆基板的基板层。
7.根据权利要求1所述的驱动芯片，其特征在于，所述晶圆基板的所述光电二极管以及所述图像传感电路形成背照式传感器。
8.根据权利要求1所述的驱动芯片，其特征在于，所述图像传感电路以及所述发光驱动电路共用输入输出电路以及电源产生电路。
9.根据权利要求1所述的驱动芯片，其特征在于，所述图像传感电路以及所述发光驱动电路共用时钟信号产生电路，并且时序控制电路整合所述图像传感电路以及所述发光驱动电路的时序控制。
10.根据权利要求1所述的驱动芯片，其特征在于，所述图像传感电路以及所述发光驱动电路共用参考电流产生电路以及参考电压产生电路。
CN202310278912.4A 2022-05-13 2023-03-21 驱动芯片 Pending CN117059637A (zh)

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Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7489352B2 (en) * 2002-11-15 2009-02-10 Micron Technology, Inc. Wide dynamic range pinned photodiode active pixel sensor (APS)
US7728896B2 (en) * 2005-07-12 2010-06-01 Micron Technology, Inc. Dual conversion gain gate and capacitor and HDR combination
KR100911653B1 (ko) * 2007-12-13 2009-08-10 삼성전자주식회사 시간기반 씨모스 이미지 센서와 그 리셋 방법 및 이를포함하는 구동 방법
JP5489681B2 (ja) * 2009-12-02 2014-05-14 キヤノン株式会社 固体撮像装置
TWI438889B (zh) * 2010-12-01 2014-05-21 Hon Hai Prec Ind Co Ltd 發光二極體封裝結構
US20120249851A1 (en) * 2011-03-28 2012-10-04 Aptina Imaging Corporation Eclipse detection using double reset sampling for column parallel adc
US9319612B2 (en) * 2013-07-08 2016-04-19 Semiconductor Components Industries, Llc Imagers with improved analog-to-digital circuitry
US20150123173A1 (en) * 2013-11-01 2015-05-07 Silicon Optronics, Inc. 3d stacked image sensor with pmos components
EP3101812B1 (en) * 2015-06-05 2022-10-26 Cmosis Bvba In-pixel differential transconductance amplifier for adc and image sensor architecture
FR3046298B1 (fr) * 2015-12-23 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique d’emission de lumiere
US20180012069A1 (en) * 2016-07-06 2018-01-11 Samsung Electronics Co., Ltd. Fingerprint sensor, fingerprint sensor package, and fingerprint sensing system using light sources of display panel
WO2018198691A1 (ja) * 2017-04-25 2018-11-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
CN108989715B (zh) * 2017-06-01 2021-02-12 飞瑞菲尼克斯公司 图像传感器
US12015862B2 (en) * 2018-05-24 2024-06-18 Gigajot Technology, Inc. Image sensor having pixels with isolated floating diffusions
TW202005357A (zh) * 2018-05-25 2020-01-16 原相科技股份有限公司 改善像素感測效率的電路
TW202034478A (zh) * 2019-02-04 2020-09-16 日商索尼半導體解決方案公司 電子裝置
WO2021031167A1 (zh) * 2019-08-21 2021-02-25 京东方科技集团股份有限公司 显示基板、显示装置及显示基板的制作方法
KR20210156458A (ko) * 2020-06-18 2021-12-27 삼성전자주식회사 이미지 센싱 장치 및 이를 포함하는 전자 장치
KR20220036634A (ko) * 2020-09-16 2022-03-23 삼성전자주식회사 네거티브 레벨 쉬프터 및 이를 포함하는 비휘발성 메모리 장치

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