US20230369372A1 - Driver chip - Google Patents

Driver chip Download PDF

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Publication number
US20230369372A1
US20230369372A1 US18/305,388 US202318305388A US2023369372A1 US 20230369372 A1 US20230369372 A1 US 20230369372A1 US 202318305388 A US202318305388 A US 202318305388A US 2023369372 A1 US2023369372 A1 US 2023369372A1
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Prior art keywords
light
wafer substrate
circuit
driver chip
emitting
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US18/305,388
Inventor
Ping-Hung Yin
Chih-Wen Lu
Jia-Shyang Wang
Jai-Jyun Shen
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Yinscorp Ltd
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Yinscorp Ltd
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Priority to US18/305,388 priority Critical patent/US20230369372A1/en
Assigned to YINSCORP LTD. reassignment YINSCORP LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LU, CHIH-WEN, SHEN, JAI-JYUN, WANG, JIA-SHYANG, YIN, PING-HUNG
Publication of US20230369372A1 publication Critical patent/US20230369372A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/08—Clock generators with changeable or programmable clock frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H03L7/0991—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator being a digital oscillator, e.g. composed of a fixed oscillator followed by a variable frequency divider
    • H03L7/0992—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator being a digital oscillator, e.g. composed of a fixed oscillator followed by a variable frequency divider comprising a counter or a frequency divider
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/627—Detection or reduction of inverted contrast or eclipsing effects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

  • the disclosure relates to a chip, and particularly relates to a driver chip.
  • the image sensing circuit is disposed as a chip (such as a CMOS image sensor (CIS)), and the light-emitting driving circuit (such as a light-emitting diode (LED) driver) and the light-emitting module (such as an LED light-emitting module) are disposed as another chip.
  • the light-emitting driving circuit such as a light-emitting diode (LED) driver
  • the light-emitting module such as an LED light-emitting module
  • the disclosure provides a driver chip, which can integrate a light-emitting module on a wafer substrate.
  • the driver chip of the disclosure includes a light-emitting module and a wafer substrate.
  • the light-emitting module has multiple pins.
  • the wafer substrate has a first surface and a second surface.
  • the wafer substrate includes a photodiode, an image sensing circuit, and a light-emitting driving circuit.
  • the photodiode is disposed on the second surface of the wafer substrate.
  • the image sensing circuit is disposed in the wafer substrate and is electrically connected to the photodiode to drive the photodiode.
  • the light-emitting driving circuit is disposed in the wafer substrate, and is electrically connected to the multiple pins of the light-emitting module via multiple connection units on the first surface of the wafer substrate to drive the light-emitting module.
  • the image sensing circuit and the light-emitting driving circuit may be formed, so as to realize integrating the light-emitting module on the wafer substrate.
  • FIG. 1 is a schematic structural view of a driver chip according to an embodiment of the disclosure.
  • FIG. 2 is a schematic view of an apparatus disposed with a driver chip according to an embodiment of the disclosure.
  • FIG. 3 is a schematic circuit view of a driver chip according to an embodiment of the disclosure.
  • FIG. 1 is a schematic structural view of a driver chip according to an embodiment of the disclosure.
  • a driver chip 100 includes a wafer substrate 110 and a light-emitting module 120 .
  • the light-emitting module 120 may be integrated (packaged) on the wafer substrate 110 .
  • FIG. 1 is a side view of the driver chip 100 .
  • the wafer substrate 110 has a first surface S 1 and a second surface S 2 .
  • the wafer substrate 110 includes a light-emitting driving circuit 112 , a photodiode 113 , and an image sensing circuit 114 .
  • the photodiode 113 may be disposed on the second surface S 2 of the wafer substrate 110 .
  • the photodiode 113 is formed on or inside the wafer substrate 110 .
  • Multiple photodiodes 113 may form a sensing pixel array, and are formed on the second surface S 2 of the wafer substrate 110 to receive a sensed light 101 toward a first direction.
  • the image sensing circuit 114 is disposed in the wafer substrate 110 and is close to (adjacent to) the second surface S 2 of the wafer substrate 110 to be electrically connected to the photodiode 113 .
  • the image sensing circuit 114 may drive the photodiode 113 to operate the photodiode 113 to sense the sensed light 101 toward the first direction to obtain a sensed result.
  • the photodiode 113 and the image sensing circuit 114 of the wafer substrate 110 may form a back side illumination (BSI) sensor.
  • the first surface S 1 of the wafer substrate 110 is adjacent to a device layer of the wafer substrate 110
  • the second surface S 2 of the wafer substrate 110 is adjacent to a substrate layer of the wafer substrate 110 .
  • the light-emitting driving circuit 112 is disposed in the wafer substrate 110 and is close to (adjacent to) the first surface S 1 of the wafer substrate 110 .
  • the light-emitting driving circuit 112 may be electrically connected to multiple pins 121 of the light-emitting module 120 via multiple connection units 111 on the first surface S 1 of the wafer substrate 110 to drive the light-emitting module 120 .
  • the connection units 111 may include routings and through silicon vias (TSVs), and may also include, for example, wires or connecting circuits, and may also be, for example, realized in a redistribution layer (RDL) process structure, but the disclosure is not limited thereto.
  • the pins 121 may, for example, include metal pins, or be realized in the form of solder balls, and the disclosure is not limited thereto.
  • the light-emitting module 120 may be a light-emitting diode (LED) module, and includes, for example, a light-emitting pixel array formed by multiple LEDs arranged in an array.
  • the light-emitting driving circuit 112 may drive the light-emitting module 120 to generate an emitted light 102 toward a second direction, for example, to provide an image.
  • the light-emitting module 120 may be used to provide a display image in the second direction.
  • the first direction may be opposite to the second direction.
  • the first surface S 1 and the second surface S 2 are respectively positioned on two opposite sides of the wafer substrate 110 . In other words, a light-emitting direction of the light-emitting module 120 is opposite to a sensing direction of the photodiode 113 .
  • the driver chip 100 of the disclosure may integrate the light-emitting driving circuit 112 and the image sensing circuit 114 in a chip, and the light-emitting driving circuit 112 and the image sensing circuit 114 may share a part of functional circuits, or some functional circuits may integrate the functions of the light-emitting driving circuit 112 and the image sensing circuit 114 .
  • the driver chip 100 simultaneously having a light-emitting driving function and an image sensing function can be small in size, low in cost, and low in power consumption.
  • the driver chip 100 can be adapted to be integrated on a portable device based on the above-mentioned advantages.
  • the driver chip 100 may be, for example, applied to smart glasses.
  • FIG. 2 is a schematic view of a device disposed with a driver chip according to an embodiment of the disclosure.
  • FIG. 2 is a schematic view of a pair of smart glasses.
  • the driver chip 100 may be formed, for example, on at least a part of the glass of the smart glasses, and is used to receive the sensed light 101 and generate the emitted light 102 .
  • a user may wear the smart glasses, and the smart glasses may sense a content in front of the user, and may simultaneously generate other image frames for the user to watch.
  • FIG. 3 is a schematic circuit view of a driver chip according to an embodiment of the disclosure.
  • the driver chip 100 in FIG. 1 may further include related internal circuits of a driver chip 300 shown in FIG. 3 .
  • the driver chip 300 may include an input output interface 301 , a timing control circuit 302 , a power source generate circuit 303 , a reference current generate circuit 304 , a reference voltage generate circuit 305 , a clock signal generate circuit 306 , a gate driver 307 , a source driver 308 , a pixel driver 309 , a column circuit 310 , a light-emitting pixel circuit 311 , and a sensing pixel circuit 312 .
  • the image sensing circuit 114 in FIG. 1 may include the pixel driver 309 , the column circuit 310 , and the sensing pixel circuit 312 .
  • the light-emitting driving circuit 112 in FIG. 1 may include the gate driver 307 , the source driver 308 , and the light-emitting pixel circuit 311 .
  • the light-emitting driving circuit 112 and the image sensing circuit 114 may share the input output interface 301 , the power source generate circuit 303 , the reference current generate circuit 304 , the reference voltage generate circuit 305 , and the clock signal generate circuit 306 .
  • the input output interface 301 may be used to input and output data of the light-emitting driving circuit 112 and the image sensing circuit 114 .
  • the power source generate circuit 303 may be used to provide the same or different power signals to the light-emitting driving circuit 112 and the image sensing circuit 114 .
  • the reference current generate circuit 304 may be used to provide the same or different reference currents to the light-emitting driving circuit 112 and the image sensing circuit 114 .
  • the reference voltage generate circuit 305 may be used to provide the same or different reference voltages to the light-emitting driving circuit 112 and the image sensing circuit 114 .
  • the clock signal generate circuit 306 is used to provide the same or different clock signals to the light-emitting driving circuit 112 and the image sensing circuit 114 .
  • the timing control circuit 302 may integrate the timing control of the image sensing circuit 114 and the light-emitting driving circuit 112 to provide timing control signals required by the image sensing circuit 114 and the light-emitting driving circuit 112 respectively to the gate driver 307 , the source driver 308 , the pixel driver 309 , and the column circuit 310 .
  • the gate driver 307 and the source driver 308 may provide a gate driving signal and a source driving signal to the light-emitting pixel circuit 311 to control the light-emitting pixel circuit 311 to drive the light-emitting module 120 to perform a light-emitting (display) function.
  • the light-emitting pixel circuit 311 may, for example, include electronic elements such as related transistors, capacitors and/or resistors.
  • the pixel driver 309 and the column circuit 310 may provide a sensing driving signal and a column control signal to the sensing pixel circuit 312 to control and drive the photodiode 113 to perform a light (image) sensing function. Therefore, the driver chip 100 , 300 can effectively realize the light-emitting driving function and the image sensing function, and has the effects of small in size, low in cost, and low in power consumption.
  • the driver chip of the disclosure can simultaneously have the light-emitting driving function and the image sensing function, and can realize having the effects of small in size, low in cost, and low in power consumption.
  • the driver chip of the disclosure can be adapted to be integrated on a portable device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
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  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Analogue/Digital Conversion (AREA)
  • Manipulation Of Pulses (AREA)
  • Electroluminescent Light Sources (AREA)
  • Measurement Of Velocity Or Position Using Acoustic Or Ultrasonic Waves (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Facsimile Heads (AREA)

Abstract

A driver chip is provided. The driver chip includes a light-emitting module and a wafer substrate. The light-emitting module has multiple pins. The wafer substrate has a first surface and a second surface. The wafer substrate includes a photodiode, an image sensing circuit, and a light-emitting driving circuit. The photodiode is disposed on the second surface of the wafer substrate. The image sensing circuit is disposed in the wafer substrate and is electrically connected to the photodiode to drive the photodiode. The light-emitting driving circuit is disposed in the wafer substrate, and is electrically connected to the multiple pins of the light-emitting module via multiple connection units on the first surface of the wafer substrate to drive the light-emitting module.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application claims the priority benefit of U.S. provisional application Ser. No. 63/341,423, filed on May 13, 2022. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
    • BACKGROUND Technical Field
  • The disclosure relates to a chip, and particularly relates to a driver chip.
    • DESCRIPTION OF RELATED ART
  • Generally, the image sensing circuit is disposed as a chip (such as a CMOS image sensor (CIS)), and the light-emitting driving circuit (such as a light-emitting diode (LED) driver) and the light-emitting module (such as an LED light-emitting module) are disposed as another chip. In other words, if an electronic element having the image sensing function and the light-emitting function is to be realized, then traditionally, the two chips have to be packaged. As a result, the traditional disposition method leads to high manufacturing cost, excessive volume, and even high power consumption of the electronic element.
    • SUMMARY
  • The disclosure provides a driver chip, which can integrate a light-emitting module on a wafer substrate.
  • The driver chip of the disclosure includes a light-emitting module and a wafer substrate. The light-emitting module has multiple pins. The wafer substrate has a first surface and a second surface. The wafer substrate includes a photodiode, an image sensing circuit, and a light-emitting driving circuit. The photodiode is disposed on the second surface of the wafer substrate. The image sensing circuit is disposed in the wafer substrate and is electrically connected to the photodiode to drive the photodiode. The light-emitting driving circuit is disposed in the wafer substrate, and is electrically connected to the multiple pins of the light-emitting module via multiple connection units on the first surface of the wafer substrate to drive the light-emitting module.
  • Based on the above, in the wafer substrate of the driver chip of the disclosure, the image sensing circuit and the light-emitting driving circuit may be formed, so as to realize integrating the light-emitting module on the wafer substrate.
  • In order to make the above-mentioned features and advantages of the disclosure more comprehensible, the following embodiments are described in detail together with the accompanying drawings.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic structural view of a driver chip according to an embodiment of the disclosure.
  • FIG. 2 is a schematic view of an apparatus disposed with a driver chip according to an embodiment of the disclosure.
  • FIG. 3 is a schematic circuit view of a driver chip according to an embodiment of the disclosure.
    •  DESCRIPTION OF THE EMBODIMENTS
  • In order to make the content of the disclosure more comprehensible, the following embodiments are taken as examples in which the disclosure may indeed be implemented. In addition, wherever possible, elements/components/steps using the same reference numerals in the drawings and embodiments represent the same or similar parts.
  • FIG. 1 is a schematic structural view of a driver chip according to an embodiment of the disclosure. Referring to FIG. 1 , a driver chip 100 includes a wafer substrate 110 and a light-emitting module 120. The light-emitting module 120 may be integrated (packaged) on the wafer substrate 110. FIG. 1 is a side view of the driver chip 100. In this embodiment, the wafer substrate 110 has a first surface S1 and a second surface S2. The wafer substrate 110 includes a light-emitting driving circuit 112, a photodiode 113, and an image sensing circuit 114. The photodiode 113 may be disposed on the second surface S2 of the wafer substrate 110. The photodiode 113 is formed on or inside the wafer substrate 110. Multiple photodiodes 113 may form a sensing pixel array, and are formed on the second surface S2 of the wafer substrate 110 to receive a sensed light 101 toward a first direction. In this embodiment, the image sensing circuit 114 is disposed in the wafer substrate 110 and is close to (adjacent to) the second surface S2 of the wafer substrate 110 to be electrically connected to the photodiode 113. The image sensing circuit 114 may drive the photodiode 113 to operate the photodiode 113 to sense the sensed light 101 toward the first direction to obtain a sensed result. In this embodiment, the photodiode 113 and the image sensing circuit 114 of the wafer substrate 110 may form a back side illumination (BSI) sensor. In this embodiment, the first surface S1 of the wafer substrate 110 is adjacent to a device layer of the wafer substrate 110, and the second surface S2 of the wafer substrate 110 is adjacent to a substrate layer of the wafer substrate 110.
  • In this embodiment, the light-emitting driving circuit 112 is disposed in the wafer substrate 110 and is close to (adjacent to) the first surface S1 of the wafer substrate 110. The light-emitting driving circuit 112 may be electrically connected to multiple pins 121 of the light-emitting module 120 via multiple connection units 111 on the first surface S1 of the wafer substrate 110 to drive the light-emitting module 120. The connection units 111 may include routings and through silicon vias (TSVs), and may also include, for example, wires or connecting circuits, and may also be, for example, realized in a redistribution layer (RDL) process structure, but the disclosure is not limited thereto. The pins 121 may, for example, include metal pins, or be realized in the form of solder balls, and the disclosure is not limited thereto.
  • In this embodiment, the light-emitting module 120 may be a light-emitting diode (LED) module, and includes, for example, a light-emitting pixel array formed by multiple LEDs arranged in an array. In this embodiment, the light-emitting driving circuit 112 may drive the light-emitting module 120 to generate an emitted light 102 toward a second direction, for example, to provide an image. The light-emitting module 120 may be used to provide a display image in the second direction. In this embodiment, the first direction may be opposite to the second direction. The first surface S1 and the second surface S2 are respectively positioned on two opposite sides of the wafer substrate 110. In other words, a light-emitting direction of the light-emitting module 120 is opposite to a sensing direction of the photodiode 113.
  • Therefore, the driver chip 100 of the disclosure may integrate the light-emitting driving circuit 112 and the image sensing circuit 114 in a chip, and the light-emitting driving circuit 112 and the image sensing circuit 114 may share a part of functional circuits, or some functional circuits may integrate the functions of the light-emitting driving circuit 112 and the image sensing circuit 114. In this way, the driver chip 100 simultaneously having a light-emitting driving function and an image sensing function can be small in size, low in cost, and low in power consumption. Moreover, the driver chip 100 can be adapted to be integrated on a portable device based on the above-mentioned advantages. In an embodiment, the driver chip 100 may be, for example, applied to smart glasses.
  • FIG. 2 is a schematic view of a device disposed with a driver chip according to an embodiment of the disclosure. Referring to FIG. 1 and FIG. 2 , FIG. 2 is a schematic view of a pair of smart glasses. As shown in FIG. 2 , the driver chip 100 may be formed, for example, on at least a part of the glass of the smart glasses, and is used to receive the sensed light 101 and generate the emitted light 102. For example, a user may wear the smart glasses, and the smart glasses may sense a content in front of the user, and may simultaneously generate other image frames for the user to watch.
  • FIG. 3 is a schematic circuit view of a driver chip according to an embodiment of the disclosure. Referring to FIG. 1 and FIG. 3 , the driver chip 100 in FIG. 1 may further include related internal circuits of a driver chip 300 shown in FIG. 3 . In this embodiment, the driver chip 300 may include an input output interface 301, a timing control circuit 302, a power source generate circuit 303, a reference current generate circuit 304, a reference voltage generate circuit 305, a clock signal generate circuit 306, a gate driver 307, a source driver 308, a pixel driver 309, a column circuit 310, a light-emitting pixel circuit 311, and a sensing pixel circuit 312.
  • In this embodiment, the image sensing circuit 114 in FIG. 1 may include the pixel driver 309, the column circuit 310, and the sensing pixel circuit 312. The light-emitting driving circuit 112 in FIG. 1 may include the gate driver 307, the source driver 308, and the light-emitting pixel circuit 311. In this embodiment, the light-emitting driving circuit 112 and the image sensing circuit 114 may share the input output interface 301, the power source generate circuit 303, the reference current generate circuit 304, the reference voltage generate circuit 305, and the clock signal generate circuit 306.
  • In this embodiment, the input output interface 301 may be used to input and output data of the light-emitting driving circuit 112 and the image sensing circuit 114. The power source generate circuit 303 may be used to provide the same or different power signals to the light-emitting driving circuit 112 and the image sensing circuit 114. The reference current generate circuit 304 may be used to provide the same or different reference currents to the light-emitting driving circuit 112 and the image sensing circuit 114. The reference voltage generate circuit 305 may be used to provide the same or different reference voltages to the light-emitting driving circuit 112 and the image sensing circuit 114. The clock signal generate circuit 306 is used to provide the same or different clock signals to the light-emitting driving circuit 112 and the image sensing circuit 114.
  • In this embodiment, the timing control circuit 302 may integrate the timing control of the image sensing circuit 114 and the light-emitting driving circuit 112 to provide timing control signals required by the image sensing circuit 114 and the light-emitting driving circuit 112 respectively to the gate driver 307, the source driver 308, the pixel driver 309, and the column circuit 310.
  • In this embodiment, the gate driver 307 and the source driver 308 may provide a gate driving signal and a source driving signal to the light-emitting pixel circuit 311 to control the light-emitting pixel circuit 311 to drive the light-emitting module 120 to perform a light-emitting (display) function. The light-emitting pixel circuit 311 may, for example, include electronic elements such as related transistors, capacitors and/or resistors. In this embodiment, the pixel driver 309 and the column circuit 310 may provide a sensing driving signal and a column control signal to the sensing pixel circuit 312 to control and drive the photodiode 113 to perform a light (image) sensing function. Therefore, the driver chip 100, 300 can effectively realize the light-emitting driving function and the image sensing function, and has the effects of small in size, low in cost, and low in power consumption.
  • In summary, the driver chip of the disclosure can simultaneously have the light-emitting driving function and the image sensing function, and can realize having the effects of small in size, low in cost, and low in power consumption. The driver chip of the disclosure can be adapted to be integrated on a portable device.
  • Although the disclosure has been disclosed above with the embodiments, the embodiments are not intended to limit the disclosure. Persons with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the disclosure. The scope of protection of the disclosure should be defined by the appended claims.

Claims (10)

What is claimed is:
1. A driver chip, comprising:
a light-emitting module having a plurality of pins; and
a wafer substrate having a first surface and a second surface, wherein the wafer substrate comprises:
a photodiode disposed on the second surface of the wafer substrate;
an image sensing circuit disposed in the wafer substrate and electrically connected to the photodiode to drive the photodiode; and
a light-emitting driving circuit disposed in the wafer substrate and electrically connected to the plurality of pins of the light-emitting module via a plurality of connection units on the first surface of the wafer substrate to drive the light-emitting module.
2. The driver chip according to claim 1, wherein the first surface and the second surface are respectively positioned on two opposite sides of the wafer substrate.
3. The driver chip according to claim 1, wherein a light-emitting direction of the light-emitting module is opposite to a sensing direction of the photodiode.
4. The driver chip according to claim 1, wherein the light-emitting module comprises a plurality of light-emitting diodes (LEDs).
5. The driver chip according to claim 1, wherein the plurality of connection units comprise a plurality of routings and through silicon vias (TSVs).
6. The driver chip according to claim 1, wherein the first surface of the wafer substrate is adjacent to a device layer of the wafer substrate, and the second surface of the wafer substrate is adjacent to a substrate layer of the wafer substrate.
7. The driver chip according to claim 1, wherein the photodiode and the image sensing circuit of the wafer substrate form a back side illumination (BSI) sensor.
8. The driver chip according to claim 1, wherein the image sensing circuit and the light-emitting driving circuit share an input output interface and a power source generate circuit.
9. The driver chip according to claim 1, wherein the image sensing circuit and the light-emitting driving circuit share a clock signal generate circuit, and a timing control circuit integrates timing control of the image sensing circuit and the light-emitting driving circuit.
10. The driver chip according to claim 1, wherein the image sensing circuit and the light-emitting driving circuit share a reference current generate circuit and a reference voltage generate circuit.
US18/305,388 2022-05-13 2023-04-24 Driver chip Pending US20230369372A1 (en)

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US18/300,363 Pending US20230370067A1 (en) 2022-05-13 2023-04-13 Image sensor, level shifter circuit, and operation method thereof
US18/302,818 Pending US20230370743A1 (en) 2022-05-13 2023-04-19 Image sensor and image sensing method
US18/302,816 Pending US20230370749A1 (en) 2022-05-13 2023-04-19 Image sensor and image sensing method
US18/303,586 Pending US20230370750A1 (en) 2022-05-13 2023-04-20 Image sensor and operation method thereof
US18/304,323 Pending US20230370751A1 (en) 2022-05-13 2023-04-20 Image sensor and operation method thereof
US18/305,388 Pending US20230369372A1 (en) 2022-05-13 2023-04-24 Driver chip
US18/306,255 Pending US20230370073A1 (en) 2022-05-13 2023-04-25 Chip with automatic clock signal correction and automatic correction method
US18/306,988 Pending US20230370747A1 (en) 2022-05-13 2023-04-25 Image sensor and image sensing method
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US18/302,816 Pending US20230370749A1 (en) 2022-05-13 2023-04-19 Image sensor and image sensing method
US18/303,586 Pending US20230370750A1 (en) 2022-05-13 2023-04-20 Image sensor and operation method thereof
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US18/308,679 Pending US20230370744A1 (en) 2022-05-13 2023-04-28 Image sensor and operation method thereof

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