CN1166009C - 用于产生混合色电磁辐射的半导体元件 - Google Patents
用于产生混合色电磁辐射的半导体元件 Download PDFInfo
- Publication number
- CN1166009C CN1166009C CNB008030936A CN00803093A CN1166009C CN 1166009 C CN1166009 C CN 1166009C CN B008030936 A CNB008030936 A CN B008030936A CN 00803093 A CN00803093 A CN 00803093A CN 1166009 C CN1166009 C CN 1166009C
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- wavelength
- semiconductor
- emission
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 230000005670 electromagnetic radiation Effects 0.000 title abstract description 6
- 230000005855 radiation Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 48
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 238000000295 emission spectrum Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19902750A DE19902750A1 (de) | 1999-01-25 | 1999-01-25 | Halbleiterbauelement zur Erzeugung von mischfarbiger elektromagnetischer Strahlung |
DE19902750.1 | 1999-01-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1338121A CN1338121A (zh) | 2002-02-27 |
CN1166009C true CN1166009C (zh) | 2004-09-08 |
Family
ID=7895252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008030936A Expired - Lifetime CN1166009C (zh) | 1999-01-25 | 2000-01-25 | 用于产生混合色电磁辐射的半导体元件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6900466B2 (zh) |
EP (1) | EP1153442B1 (zh) |
JP (1) | JP4851648B2 (zh) |
CN (1) | CN1166009C (zh) |
DE (1) | DE19902750A1 (zh) |
TW (1) | TW478177B (zh) |
WO (1) | WO2000044053A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW497277B (en) | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
US7112916B2 (en) * | 2002-10-09 | 2006-09-26 | Kee Siang Goh | Light emitting diode based light source emitting collimated light |
DE102004052245A1 (de) * | 2004-06-30 | 2006-02-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Halbleiterbauelement mit einem derartigen Halbleiterchip |
US9331252B2 (en) | 2011-08-23 | 2016-05-03 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
US8975614B2 (en) | 2011-08-23 | 2015-03-10 | Micron Technology, Inc. | Wavelength converters for solid state lighting devices, and associated systems and methods |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3137685C2 (de) | 1981-09-22 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Leuchtdiode für Signalleuchten. |
FR2538171B1 (fr) * | 1982-12-21 | 1986-02-28 | Thomson Csf | Diode electroluminescente a emission de surface |
US4784722A (en) * | 1985-01-22 | 1988-11-15 | Massachusetts Institute Of Technology | Method forming surface emitting diode laser |
US4775876A (en) * | 1987-09-08 | 1988-10-04 | Motorola Inc. | Photon recycling light emitting diode |
DE3835942A1 (de) | 1988-10-21 | 1990-04-26 | Telefunken Electronic Gmbh | Flaechenhafter strahler |
JPH0429374A (ja) * | 1990-05-24 | 1992-01-31 | Omron Corp | 面出射型半導体発光素子およびその作製方法 |
JPH04186679A (ja) * | 1990-11-16 | 1992-07-03 | Daido Steel Co Ltd | 発光ダイオード |
US5198690A (en) * | 1990-11-26 | 1993-03-30 | Sharp Kabushiki Kaisha | Electroluminescent device of II-IV compound semiconductor |
SE468410B (sv) * | 1991-05-08 | 1993-01-11 | Asea Brown Boveri | Ytlysande lysdiod |
US5488233A (en) * | 1993-03-11 | 1996-01-30 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device with compound semiconductor layer |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JPH0856203A (ja) | 1994-08-12 | 1996-02-27 | Sumitomo Electric Ind Ltd | 無線測定方法および装置とこれを用いた無線中継装置 |
JPH11503879A (ja) | 1995-12-21 | 1999-03-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 多色光放出ダイオード、その製造方法及びこのledが組み込まれた多色表示装置 |
JP2734441B2 (ja) * | 1996-01-29 | 1998-03-30 | 日本電気株式会社 | 有機薄膜el素子 |
JP3471161B2 (ja) | 1996-03-22 | 2003-11-25 | 三菱電機株式会社 | ケーブル接続用補助具及びケーブル接続方法 |
WO1997048138A2 (en) * | 1996-06-11 | 1997-12-18 | Philips Electronics N.V. | Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
EP1441395B9 (de) | 1996-06-26 | 2012-08-15 | OSRAM Opto Semiconductors GmbH | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JPH1056203A (ja) * | 1996-08-07 | 1998-02-24 | Nippon Sanso Kk | 発光素子 |
JPH10144961A (ja) * | 1996-11-05 | 1998-05-29 | Toyoda Gosei Co Ltd | 半導体発光素子 |
US5966393A (en) * | 1996-12-13 | 1999-10-12 | The Regents Of The University Of California | Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications |
JP3449194B2 (ja) | 1997-01-28 | 2003-09-22 | 松下電工株式会社 | 回転機器の異常診断方法およびその装置 |
JPH10261818A (ja) * | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | 発光半導体装置 |
JPH10282494A (ja) * | 1997-04-07 | 1998-10-23 | Casio Comput Co Ltd | 液晶表示装置 |
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
JP3559446B2 (ja) * | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
TW406442B (en) * | 1998-07-09 | 2000-09-21 | Sumitomo Electric Industries | White colored LED and intermediate colored LED |
TW413956B (en) * | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
JP4348488B2 (ja) * | 1998-11-13 | 2009-10-21 | 住友電気工業株式会社 | 発光基板led素子 |
-
1999
- 1999-01-25 DE DE19902750A patent/DE19902750A1/de not_active Withdrawn
-
2000
- 2000-01-25 CN CNB008030936A patent/CN1166009C/zh not_active Expired - Lifetime
- 2000-01-25 JP JP2000595388A patent/JP4851648B2/ja not_active Expired - Fee Related
- 2000-01-25 WO PCT/DE2000/000201 patent/WO2000044053A1/de active Application Filing
- 2000-01-25 EP EP00907442.8A patent/EP1153442B1/de not_active Expired - Lifetime
- 2000-01-25 TW TW089101168A patent/TW478177B/zh not_active IP Right Cessation
-
2001
- 2001-07-25 US US09/915,985 patent/US6900466B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6900466B2 (en) | 2005-05-31 |
EP1153442B1 (de) | 2015-01-07 |
CN1338121A (zh) | 2002-02-27 |
JP4851648B2 (ja) | 2012-01-11 |
EP1153442A1 (de) | 2001-11-14 |
WO2000044053A1 (de) | 2000-07-27 |
JP2003529200A (ja) | 2003-09-30 |
US20020008244A1 (en) | 2002-01-24 |
TW478177B (en) | 2002-03-01 |
DE19902750A1 (de) | 2000-08-03 |
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Legal Events
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C06 | Publication | ||
C10 | Entry into substantive examination | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG Free format text: FORMER NAME: SIEMENS AG |
|
CP01 | Change in the name or title of a patent holder |
Address after: Regensburg, Germany Patentee after: OSRAM OPTO SEMICONDUCTORS GmbH Address before: Regensburg, Germany Patentee before: OSRAM OPTO SEMICONDUCTORS GmbH |
|
ASS | Succession or assignment of patent right |
Owner name: OSRAM AG Free format text: FORMER OWNER: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG Effective date: 20111229 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111229 Address after: Munich, Germany Patentee after: OSRAM AG Address before: Regensburg, Germany Patentee before: OSRAM OPTO SEMICONDUCTORS GmbH |
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CX01 | Expiry of patent term |
Granted publication date: 20040908 |
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CX01 | Expiry of patent term |