CN1197174C - 具有改善的颜色输出的白光照明系统 - Google Patents
具有改善的颜色输出的白光照明系统 Download PDFInfo
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Abstract
提供一种包括蓝LED和发光材料的白光照明系统。当连接LED颜色坐标和发光材料的颜色坐标的线近似于CIE色度图上的黑体轨迹时,该系统的颜色输出被改善。该LED的最大发光波长在470nm-500nm之间。发光材料可以是(Y1-x-zGdxCez)3Al5O12其中0.7>x>0.4,0.1>z>0。
Description
技术领域
本发明涉及一种白光照明系统,尤其是用于将发光二极管(LED)发出的蓝光转换为白光的陶瓷YAG:Ce:Gd的磷光体。
背景技术
发白光的LED用来作为液晶显示器中的背景光,是小型传统灯和荧光灯的替代品。如S.Nakamura等人在“蓝色激光二极管”(The BlueLaser Diode)10.4节216-221页(Springer 1997)中所述,白光LED是通过在发蓝光的半导体LED的输出表面上形成陶瓷磷光体层而制成的,该文献的内容在此引作参考。一般的,该蓝光LED是InGaN单量子阱LED,磷光体是铈掺杂的钇铝石榴石(“YAG”),Y3Al5O12:Ce3+。LED发出的蓝光激发磷光体,使其发出黄光。LED发出的蓝光透过磷光体,并与磷光体发出的黄光相混合。观看者将蓝光和黄光的混合视为白光。
蓝色LED、黄色YAG磷光体以及结合了LED和磷光体输出的白色的色度坐标可以在已知的CIE色度图上画图,如图1所示。色度坐标和CIE色度图在以下的几本课本中进行了详细解释,例如K.H.Butler的“荧光灯磷光体”的98-107页(宾夕法尼亚州立大学出版社1980)以及G.Blasse等人的“发光材料”的109-110页(Springer-Verlag 1994),这两篇文献的内容在此引作参考。如图1所示,先有技术的用于发白光的蓝LED的色度坐标在图1的CIE色度图的圈1内。换句话说,LED的色度坐标可以由圈1内的单个点来代表,该特定点的位置取决于该LED的最大发光波长。
YAG:Ce3+磷光体的色度坐标根据Gd在Y点阵位置的掺杂量和/或Ga在Al点阵位置的掺杂量而由图1中沿着线3的点来表示。例如,含有高含量Gd和/或低含量Ga掺杂剂的YAG磷光体的色度坐标可能在点5,而含有低含量Gd和/或高含量Ga掺杂剂的YAG磷光体的色度坐标可能在点7。含有中等含量Gd和/或Ga掺杂剂的YAG磷光体的色度坐标可能在沿着线3的点5和7之间的任何点,例如点9,11,13或15。
结合了蓝LED和YAG磷光体输出的色度坐标可以在图1的CIE色度图中的以线17和19为边界的扇形区域内变化。换句话说,LED和YAG磷光体输出的结合的色度坐标可以是图1中的以圈1、线3、线17和线19为边界的区域内的任何点,如Nakamura等人的课本中220页所述。但是Nakamura等人所述的LED-磷光体系统也存在一些缺点。
如图1所示,CIE色度图包含已知的黑体轨迹(Black Body Locus)(“BBL”),由线21表示。位于沿着BBL的色度坐标(即颜色点)遵从Planck等式:E(λ)=Aλ-5/(e(B/T)-1),其中E是发光强度,λ是发光波长,T是黑体的色温,A和B是常数。色温T的各种值,单位为K,如图1的BBL所示。另外,在BBL上或接近BBL的点或颜色坐标会产生使观察者感到愉快的白光。选择典型的白光照明光源,以具有在2500K-7000K色温范围内的BBL上的色度点。例如具有在BBL上的3900K色温的点的灯被设计为“自然白”,3000K的色温被设计成“标准暖白光”等。但是远离BBL的点或颜色坐标对于观察者来说不太被接受作为白光。因此图1所示的LED-磷光体系统含有的线17和19之间的许多点或色度坐标不能产生作为灯光应用的可接受的白光。
为了可以作为白光光源,色度坐标LED-磷光体系统必须在BBL上或接近BBL。LED-磷光体系统的颜色输出由于频率而变化很大,不可避免的,在磷光体制造过程中线路偏离理想的参数(即制造系统误差)。
例如,LED-磷光体系统的颜色输出对于磷光体的厚度非常敏感。如果磷光体过薄,从LED发出的多于所希望量的蓝光会穿透磷光体,结合的LED-磷光体系统的光输出会由于LED的输出占优势而呈现蓝色。在这种情况下,该系统输出波长的色度坐标会位于接近CIE色度图中LED色度坐标而远离BBL的位置。相反,如果磷光体过厚,那么低于所希望量的蓝LED光会穿透该厚磷光层。结合的LED-磷光体系统的光输出会由于LED的黄色输出占优势而呈现黄色。
因此,磷光体的厚度是影响该系统颜色输出的关键变量。遗憾的是,在LED-磷光体系统的大规模生产中很难控制磷光体的厚度,而且磷光体厚度的变化经常导致该系统输出对于灯光应用来讲不再适合或看起来不白(即微蓝或微黄),这就带来不可接受的低LED-磷光体系统的生产率。
图2表示的CIE色度图中,含有先有技术YAG:Ce3+磷光体层在点11的色度坐标,该磷光体层被置于具有点23的色度坐标的蓝LED之上。因此,该系统的色度坐标将位于图2沿着连接点11和点23的线25。如果磷光体层的厚度比产生白光所需要的薄,那么过多的蓝LED光会穿透磷光体层,则该系统光输出的色度坐标将接近LED坐标,例如点27,低于BBL。该系统的输出会略呈蓝色。如果磷光体层的厚度比产生白光所需要的厚,那么过少的LED光会被磷光体吸收,则该系统的色度坐标将接近磷光体的坐标,例如点29,高于BBL。该系统的输出会略呈黄色。只有在磷光体层的厚度基本正好等于产生可接受的白光所需要的厚度时,该系统的色度坐标才会接近或位于BBL上,在点31。因此,图2表示该系统彩色输出对于磷光体层厚度变化的敏感性。
另外,在先有技术的LED-磷光体系统中还具有以下缺陷。为了获得在不同色温所具有的颜色坐标位于或接近BBL的白光照明系统(即获得可接受的用于照明的白光的系统),需要改变磷光体的组成。例如,如果先有技术包括的磷光体其组成的颜色坐标位于图2的点11,那么含有该特殊的磷光体的LED-磷光体系统只是在约5800K-6800K的窄色温的范围内具有接近BBL的颜色坐标(即接近线27上的点31)。具有该特殊磷光体组成的系统对于超出上述范围的色温不会产生可接受的作为灯光的白光。因此,为了获得对5800K-6800K范围之外的所需要的色温能够产生可接受的作为灯光的白光的系统,必须改变磷光体组成。所需要的磷光体组成的改变增加了成本和制造工艺的复杂性。本发明希望克服或至少减少上述问题。
发明内容
根据本发明的一个方面,提供一种包括辐射源和发光材料的白光照明系统,其中辐射源的发光光谱表示CIE色度图上的第一点,发光材料的发光光谱代表CIE色度图上的第二点,连接第一点和第二点的第一线近似于CIE色度图上的黑体轨迹,第一线上的第三点和第四点与CIE色度图上的黑体轨迹的距离小于0.01y单位,第三点对应于第一色温,第四点对应于比第一色温大至少2000K的第二色温。
根据本发明的另一方面,提供一种包括辐射源和发光材料的白光照明系统的制备方法,包括选择CIE色度图上近似于黑体轨迹的第一线,形成辐射源,其中该辐射源的发光光谱由第一线上的第一点表示,并形成发光材料,其中该发光材料的发光光谱由第一线上的第二点表示,第一线上的第三点和第四点与CIE色度图上的黑体轨迹的距离小于0.01y单位,第三点对应于第一色温,第四点对应于比第一色温大至少2000K的第二色温。
附图说明
图1-2是先有技术照明系统的CIE色度图。
图3和5是根据本发明优选实施方案的照明系统的色度图。
图4和6是根据本发明优选实施方案的照明系统色度图中央部分的放大视图。
图7-9是本发明的照明系统的优选结构截面视图。
具体实施方式
鉴于先有技术中存在的问题,希望获得一种白光辐射源-发光材料的照明系统,其颜色输出对于该系统制造过程中的误差特别是发光材料厚度的误差或变化较不敏感。另外,希望获得一种白光辐射源-发光材料照明系统,它能够对于宽范围的色温产生作为灯光的可接受白光,而无需改变发光材料的组成。优选的辐射源包括LED。
本发明已经发现,当连接代表LED色度坐标的点和代表发光材料色度坐标的点的线近似于CIE色度图上的BBL时,LED-发光材料系统的颜色输出对于制造误差较不敏感。另外,这种系统能够对于宽范围的色温提供作为灯光的可接受白光,而无需改变发光材料的组成。
发光材料一词包括粉末形式的发光材料(磷光体)以及固体形式的发光材料(闪烁剂)。“LED色度坐标”一词是指LED发光光谱在CIE色度图上的坐标。“发光材料色度坐标”一词是指发光材料的发光光谱在CIE色度图上的坐标。
连接LED和发光材料色度坐标的线可能以许多不同的方式近似于BBL曲线。在本发明的一个优选实施方案中,与BBL曲线相交两次的线近似于BBL曲线,如图3和4所示。图4是图3中央部分的放大视图。例如线33可能在点35和37与BBL曲线相交两次。线33连接LED色度坐标39和发光材料色度坐标41。当然,线33只是作为示例之用。可能有许多其它的线连接不同的LED色度坐标和不同的发光材料色度坐标,并与BBL曲线相交两次。例如线的斜率会由于LED的最大发光波长以及由此的色度坐标沿着线43的变化而变化,或由于最大发光材料发光波长沿着线3的变化而变化。
被认为用于灯光应用的可接受白光光源一般在BBL的+/-0.01y单位内,优选在BBL的+/-0.005y的单位内。“y单位”是沿着CIE色度图的y轴的单位。与BBL曲线相交两次的线,例如线33,近似于BBL曲线,因为该线上的许多点距离BBL线0.01y单位或更小,优选为距离BBL线0.005y单位或更小。
例如,在线33上的约7000K-3500K之间的任何点对于观察者来说呈现白色,对应于可接受的白光光源,因为这些点位于线45和47之间,这两条线勾画出了CIE色度图上包括距离BBL曲线21为0.01y单位或更小的色度坐标的区域。
优选的,线33与BBL曲线相交两次,从而它含有对应于色温相距至少2000K的两个点,并距离BBL曲线21为0.01y单位或更小,如图4所示。例如,分别对应于约6000K和4000K的色温的点49和51位于线33上,距离BBL曲线21为0.01y单位或更小。线33上点49和51之间的点也位于线45和47之间,在距离BBL曲线0.01y单位之内,如图4所示。因此,所有的这些点对应于用于灯光应用的可接受白光光源。另外,通过选择具有线33上对应于约10800K和3800K(点53)的任何点的颜色坐标的系统,可以获得具有宽范围色温的白光照明系统,而无需改变发光材料的组成。
最优选的,线33与BBL曲线相交,使得它包含色温相距至少2000K的两个点,并且距离BBL曲线21为0.005y单位或更小,如图5所示。例如,分别对应于约6000K和4000K的色温的点49和51位于线33上,距离BBL曲线21为0.005y单位或更小。位于线33上点49和51之间的点也位于线55和57之间,在距离BBL曲线0.005y单位之内,如图5所示。因此,所有的这些点对应于用于灯光应用的可接受白光光源。
相反,位于沿着先有技术的线25的4000K和6000K之间的大部分颜色坐标不在距离BBL曲线0.01y单位的范围之内。例如,只有在先有技术的线25的约5200K(图4中的点59)和6400K(图4中的点61)之间的颜色坐标在距离BBL曲线0.01y单位的范围之内。另外,只有在先有技术的线25的约5770K(图5中的点63)和6780K(图5中的点64)之间的颜色坐标在距离BBL曲线0.005y单位的范围之内。相关色温在5200K以下的可接受的颜色坐标(点59以上)距离BBL曲线大于0.01y单位(即限定了距离BBL曲线0.01y单位范围的线45以上)。因此线25上点59以上的点不会对应于用于灯光用途的可接受白光。所以,与本发明的第一优选实施方案的系统相比,先有技术的系统对于制造误差更敏感。另外,先有技术的磷光体的组成必须被改变,以获得其颜色坐标对应于5200K-6400K范围之外的色温的系统,这对于灯光应用来说是可接受的。
在本发明的第二优选实施方案中,近似于BBL曲线的线与BBL曲线相切,如图6所示。例如线65与BBL曲线21相切。当然,线65只是示意之用。可能有许多其它的线将各种LED色度坐标与各种发光材料色度坐标相连接,这些线与BBL曲线相切。例如,线的斜率可能会因LED的最大发光波长沿着线43改变而改变,或因发光材料最大发光波长沿着线3的改变而改变。
与BBL曲线相切的线,例如线65,近似于BBL曲线,因为该线上的许多点距离BBL曲线0.01y单位或更少,优选为0.005y单位或更少。例如,线65上约6500K-3500K之间的任何点对应于可接受的白光,因为这些点位于线45和线47之间。优选的,线65与BBL曲线相切,从而它含有对应于相距至少2000K色温的两个点,这两个点距离BBL曲线21为0.01y单位或更少,优选为0.005y单位或更少。例如CIE色度图上线65的对应于4000K和6000K的点会位于图6的线47和线47之间。换句话说,线65上点66和67之间的所有点都在距离BBL曲线0.01y单位之内,即在线45和线47之间,如图6所示。因此,线65上点66和67之间的所有点都对应于可接受的白光。
在本发明的第三优选实施方案中,近似于BBL曲线的线含有对应于相距至少2000K色温的两个点,这两个点距离BBL曲线0.01y单位或更少。例如,如图6所示,线68含有两个点69和70,它们对应于6000K和4000K的色温,距离BBL曲线0.01y单位或更少(即点69和70位于线45和线47之间)。当然,线68只是示意之用。可能有许多其它的线将各种LED色度坐标与各种发光材料色度坐标相连接,这些线含有相距至少2000K色温并距离BBL曲线0.01y单位或更少的两个点。例如,线的斜率可能会因LED的最大发光波长沿着线43改变而改变,或因发光材料最大发光波长沿着线3的改变而改变。另外,近似于BBL曲线的线可能会位于BBL曲线21和线47之间。
应当指出的是,线可能会以第一、第二和第三实施方案所述方式之外的其它方式来近似于BBL曲线。优选的,LED-发光材料系统发出的辐射的CIE颜色坐标其范围在x=0.31和y=0.33(T=6700K或“日光”)至x=0.44和y=0.4(T=3000K或“标准暖白光”)。但是,如果需要,该系统发出的辐射会具有其它被认为对应于白色的坐标。
在本发明的第一优选方面,发光材料包括(A1-xGdx)3D5E12:Ce,其中A包括Y、Lu、Sm和La中的至少一种,D包括Al、Ga、Sc和In中的至少一种,E包括氧,x>0.4。在本发明的第二优选方面,发光二极管优选包括最大发光波长大于470nm的发光二极管。优选的,最大发光波长在470-500nm之间,最优选的是在475-480nm之间,例如478nm。在本发明的第三优选方面,白光照明系统含有第一优选方面的发光材料和第二优选方面的发光二极管。
在第一优选方面的发光材料中,Ce离子作为活化离子,负责从发光材料中发出黄光。Gd离子影响该照明系统输出的颜色(即颜色坐标)。本发明已经确定当Gd离子的原子比例(即x)大于0.4时,从该发光材料发出的光的颜色坐标使得将这些坐标与LED颜色坐标相连的线近似于BBL曲线。例如,(A1-xGdx)3D5E12:Ce发光材料在x大于0.4时发出的光其颜色坐标近似位于图1的点5和15之间。与含有少量或没有Gd的发光材料相比,高的Gd含量将发光材料的效率降低了几个百分点。但是,通过提高Gd含量,可实现的照明系统生产率的提高抵消了该系统效率的少量下降。
发光材料优选不含有或含有痕量的Ga,包括(Y1-x-zGdxCez)3Al5O12,其中0.7>x>0.4,0.1>z>0。但是,如果需要“x”的值可以提高至0.8。如果在发光材料的制造过程中使用了氟基的助熔剂例如氟化铵、YF3或AlF3,该发光材料可以含有其它元素,例如少量的氟。最优选的,该发光材料包括(Y0.37Gd0.6Ce0.03)3Al5O12磷光体。但是如果需要,该发光材料可以包括闪烁剂。
第二优选方面的LED可以包括最大发光波长大于470nm的任何LED,当其发出的辐射直接照在发光材料上时能够产生白光。换句话说,LED可以包括基于任何适合的III-V、II-VI或IV-IV半导体层的半导体二极管。优选的,该LED可以含有包括GaN、ZnSe或SiC的至少一个半导体层。最优选的,LED包括具有InGaNp-n结的单量子阱LED,该单量子阱LED最大发光波长大于470nm但小于500nm。但是,也可以使用多量子阱LED或没有量子阱的LED。最大发光波长在475-480nm之间,例如478nm是最优选的。沿着图3和图5中的线43的在470nm至500nm之间的最大发光波长使得连接LED颜色坐标和发光材料颜色坐标的线近似于BBL曲线。
根据本发明第三优选方面,发光材料最优选包括(A1-xGdx)3D5E12:Ce,其中x>0.4,LED最大发光波长大于470nm,以使得连接发光材料和LED的颜色坐标的线近似于BBL曲线,如上第一、第二和第三优选实施方案所述。另外,其光输出颜色坐标如图3-6所示的发光材料包括(A1-xGdx)3D5E12:Ce,其中x>0.4,其颜色坐标如图3-6所示的LED的最大发光波长大于470nm,以使得图3-6中线33、65和68近似于BBL曲线21。
相反,先有技术的LED-磷光体白光照明系统采用了带有优选最大发光波长至多不过为465nm的蓝LED,如图1和2的圈1所示。另外,高Gd含量的YAG:Ce3+磷光体在先有技术中不是优选的,因为与低Gd含量的磷光体相比,高的Gd含量将系统的效率降低了几个百分点。在这种先有技术的系统中,连接磷光体和LED颜色坐标的线不近似于BBL曲线。
如表1所示的根据本发明优选方面的照明系统与表2所示的Nakamura课本中披露的先有技术的照明系统相比较,如下所示:
表1
系统=发光波长为478nm的LED+(Y0.37Gd0.6Ce0.03)3Al5O12磷光体
色温 | 与BBL的颜色坐标距离(Y单位) |
3800K | 0.005 |
4000K | 0.003 |
5000K | -0.003 |
6000K | -0.004 |
7000K | -0.002 |
8000K | 00009 |
9000K | 0.002 |
10,000K | 0.004 |
10,800K | 0.005 |
表2
先有技术系统=
发光波长为460nm的LED+(Y0.97Ce0.03)3Al5O12磷光体
色温 | 与BBL的颜色坐标距离(Y单位) |
4000K | 0.072 |
5000K | 0.020 |
5800K | 0.005 |
6000K | 0.002 |
6800K | -.0005 |
如表1和表2所计算的,根据本发明优选实施方案的示例性系统,在与先有技术的色温范围(约5800K-6800K)相比更宽的色温范围(约3800K-10800K)内,所发出的光的颜色坐标距离BBL在0.01y单位之内,优选在0.005y单位之内。因此,根据本发明优选实施方案的系统与先有技术的系统相比,对于制造误差以及发光材料厚度的变化会较不敏感。这使得根据本发明制造的系统与先有技术的系统相比其生产率得到改善。
例如,假设由系统发出的光的所希望的颜色对应于图4中接近点31和点49的颜色坐标。为了获得所希望的颜色,发光材料的厚度应当等于预定值。但是,由于制造误差,所制成的发光材料的厚度可能大于该预定值。
大于所希望的发光材料厚度预定值会导致该系统颜色坐标沿着连接发光材料颜色坐标和LED颜色坐标的线向发光材料的颜色坐标(即向着图3中的线3)偏移。例如,根据第一优选实施方案的系统的颜色坐标会从点4 9沿着线33向图3中线3的点41偏移。类似的,先有技术系统的颜色坐标会从点49沿着线25向着线3上的点11偏移。
如图3和4所示,第一优选实施方案的系统在保持可接受的白光系统颜色输出的同时,在发光材料的厚度偏离预定值方面允许比先有技术有更大的偏差。例如,在仍然保持可接受的白色系统输出的同时(即系统颜色坐标保持在线45和线47之间),厚度的偏差可能使第一优选实施方案的系统的颜色坐标全部偏移至线33和线45相交的点53。相反,在仍然保持白色系统输出是适合于灯光应用的同时,厚度的偏差可能使先有技术的系统的颜色坐标只偏移至点59。厚度的任何更大的偏差会导致先有技术的系统的输出变得不再适合于灯光应用(即系统颜色坐标会位于点59和点11之间,在图3-4中的线45以上)。
优于先有技术系统的同样优势也可以从本发明的其它实施方案获得,并且也是在发光材料的厚度低于预定值的情况下得到的。在这种情况下,颜色坐标只会向左侧偏移(朝向线43)而不是向右侧偏移(朝向线3)。另外,根据本发明优选实施方案的系统能够相对于先有技术系统对更宽的色温范围提供可接受的用于灯光用途的白光,而无需改变发光材料的组成。
根据本发明优选方面的白光照明系统可能会有各种不同的结构。一种优选的结构示意性地表示在图7中。该照明系统包括LED片71和与该LED片电连接的导线73。导线73可以包括被较厚的导线框75支撑的细线圈,或者导线可能包括自支撑的电极,导线框可以被省略。导线73向LED片71提供电流,使得LED片71发出辐射,例如波长在470nm-500nm的蓝光或蓝绿光。
LED片71优选被密封在壳77中,该壳将LED片和密封材料79密闭起来。壳77可以是例如透明玻璃或塑料。密封材料可以是,例如环氧或聚合物材料,例如有机硅树脂。但是壳或密封材料可以被省略以简化处理。另外,壳可以包括不透明的底部和透明的顶部包括玻璃、塑料或开口。另外,壳77可以是图中所示形状之外的所希望的任何形状。LED片71可以被例如导线框75、被自支撑电极、被壳77的底部、或被安装在壳或导线框的轴承座所支撑。
照明系统的第一优选结构包括发光材料81。该发光材料包括在LED附近形成的(A1-xGdx)3D5E12:Ce磷光体或闪烁剂,其中x>0.4。如果该发光材料81是磷光体,那么该磷光体会被涂布在LED片71的发光表面上方或就在其上。如果发光材料81是固体闪烁剂,那么该闪烁剂会被附着在LED片71的发光表面或在其上方。壳77和密封剂79应当都是透明的,以使得白光83能够穿透那些元件。
图8表示本发明的第二优选结构。图8的结构大致与图7相同,但是发光材料81散布在密封材料79内,而不是在LED片71的上方形成。发光材料81可以包括散布在密封材料79的单个区域或密封材料的整个体积内的磷光体粉末。由LED片71发出的蓝光或蓝绿光85与磷光体81发出的黄光相混合呈现为白光83。
图9表示本发明的第三优选结构。图9的结构大致与图7相同,但是发光材料81被涂布在壳77上,而不是在LED片71的上方形成。发光材料81优选是涂布在壳77的内表面上的磷光体,尽管如果需要发光材料可以被涂布在壳的外表面上。磷光体81可以被涂布在壳的整个表面上,或只涂布在壳表面的顶部。由LED片71发出的蓝光或蓝绿光85与磷光体81发出的黄光相混合呈现为白光83。
或者,壳77可以由发光材料以闪烁剂的形式形成。当然,图7-9的实施方案可以结合起来,发光材料可以位于任何两个或所有三个位置上,或在任何其它合适的位置上,例如与壳相分离或集成在LED内。
根据本发明的第四优选实施方案,白光照明系统可以由如下方法形成。首先,选择近似于BBL的线。例如,根据本发明第一、第二或第三优选实施方案的近似于BBL的线。但是,也可以选择其它近似于BBL的线。基于所选定的线,形成其发光光谱由近似于BBL的线上的点表示的LED。然后,基于所选定的线,形成其发光光谱由近似于BBL的线上的另一个点表示的发光材料。在第四优选实施方案的方法中,“被形成”或“形成”一词是指制造LED和/或发光材料,并将已有的LED和/或已有的发光材料置于白光照明系统中。例如,通过选择或购买已有的LED并将该LED置于白光照明系统中而使LED形成为系统的一部分,其中LED的最大发光波长由近似于BBL的线上的点表示。LED片可以被放置在壳内并与导线相连接。另外,可以基于近似BBL的一个线而形成多个LED和/或发光材料。例如在选择近似BBL的一个线后,基于所选定的一个线,可以制造或选定多个LED和/或发光材料,并将其放置在照明系统内。
发光材料的磷光体形式可以由例如任何陶瓷粉末方法而制成,例如液相(熔融)方法或固态方法。优选的,制造磷光体的方法包括以下步骤。首先,在坩埚或其它合适的容器内,例如球磨机中将磷光体材料的原材料混合,以形成第一复合粉末。优选的磷光体原材料包括化学计量的氧化铈CeO2,氧化钆GdO2,氧化钇Y2O3和氧化铝Al2O3。如果需要,可以添加改善磷光体的亮度和效率的助熔剂,例如氟化铵、氟化钇YF3和/或氟化铝AlF3,优选每摩尔所制造的磷光体中以0.02-0.2摩尔百分比的浓度添加。助熔剂的使用使得少量的残余氟被引入到YAG:Ce:Gd磷光体中。或者,稀土元素可以从酸溶液中被共析出而形成复合稀土氧化物粉末,然后将其与氧化铝粉末并任选与例如AlF3的助熔剂混合。
然后将共混的第一粉末在熔炉或坩埚中在1000-1600℃烧结约2-10小时,优选在1500℃烧结6小时,以形成烧结体或块。如果使用AlF3助熔剂,烧结优选在还原气氛例如氮氢混合气或碳气下进行。然后将烧结体研磨以形成第二粉末。优选的,将第二粉末研磨直至其平均颗粒尺寸约为6微米。第二粉末优选以丙醇或水作为研磨介质而进行研磨,随后进行干燥。但是,其它研磨介质例如甲醇也可以用来代替。
然后将第二研磨粉末置于白光照明系统中。该第二粉末可以被放置在LED片上方,散布在密封材料中或被涂布在壳的表面上,如本发明以上的第一、第二和第三优选结构中所述。优选的,使用第二粉末和液体的悬浮物来涂布LED片或壳表面。该悬浮物可任选含有溶剂中的粘合剂。优选的,该粘合剂包括溶于例如醋酸丁酯、醋酸戊酯、甲基丙醇或丙二醇单甲醚醋酸酯溶剂中的有机材料,例如硝化纤维素,浓度为90-95%,含有1-2%的变性乙醇。该粘合剂增强了粉末颗粒彼此之间以及和LED或和壳之间的粘附性。但是如果需要,可以省略粘合剂以简化处理。涂布之后,干燥悬浮物,并可以加热使粘合剂蒸发。所涂布的第二粉末在其干燥除去溶剂之后作为磷光体。
如果磷光体是被散布在密封材料之中的,那么磷光体可以被作为第二粉末添加到聚合物前体中,然后该聚合物前体可以被固化以使聚合物材料成为固体。或者,第二粉末可以被混合在环氧密封剂中。也可以使用其它磷光体散布方法。
发光材料的闪烁剂形式可以通过任何闪烁剂制造方法形成。例如,闪烁剂可以由Czochralski、浮区法或其它晶体生长方法来制备。然后该闪烁剂被放置在LED片的上方或用作壳或壳的顶部。
以上已经描述了白光照明系统的辐射源是半导体发光二极管。但是本发明的辐射源不限于半导体发光二极管。例如,白光照明系统可以包括激光二极管、有机发光二极管(OLED)、等离子显示器或荧光灯。该辐射源可以包括响应电极发出的带电粒子的碰撞而产生辐射放电的气体。该气体发出的辐射入射到涂布在系统一部分的发光材料上,使得发光材料发出黄光。该黄光与气体产生的辐射混合,对观察者来说呈现白光。
另外,上述的优选系统含有一个辐射源和一个发光材料。但是如果需要,可以在系统中使用多个辐射源和/或具有不同的发光颜色坐标的多个发光材料,以改善所发出的白光或将所发出的白光结合成为不同颜色的光。例如,白光系统可以与显示器中的红、绿和/或蓝发光二极管结合使用。
以上已经描述了本发明的优选实施方案。但是,这些描述并不意味着是对本发明范围的限制。因此,对于该领域的技术人员来说可以有各种改动、适应性变化或替换,而不会脱离权利要求中的范围和精神。
Claims (34)
1.一种白光照明系统包括辐射源和发光材料,其中:
辐射源的发光光谱代表CIE色度图上的第一点;
发光材料的发光光谱代表CIE色度图上的第二点;
连接第一点和第二点的第一线近似于CIE色度图上的黑体轨迹;
第一线上的第三点和第四点与CIE色度图上的黑体轨迹的距离小于0.01y单位;
第三点对应于第一色温;
第四点对应于比第一色温大至少2000K的第二色温。
2.权利要求1的系统,其中辐射源包括发光二极管。
3.权利要求2的系统,其中第一线与黑体轨迹相交2次。
4.权利要求2的系统,其中第一线与黑体轨迹相切。
5.权利要求1的系统,其中第一线上的第三点和第四点与CIE色度图上的黑体轨迹的距离小于0.005y单位。
6.权利要求5的系统,其中第一色温是4000K,第二色温是6000K。
7.权利要求2的系统,其中
a)发光材料包括
(A1-xGdx)3D5E12:Ce,
其中A包括Y、Lu、Sm和La中的至少一种;
D包括Al、Ga、Sc和In中的至少一种;
E包括氧;
x>0.4;
b)发光二极管的最大发光波长大于470nm。
8.权利要求7的系统,其中发光材料包括(Y1-x-zGdxCez)3Al5O12;0.7>x>0.4;0.1>z>0。
9.权利要求8的系统,其中发光材料还包括氟。
10.权利要求8的系统,其中发光材料包括(Y0.37Gd0.6Ce0.03)3Al5O12磷光体。
11.权利要求7的系统,其中发光二极管包括至少一个包括GaN、ZnSe或SiC的半导体层,其最大发光波长大于470nm,但是小于500nm。
12.权利要求11的系统,其中发光二极管的最大发光波长是475nm-480nm。
13.权利要求11的系统,其中发光二极管包括InGaN p-n结。
14.权利要求7的系统,其中
发光材料包括(Y1-x-zGdx Cez)3Al5O12;0.7>x>0.4;0.1>z>0;
发光二极管的最大发光波长大于470nm,但是小于500nm。
15.权利要求14的系统,还包括容纳发光二极管的壳以及壳和发光二极管之间的密封材料,其中发光材料可以是下述任意一种情况或其组合:
a)涂布在发光二极管表面上方的磷光体;
b)散布在密封材料中的磷光体;
c)涂布在壳上的磷光体;
d)叠加在发光二极管表面上的闪烁剂。
16.权利要求2的系统,其中该系统发出的辐射近似于CIE色度图上对于4000K-6000K色温范围内基本与发光材料的厚度无关的黑体轨迹。
17.权利要求2的系统,其中该系统发出的辐射的CIE颜色坐标在x=0.31和y=0.33至x=0.44和y=0.4的范围内。
18.权利要求1的系统,其中辐射源包括激光二极管、有机发光二极管或在等离子显示器或在荧光灯中放电的辐射气体中的一种。
19.一种含有辐射源和发光材料的白光照明系统的制造方法,包括:
选择近似于CIE色度图上黑体轨迹的第一线;
形成辐射源,其中该辐射源的发光光谱由第一线上的第一点表示;
形成发光材料,其中该发光材料的发光光谱由第一线上的第二点表示;
第一线上的第三点和第四点与CIE色度图上的黑体轨迹的距离小于0.01y单位;
第三点对应于第一色温;
第四点对应于比第一色温大至少2000K的第二色温。
20.权利要求19的方法,其中辐射源包括发光二极管。
21.权利要求20的方法,其中第一线与黑体轨迹相交2次。
22.权利要求20的方法,其中第一线与黑体轨迹相切。
23.权利要求19的方法,其中第一线上的第三点和第四点与CIE色度图上的黑体轨迹的距离小于0.005y单位。
24.权利要求23的方法,其中第一色温是4000K,第二色温是6000K。
25.权利要求20的方法,其中
a)发光材料包括
(A1-xGdx)3D5E12:Ce,
其中A包括Y、Lu、Sm和La中的至少一种;
D包括Al、Ga、Sc和In中的至少一种;
E包括氧;
x>0.4;
b)发光二极管的最大发光波长大于470nm,但是小于500nm。
26.权利要求25的方法,其中发光材料包括(Y1-X-ZGdXCeZ)3Al5O12磷光体,0.7>X>0.4;0.1>Z>0;以及
发光二极管的最大发光波长大于470nm,但是小于500nm。
27.权利要求26的方法,其中发光材料包括(Y0.37Gd0.6Ce0.03)3Al5O12磷光体,以及发光二极管包括最大发光波长在475nm-480nm之间的InGaN p-n结。
28.权利要求25的方法,其中形成发光材料的步骤包括:
混合Y2O3粉末、CeO2粉未、Al2O3粉末、GdO2粉末和AlF3助熔剂,以形成第一粉末;
在还原气氛中烧结第一粉末以形成烧结体;
将烧结体转化为第二粉末。
29.权利要求28的方法,其中
形成发光二极管的步骤包括:
将发光二极管放置在壳内;
用密封材料填充壳;
其中形成发光材料的步骤还包括:
a)在发光二极管的表面上方涂布第二粉末和溶剂的悬浮物,并干燥该悬浮物;
b)将第二粉末散布在密封材料中;或
c)在壳上涂布第二粉末和溶剂的悬浮物,并干燥该悬浮物。
30.权利要求20的方法,其中该系统发出的辐射近似于CIE色度图上对于4000K-6000K色温范围内基本与发光材料的厚度无关的黑体轨迹。
31.权利要求20的方法,其中形成发光二极管的步骤包括:
选择已有的其发光光谱由第一线上的第一点表示的发光二极管;
将该发光二极管放置在照明系统内。
32.权利要求20的方法,其中形成发光材料的步骤包括:
选择已有的其发光光谱由第一线上的第二点表示的发光材料;
将该发光材料放置在照明系统内。
33.权利要求20的方法,还包括基于选定近似于黑体轨迹的第一线的单个步骤而形成多个发光二极管和多个发光材料中的至少一个。
34.权利要求19的方法,其中辐射源包括有机发光二极管、激光二极管、或者在等离子显示器或在荧光灯中放电的辐射气体中的一种。
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2001
- 2001-03-14 TW TW090105974A patent/TW494582B/zh active
- 2001-03-15 CA CA002340968A patent/CA2340968A1/en not_active Abandoned
- 2001-03-19 EP EP01302525A patent/EP1139440A3/en not_active Withdrawn
- 2001-03-26 JP JP2001086528A patent/JP2001320094A/ja not_active Withdrawn
- 2001-03-27 CN CNB011120703A patent/CN1197174C/zh not_active Expired - Fee Related
- 2001-03-27 KR KR1020010015936A patent/KR100912204B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101412026B (zh) * | 2008-10-28 | 2012-07-25 | 广州市鸿利光电股份有限公司 | 一种白光led分选方法 |
Also Published As
Publication number | Publication date |
---|---|
US6538371B1 (en) | 2003-03-25 |
CA2340968A1 (en) | 2001-09-27 |
JP2001320094A (ja) | 2001-11-16 |
CN1319899A (zh) | 2001-10-31 |
KR100912204B1 (ko) | 2009-08-14 |
EP1139440A2 (en) | 2001-10-04 |
EP1139440A3 (en) | 2007-03-28 |
TW494582B (en) | 2002-07-11 |
KR20010090583A (ko) | 2001-10-18 |
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