CN116391458A - 热电转换组件的制造方法 - Google Patents

热电转换组件的制造方法 Download PDF

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Publication number
CN116391458A
CN116391458A CN202180073854.0A CN202180073854A CN116391458A CN 116391458 A CN116391458 A CN 116391458A CN 202180073854 A CN202180073854 A CN 202180073854A CN 116391458 A CN116391458 A CN 116391458A
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CN
China
Prior art keywords
thermoelectric conversion
conversion material
chip
type thermoelectric
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180073854.0A
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English (en)
Chinese (zh)
Inventor
关佑太
加藤邦久
森田亘
升本睦
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Lintec Corp
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Lintec Corp
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Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of CN116391458A publication Critical patent/CN116391458A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN202180073854.0A 2020-10-30 2021-10-28 热电转换组件的制造方法 Pending CN116391458A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020182610 2020-10-30
JP2020-182610 2020-10-30
PCT/JP2021/039751 WO2022092178A1 (ja) 2020-10-30 2021-10-28 熱電変換モジュールの製造方法

Publications (1)

Publication Number Publication Date
CN116391458A true CN116391458A (zh) 2023-07-04

Family

ID=81382558

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180073854.0A Pending CN116391458A (zh) 2020-10-30 2021-10-28 热电转换组件的制造方法

Country Status (5)

Country Link
US (1) US12114568B2 (https=)
JP (1) JP7770335B2 (https=)
CN (1) CN116391458A (https=)
TW (1) TWI895533B (https=)
WO (1) WO2022092178A1 (https=)

Family Cites Families (26)

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JP2005019767A (ja) * 2003-06-27 2005-01-20 Yamaha Corp 熱電変換モジュールの製造方法
TWI405361B (zh) * 2008-12-31 2013-08-11 財團法人工業技術研究院 熱電元件及其製程、晶片堆疊結構及晶片封裝結構
JP2010161297A (ja) * 2009-01-09 2010-07-22 Toshiba Corp 熱電変換モジュールおよびその製造方法
JP2011176073A (ja) * 2010-02-24 2011-09-08 Aisin Seiki Co Ltd 高密度熱電変換素子の製造方法
JP5928599B2 (ja) * 2012-09-19 2016-06-01 富士通株式会社 発電装置、測定装置及び測定システム
JP6047413B2 (ja) * 2013-01-29 2016-12-21 富士フイルム株式会社 熱電発電モジュール
KR101493797B1 (ko) * 2013-10-18 2015-02-17 한국과학기술원 메쉬형 기판을 이용한 플랙시블 열전소자 및 그 제조방법
KR20160028697A (ko) * 2014-09-04 2016-03-14 한국전기연구원 벌크형 소면적 열전모듈 및 그 제조방법
KR20170019109A (ko) * 2015-08-11 2017-02-21 홍익대학교 산학협력단 열전모듈의 제조방법 및 이에 의해 제조된 열전모듈
JP6750404B2 (ja) 2015-09-18 2020-09-02 三菱マテリアル株式会社 熱電変換モジュール及び熱電変換装置並びに熱電変換モジュールの製造方法
WO2017052646A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Island transfer for optical, piezo and rf applications
KR101989908B1 (ko) * 2015-10-27 2019-06-17 주식회사 테그웨이 유연 열전소자 및 이의 제조방법
JP6709040B2 (ja) * 2015-11-18 2020-06-10 日東電工株式会社 半導体装置の製造方法
WO2018139475A1 (ja) * 2017-01-27 2018-08-02 リンテック株式会社 フレキシブル熱電変換素子及びその製造方法
CN110494997A (zh) * 2017-03-30 2019-11-22 琳得科株式会社 热电转换模块及其制造方法
JP7200616B2 (ja) * 2017-12-06 2023-01-10 三菱マテリアル株式会社 絶縁伝熱基板、熱電変換モジュール、及び、絶縁伝熱基板の製造方法
JP7346427B2 (ja) * 2018-08-28 2023-09-19 リンテック株式会社 熱電変換材料のチップの製造方法及びその製造方法により得られたチップを用いた熱電変換モジュールの製造方法
JP7543140B2 (ja) * 2018-10-05 2024-09-02 リンテック株式会社 熱電変換材料のチップ
WO2020196709A1 (ja) * 2019-03-28 2020-10-01 リンテック株式会社 熱電変換材料のチップの製造方法

Also Published As

Publication number Publication date
TW202226625A (zh) 2022-07-01
US20240023441A1 (en) 2024-01-18
WO2022092178A1 (ja) 2022-05-05
US12114568B2 (en) 2024-10-08
JP7770335B2 (ja) 2025-11-14
JPWO2022092178A1 (https=) 2022-05-05
TWI895533B (zh) 2025-09-01

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