CN1162834A - Soi基片及其制造方法 - Google Patents
Soi基片及其制造方法 Download PDFInfo
- Publication number
- CN1162834A CN1162834A CN96123934A CN96123934A CN1162834A CN 1162834 A CN1162834 A CN 1162834A CN 96123934 A CN96123934 A CN 96123934A CN 96123934 A CN96123934 A CN 96123934A CN 1162834 A CN1162834 A CN 1162834A
- Authority
- CN
- China
- Prior art keywords
- film
- oxide
- silicon
- impurity
- soi substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000012212 insulator Substances 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 239000012535 impurity Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000005388 borosilicate glass Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 2
- 239000002019 doping agent Substances 0.000 abstract 4
- 239000002245 particle Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- -1 oxonium ion Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 102000000584 Calmodulin Human genes 0.000 description 1
- 108010041952 Calmodulin Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950069481A KR970052024A (ko) | 1995-12-30 | 1995-12-30 | 에스 오 아이 기판 제조방법 |
KR69481/95 | 1995-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1162834A true CN1162834A (zh) | 1997-10-22 |
CN1078739C CN1078739C (zh) | 2002-01-30 |
Family
ID=19448473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96123934A Expired - Fee Related CN1078739C (zh) | 1995-12-30 | 1996-12-30 | Soi基片及其制造方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH1032321A (zh) |
KR (1) | KR970052024A (zh) |
CN (1) | CN1078739C (zh) |
DE (1) | DE19653632B4 (zh) |
GB (1) | GB2309584A (zh) |
TW (1) | TW310458B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100389477C (zh) * | 2002-08-10 | 2008-05-21 | 朴在仅 | 制造纳米soi晶片的方法及由该法制造的纳米soi晶片 |
CN101916761A (zh) * | 2010-07-20 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | 一种soi埋氧层下的导电层及其制作工艺 |
CN110828456A (zh) * | 2018-08-08 | 2020-02-21 | 英飞凌科技奥地利有限公司 | 用于在功率器件中减小衬底掺杂剂向外扩散的氧插入的Si层 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100359681B1 (ko) * | 2000-03-15 | 2002-11-04 | 오정훈 | 장신구용 금속모조보석 제작방법 |
US6541861B2 (en) | 2000-06-30 | 2003-04-01 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure |
WO2003103057A1 (en) * | 2002-05-31 | 2003-12-11 | Advanced Micro Devices, Inc. | Diffusion barrier layer in semiconductor substrates to reduce copper contamination from the back side |
JP5194508B2 (ja) * | 2007-03-26 | 2013-05-08 | 信越半導体株式会社 | Soiウエーハの製造方法 |
JP2016100566A (ja) * | 2014-11-26 | 2016-05-30 | トヨタ自動車株式会社 | Soiウエハの製造方法及びsoiウエハ |
US9515072B2 (en) * | 2014-12-26 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company Ltd. | FinFET structure and method for manufacturing thereof |
CN105392093B (zh) * | 2015-12-03 | 2018-09-11 | 瑞声声学科技(深圳)有限公司 | 麦克风芯片的制造方法 |
CN105392089A (zh) * | 2015-12-03 | 2016-03-09 | 瑞声声学科技(深圳)有限公司 | 复合层结构及其制造方法 |
EP3758050A1 (en) * | 2016-03-07 | 2020-12-30 | GlobalWafers Co., Ltd. | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4641173A (en) * | 1985-11-20 | 1987-02-03 | Texas Instruments Incorporated | Integrated circuit load device |
US5387555A (en) * | 1992-09-03 | 1995-02-07 | Harris Corporation | Bonded wafer processing with metal silicidation |
US5362667A (en) * | 1992-07-28 | 1994-11-08 | Harris Corporation | Bonded wafer processing |
JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
-
1995
- 1995-12-30 KR KR1019950069481A patent/KR970052024A/ko not_active Application Discontinuation
-
1996
- 1996-12-19 TW TW085115677A patent/TW310458B/zh active
- 1996-12-20 DE DE19653632A patent/DE19653632B4/de not_active Expired - Fee Related
- 1996-12-26 JP JP8357094A patent/JPH1032321A/ja active Pending
- 1996-12-27 GB GB9626954A patent/GB2309584A/en not_active Withdrawn
- 1996-12-30 CN CN96123934A patent/CN1078739C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100389477C (zh) * | 2002-08-10 | 2008-05-21 | 朴在仅 | 制造纳米soi晶片的方法及由该法制造的纳米soi晶片 |
CN101916761A (zh) * | 2010-07-20 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | 一种soi埋氧层下的导电层及其制作工艺 |
CN110828456A (zh) * | 2018-08-08 | 2020-02-21 | 英飞凌科技奥地利有限公司 | 用于在功率器件中减小衬底掺杂剂向外扩散的氧插入的Si层 |
Also Published As
Publication number | Publication date |
---|---|
GB2309584A (en) | 1997-07-30 |
DE19653632A1 (de) | 1997-07-03 |
GB9626954D0 (en) | 1997-02-12 |
KR970052024A (ko) | 1997-07-29 |
TW310458B (zh) | 1997-07-11 |
JPH1032321A (ja) | 1998-02-03 |
CN1078739C (zh) | 2002-01-30 |
DE19653632B4 (de) | 2004-08-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HYNIX SEMICONDUCTOR INC. Free format text: FORMER NAME OR ADDRESS: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: Hairyoksa Semiconductor Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hyundai Electronics Industries Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: MAGNACHIP CO., LTD. Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC. Effective date: 20070601 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070601 Address after: North Chungcheong Province Patentee after: Magnachip Semiconductor Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hairyoksa Semiconductor Co., Ltd. |
|
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |