GB2309584A - Forming S.O.I. substrates - Google Patents

Forming S.O.I. substrates Download PDF

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Publication number
GB2309584A
GB2309584A GB9626954A GB9626954A GB2309584A GB 2309584 A GB2309584 A GB 2309584A GB 9626954 A GB9626954 A GB 9626954A GB 9626954 A GB9626954 A GB 9626954A GB 2309584 A GB2309584 A GB 2309584A
Authority
GB
United Kingdom
Prior art keywords
oxide film
layer
wafer
doped oxide
diffusion preventing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9626954A
Other languages
English (en)
Other versions
GB9626954D0 (en
Inventor
Jae Kap Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9626954D0 publication Critical patent/GB9626954D0/en
Publication of GB2309584A publication Critical patent/GB2309584A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
GB9626954A 1995-12-30 1996-12-27 Forming S.O.I. substrates Withdrawn GB2309584A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069481A KR970052024A (ko) 1995-12-30 1995-12-30 에스 오 아이 기판 제조방법

Publications (2)

Publication Number Publication Date
GB9626954D0 GB9626954D0 (en) 1997-02-12
GB2309584A true GB2309584A (en) 1997-07-30

Family

ID=19448473

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9626954A Withdrawn GB2309584A (en) 1995-12-30 1996-12-27 Forming S.O.I. substrates

Country Status (6)

Country Link
JP (1) JPH1032321A (zh)
KR (1) KR970052024A (zh)
CN (1) CN1078739C (zh)
DE (1) DE19653632B4 (zh)
GB (1) GB2309584A (zh)
TW (1) TW310458B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742356A (zh) * 2014-12-26 2016-07-06 台湾积体电路制造股份有限公司 Finfet结构及其制造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100359681B1 (ko) * 2000-03-15 2002-11-04 오정훈 장신구용 금속모조보석 제작방법
US6541861B2 (en) 2000-06-30 2003-04-01 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure
WO2003103057A1 (en) * 2002-05-31 2003-12-11 Advanced Micro Devices, Inc. Diffusion barrier layer in semiconductor substrates to reduce copper contamination from the back side
KR100511656B1 (ko) * 2002-08-10 2005-09-07 주식회사 실트론 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼
JP5194508B2 (ja) * 2007-03-26 2013-05-08 信越半導体株式会社 Ｓｏｉウエーハの製造方法
CN101916761B (zh) * 2010-07-20 2012-07-04 中国科学院上海微系统与信息技术研究所 一种soi埋氧层下的导电层及其制作工艺
JP2016100566A (ja) * 2014-11-26 2016-05-30 トヨタ自動車株式会社 Ｓｏｉウエハの製造方法及びｓｏｉウエハ
CN105392089A (zh) * 2015-12-03 2016-03-09 瑞声声学科技(深圳)有限公司 复合层结构及其制造方法
CN105392093B (zh) * 2015-12-03 2018-09-11 瑞声声学科技(深圳)有限公司 麦克风芯片的制造方法
EP3427293B1 (en) * 2016-03-07 2021-05-05 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
US10741638B2 (en) * 2018-08-08 2020-08-11 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0553860A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Semiconductor substrate and process for preparing the same
US5362667A (en) * 1992-07-28 1994-11-08 Harris Corporation Bonded wafer processing
US5387555A (en) * 1992-09-03 1995-02-07 Harris Corporation Bonded wafer processing with metal silicidation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641173A (en) * 1985-11-20 1987-02-03 Texas Instruments Incorporated Integrated circuit load device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0553860A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Semiconductor substrate and process for preparing the same
US5362667A (en) * 1992-07-28 1994-11-08 Harris Corporation Bonded wafer processing
US5387555A (en) * 1992-09-03 1995-02-07 Harris Corporation Bonded wafer processing with metal silicidation
US5569620A (en) * 1992-09-03 1996-10-29 Harris Corporation Bonded wafer processing with metal silicidation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742356A (zh) * 2014-12-26 2016-07-06 台湾积体电路制造股份有限公司 Finfet结构及其制造方法
CN105742356B (zh) * 2014-12-26 2019-06-11 台湾积体电路制造股份有限公司 Finfet结构及其制造方法

Also Published As

Publication number Publication date
JPH1032321A (ja) 1998-02-03
KR970052024A (ko) 1997-07-29
DE19653632B4 (de) 2004-08-26
TW310458B (zh) 1997-07-11
CN1162834A (zh) 1997-10-22
CN1078739C (zh) 2002-01-30
GB9626954D0 (en) 1997-02-12
DE19653632A1 (de) 1997-07-03

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)