CN116217208A - 一种高致密性的氧化铟铈靶材及其制备方法 - Google Patents
一种高致密性的氧化铟铈靶材及其制备方法 Download PDFInfo
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- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 239000000843 powder Substances 0.000 claims abstract description 63
- 239000002270 dispersing agent Substances 0.000 claims abstract description 55
- 239000002002 slurry Substances 0.000 claims abstract description 51
- 239000002243 precursor Substances 0.000 claims abstract description 37
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 35
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 30
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005245 sintering Methods 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 238000005469 granulation Methods 0.000 claims abstract description 8
- 230000003179 granulation Effects 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 238000012216 screening Methods 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims abstract description 8
- 238000001238 wet grinding Methods 0.000 claims abstract description 8
- 238000000227 grinding Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 20
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 20
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 20
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 16
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 13
- HEBRGEBJCIKEKX-UHFFFAOYSA-M sodium;2-hexadecylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HEBRGEBJCIKEKX-UHFFFAOYSA-M 0.000 claims description 11
- 239000006185 dispersion Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 238000011068 loading method Methods 0.000 claims description 7
- 238000005303 weighing Methods 0.000 claims description 7
- 238000007781 pre-processing Methods 0.000 claims description 4
- 239000013077 target material Substances 0.000 abstract description 12
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 13
- 102220043159 rs587780996 Human genes 0.000 description 10
- 239000004576 sand Substances 0.000 description 10
- 238000007731 hot pressing Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 238000001694 spray drying Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000008235 industrial water Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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Abstract
本发明属于材料技术领域,公开了一种高致密性氧化铟铈靶材及其制备方法。所述制备方法为:将氧化铈粉末与第一分散剂和纯水进行预分散,经湿法研磨得到浆料一;向浆料一中加入氧化铟粉末和第二分散剂进行预分散,经湿法研磨得到浆料二;将浆料二进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体;将氧化铟铈前驱体在600~800℃氧气氛围中常压烧结3~6h预处理,然后在真空环境下升温至烧结温度进行加压烧结,得到高致密性氧化铟铈靶材。本发明所得氧化铟铈靶材密度高、成分分布均匀性好,性能优异。
Description
技术领域
本发明属于导电氧化物材料技术领域,具体涉及一种高致密性氧化铟铈靶材及其制备方法。
背景技术
透明导电氧化物薄膜(Transparent Conductive Oxide)因其具有金属般良好的导电性能、玻璃般的高透光性、红外区高反射率以及其他优良的半导体特性被广泛应用于显示器、太阳能电池、发光二极管、触摸屏、气体传感器,以及微电子、真空电子器件等领域。红外透明导电薄膜在军事以及民用领域都具有重要的应用价值。在民用领域,红外透明导电薄膜可以应用于电子和能源工业、传感技术、光电技术等领域,例如作为红外透明电极应用于红外太阳能电池和红外激光器;在军事领域,其可以应用于红外成像、航天器窗口等领域。因此,红外透明导电薄膜是非常有应用价值的材料。
现有的透明导电氧化物薄膜大多通过氧化锡掺杂氧化铟的靶材制备而成,然而由于锡取代铟使得这种靶材的电子浓度高、电子的迁移率低,导致经由这种靶材制备的透明导电氧化物薄膜红外波段透光能力差。
发明内容
针对现有技术的不足,本发明的第一个目的在于提供一种靶材的制备方法,经由该靶材制备的透明导电氧化物薄膜红外波段透光能力好。本发明提供了一种高致密性氧化铟铈靶材的制备方法,使用该方法制备的氧化铟铈靶材密度高、成分分布均匀性好,使得使用该靶材的导电氧化物薄膜的红外波段的透光率得到提高。
本发明的第二个目的在于提供使用该方法制备的氧化铟铈靶材。
为达到第一个发明目的,本发明采用以下技术方案:一种高致密性氧化铟铈靶材的制备方法,包括如下工艺步骤:
S1.称取氧化铈粉末、氧化铟粉末备用;
S2.将氧化铈粉末、第一分散剂和纯水倒入容器中进行预分散,分散均匀后经湿法研磨得到浆料一;
S3.向浆料一中加入氧化铟粉末和第二分散剂进行预分散,分散均匀后经湿法研磨得到浆料二;
S4.将浆料二进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体;
S5.对氧化铟铈前驱体进行预处理,所述预处理为在600~800℃氧气氛围中常压烧结3~6h;
S6.将预处理后的氧化铟铈前驱体装入模具,放入烧结炉中,在真空环境下升温至烧结温度,再进行加压烧结,得到一种高致密性氧化铟铈靶材。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S1步骤中所述氧化铈粉末与所述氧化铟粉末的质量比为0.1~2:98~99.9,所述氧化铈粉末的纯度为4N、粒径为120~270nm,所述氧化铟粉末的纯度为4N、粒径为120~270nm。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S2步骤中所述第一分散剂为聚乙烯吡咯烷酮、十二烷基苯磺酸钠或十六烷基苯磺酸钠中的一种,所述第一分散剂质量占氧化铈粉末、第一分散剂和纯水总质量的1~10%。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S2步骤中所述预分散时间为15~35min,所述湿法研磨的研磨转速为500~1800r/min,研磨时间为8~18h。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S2步骤中所述浆料一的固含量为30~60wt%,D50<1μm。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S3步骤中所述第二分散剂为聚乙烯吡咯烷酮、十二烷基苯磺酸钠或十六烷基苯磺酸钠中的一种,所述第二分散剂质量占氧化铟粉末、第二分散剂和纯水总质量的1~10%。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S3步骤中所述预分散时间为15~35min,所述湿法研磨的研磨转速为500~1800r/min,研磨时间为6~15h。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S3步骤中所述浆料二的固含量为30~60wt%,D50<1μm。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S6步骤中所述升温至烧结温度为采用速热装置以5~15℃/min匀速升温至1400~1550℃,所述加压烧结为在35~50MPa下进行保温保压6~10h。
进一步的,上述的一种高致密性氧化铟铈靶材的制备方法,S6步骤还包括在所述加压烧结后采用快冷装置以10~20℃/min匀速降温至50℃,从而缩短降温时间。
为达到第二个发明目的,本发明采用的技术方案为:一种采用如上述的方法制备得到的高致密性氧化铟铈靶材。
相对于现有技术,本发明具有以下有益效果:
本发明提供了一种高致密性氧化铟铈靶材及其制备方法,使用该方法制备得到的氧化铟铈靶材密度高、成分分布均匀性好,使得使用该靶材的导电氧化物薄膜的红外波段的透光率得到提高,而且具有优异的导电性能,不影响作为导电电极使用,同时薄膜的其他物理化学性能与传统的氧化铟锡(ITO)薄膜一致。并且此方法获得的氧化铟铈靶材不仅致密性均一、无坑底,而且生产周期短、能耗低、成本低。
具体实施方式
下面通过具体实施方式来进一步说明本发明的技术方案。本领域技术人员应该明了,所述实施例仅仅是帮助理解本发明,不应视为对本发明的具体限制。
实施例中未注明具体实验步骤或条件者,按照本领域内的文献所描述的常规实验步骤的操作或条件即可进行。所用试剂或仪器设备未注明生产厂商者,均为可以通过市购获得的常规试剂产品或仪器设备。
以下所用的:
氧化铈粉末的纯度为4N、粒径为120~270nm;
氧化铟粉末的纯度为4N、粒径为120~270nm;
真空热压烧结炉型号为SPYL-2300/9;
工业冷水机型号为DNC-15AT。
实施例1
一种高致密性氧化铟铈靶材的制备方法,包括如下工艺步骤:
S1.称取氧化铈粉末(纯度为4N、粒径为120~270nm,下同)0.5kg、氧化铟粉末(纯度为4N、粒径为120~270nm,下同)99.5kg备用。
S2.将氧化铈粉末、第一分散剂十二烷基苯磺酸钠和纯水倒入浆料桶中进行预分散,第一分散剂十二烷基苯磺酸钠质量占氧化铈粉末、第一分散剂十二烷基苯磺酸钠和纯水总质量的2%,预分散时间为30min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为800r/min,研磨时间为16h,得到浆料一,浆料一的固含量为45wt%,D50=0.302μm。
S3.向浆料一中加入氧化铟粉末和第二分散剂聚乙烯吡咯烷酮进行预分散,第二分散剂聚乙烯吡咯烷酮质量占氧化铟粉末、第二分散剂聚乙烯吡咯烷酮和纯水总质量的2%,预分散时间为30min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为800r/min,研磨时间13h,得到浆料二,浆料二的固含量为36wt%,D50=0.285μm。
S4.将浆料二以流体形式打入喷雾干燥塔进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体。
S5.对氧化铟铈前驱体进行预处理,放入氧气氛围的常压煅烧炉中于600℃下保温4h,待自然降至常温后取出。
S6.将预处理后的氧化铟铈前驱体装入耐高温特制模具,放入烧结炉中,在真空环境下采用真空热压烧结炉以6℃/min匀速升温至1400℃,在35MPa保温保压6小时,再采用工业冷水机以10℃/min匀速降温至50℃,得到一种高致密性的氧化铟铈靶材。
实施例2
一种高致密性氧化铟铈靶材的制备方法,包括如下工艺步骤:
S1.称取氧化铈粉末1kg、氧化铟粉末99kg备用。
S2.将氧化铈粉末、第一分散剂十二烷基苯磺酸钠和纯水倒入浆料桶中进行预分散,第一分散剂十二烷基苯磺酸钠质量占氧化铈粉末、第一分散剂十二烷基苯磺酸钠和纯水总质量的2%,预分散时间为30min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为1000r/min,研磨时间为15h,得到浆料一,浆料一的固含量为45wt%,D50=0.295μm。
S3.向浆料一中加入氧化铟粉末和第二分散剂聚乙烯吡咯烷酮进行预分散,第二分散剂聚乙烯吡咯烷酮质量占氧化铟粉末、第二分散剂聚乙烯吡咯烷酮和纯水总质量的2%,预分散时间为30min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为1000r/min,研磨时间12h,得到浆料二,浆料二的固含量为36wt%,D50=0.263μm。
S4.将浆料二以流体形式打入喷雾干燥塔进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体。
S5.对氧化铟铈前驱体进行预处理,放入氧气氛围的常压煅烧炉中于700℃下保温5h,待自然降至常温后取出。
S6.将预处理后的氧化铟铈前驱体装入耐高温特制模具,放入烧结炉中,在真空环境下采用真空热压烧结炉以10℃/min匀速升温至1480℃,在45MPa保温保压7小时,再采用工业冷水机以15℃/min匀速降温至50℃,得到一种高致密性的氧化铟铈靶材。
实施例3
一种高致密性氧化铟铈靶材的制备方法,包括如下工艺步骤:
S1.称取氧化铈粉末2kg、氧化铟粉末98kg备用;
S2.将氧化铈粉末、第一分散剂十二烷基苯磺酸钠和纯水倒入浆料桶中进行预分散,第一分散剂十二烷基苯磺酸钠质量占氧化铈粉末、第一分散剂十二烷基苯磺酸钠和纯水总质量的2%,预分散时间为30min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为1300r/min,研磨时间为14h,得到浆料一,浆料一的固含量为45wt%,D50=0.286μm。
S3.向浆料一中加入氧化铟粉末和第二分散剂聚乙烯吡咯烷酮进行预分散,第二分散剂聚乙烯吡咯烷酮质量占氧化铟粉末、第二分散剂聚乙烯吡咯烷酮和纯水总质量的2%,预分散时间为30min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为1300r/min,研磨时间12h,得到浆料二,浆料二的固含量为36wt%,D50=0.255μm。
S4.将浆料二以流体形式打入喷雾干燥塔进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体。
S5.对氧化铟铈前驱体进行预处理,放入氧气氛围的常压煅烧炉中于760℃下保温6h,待自然降至常温后取出。
S6.将预处理后的氧化铟铈前驱体装入耐高温特制模具,放入烧结炉中,在真空环境下采用真空热压烧结炉以13℃/min匀速升温至1500℃,在50MPa保温保压10小时,再采用工业冷水机以17℃/min匀速降温至50℃,得到一种高致密性的氧化铟铈靶材。
实施例4
一种高致密性氧化铟铈靶材的制备方法,包括如下工艺步骤:
S1.称取氧化铈粉末0.1kg、氧化铟粉末99.9kg备用。
S2.将氧化铈粉末、第一分散剂十六烷基苯磺酸钠和纯水倒入浆料桶中进行预分散,第一分散剂十六烷基苯磺酸钠质量占氧化铈粉末、第一分散剂十六烷基苯磺酸钠和纯水总质量的1%,预分散时间为15min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为500r/min,研磨时间18h,得到浆料一,浆料一的固含量为60wt%,D50=0.864μm。
S3.向浆料一中加入氧化铟粉末和第二分散剂聚乙烯吡咯烷酮进行预分散,第二分散剂聚乙烯吡咯烷酮质量占氧化铟粉末、第二分散剂聚乙烯吡咯烷酮和纯水总质量的10%,预分散时间为35min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为1800r/min,研磨时间6h,得到浆料二,浆料二的固含量为30wt%,D50=0.749μm。
S4.将浆料二以流体形式打入喷雾干燥塔进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体。
S5.对氧化铟铈前驱体进行预处理,放入氧气氛围的常压煅烧炉中于600℃下保温6h,待自然降至常温后取出。
S6.将预处理后的氧化铟铈前驱体装入耐高温特制模具,放入烧结炉中,在真空环境下采用真空热压烧结炉以15℃/min匀速升温至1550℃,在50MPa保温保压10小时,再采用工业冷水机以10℃/min匀速降温至50℃,得到一种高致密性的氧化铟铈靶材。
实施例5
一种高致密性氧化铟铈靶材的制备方法,包括如下工艺步骤:
S1.称取氧化铈粉末2kg、氧化铟粉末98kg备用;
S2.将氧化铈粉末、第一分散剂聚乙烯吡咯烷酮和纯水倒入浆料桶中进行预分散,第一分散剂聚乙烯吡咯烷酮质量占氧化铈粉末、第一分散剂聚乙烯吡咯烷酮和纯水总质量的10%,预分散时间为35min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为1800r/min,研磨时间为8h,得到浆料一,浆料一的固含量为30wt%,D50=0.518μm。
S3.向浆料一中加入氧化铟粉末和第二分散剂十六烷基苯磺酸钠进行预分散,第二分散剂十六烷基苯磺酸钠质量占氧化铟粉末、第二分散剂十六烷基苯磺酸钠和纯水总质量的1%,预分散时间为15min,分散均匀后把溶液用泵打入砂磨机中,研磨转速为500r/min,研磨时间15h,得到浆料二,浆料二的固含量为60wt%,D50=0.671μm。
S4.将浆料二以流体形式打入喷雾干燥塔进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体。
S5.对氧化铟铈前驱体进行预处理,放入氧气氛围的常压煅烧炉中于800℃下保温3h,待自然降至常温后取出。
S6.将预处理后的氧化铟铈前驱体装入耐高温特制模具,放入烧结炉中,在真空环境下采用真空热压烧结炉以15℃/min匀速升温至1550℃,在50MPa保温保压10小时,再采用工业冷水机以10℃/min匀速降温至50℃,得到一种高致密性的氧化铟铈靶材。
对比例1
一种氧化铟靶材的制备方法,具体同实施例3,区别仅在于原料只取用氧化铟粉末,不加入氧化铈粉末。
对比例2
一种氧化铟铈靶材的制备方法,具体同实施例3,区别仅在于步骤S5中氧化铟铈前驱体不在氧气氛围中的常压炉中进行预处理就执行步骤S6的操作。
实验测试:
将上述各实施例和对比例靶材用水切割设备和平面磨床进行机械加工并清洗,通过阿基米德排水法测量靶材密度、相对密度及50-300nm的气孔数量(个/2600μm2),并测量靶材制备的薄膜透光率和导电性能。实验结果如下表1所示。
表1
由表1结果可见,本发明通过铈掺杂及对氧化铟铈前驱体进行氧气氛围常压煅烧预处理,可以显著提升所得氧化铟铈靶材的致密度、均匀性、透光率和导电性。
申请人声明,本发明通过上述实施例来说明本发明的工艺方法,但本发明并不局限于上述工艺步骤,即不意味着本发明必须依赖上述工艺步骤才能实施。所属技术领域的技术人员应该明了,对本发明的任何改进,对本发明所选用原料的等效替换及辅助成分的添加、具体方式的选择等,均落在本发明的保护范围和公开范围之内。
Claims (10)
1.一种高致密性氧化铟铈靶材的制备方法,其特征在于,包括如下工艺步骤:
S1.称取氧化铈粉末、氧化铟粉末备用;
S2.将氧化铈粉末、第一分散剂和纯水倒入容器中进行预分散,分散均匀后经湿法研磨得到浆料一;
S3.向浆料一中加入氧化铟粉末和第二分散剂进行预分散,分散均匀后经湿法研磨得到浆料二;
S4.将浆料二进行喷雾造粒、混料和筛分,得到氧化铟铈前驱体;
S5.对氧化铟铈前驱体进行预处理,所述预处理为在600~800℃氧气氛围中常压烧结3~6h;
S6.将预处理后的氧化铟铈前驱体装入模具,放入烧结炉中,在真空环境下升温至烧结温度,再进行加压烧结,得到一种高致密性氧化铟铈靶材。
2.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S1步骤中所述氧化铈粉末与所述氧化铟粉末的质量比为0.1~2:98~99.9,所述氧化铈粉末的纯度为4N、粒径为120~270nm,所述氧化铟粉末的纯度为4N、粒径为120~270nm。
3.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S2步骤中所述第一分散剂为聚乙烯吡咯烷酮、十二烷基苯磺酸钠或十六烷基苯磺酸钠中的一种,所述第一分散剂质量占氧化铈粉末、第一分散剂和纯水总质量的1%~10%。
4.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S2步骤中所述预分散时间为15~35min;所述湿法研磨的研磨转速为500~1800r/min,研磨时间为8~18h。
5.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S2步骤中所述浆料一的固含量为30~60wt%,D50<1μm。
6.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S3步骤中所述第二分散剂为聚乙烯吡咯烷酮、十二烷基苯磺酸钠或十六烷基苯磺酸钠中的一种,所述第二分散剂质量占氧化铟粉末、第二分散剂和纯水总质量的1~10%;S3步骤中所述预分散时间为15~35min;所述湿法研磨的研磨转速为500~1800r/min,研磨时间为6~15h。
7.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S3步骤中所述浆料二的固含量为30~60wt%,D50<1μm。
8.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S6步骤中所述升温至烧结温度为采用速热装置以5~15℃/min匀速升温至1400~1550℃;所述加压烧结为在35~50MPa下进行保温保压6~10h。
9.根据权利要求1所述的一种高致密性氧化铟铈靶材的制备方法,其特征在于,S6步骤还包括在所述加压烧结后采用快冷装置以10~20℃/min匀速降温至50℃。
10.一种采用如权利要求1~9任一项所述的方法制备得到的高致密性氧化铟铈靶材。
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