CN1157779C - 一种处理装入智能插卡的削薄的芯片的方法 - Google Patents

一种处理装入智能插卡的削薄的芯片的方法 Download PDF

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Publication number
CN1157779C
CN1157779C CNB008072833A CN00807283A CN1157779C CN 1157779 C CN1157779 C CN 1157779C CN B008072833 A CNB008072833 A CN B008072833A CN 00807283 A CN00807283 A CN 00807283A CN 1157779 C CN1157779 C CN 1157779C
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China
Prior art keywords
smart card
chip
adhesive layer
foil
adhesive
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Expired - Fee Related
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CNB008072833A
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English (en)
Chinese (zh)
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CN1350701A (zh
Inventor
托马斯·格拉斯尔
̩
亚亚·哈吉里－泰拉尼
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Giesecke+Devrient GmbH
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Giesecke+Devrient GmbH
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Publication of CN1350701A publication Critical patent/CN1350701A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/699—Insulating or insulated package substrates; Interposers; Redistribution layers for flat cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603—Formed on wafers or substrates before dicing and remaining on chips after dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members

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  • Credit Cards Or The Like (AREA)
CNB008072833A 1999-05-07 2000-05-04 一种处理装入智能插卡的削薄的芯片的方法 Expired - Fee Related CN1157779C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19921230.9 1999-05-07
DE19921230A DE19921230B4 (de) 1999-05-07 1999-05-07 Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten

Publications (2)

Publication Number Publication Date
CN1350701A CN1350701A (zh) 2002-05-22
CN1157779C true CN1157779C (zh) 2004-07-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008072833A Expired - Fee Related CN1157779C (zh) 1999-05-07 2000-05-04 一种处理装入智能插卡的削薄的芯片的方法

Country Status (6)

Country Link
EP (1) EP1183726A1 (enExample)
JP (1) JP2002544669A (enExample)
CN (1) CN1157779C (enExample)
AU (1) AU4561200A (enExample)
DE (1) DE19921230B4 (enExample)
WO (1) WO2000068990A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW522531B (en) 2000-10-20 2003-03-01 Matsushita Electric Industrial Co Ltd Semiconductor device, method of manufacturing the device and mehtod of mounting the device
FR2823012B1 (fr) * 2001-04-03 2004-05-21 Commissariat Energie Atomique Procede de transfert selectif d'au moins un element d'un support initial sur un support final
DE10117880B4 (de) * 2001-04-10 2009-01-29 Mühlbauer Ag Verfahren zum Vereinzeln von elektronischen Bauteilen aus einem Verbund
US6964086B2 (en) * 2002-03-04 2005-11-15 Matsushita Electric Industrial Co., Ltd. Method of manufacturing thin film piezoelectric element, and element housing jig
US6943056B2 (en) 2002-04-16 2005-09-13 Renesas Technology Corp. Semiconductor device manufacturing method and electronic equipment using same
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
DE10339559B4 (de) * 2003-08-26 2006-03-02 W.C. Heraeus Gmbh Verfahren zur Lagebestimmung von Bauelementträgern
DE10341186A1 (de) * 2003-09-06 2005-03-31 Martin Michalk Verfahren und Vorrichtung zum Kontaktieren von Halbleiterchips
GB2412786A (en) * 2004-03-24 2005-10-05 E2V Tech Uk Ltd Method and apparatus for manufacturing chip scale components or microcomponents
KR20110122869A (ko) * 2004-07-09 2011-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｉｃ칩 및 그 제조방법
DE102004036962A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik
US8728937B2 (en) 2004-07-30 2014-05-20 Osram Opto Semiconductors Gmbh Method for producing semiconductor chips using thin film technology
EP1774599B1 (de) 2004-07-30 2015-11-04 OSRAM Opto Semiconductors GmbH Verfahren zur herstellung von halbleiterchips in dünnfilmtechnik und halbleiterchip in dünnfilmtechnik
FR2878076B1 (fr) * 2004-11-17 2007-02-23 St Microelectronics Sa Amincissement d'une plaquette semiconductrice
DE102004059599B3 (de) * 2004-12-09 2006-08-17 Infineon Technologies Ag Verfahren zum Aufbringen einer Klebstoffschicht auf dünngeschliffene Halbleiterchips eines Halbleiterwafers
DE102006032821B4 (de) * 2006-07-14 2008-04-10 Mühlbauer Ag Verfahren und Vorrichtung zur Herstellung einer Vielzahl von Chipkarten mit einer klebstofffreien Fixierung der Chipmodule
US20100142167A1 (en) * 2006-11-24 2010-06-10 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Electronic, in particular microelectronic, functional group and method for its production
JP4958287B2 (ja) * 2007-05-30 2012-06-20 東京応化工業株式会社 剥がし装置における剥離方法
DE102010025774A1 (de) 2010-07-01 2012-01-05 Giesecke & Devrient Gmbh Verfahren zur Herstellung eines Inlays für einen tragbaren Datenträger und Inlay
JP6417164B2 (ja) * 2014-09-18 2018-10-31 芝浦メカトロニクス株式会社 積層体製造装置、積層体、分離装置及び積層体製造方法
CN114334678B (zh) * 2020-09-30 2026-07-03 日月光半导体制造股份有限公司 形成半导体封装结构的方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3122981A1 (de) * 1981-06-10 1983-01-05 GAO Gesellschaft für Automation und Organisation mbH, 8000 München Verfahren zum einbau von ic-bausteinen in ausweiskarten
JPS61112345A (ja) * 1984-11-07 1986-05-30 Toshiba Corp 半導体装置の製造方法
JPS61280660A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 半導体装置の製造方法
GB2221470B (en) * 1985-12-27 1990-09-05 Fsk Kk Adhesive sheet suitable for semiconductor wafer processing
DE3639630A1 (de) * 1986-11-20 1988-06-01 Gao Ges Automation Org Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben
DE3901402A1 (de) * 1989-01-19 1990-07-26 Telefonbau & Normalzeit Gmbh Verfahren zur herstellung einer chipkarte
JP2829064B2 (ja) * 1989-11-27 1998-11-25 株式会社ジャパンエナジー 半導体装置の製造方法
JPH03286553A (ja) * 1990-04-03 1991-12-17 Furukawa Electric Co Ltd:The ダイシング方法
JP2874279B2 (ja) * 1990-05-10 1999-03-24 三菱電機株式会社 薄型半導体装置の製造方法
JP2610703B2 (ja) * 1990-09-05 1997-05-14 住友電気工業株式会社 半導体素子の製造方法
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
FR2701139B1 (fr) * 1993-02-01 1995-04-21 Solaic Sa Procédé pour l'implantation d'un micro-circuit sur un corps de carte intelligente et/ou à mémoire, et carte comportant un micro-circuit ainsi implanté.
ZA941671B (en) * 1993-03-11 1994-10-12 Csir Attaching an electronic circuit to a substrate.
FR2715501B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
US5480842A (en) * 1994-04-11 1996-01-02 At&T Corp. Method for fabricating thin, strong, and flexible die for smart cards
DE19502398A1 (de) * 1995-01-26 1996-08-01 Giesecke & Devrient Gmbh Verfahren zur Montage eines elektronischen Moduls in einem Kartenkörper
DE19504194C1 (de) * 1995-02-09 1996-04-04 Interlock Ag Verfahren zur Herstellung von Ausweiskarten und danach hergestellte Ausweiskarte
US6342434B1 (en) * 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
DE19602821C1 (de) * 1996-01-26 1997-06-26 Siemens Ag Verfahren zur Herstellung einer Datenkarte
EP0824301A3 (en) * 1996-08-09 1999-08-11 Hitachi, Ltd. Printed circuit board, IC card, and manufacturing method thereof
EP0858050A3 (en) * 1997-02-07 2001-03-28 Keylink Gestao e Investimentos Lda Procedure for the continuous manufacture of microchip carrier cards and cards obtained via the seid procedure
DE19708615C1 (de) * 1997-03-03 1998-07-23 Siemens Ag Chipkartenmodul und diesen umfassende Chipkarte
DE19732644C1 (de) * 1997-07-29 1998-11-12 Siemens Ag Verfahren zur Herstellung einer Chipkarte für kontaktlose Daten- und/oder Energieübertragung sowie Chipkarte
JPH1191275A (ja) * 1997-09-25 1999-04-06 Dainippon Printing Co Ltd 非接触型ｉｃカードの製造方法および非接触型ｉｃカード
AU3144899A (en) * 1998-03-14 1999-10-11 Michael Stromberg Method and device for treating wafers presenting components during thinning of the wafer and separation of the components
JP2000040677A (ja) * 1998-07-23 2000-02-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法

Also Published As

Publication number Publication date
JP2002544669A (ja) 2002-12-24
DE19921230B4 (de) 2009-04-02
DE19921230A1 (de) 2000-11-09
AU4561200A (en) 2000-11-21
EP1183726A1 (de) 2002-03-06
WO2000068990A1 (de) 2000-11-16
CN1350701A (zh) 2002-05-22

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