CN1901183A - 衬底、智能卡模块及制造它们的方法 - Google Patents

衬底、智能卡模块及制造它们的方法 Download PDF

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Publication number
CN1901183A
CN1901183A CNA2006101213960A CN200610121396A CN1901183A CN 1901183 A CN1901183 A CN 1901183A CN A2006101213960 A CNA2006101213960 A CN A2006101213960A CN 200610121396 A CN200610121396 A CN 200610121396A CN 1901183 A CN1901183 A CN 1901183A
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China
Prior art keywords
metal pattern
substrate
insulating barrier
metallization layer
smart card
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Pending
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CNA2006101213960A
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English (en)
Inventor
李硕远
崔敬世
金东汉
卢永勋
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1901183A publication Critical patent/CN1901183A/zh
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    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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Abstract

提供了一种衬底、具有该衬底的智能卡模块和制造它们的方法。还提供了具有在其双侧上形成的金属图案并可应用到引线接合和倒装片接合的衬底，具有其的智能卡模块，及其制造方法。衬底可包括绝缘层、上部金属图案、底部金属图案、第一电镀层、第二电镀层和衬底。绝缘层可以具有多个通孔。上部金属图案可形成在绝缘层和多个通孔的侧表面上。底部金属图案可以形成在绝缘层的底部并电连接到上部金属图案。第一电镀层可形成在上部金属图案和底部金属图案的上表面上。第二电镀层可形成在底部金属图案的底部上。衬底可以包括多个通孔的侧表面由上部金属图案和第一电镀层覆盖的接触孔。绝缘层的下表面可由底部金属图案和第一电镀层支撑。

Description

衬底、智能卡模块及制造它们的方法
技术领域
本发明的示例性实施例涉及一种衬底，具有该衬底的智能卡模块及其制造方法。本发明的其它示例性实施例涉及一种具有形成于衬底两侧的金属图案的衬底，该衬底可应用于引线结合(wire bonding)和倒装片结合(flip chipbonding)，还涉及具有该衬底的智能卡模块及其制造方法。
背景技术
术语“智能卡(smart card)”可使用在各种工业领域中。在国际标准化组织中(ISO)，智能卡可定义为包括至少一个集成电路的卡。为了处理给定的事务，智能卡通常指包括具有微处理器、操作系统、安全模块和存储器的集成电路芯片的塑料卡。智能卡可使用于各种应用领域(例如，交通、物流(distribution)、互联网、金融、政府、鉴定、预订、指示和/或识别)。
可以通过连接半导体芯片到具有金属图案的衬底来制造智能卡。可以使用密封树脂来将半导体芯片与衬底密封。如果衬底的金属图案为单层金属层，可以使用引线接合来连接半导体芯片到智能卡模块的衬底。如果衬底包括在衬底双面上形成的金属图案，则可以通过倒装片接合把半导体芯片连接到衬底。
与倒装片接合相比，引线接合的衬底可具有不同的结构。在常规工艺中，可以使用激光在衬底上形成微型通孔(micro via)。依照常规方法制造智能卡可能是昂贵的。同时，在有通孔的衬底区域，可能难以进行引线接合。
发明内容
本发明的示例性实施例涉及一种衬底、具有该衬底的智能卡及他们的制造方法。本发明的其他示例性实施例涉及一种具有在衬底的双面上形成有金属图案的衬底，该衬底可应用于引线接合和倒装片接合，还涉及具有该衬底的智能卡及它们的制造方法。
本发明的示例性实施例提供了一种衬底，其可包括在其双面上形成的金属图案，而不用形成微型通孔，并可应用于引线接合和/或倒装片接合。
依照本发明的示例性实施例，提供了一种衬底，其可包括绝缘层，该绝缘层在绝缘层的中心部分附近具有多个通孔；在绝缘层的上表面上和多个通孔在侧表面上的上部金属图案；在绝缘层的下表面上的底部金属图案，以支撑绝缘层和上部金属图案并电连接到上部金属图案；覆盖上部金属图案的上表面和底部金属图案的上表面的暴露部分的第一电镀层；底部金属图案的下表面上的第二电镀层；和接触孔，其具有多个通孔的侧表面和绝缘层的下表面，绝缘层的下表面可由上部金属图案和第一电镀层覆盖，绝缘层的下表面可由底部金属图案和第一电镀层支撑。接触孔可以具有用于引线接合的给定尺寸。
依照本发明的其它示例性实施例，提供了包括衬底的智能卡，其中衬底可以通过引线接合和/或倒装片接合连接到半导体芯片。
依照本发明的其它示例性实施例，提供了一种制造衬底的方法，包括：贴附上部金属层和绝缘层到衬底，多个通孔从上部金属层的方向贯穿上部金属层和绝缘层，在绝缘层的底部上按压底部金属层，通过构图上部金属层和底部金属层来形成上部金属图案和底部金属图案，以及在上部金属图案和底部金属图案上形成第一电镀层和第二电镀层。
多个通孔可贯穿上部金属层和绝缘层，连接上部金属层到多个通孔的侧表面，且在多个通孔的较低部分使上部金属层变形。上部金属层的变形可以是毛口(Burr)的形式。可在多个通孔的侧表面下，在上部金属层上形成毛口。可以使用施压工艺、钻孔工艺和/或冲孔工艺，在多个通孔的较低部分形成毛口。
依照本发明的示例性实施例，可以使用施压工艺、钻孔工艺和/或冲孔工艺，不需使用激光形成微型通孔，形成上部金属层和下部金属层之间的电连接，因此可以降低衬底的制造成本。依照本发明的示例性实施例的具有衬底的智能卡可通过引线接合和/或倒装片接合来制造。
附图说明
结合附图，通过下面详细的说明，本发明的示例性实施例将更容易理解。图1-13表示非限定性的、下面说明的本发明的示例性实施例。
图1-3是说明依照本发明的示例性实施例的具有衬底的智能卡模块的图；
图4是说明依照本发明的示例性实施例的制造衬底的方法的流程图；以及
图5-13是说明依照本发明的示例性实施例的制造衬底的方法的图。
具体实施方式
参考其中示出了本发明的示例性实施例的附图，将更加全面的描述本发明的各种示例性实施例。本发明的示例性实施例不应被视为对这里阐述的示例性实施例的限制，相反，提供这些示例性实施例使得公开内容全面和完整，对本领域技术人员全面地传达本发明的概念。整个说明书的附图中相同的符号指相同的元件。
这里公开了本发明的详细的说明性实施例。但是，这里公开的具体结构和功能性特点仅仅代表了说明本发明的示例性实施例的目的。但是，本发明可以以多种可选的形式来实施，不应视为仅仅由这里阐述的实施例限定。
这里使用的空间相对性术语，例如“下面”、“以下”、“较低”、“以上”、“上部”等，可用来易于说明以描述附图中描述的一个元件或特征与另一个元件或特征之间的关系。应当理解，除了图中说明的方位外，存在的空间相对性术语意在包括了使用或操作中的器件的各种方位。例如，如果图中的器件翻转，描述为在其它元件或特征“以下”或“之下”的元件则位于其它元件或特征“之上”。因此，示例性术语“之下”可包括上和下的方位。器件可以是不同的方位(90度翻转或其它方位)且这里使用的空间相对性指示符依此解释。
这里使用的术语仅仅出于描述具体实施例的目的，不是对本发明的示例性实施例的限制。如这里使用的单数形式“一”也包括复数形式，除非说明书清楚地指出其他情况。还应当理解，当这里使用术语“包括”时，明确所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或多个其它特征、整数、步骤、操作、元件和/或部件的存在。
除非另外定义，这里使用的所有术语(包括技术的和科学的术语)具有与本发明所属领域技术人员所通常理解的相同的意义。还应当理解，那些例如在一般字典里所限定的术语，应解释为与相关技术的语境中它们的意思相一致，除非这里特别地限定，不解释为理想化的或极度正式的意义。
本发明的示例性实施例涉及一种衬底，具有该衬底的智能卡以及制造它们的方法。本发明的其他示例性实施例涉及一种具有在衬底的双面上形成有金属图案的衬底，该衬底可应用于引线接合和倒装片接合，还涉及具有该衬底的智能卡模块及它们的制造方法。
图1为示出根据本发明示例性实施例的衬底的图示。
参考图1，衬底101可以包括绝缘层100和多个通孔。多个通孔可以围绕衬底的中心部分形成。中心部分可以是这样的区域，其中可以形成管芯焊盘(die pad)103且可以嵌入半导体芯片。可以在绝缘层100的上表面和侧表面上接合上部金属图案102A。
绝缘层100可以选自包括玻璃织物、环氧树脂、BT树脂、聚合物膜和绝缘粘合剂的组的一种绝缘材料。上部金属图案102A可以由铜或类似材料形成。可以层压上部金属图案102A，其中上部金属图案102A接触绝缘层100。上部金属图案102A可以具有箔片形状。可以通过电镀在绝缘层100上形成铜。可以在管芯焊盘103上形成管芯接触孔114，以增强半导体芯片与绝缘层100之间的粘合力。管芯粘合剂可以浸入或施加到管芯接触孔114，以更加牢固地把半导体芯片固定到管芯焊盘103上。
衬底101还可以包括底部金属图案108A，该底部金属图案贴附到绝缘层100的下表面。底部金属图案108A可以支撑绝缘层100的底部和围绕中心部分形成的上部金属图案102A。在多个通孔的侧壁上形成的上部金属图案102A可以是变形的(transformed)。上部金属图案102A的变形104(例如毛口104)可以如图7所示制造在多个通孔的侧壁处。在多个通孔的侧壁以下形成的上部金属图案102A的长度1必须与在绝缘层100上形成的多个通孔的下表面的长度1’相同或更长。底部金属图案108A可以通过毛口(burr)电连接到上部金属图案102A。由于当把底部金属图案108A压到绝缘层上时毛口受压，毛口可以变得更小。当压缩之后，毛口不能由人的肉眼识别。
衬底101还可以包括覆盖上部金属图案102A的上表面和底部金属图案108A的上表面的暴露部分的第一电镀层116。第二电镀层118可以覆盖底部金属图案108A的下表面。第一电镀层116和第二电镀层118可以由选自包括金(Au)、镍(Ni)和钯(Pd)的组的单层，或包括选自包括金(Au)、镍(Ni)和钯(Pd)的组的一种的多层构成。
当形成第一电镀层116时，接触孔106可以形成在衬底101上。接触孔106的侧壁可以由上部金属图案102A和第一电镀层116覆盖。接触孔106的下表面可以由底部金属图案108A和第一电镀层116覆盖。接触孔106可以贯穿管芯焊盘103且可以具有进行引线接合所需要的给定尺寸。接触孔106可以具有电连接上部金属图案102A和下底部金属图案108A的结构。
衬底101可以在两侧都具有金属图案而不需要形成微型通孔，并且可应用到引线接合和/或倒装片结合。管芯焊盘孔114可以形成在管芯焊盘区域103上以增强半导体芯片的粘合力。
图2是示出依照本发明的示例性实施例的包括衬底的智能卡模块的图。
参考图2，智能卡模块200包括图1所示的衬底101。智能卡模块200还可以包括通过引线接合124嵌入到衬底101上的半导体芯片120。为了半导体芯片120和上部金属图案102A显示出绝缘特性，管芯粘合剂122可以是非导电管芯粘合剂。
可以使用密封树脂126通过浇灌端铣削(potting end milling)法来密封半导体芯片120和接合引线124。密封树脂126可以分布并覆盖到智能卡模块层101上。接着可以硬化密封树脂126并可以研磨硬化的密封树脂的上表面。还可以使用坝端填充(dam end fill)法来密封半导体芯片120和接合引线124。可以使用具有较高粘性的密封树脂126形成坝，且坝的内侧可填充有具有更低粘性的材料。然后可以通过照射UV光来硬化坝。密封树脂126可以通过掩模印刷并使用环氧模具化合物(epoxy mold compound)来制模，其中环氧模具化合物可以密封半导体芯片120和接合引线124。
图3是示出依照本发明的其它示例性实施例的包括衬底的智能卡模块的图。
参考图3，可以使用倒装片接合，通过半导体芯片120A的凸点128，将智能卡模块201电连接到图1所示的衬底。凸点128可以附加地形成在半导体芯片120A上。为了连接半导体芯片120A和衬底101，可以将非导电管芯粘合剂122预先涂布到衬底101的管芯焊盘区上。同时加热和加压以硬化管芯粘合剂122，这可将凸点128连接到第一电镀层116的上部金属图案102A。
依照本发明的其它示例性实施例，为了连接半导体芯片120A和衬底101，第一电镀层116可形成在上部金属图案102A上以便进行焊接，其上连接有凸点128。通过焊接可以连接上部金属图案102A和半导体芯片120。可分布管芯粘合剂122以填充半导体芯片120和衬底101之间的空间。可以使用密封树脂126覆盖半导体芯片120A来密封智能卡模块201。
图4是说明依照本发明的示例性实施例的制造衬底的方法的流程图。
参考图4，在S100中可以把绝缘层粘接到铜上部金属图案层。在S110中，为了在上部金属图案上制造毛口，多个通孔可以在朝着上部金属图案的方向贯穿上部金属图案和绝缘层。在S120中可以将底部金属层压到绝缘层的底部。当施压时，毛口可以在多个通孔的区域中的上部金属层和底部金属层之间制造相对坚实的电连接。在S130中，当施压后，在上部金属层和底部金属层上进行曝光工艺、显影工艺和/或蚀刻工艺以形成上部金属图案和底部金属图案。在S140中，可以在上部金属图案上形成第一电镀层，且可以在底部金属图案上形成第二电镀层。然后可以在衬底上形成接触孔。
尽管在上部金属图案上形成的毛口连接上部金属图案和底部金属图案，但是上部金属图案和底部金属图案之间的电连接可能变得不稳定。为了阻碍、或防止上部金属图案和底部金属图案之间的电连接的不稳定性，第一金属层可连接上部金属图案和底部金属图案。在S150中，可以进行切割工艺以切割具有第一和第二电镀层的智能卡模块至给定尺寸。
图5-13是说明依照本发明的示例性实施例的制造衬底的方法的图。
参考图5，绝缘层100可以粘合到上部金属层102。绝缘衬底可以用作绝缘层，替代使用粘性绝缘层。绝缘衬底可以由选自包括玻璃织物、环氧树脂、BT树脂和聚合物膜的组的一种构成。可以使用层压方法接合绝缘层100和上部金属层102。
参考图6，围绕管芯焊盘区103的位置可以有多个通孔105。通过缠绕接合的上部金属层102和绝缘层100至卷轴，可以进行卷到卷的送料。多个通孔105可以形成在可能进行引线接合的位置。为了贯穿多个通孔105，可以使用施压工艺、钻孔(drilling)工艺和/或冲孔(punching)工艺之一。当贯通了多个通孔105后，在区域“A”中，在多个通孔的下部可能会生成毛口。毛口可以是上部金属层102的变形。
图7展示了毛口104作为上部金属层102的变形。由于施压、钻孔和/或冲孔工艺劣质(inferiority)的结果，可能产生毛口。但是，本发明的示例性实施例中，毛口可以是实现上部金属层102和底部金属层108之间的电连接的装置。低于绝缘层100形成的上部金属层102的毛口，可以物理地接触通过随后的工艺形成的底部金属层以完成上部金属图案102和底部金属层108之间的电连接。
参考图8，可以使用粘合剂(未示出)，将底部金属层108结合到毛口104的底部上。如果绝缘层100用作粘合剂，为了机械稳定性，底部金属层108可以与上部金属层102的厚度大致相同或更厚。可以使用铜材料来形成具有大约100μm厚度的底部金属层108。为了进一步完成毛口104的电连接，可以通过层压方法压上部金属层102和底部金属层108，并可以硬化粘合剂。当压底部金属层108时，可能会按压毛口。毛口可以变得更小而可能人眼不能识别。
参考图9-12，具有光致抗蚀剂特性的干膜可以层压到上部金属层102和底部金属层108上。可以使用掩模112进行曝光工艺和/或显影工艺，以将干膜110转变为干膜图案110A。可以使用干膜图案110A作为蚀刻掩模，通过蚀刻上部金属层102来形成上部金属图案102A，通过蚀刻底部金属层108来形成底部金属图案108A。上部金属图案102A和底部金属图案108A可以是隔离的。管芯接触孔114可以另外地形成在上部金属图案102A的管芯焊盘区上以增强半导体芯片和绝缘层100之间的粘合力。接着可以除去干膜图案110A并可以进行清洗工艺。
参考图13，可以在上部金属图案102A和底部金属图案108A上形成第一电镀层116和第二电镀层118。第一电镀层116和第二电镀层118可以由选自包括金(Au)、镍(Ni)和钯(Pd)的组的单层，或包括选自包括金(Au)、镍(Ni)和钯(Pd)的组的一种的多层构成。第一电镀层116可以涂布在多个通孔的侧壁和底部金属图案上。上部金属层102和底部金属层108可以通过图7所示的毛口电连接。如果上部金属层102和底部金属层108之间的电连接变得不稳定，第一电镀层116可以另外地连接上部金属图案102A和底部金属图案108A。那么上部金属图案102A和底部金属图案108A之间的电连接变得完整，不需要通过使用激光形成微型通孔的附加成本。可以在具有第一和第二电镀层116和118的智能卡模块衬底上进行切割工艺以将其切割为所需尺寸。
依照本发明的示例性实施例，形成衬底的方法可形成上部金属层和底部金属层之间的电连接，而不需要通过使用激光形成微型通孔的附加成本。依照形成衬底的方法，使用施压工艺、钻孔工艺和/或冲孔工艺完成电连接，由此可以降低衬底的制造成本。
依照本发明的示例性实施例，形成衬底的方法可提供可应用于引线接合和/或倒装片接合的衬底。使用依照本发明的示例性实施例的衬底，可以选择引线接合和/或倒装片接合来制造智能卡模块。可以降低更换产品的时间，可以改进智能卡模块的生产率，可以使用依照本发明的示例性实施例形成的衬底，大规模生产智能卡模块。
前述是本发明的示例性实施例的说明，不被视为对其的限制。尽管参考附图中示出的示例性实施例具体地示出并描述了本发明的示例性实施例，本领域技术人员应当理解，在不脱离如权利要求所限定的本发明的示例性实施例的精神和范围内，可以在形式上和细节上进行各种改变。
本申请要求于2005年7月18日在韩国知识产权局(KIPO)申请的韩国专利申请No.10-2005-0064770的优先权，这里引入其全部内容作为参考。

Claims (20)

1.一种衬底，包括：
绝缘层，围绕所述绝缘层的中心部分具有多个通孔；
所述绝缘层的上表面上和所述多个通孔的侧表面上的上部金属图案；
所述绝缘层的下表面上用来支撑所述绝缘层和所述上部金属图案并电连接到所述上部金属图案的底部金属图案；
覆盖所述上部金属图案的所述上表面和所述底部金属图案的上表面的暴露部分的第一电镀层；
所述底部金属图案的下表面上的第二电镀层；和
接触孔，其具有所述多个通孔的侧表面和所述绝缘层的下表面，所述多个通孔的侧表面由所述上部金属图案和所述第一电镀层覆盖，所述绝缘层的下表面由所述底部金属图案和所述第一电镀层支撑。
2.如权利要求1所述的衬底，其中所述绝缘层的所述中心部分上的所述上部金属图案具有管芯接合孔以吸收管芯粘合剂。
3.如权利要求1所述的衬底，其中所述绝缘层由选自包括玻璃织物、环氧树脂、BT树脂、聚合物膜和绝缘粘合剂的组的一种构成。
4.如权利要求1所述的衬底，其中所述衬底的所述接触孔具有用于引线接合的给定尺寸。
5.如权利要求1所述的衬底，其中所述第一电镀层和所述第二电镀层是选自包括金、镍和钯的组的单层，或包括选自包括金、镍和钯的组的一种的多层构成。
6.一种智能卡模块，包括：
如权利要求1所述的衬底；
使用管芯粘合剂，在所述衬底的中心部分形成的管芯焊盘上结合的半导体芯片；
在所述衬底的接触孔中，连接所述半导体芯片和第二电镀层的引线；和
密封所述半导体芯片和所述引线的密封材料。
7.如权利要求6所述的智能卡模块，其中所述智能卡模块还包括：
通过凸点电连接到所述衬底的中心部分的管芯焊盘上的上部金属图案的半导体芯片。
8.如权利要求7所述的智能卡模块，其中所述智能卡模块还包括用于密封所述智能卡模块和所述半导体芯片的密封树脂。
9.如权利要求7所述的智能卡模块，其中所述智能卡模块还包括施加于所述半导体芯片和所述衬底之间的粘合剂。
10.一种制造衬底的方法，该方法包括：
粘合上部金属层和绝缘层；
多个通孔从所述上部金属层的方向贯穿所述上部金属层和所述绝缘层；
将底部金属层按压在所述绝缘层的底部上；
通过构图所述上部金属层和所述底部金属层形成上部金属图案和底部金属图案；和
在所述上部金属图案和所述底部金属图案上形成第一电镀层和第二电镀层。
11.如权利要求10所述的方法，其中在所述上部金属层的贴附期间，在所述上部金属层上涂布用作所述绝缘层的粘合剂。
12.如权利要求11所述的方法，其中当所述绝缘层被用作所述粘合剂时，所述底部金属层的厚度与所述上部金属层的相同或更厚。
13.如权利要求10所述的方法，其中在贴附所述上部金属层期间，层压所述上部金属层和所述绝缘层。
14.如权利要求13所述的方法，其中所述绝缘层由选自包括玻璃织物、环氧树脂、BT树脂、聚合物膜和绝缘粘合剂的组的一种构成。
15.如权利要求10所述的方法，其中所述多个通孔贯穿所述上部金属层和所述绝缘层以将所述上部金属层连接到所述多个通孔的侧表面，并在所述多个通孔的较低部分产生所述上部金属层的变形。
16.如权利要求15所述的方法，其中所述上部金属层的变形是在所述多个通孔的侧表面之下的所述上部金属层上产生的毛口。
17.如权利要求16所述的方法，其中使用施压工艺、钻孔工艺和冲孔工艺之一，在所述多个通孔的较低部分处产生所述毛口。
18.如权利要求10所述的方法，其中在按压所述底部金属层期间，在所述绝缘层的底部涂布粘合剂，所述底部金属层贴附到所述绝缘层的底部，并同时按压所述底部金属层。
19.如权利要求10所述的方法，其中在形成所述上部金属图案和所述底部金属图案期间，进行构图以在所述上部金属层的嵌入半导体芯片的给定区域中形成管芯接合孔。
20.一种制造智能卡模块的方法，包括：
形成依照权利要求10制造的衬底；
使用管芯粘合剂，在所述衬底的中心部分形成的管芯焊盘上接合半导体芯片；
通过引线，在所述衬底的接触孔中连接所述半导体芯片和第二电镀层；以及
以密封材料密封所述半导体芯片和所述引线。
CNA2006101213960A 2005-07-18 2006-07-18 衬底、智能卡模块及制造它们的方法 Pending CN1901183A (zh)

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CN102339404A (zh) * 2010-07-20 2012-02-01 上海长丰智能卡有限公司 一种新型智能卡模块及其生产工艺
CN102339404B (zh) * 2010-07-20 2016-06-15 上海仪电智能电子有限公司 一种新型智能卡模块及其生产工艺
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CN105826209A (zh) * 2011-06-20 2016-08-03 乾坤科技股份有限公司 一种封装结构及其制造方法
CN105826209B (zh) * 2011-06-20 2021-07-13 乾坤科技股份有限公司 一种封装结构及其制造方法

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