CN1157773C - 热加强球型栅极阵列封装的金属芯基质印刷接线板及方法 - Google Patents

热加强球型栅极阵列封装的金属芯基质印刷接线板及方法 Download PDF

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CN1157773C
CN1157773C CNB008061432A CN00806143A CN1157773C CN 1157773 C CN1157773 C CN 1157773C CN B008061432 A CNB008061432 A CN B008061432A CN 00806143 A CN00806143 A CN 00806143A CN 1157773 C CN1157773 C CN 1157773C
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吴英芳
陈锐
鲁靖
陈河旭
张谦为
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Yaowen Electronic Industry Co Ltd
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Abstract

一种热加强面部朝上的BGA基座由金属芯(铜质)、层、介质层、传导性的穿过金属芯以及建立通孔所组成。其具有较佳热效能之新颖而简单的架构，致使较低的成本以及较佳的可靠性。再者，在材质与层数以及每层厚度的选择上，其高度的弹性提供封装应用广泛的范围以及高密度的印刷电路板。

Description

热加强球型栅极阵列封装的金属芯基质印刷接线板及方法
相关申请的引用
本申请基于1999年4月13日提交的题为”致能热加强球型栅极阵列封装之金属芯基质”的临时申请第60/128946号。
背景技术
Prolinx C2BGA
C2BGAs乃是使用复杂的蚀刻可调磁控管之绝缘方法，在芯上产生由一些绝缘材质所悬吊的铜质岛状物以及之后通过表面处理与光照通孔步骤所制造的。对复杂的步骤以及产生复杂的架构而言，所招致的成本乃是相当昂贵的。
发明内容
对于细微程度、高接脚数的半导体封装而言，球型栅极阵列(BGA)乃是一种先进的封装方式，其在今日IC工业中，通常使用于包装集成电路架构的多层芯片上(chip-up)印刷接线板(PWB)基座之中。然而，由于诸如Pentium II & III等高速的CPUs以及高速的制图方式、DSP和可编程逻辑芯片之出现，热散逸仍是主要关心的因素。为了满足21世纪IC产品的需求，因此需要较佳的热BGA封装之解决方式。
本发明的目的为提供一种新颖且较为简单的PWB架构以及方法，具有比得上或较佳的热效能，致使较低的成本与较佳的可靠性。在材质与层数以及每层厚度的选择上，其高度的弹性提供封装应用广泛的范围以及高密度的印刷电路板或PWB。镀铜的通孔同样也提供较佳的热效能，并且对所产生的封装而言致使整体较佳的热效能。
处理步骤同样也已经证明，用来实现封装应用中高密度之相互连接。
附图简述
当结合附图考虑以下的说明时，本发明上述以及其它的目的优点与特点将会是显而易见的，其中相似的参考符号与所相应组件或元件视为同一事物，而且其中：
图1A以剖面图显示合并本发明的初始金属芯架构，
图1B显示在各玻璃纤维层上附加两额外的功能层之后的包含本发明的金属芯架构，
图1C显示包含本发明的五层架构，
图1D显示在图1的架构上使用焊接剂掩蔽涂刷，
图2阐述根据本发明的一种型式1的通孔，
图3阐述根据本发明的一种型式2的通孔，
图4阐述根据本发明的一种型式3的通孔，
图5阐述包含本发明的整体架构之剖视图，以及
图6为包含本发明所完成之具有基座的BGA IC封装之俯视图，其架置于一PWB上，而PWB可以是传统的薄片板或是包含本发明的。
元件符号之说明
110  金属芯
120  建立层
210  铜箔
220  钻孔电镀的穿洞(PTH)
230  玻璃纤维之内预浸渍体
240  遮光或激光钻孔&电镀之通孔
310  顶层建立层
320  建立通孔
330  穿洞钻孔
340  外预浸渍体
350  底层建立层
实施发明的较佳方式
结构
图1A显示在初始的金属芯110形成阶段期间中的架构。图1B显示在起初的两个建立层120制作之后的架构。图1B显示在其架构中的两个钻孔电镀之通孔(PTH)220。如果所需要的是3层的架构210-110-210，则如此便是完整的PWB架构，其较为简单且成本较低。请注意的是，9.45克的铜箔210以及141.747-283.495克的铜芯110为玻璃纤维之预浸渍体层230所绝缘隔离的。同样地，遮光或激光钻孔&电镀的通孔240用来连接到充当接地的金属芯110。在图1C中的五层架构预期更为复杂并且用于高密度的应用中。图1C显示两个额外的建立层310与建立通孔320以及PTH 220。在以下的说明中，我们将集中注意于叙述于图1C中的五层架构，其包含实现于本发明之三种各不相同的通孔型式。
如图2所阐述的，型式1通孔220乃是用来实现同样在图1B、图1C所示的架构中大多数之通孔。型式1之通孔隔离于金属芯并且经由建立通孔320连接到外层，其中的建立通孔320若不是由激光钻孔便是由深度控制的机械式钻孔所得到的。
如图3所阐述的，型式2通孔乃是一种与金属芯相连接的通孔，其中的金属芯典型地用来充当接地平面。藉由直接在金属芯110上的穿洞钻孔330，并且之后藉由电镀来实现型式2之通孔，其产生与金属芯侧壁的连接。
型式2通孔的优点乃是提供从顶层310至金属芯110且之后再到底层350的直接之热传送路径，其对实现封装应用中的热通孔而言乃是理想的。
型式2通孔唯一的缺点乃是侧壁电镀具有与包含金属芯110和预浸渍体230的各层之接触面，以及传导层210、310和预浸渍体之间的接触面，其若不适当地处理，则将会含有细微的裂缝，而让水份渗入。细微的裂缝可能会导致金属芯110和预浸渍体230之间的接触面分解。
如图4所阐述的型式3通孔同样也是一种连接到金属芯110上的接地面之通孔，并且同样也提供金属芯110良好的热路径。型式3之通孔乃是藉由建立芯通孔240和320经激光或深度控制钻孔所实现的，其同样也显示于图1B和1C中。就热效能而言，型式3之通孔乃是良好的，并且不具有如同型式2的通孔之可靠性缺点。
材质
金属芯110较佳的选择为141.747-283.495克或0.127-0.381毫米厚度的铜C194薄片，如图1A所示的。注入金属芯孔洞120的液体可以是PHP900或其等效的材质。
内预浸渍体230若不是具有0.0381-0.0762毫米厚度的玻璃纤维之BT(双顺丁烯亚胺三)是47N。玻璃纤维的成份提供架构的增强功能，藉以对抗金属芯110与预浸渍体材质230之间不匹配的热扩展系数。
外预浸渍体340可以是B.T.或R.C.C(树脂涂层之铜质)材质，典型地使用于激光钻孔之建立。外渍体340的厚度同样也是在0.0381-0.0762毫米的范围之内。尽管对各种的应用而言，广泛的厚度范围乃是适当的(3.544、7.087或14.175克)，而用于非芯层的铜箔210可以是9.45克的厚度。
处理
尽管通过众所周知的印刷电路板技术以及HDI(高密度的相互连接)之制造，而能够接受种种的改变，然以下说明一种较佳的处理步骤之顺序。
1.开始于金属芯110，在通过金属芯的通孔位置上钻孔或蚀刻出洞孔，如图1B和图1C所示的，洞孔的大小大约在于0.635毫米附近(对BGA的应用而言，0.381毫米至0.1016毫米乃是可允许的)。所要注意的是，典型的嵌镶板大小为12”×18”或18”×24”、或者其变化。为了薄片板状的预浸渍体210、230、310、250与340较为良好的附着，在金属表面上执行黑色氧化物之处理。
对条带或单一传送格式中简易的单一特性而言，在第一通孔的钻孔蚀刻步骤期间中，能够将每一个基座单元边缘上的单一线路预先钻孔或预先蚀刻。
2.液体(PHP900)注入洞孔120(如同图1A中所示的密平行线区域)。在较薄的金属芯110之状况下，诸如大约0.127毫米附近的，由于在压成薄片的期间中，内预浸渍体230会自然地流入并且充满洞孔，因此可以不用将液体注入洞孔120。对较厚的金属芯而言，则起初较佳地将其注入洞孔之中。
3.从事预浸渍体230和340之制作。例如，于图1C中，使用具有9.45克铜箔之0.0762毫米的预浸渍体。所要注意的是，为了保持对称的理由，而同时将用于顶侧及底侧的每一预浸渍体层制成薄片。
4.钻制用于与金属芯隔离的通孔之洞孔。钻锥的直径大约为0.254毫米左右用于通孔的激光钻锥或深度控制之机械式钻锥，而其中的通孔连接到金属芯，如图1B所示。所要注意的是，在步骤2，注入预浸渍体材质120的液体流进第一钻孔之中，借助将所电镀的通孔220与金属芯隔离。
5.传送内层210和250的图像，藉以形成垫片及图形电路。
6.以BT或R.C.C材质将外预浸渍体层310和340制成薄片状。如果只是需要3层的架构，则并不需外预浸渍体层310和340。以相同的原理，如果只是需要4层的架构，则并不需底部的BT或R.C.C层。
7.通过激光钻孔或深度控制的机械钻孔，形成建立通孔320。
8.若有需要，则从事型式2通孔之机械洞孔钻孔。
9.将铜质310和350电镀至通孔并且从事嵌镶板之电镀。
10.视Ni/Au电镀技术以及应用的需求而定，停止其步骤。其包含外层以及Ni/Au电镀420的图样传送。
11.焊接掩蔽罩410涂层，如图1D所示的。
12.完成：将其嵌镶板单一化为个别的单元或者成为用于封装组合的条带。
优点
1.用于高热量传导的有效率之对称层以及通孔架构。
2.相较于现有技术，以成熟的处理技术以及已证明的材质，实现相同或较佳的热效能。
3.仅仅需要增加成本，便能提供比塑胶球型栅极阵列(PBGA)更为良好的效能。
本发明特点
1.新颖的铜质芯基架构，使用3层(金属芯+1顶层+1底层)、4层(金属芯+2顶层+1底层)以及5层(金属芯+2顶层+2底层)，用于芯片组合之高热量效能封装。再者，能够简易地建立5或更多层。3和5层的选择乃是对称的，藉以从事较佳的弯曲老化预防。
2.使用钻孔/蚀刻、有所选择地充满液体、制成薄片状、钻孔、以及电镀处理步骤，用来形成通过金属芯的洞孔。
3.激光掩蔽通孔之组合建立于金属芯架构之顶部，赋予用于高密度应用的额外之建立层。
4.藉由电镀建立以及从顶侧和底侧连接到金属芯，致使有效率的热通孔。
5.在第一通孔的钻孔-蚀刻步骤期间中，对条带或单一传送格式中简易的单一特性而言，能够预先钻孔或预先蚀刻每一个基座单元边缘上的单一线路。
6.应用：a)用于热加强微调强度BGAs的金属芯基座，以及b)金属芯基的高密度板，诸如用于高热输出SDRAM DIMM模组的。
尽管已经以本发明相关的实施例来说明本发明，然而将会察知的是对熟习技术者而言，本发明的适合体以及变体乃是显而易见的。

Claims (16)

1.一种制作用于球型栅极集成电路封装的热加强印刷电路接线板基座的方法，其特征在于包含以下的步骤：
a)提供具有相对表面的初始的薄而传导性的金属芯；
b)在每一个多数的通过金属芯之通孔位置上，于该金属芯中形成一个或多个的洞孔；
c)将薄片板状的预浸渍体分别叠至该每一个相对的表面；及
d)将至少一个薄传导层应用于该薄片板状的预浸渍体之其中一个的表面上，并且在该多数的通过金属芯之其中一个通孔位置上，达成至该初始的薄传导金属芯之至少一个的电连接。
2.如权利要求1所述的方法，其特征在于包含在一个或多个通孔的位置上制作一个或多个在此形成的型式1通孔的步骤。
3.如权利要求1所述的方法，其特征在于包含在一个或多个通孔的位置上形成一个或多个在此形成的型式2通孔之步骤。
4.如权利要求1所述的方法，其特征在于包含在一个或多个通孔的位置上形成一个或多个在此形成的型式3通孔之步骤。
5.如权利要求2所述的方法，其特征在于包含在一个或多个通孔的位置上形成一个或多个型式2或型式3通孔之步骤。
6.如权利要求4所述的方法，其特征在于该型式3通孔隔离于金属芯并且连接到外层以建立其通孔。
7.如权利要求3所述的方法，其特征在于该通孔乃是通过直接对金属芯层进行通洞电镀并随后再进行电镀以使侧壁与金属芯发生连接来完成。
8.如权利要求1所述的方法，其特征在于该多数个通过金属芯的通孔位置乃是钻孔、电镀的通洞。
9.如权利要求1所述的方法，其特征在于该通孔乃是通过印刷建立以及将其顶侧和底侧两者连接到金属芯所制作的。
10.如权利要求1所述的方法，其特征在于包含在该基座边缘形成单一线路的步骤，其中可以在条带中每一单一特性的第一通孔的钻孔步骤中对基座预先进行钻孔或蚀刻，或者可以对基座进行单一化以传送格式。
11.一种用于球型栅极集成电路封装的热加强印刷电路接线板，其特征在于包含：
一相对较薄、传导性的金属芯层，它具有互相相对的表面，并且在多个通孔位置上的金属芯中具有一个或多个洞孔，
第一和第二薄片板状的预浸渍体，分别附着于该相对面的表面，以及
至少一个在该薄片板状的预浸渍体，以及其上的多数个通孔上的至少一个上的传导性电路图样。
12.如权利要求11所述的印刷电路接线板，其特征在于包含多个通过电镀建立并且从其顶侧及底侧连接到金属芯所制作的通孔。
13.如权利要求11所述的印刷电路接线板，其特征在于该传导性的金属芯层乃是0.127-0.381毫米的厚度范围内之铜质，而该薄片板则是玻璃纤维的。
14.如权利要求13所述的印刷电路接线板，其特征在于其上包含一个或多个额外的非传导以及传导层。
15.如权利要求11所述的印刷电路接线板，其特征在于包含多数个在此形成的型式1、型式2或型式3中所选出的通孔。
16.如权利要求12所述的印刷电路接线板，其特征在于包含多数个在此形成的型式1、型式2或型式3中所选出的通孔。
CNB008061432A 1999-04-13 2000-04-13 热加强球型栅极阵列封装的金属芯基质印刷接线板及方法 Expired - Fee Related CN1157773C (zh)

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