CN1157758C - 等离子体蚀刻设备 - Google Patents

等离子体蚀刻设备 Download PDF

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Publication number
CN1157758C
CN1157758C CNB991180909A CN99118090A CN1157758C CN 1157758 C CN1157758 C CN 1157758C CN B991180909 A CNB991180909 A CN B991180909A CN 99118090 A CN99118090 A CN 99118090A CN 1157758 C CN1157758 C CN 1157758C
Authority
CN
China
Prior art keywords
cathode electrode
lcd glass
female substrate
plasma
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB991180909A
Other languages
English (en)
Chinese (zh)
Other versions
CN1246724A (zh
Inventor
朴昌勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1246724A publication Critical patent/CN1246724A/zh
Application granted granted Critical
Publication of CN1157758C publication Critical patent/CN1157758C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CNB991180909A 1998-08-26 1999-08-25 等离子体蚀刻设备 Expired - Fee Related CN1157758C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR34587/1998 1998-08-26
KR34587/98 1998-08-26
KR1019980034587A KR100275671B1 (ko) 1998-08-26 1998-08-26 플라즈마 식각 설비

Publications (2)

Publication Number Publication Date
CN1246724A CN1246724A (zh) 2000-03-08
CN1157758C true CN1157758C (zh) 2004-07-14

Family

ID=19548300

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB991180909A Expired - Fee Related CN1157758C (zh) 1998-08-26 1999-08-25 等离子体蚀刻设备

Country Status (4)

Country Link
JP (1) JP4487026B2 (ko)
KR (1) KR100275671B1 (ko)
CN (1) CN1157758C (ko)
TW (1) TW472320B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127041A (ja) * 1999-10-26 2001-05-11 Matsushita Electric Ind Co Ltd 基板のプラズマ処理装置およびプラズマ処理方法
TW510008B (en) * 2000-10-23 2002-11-11 Applied Materials Inc Monitoring substrate processing using reflected radiation
CN102969361B (zh) * 2011-09-01 2015-09-23 中国科学院微电子研究所 光照稳定性非晶态金属氧化物tft器件以及显示器件
KR101384980B1 (ko) * 2012-06-25 2014-04-14 주식회사 테스 플라즈마 발생장치 및 이를 포함하는 박막증착장치
CN105225989B (zh) * 2015-10-13 2018-12-28 京东方科技集团股份有限公司 等离子刻蚀机
CN108711546B (zh) * 2018-04-28 2019-07-23 武汉华星光电技术有限公司 下电极及干蚀刻机
CN111970838B (zh) * 2020-08-24 2021-09-21 泉州市创智工业设计服务有限公司 一种用于生产电路板的蚀刻机

Also Published As

Publication number Publication date
TW472320B (en) 2002-01-11
KR100275671B1 (ko) 2001-02-01
KR20000014935A (ko) 2000-03-15
CN1246724A (zh) 2000-03-08
JP2000091328A (ja) 2000-03-31
JP4487026B2 (ja) 2010-06-23

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG DISPLAY CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20121102

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121102

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040714

Termination date: 20180825