472320 五、發明說明（1) 曼货領域 本發明係有關電漿蝕刻裝置，更明確而言，係有關 具有改良式負極電極保護性覆蓋物之電聚钱刻裝置，其避 免陰極電極及置於陰極電極上之液晶顯示器(lcd)基板間 於蝕刻方法期間產生間隙。再者，電漿蝕刻裝置能避免形 成於LCD玻璃基板之側表面上之光阻因lcd玻璃基板之冷 卻效率因間隙而降解而被埋入。本發明亦係有關使用電毁 姓刻裝置製備之液晶模組。 iiii技藝之描 -般，如第1圖所示’用於LCD裝置之開關元件之薄 膜電晶體（TFT)10包含：SiNx絕緣層2，其係藉由沈積技術 形成’如此’閘極1被絕緣；半導體層3，其係形成於絕緣 層2上；歐姆接觸層4 ’其形成於半導體層3;源極，其形 成於歐姆接觸層4左側部份上；源極，其形成於歐姆接觸 層4之右部份；及保護層7，其形成於半導體層3之曝露出 之部份。 為提供電说號之傳送路徑，接觸洞8藉由電聚姓刻方 ㈣成㈣護層7之選擇部份。於形成接觸洞後，氧化鋼 錫（_之透明電極9(作為像素電極）形成於包含接觸洞8 之絕緣層2,藉此，TFT基質被完成之。 於形成前述TFT基質10時，钱刻方法被應用於形成問 極圖案、絕緣層圖案、半導體層圖案、歐姆接觸層圖案、 源極圖案、源極圖案及ITO圖案。 472320472320 V. Description of the invention (1) In the field of cargo, the present invention relates to a plasma etching device, and more specifically, to an electro-encapsulation device with an improved negative electrode protective covering, which avoids the cathode electrode and the A gap is generated between liquid crystal display (lcd) substrates on the cathode electrode during the etching method. Furthermore, the plasma etching device can prevent the photoresist formed on the side surface of the LCD glass substrate from being buried due to the cooling efficiency of the LCD glass substrate due to the gap. The present invention also relates to a liquid crystal module prepared by using an electro-destructed device. iiii The description of the technology-as shown in Figure 1, 'Thin film transistor (TFT) 10 for a switching element of an LCD device includes: a SiNx insulating layer 2, which is formed by a deposition technique such that the gate electrode 1 is Insulation; semiconductor layer 3, which is formed on insulating layer 2; ohmic contact layer 4 ', which is formed on semiconductor layer 3; source, which is formed on the left part of ohmic contact layer 4, and source, which is formed on ohmic contact A right portion of the layer 4; and a protective layer 7 formed on the exposed portion of the semiconductor layer 3. In order to provide a transmission path for the electric signal, the contact hole 8 is carved into a selected part of the protective layer 7 by means of the electric poly surname. After the contact holes are formed, a transparent electrode 9 (as a pixel electrode) of steel tin oxide (_ is formed on the insulating layer 2 including the contact holes 8), thereby completing the TFT substrate. When the aforementioned TFT substrate 10 is formed, money is carved The method is applied to form an interlayer pattern, an insulating layer pattern, a semiconductor layer pattern, an ohmic contact layer pattern, a source pattern, a source pattern, and an ITO pattern.
五、發明說明（2) 各種蝕刻裝置被用於施行此等蝕刻方法。最近，提 供一種雙電漿蝕刻裝置’其具有增加之效率。此雙電聚钱 刻裝置包含一對陰極’其係置於絕緣體之上及底表面，且 以置於每一陰極電極上之LCD玻璃基板施行蝕刻方法。 參考第2及3圖’傳統之電將蝕刻裝置3〇包含一對板 狀陰極電極36 ’其係置於絕緣層32之上及底表面。於第2 及3圖中，其僅顯示一陰極電極36。用以夾LCD玻璃基板忉 之夾子34被置於陰極電極36上。裝置3〇亦包含用以旋轉陰 極電極36之及施以無線電頻率（RF)電力至陰極電極％之電 極旋轉裝置（未示出）。 陰極電極36規格上係稍大於LCD玻璃基板1〇，如此當 LCD玻璃基板ι〇被置於陰極電極上時，可確保用以失住 LCD玻璃基板丨〇之端緣i〇a之夾子μ之空間。 夾子34被用於固定LCD玻璃基板1〇及使LCD玻璃基板 1〇與陰極電極36以預定間隔而間隔之。 火子3 4之固疋作用藉由形成數個沿著陰極電極.3 6之 端緣之穿透孔，經穿透孔洞插入圓柱形上升桿34c，及結 合突出陰極電極36之上表面外側之上升桿及具有數個用以 直接加壓LCD玻璃基板1〇之失子341)之支撐框34a而實現。 此時，於使夾子34b緊密壓住陰極電極36之上表面， 用以產生加壓力量之陰極加壓元件37係需要的。 陰極加壓元件37係，例如，張力彈簧37a，其具有預 疋之彈力杈I。突出於陰極電極36之底表面外之上升桿Me 被插入張力彈簧37&且張力彈簧被固定以便不會自上升桿 五、發明說明（3) 3 4c滑開。 藉由張力彈簧37a’上升桿34c使置於陰極電極36上之 支撐框34a拉向陰極電極36。藉此，置於陰極電極36上之 LCD玻璃基板藉由夾子％及支撐·框34a強力加壓。 另一方面’為藉由夾子34使LCD玻璃基板丨〇與陰極電 極36分開，穿透孔經由LCD玻璃基板1〇及陰極電極％形成 。上升栓（未示出）被插入穿透孔且上升栓之一端被結合至 上升桿34c。然後，上升栓之置放依上升桿34c之垂直移動 而產生。因此，LCD玻璃基板藉由夾子34與陰極電極36分 開。 此日rr ’由於上升桿34c之存在，LCD玻璃基板1〇係小 於藉由數個陰極電極36之上升桿34c所形成之區域，如第3 圖所示。結果，未被以LCD玻璃基板1〇覆蓋之陰極電極％ 之端緣部份於蝕刻方法期間被曝露於電漿周圍。於電漿蝕 刻於使陰極電極36之端緣部份曝露出之條件下施行之情況 中’陰極電極36之端緣部份被嚴重受損。 為保護陰極電極36免於因此一條件而受損，被預期 叉損之陰極電極36之端緣部份被處理以具有分段式結構。 <·、’、:後保護覆蓋物3 8之陰極電極被以使陰極電極％之分段 式端緣部份以陰極電極保護覆蓋物38保護之方式固定於陰 極電極3 6 。 再次參考第3圖之截面圖，陰極電極保護覆蓋物38與 陰極電極36表面間之最大差值ΔΤ係0.7mm。換言之’陰 極電極保4覆蓋物38之上表面被放置在低於陰極電極％ 472320 五、發明說明（4) 上表面0.7mm。 於使LCD玻璃基板1〇載入陰極30,夾子34之支撐框34a 被握住且緩慢移動。當如前所述僅支撐框34a以使陰極30 被固定之條件下於陰極電極30上移動，上升桿34c及上升 检被以與支撐框34a相關者移動，且預定之間隙形成於支 撑框34a及陰極電極36之間。 此時’藉由自動機葉片轉移之LCD玻璃基板被載入陰 極電極36與支撐框34a之間，然後被置於上升栓上。 其後’於自動機葉片被卸下且支撐框34a被向下移動 之同時’ LCD玻璃基板1〇被置於陰極電極36上且lcd玻璃 .基板10藉由夾子34之夾子34b強力加壓。 但是，當LCD玻璃基板1〇以夾子34強力加壓時，LCD 玻㈣基板之端緣部份變得低於其中心部份之高度，因為陰 極屯極保護覆蓋物3 8被置於低於陰極電極3 6，如第4圖所 。 因此’與作用於LCD玻璃基板10之端緣部份之加壓力 里之相對方向之力量產生於LCD玻璃基板10之中心部份。 結果’ LCD玻璃基板之中心部份藉由預定間隙與陰極電極 3 6分開。 於使間隙G產生於LCD玻璃基板10中心部份與陰極電 極36之間之條件下’電漿蝕刻方法期間產生之熱不被藉由 陰極電極36冷卻且沿著已被沈積於lCD嵌板上之金屬圖案 轉移至形成於LCD玻璃基板1〇上之LCD嵌板之端緣。結果 ’金屬圖案之端部份被加熱至高溫。 五、發明說明（5) 菖LCD玻璃基板未被冷卻完全時’多於一半之lcd嵌 板，例如，LCD玻璃基板1〇之6單元LCD嵌板八至1：(如第5 固所示）不此抵抗南溫且塗覆於Lcd鼓板上之光阻被燃燒 ’造成對LCD嵌板之最差損害。 第5圖之參數35a係燃燒光阻。 主發明之綜沭 因此，本發明之目的係藉由使LCD玻璃基板之中心部 份與陰極電極接觸而無任何間隙形成於其間，俾以保護光 阻免於被燃燒，藉此，避免藉由陰極電極冷卻之Lcd玻璃 基板之冷卻效率被降低。 本發明之其它目的以其後之描述會更明顯。 為達成上述及其它目的，本發明提供一種電漿蝕刻 裝置，其間，為避免陰極之陰極電極之上表面與[CD玻璃 基板之下表面分開，用以保護陰極電極免於受損之陰極電 極保護覆蓋物之上表面被固定於高於陰極電極之上表面， 且LCD玻璃基板之端緣部份被強力壓向L(：D玻璃基板之中 卩伤，如此，LCD玻璃基板不會自陰極電極滑開，且間 隙不會產生於LCD玻璃基板與陰極電極之間。 Μ示簡要說明 第1圖係傳統TFT截面圖。 第2圖係傳統電漿蝕刻裝置之陰極之部份透視圖： 第3圖係取自第2圖之線A-A之載面圖； 第4圖係顯不當LCD玻璃基板藉由傳統夾子固定時之 形成於陰極及L C D玻璃基板之中心部份之間之間隙之概念 4723205. Description of the Invention (2) Various etching devices are used to perform these etching methods. Recently, a double plasma etching apparatus' has been provided which has an increased efficiency. This electric double electric money engraving device includes a pair of cathodes' which are placed on an insulator and a bottom surface, and an etching method is performed on an LCD glass substrate placed on each of the cathode electrodes. Referring to Figs. 2 and 3, the conventional electric etching apparatus 30 includes a pair of plate-like cathode electrodes 36 'which are placed on the insulating layer 32 and the bottom surface. In FIGS. 2 and 3, only one cathode electrode 36 is shown. A clip 34 for holding the LCD glass substrate 忉 is placed on the cathode electrode 36. The device 30 also includes an electrode rotating device (not shown) for rotating the cathode electrode 36 and applying radio frequency (RF) power to the cathode electrode%. The size of the cathode electrode 36 is slightly larger than that of the LCD glass substrate 10. Therefore, when the LCD glass substrate ι is placed on the cathode electrode, it is possible to ensure that the clip μ used to lose the edge i〇a of the LCD glass substrate space. The clip 34 is used to fix the LCD glass substrate 10 and space the LCD glass substrate 10 and the cathode electrode 36 at a predetermined interval. The solidification effect of Huozi 34 is formed by forming several penetration holes along the end edge of the cathode electrode 36, and inserting the cylindrical rising rod 34c through the penetration hole, and combining with the protruding outer side of the upper surface of the cathode electrode 36 The rising rod and the supporting frame 34a are provided with a plurality of lost frames 341) for directly pressing the LCD glass substrate 10. At this time, a cathode pressing element 37 for generating a pressing force is required to press the clip 34b tightly against the upper surface of the cathode electrode 36. The cathodic pressure element 37 is, for example, a tension spring 37a, which has a pre-stretched spring force I. The rising rod Me protruding beyond the bottom surface of the cathode electrode 36 is inserted into the tension spring 37 & and the tension spring is fixed so as not to slide away from the rising rod. 5. Description of the invention (3) 3 4c. The support frame 34a placed on the cathode electrode 36 is pulled toward the cathode electrode 36 by the tension spring 37a 'ascending lever 34c. Thereby, the LCD glass substrate placed on the cathode electrode 36 is strongly pressed by the clip% and the support and frame 34a. On the other hand, the LCD glass substrate 10 is separated from the cathode electrode 36 by the clip 34, and a through hole is formed through the LCD glass substrate 10 and the cathode electrode%. A rising bolt (not shown) is inserted into the penetration hole and one end of the rising bolt is coupled to the rising rod 34c. Then, the placement of the ascending bolt is caused by the vertical movement of the ascending lever 34c. Therefore, the LCD glass substrate is separated from the cathode electrode 36 by the clip 34. Due to the existence of the rising rod 34c on this day, the LCD glass substrate 10 is smaller than the area formed by the rising rod 34c of the plurality of cathode electrodes 36, as shown in FIG. As a result, the edge portion of the cathode electrode% not covered with the LCD glass substrate 10 was exposed to the periphery of the plasma during the etching method. In the case where the plasma etching is performed under the condition that the end edge portion of the cathode electrode 36 is exposed, the end portion of the 'cathode electrode 36 is severely damaged. In order to protect the cathode electrode 36 from being damaged by such a condition, the edge portion of the cathode electrode 36 which is expected to be forked is treated to have a segmented structure. <, ',: The cathode electrode of the rear protective cover 38 is fixed to the cathode electrode 3 6 in such a manner that the segmented end portion of the cathode electrode% is protected by the cathode electrode protective cover 38. Referring again to the sectional view of FIG. 3, the maximum difference ΔT between the surface of the cathode electrode protective cover 38 and the cathode electrode 36 is 0.7 mm. In other words, the upper surface of the cathode electrode 4 cover 38 is placed below the cathode electrode% 472320 V. Description of the invention (4) The upper surface is 0.7 mm. When the LCD glass substrate 10 is loaded on the cathode 30, the support frame 34a of the clip 34 is held and moved slowly. When only the frame 34a is supported as described above to move the cathode electrode 30 under the condition that the cathode 30 is fixed, the rising rod 34c and the rising test are moved in relation to the support frame 34a, and a predetermined gap is formed in the support frame 34a. And the cathode electrode 36. At this time ', the LCD glass substrate transferred by the automaton blade is loaded between the cathode electrode 36 and the support frame 34a, and then placed on the rising pin. Thereafter, "while the blades of the robot are removed and the support frame 34a is moved downward", the LCD glass substrate 10 is placed on the cathode electrode 36 and the LCD glass. The substrate 10 is strongly pressurized by the clip 34b of the clip 34. However, when the LCD glass substrate 10 is strongly pressurized with the clip 34, the end edge portion of the LCD glass substrate becomes lower than the height of its center portion, because the cathode protective cover 38 is placed below The cathode electrode 36 is as shown in FIG. 4. Therefore, a force in a direction opposite to the pressing force acting on the edge portion of the LCD glass substrate 10 is generated in the center portion of the LCD glass substrate 10. As a result, the center portion of the LCD glass substrate is separated from the cathode electrode 36 by a predetermined gap. Under the condition that the gap G is generated between the center portion of the LCD glass substrate 10 and the cathode electrode 36, the heat generated during the plasma etching method is not cooled by the cathode electrode 36 and is deposited along the CD panel. The metal pattern is transferred to the edge of the LCD panel formed on the LCD glass substrate 10. As a result, the end portion of the metal pattern is heated to a high temperature. V. Description of the invention (5) 时 When the LCD glass substrate is not completely cooled, more than half of the LCD panel is used, for example, LCD glass substrate 10 to 6 unit LCD panel 8 to 1: (as shown in the fifth solid) The photoresist which is not resistant to the South temperature and is coated on the LCD drum plate is burnt, causing the worst damage to the LCD panel. Parameter 35a in Fig. 5 is a burning photoresist. Summary of the main invention Therefore, the object of the present invention is to prevent the photoresist from being burned by contacting the center portion of the LCD glass substrate with the cathode electrode without any gap formed therebetween, thereby avoiding The cooling efficiency of the cathode-cooled Lcd glass substrate is reduced. Other objects of the present invention will become apparent from the following description. In order to achieve the above and other objectives, the present invention provides a plasma etching device, in which the upper surface of the cathode electrode of the cathode is separated from the lower surface of the [CD glass substrate] to protect the cathode electrode from damage. The upper surface of the cover is fixed higher than the upper surface of the cathode electrode, and the edge portion of the LCD glass substrate is strongly pressed against the L (: D glass substrate, so that the LCD glass substrate does not escape from the cathode electrode. Sliding open, and the gap will not be generated between the LCD glass substrate and the cathode electrode. Figure 1 shows a brief description. Figure 1 is a cross-sectional view of a conventional TFT. Figure 2 is a perspective view of the cathode of a conventional plasma etching device: Figure 3 The figure is taken from the line AA of Figure 2; Figure 4 shows the concept of the gap formed between the cathode and the center portion of the LCD glass substrate when the LCD glass substrate is improperly fixed by a traditional clip 472320
五、發明說明（6) 圖； 第5圖係包含傳統六個具有燃燒光阻部份之嵌板 之LCD玻璃基板之上視圖； 第6圖係依據本發明之電漿蝕刻裝置之透視圖； 第7圖係沿第6圖之線之截面圖； 第8圖係依據本發明之陰極之擴張透視圖； 第9圖係第8圖之陰極之部份破裂之透視圖； 第10圖係第9圖之部份之近視圖； 第11圖係依據本發明之失子之戴面圖； 第12圖係圖示具有高於陰極電極之上表面之上表面 之陰極電極保護覆蓋物之作用；及 第13圖係用以操作夹子之夾子桿驅動單元之概念圖 〇 施例之詳細摇诚 依據本發明之電漿蝕刻裝置現將參考附圖作更詳細 之描述，且其製得之LCD模組將以較佳實施例描述之。 第6圖係依據本發明之電漿蝕刻裝置之透視圖。第7 圖係取第6圖之線B-B之截面圖。 參考第6及7圖，依據本發明之電漿蝕刻裝置5〇〇包 s .包漿腔室200 ;陰極3〇〇，其上被置以藉由電漿蝕刻之 LCD玻璃基板，及陽極4〇〇 ;電漿來源氣體供應裝置1仙； 陰極旋轉裝置15〇;排氣裝置450; &RF產生器18〇,其用 以供應陰極3〇〇rf電力。 電漿腔室200具有包含如第6圖所示之預定空間之六 472320 五、發明說明（7) 角形。用以插入及移除藉由自動機葉片（未示出）方式之欲 被以電漿蝕刻之LCD玻璃基板之LCD玻璃基板門200被以 第6圖之方向II形成於電漿腔室200之一側。 陰極300被旋轉置入電漿腔室200。藉由旋轉置入陰 極3 00，二個LCD玻璃基板可同時夾於陰極300上且以電漿 處理之。 陰極旋轉裝置150被置於電漿腔室200之外側以便以 選定之速率旋轉陰極300。陰極旋轉裝置150經由旋轉軸312 與陰極300結合。 另一方面，用以供應陰極300之旋轉軸312RF動力之RF 產生器180被置於鄰近陰極旋轉裝置150。 對於電漿方法，陽極400及用以喷灑自電漿來源氣體 供應裝置160供應之來源氣體之之喷灑裝置（未示出）被進 一步配置之。喷灑裝置被置於陰極300及陽極400之間。 陽極400被置於相對應於第6圖之方向I之電腔室200之 相對二側之每一者。陽極400作為用以保持及清潔電漿腔 而開關及被埋入之主要門。 此時，連接至來源氣體供應裝置160之管線被埋入相 對應於其間陽極被配置之側之電漿腔室200之側内。來源 氣體被供應之交插喷灑之喷嘴，其經由管線形成於陰極300 及陽極400之間。然後，供應之來源氣體被噴向陰極300。 當所有LCD玻璃基板被載於陰極300上時，陰極300藉 由陰極旋轉裝置150旋轉成平行於陽極400。然後，電漿方 法被施行之。 10 472320V. Description of the invention (6) Figure; Figure 5 is a top view of an LCD glass substrate including six conventional panels with a burning photoresist; Figure 6 is a perspective view of a plasma etching device according to the present invention; Fig. 7 is a sectional view taken along the line of Fig. 6; Fig. 8 is an expanded perspective view of a cathode according to the present invention; Fig. 9 is a perspective view of a partially broken cathode of Fig. 8; A close-up view of a part of FIG. 9; FIG. 11 is a wearing view of a lost child according to the present invention; and FIG. 12 is a diagram illustrating a role of a cathode electrode protective covering having a surface higher than a surface above the cathode electrode; And FIG. 13 is a conceptual diagram of a clip lever driving unit for operating a clip. The details of the embodiment. The plasma etching device according to the present invention will now be described in more detail with reference to the accompanying drawings, and the LCD mold made by the same. The group will be described in a preferred embodiment. Fig. 6 is a perspective view of a plasma etching apparatus according to the present invention. Figure 7 is a sectional view taken along line B-B of Figure 6. Referring to FIGS. 6 and 7, a plasma etching apparatus according to the present invention is 500 packs. The slurry chamber 200; the cathode 300 is placed on the LCD glass substrate etched by the plasma, and the anode 4 〇; plasma source gas supply device 1 cents; cathode rotation device 150; exhaust device 450; & RF generator 180, which is used to supply cathode 300rf power. The plasma chamber 200 has a sixth space including a predetermined space as shown in FIG. 6 472320 V. Description of the invention (7) Angle. An LCD glass substrate door 200 for inserting and removing an LCD glass substrate to be etched by plasma by means of an automaton blade (not shown) is formed in the plasma chamber 200 in the direction II of FIG. 6. One side. The cathode 300 is rotated into the plasma chamber 200. By rotating the cathode 300, two LCD glass substrates can be clamped on the cathode 300 at the same time and treated with plasma. The cathode rotation device 150 is placed outside the plasma chamber 200 to rotate the cathode 300 at a selected rate. The cathode rotation device 150 is coupled to the cathode 300 via a rotation shaft 312. On the other hand, an RF generator 180 for supplying RF power to the rotating shaft 312 of the cathode 300 is placed adjacent to the cathode rotation device 150. For the plasma method, the anode 400 and a spraying device (not shown) for spraying the source gas supplied from the plasma source gas supply device 160 are further configured. The spraying device is placed between the cathode 300 and the anode 400. The anode 400 is placed on each of two opposite sides of the electric chamber 200 corresponding to the direction I in FIG. 6. The anode 400 serves as a main door for opening and closing and maintaining and cleaning the plasma cavity. At this time, the pipeline connected to the source gas supply device 160 is buried in the side of the plasma chamber 200 corresponding to the side where the anode is disposed. The interspersed spray nozzles from which the source gas is supplied are formed between the cathode 300 and the anode 400 via a pipeline. Then, the supplied source gas is sprayed toward the cathode 300. When all the LCD glass substrates are carried on the cathode 300, the cathode 300 is rotated parallel to the anode 400 by the cathode rotation device 150. Then, the plasma method is implemented. 10 472320
五、發明說明（s) 於具有相對大重量之二LCD玻璃基板被夹於其上之條 件下’於陰極被向上配置至重力方向之條件下，陰極3〇之 結構將參考第8至1 〇圖詳細描述之。 第8圖係依據本發明之陰極之擴散式透視圖。第9圖 係第8圖之陰極之部份斷裂之透視。第丨〇圖係第9圖之c部 份之近視圖。 參考第8圖’陰極300包含：絕緣體3 1 〇，其間置以旋 轉軸3 12，一對陰極電極320，其被附接至絕緣體3 ] 〇之上 及下表面，陰極電極保護覆蓋物33〇，其用以保護陰極電 極320之端緣部份免於受電漿而損害；一對[CD玻璃基板 失钳裝置340 ’其用以緊密固定置於陰極電極32〇上之[CD 玻璃基板且藉此使LCD玻璃基板免於自陰極電極32〇滑出 ’及LCD玻璃基板上升裝置350 ’其使lcd玻璃基板與陰 極電極320以預定之高度分隔之。 更特別而言’絕緣體3 10具有矩形塊狀。數對上及下 凹槽3 14形成於絕緣體3 1 〇之三侧。如第8圖所示，此對上 、下凹槽3 14以預定間隔彼此分開。作為實施例，凹槽3 14 具有六角形。 LCD玻璃基板上升裝置350被置於凹槽314内。 如第8圖所示’ LCD玻璃基板上升裝置350包含：上升 桿352，其具有預定長度；上升栓支撐板354，其具有矩形 板开》狀且包含與上升桿352之底部352a以與上升桿352呈直 角結合之；上升栓356，其被以使上升栓356具有與上升桿 352之置換呈相同方向而置換之方式置於上升栓支撐板354 472320 五、發明說明（9) 之其它端；及張力彈簧358，其被置於上升桿352上。 於LCD玻璃基板上升裝置350被插入絕緣體310之凹槽 314内後，上下陰極電極320被個別固定於絕緣體3 1 0之上 下表面。 陰極電極320具有厚板形狀，其具有預定厚度及相同 於絕緣體3 10之平面面積之平面面積。上升桿結合孔洞322 及上升栓合孔洞324形成於相對應於被插入凹槽3 14内之 LCD玻璃基板上升裝置350之上升桿352及上升栓356之陰 極電極320之端緣之選定部份。 如第8圖所示，陰極電極320具有分段式結構。其間 上升桿結合孔洞322被形成之陰極電極320之端緣部份326 係稍薄於其間上升栓結合洞324被形成之部份。 陰極電極320大部份以LCD玻璃基板覆蓋，因此，不 受電漿之損害。但是，陰極電極320之端緣部份可於電漿 方法期間藉由電漿而嚴重受損，因為陰極電極320之端緣 部份326被曝露於電漿。 為保護陰極電極320之端緣部份326免於受損，具有 高抗電漿性之陰極電極保護覆蓋物330被置放且與陰極300 之端緣部份3 2 6結合。 陰極電極保護覆蓋物330具有一呈角度之環形狀，且 被置入陰極電極320之分段式端緣部份326内。陰極電極保 護覆蓋物330包含經過於相對應於上升桿352之選定位置形 成之孔332之上升桿，如此，LCD玻璃基板上升裝置之上 升桿352可突出陰極電極保護覆蓋物330之外側。 12 472320 五、發明說明（ίο) 期望陰極電極保護覆蓋物330係由具有高抗電漿性之 陶瓷材料組成。亦期望陰極電極保護覆蓋物330之上表面 稍高於陰極電極320之上表面，換言之，陰極電極保護覆 蓋物330被置於高於陰極電極320，結果，陰極電極保護覆 蓋物330及陰極電極320形成分段式表面，其將於其後描述 之。 LCD玻璃基板夾鉗裝置40被置於陰極電極保護覆蓋物 330 上。 LCD玻璃基板夾鉗裝置340包含：矩形環狀支撐框342 ，其藉由使桿狀框呈一角度以具有相同於LCD玻璃基板之 大小形成之；及數個失鉗345，其沿著支撐框配置，用以 直接地夾住LCD玻璃基板305。 此時，如第11圖所示，夾鉗345包含：固定於支撐框342 之圓柱形固定桿345a ;圓形夾鉗板345b，其包含形成於其 間之孔，用以插入固定桿345a ;置於固定桿345a之彈簧， 用以使失甜板3 4 5 b加壓；及圓柱形夾甜覆蓋物3 4 5 d，其包 覆彈簧345c，用以保護固定桿345a及彈簧345c免於受電漿 之損害。 因此，當置於陰極電極320上之LCD玻璃基板305之端 緣部份被第11圖之夾鉗345之D或E部份加壓時，LCD玻璃 基板305藉由彈簧345c強烈加壓於夾鉗板345b之彈力而傾 斜，且置於陰極電極320上之LCD玻璃基板305之端緣部份 被強烈加壓。 此時，負載於其間夾鉗板345b突出之LCD玻璃基板305 13 472320V. Description of the invention (s) Under the condition that a relatively large weight of two LCD glass substrates are sandwiched thereon, 'under the condition that the cathode is arranged upward to the direction of gravity, the structure of the cathode 30 will refer to the eighth to tenth. The figure describes it in detail. Fig. 8 is a diffusion perspective view of a cathode according to the present invention. Fig. 9 is a perspective view of a part of the cathode in Fig. 8 being broken. Figure 丨 〇 is a close-up view of part c of Figure 9. Referring to FIG. 8 'the cathode 300 includes an insulator 3 1 0 with a rotating shaft 3 12 interposed therebetween, a pair of cathode electrodes 320 attached to the upper and lower surfaces of the insulator 3] 0, and a cathode electrode protective cover 33. , Which is used to protect the end portion of the cathode electrode 320 from being damaged by the plasma; a pair of [CD glass substrate unclamping device 340 'is used to tightly fix the [CD glass substrate and borrow This protects the LCD glass substrate from sliding out from the cathode electrode 32 ′ and the LCD glass substrate raising device 350 ′, which separates the LCD glass substrate from the cathode electrode 320 at a predetermined height. More specifically, the 'insulator 3 10 has a rectangular block shape. The pairs of upper and lower grooves 3 14 are formed on three sides of the insulator 3 1 0. As shown in FIG. 8, the pair of upper and lower grooves 3 14 are separated from each other at a predetermined interval. As an example, the groove 3 14 has a hexagonal shape. The LCD glass substrate raising device 350 is placed in the groove 314. As shown in FIG. 8 ', the LCD glass substrate rising device 350 includes: a rising rod 352 having a predetermined length; a rising bolt support plate 354 having a rectangular plate opening shape and including a bottom portion 352a of the rising rod 352 to communicate with the rising rod 352 is combined at a right angle; the rising bolt 356 is placed on the rising bolt support plate 354 472320 in such a manner that the rising bolt 356 has the same direction as the replacement of the rising rod 352 472 320 5. The other end of the invention description (9); And tension spring 358, which is placed on the rising rod 352. After the LCD glass substrate raising device 350 is inserted into the groove 314 of the insulator 310, the upper and lower cathode electrodes 320 are individually fixed on the upper and lower surfaces of the insulator 3 10. The cathode electrode 320 has a thick plate shape having a predetermined thickness and a planar area equal to a planar area of the insulator 3-10. The ascending pole coupling hole 322 and the ascending bolt hole 324 are formed at selected portions of the end edges of the cathode electrode 320 corresponding to the ascending pole 352 and the ascending bolt 356 of the LCD glass substrate ascending device 350 inserted into the groove 314. As shown in FIG. 8, the cathode electrode 320 has a segmented structure. The edge portion 326 of the cathode electrode 320 in which the rising rod coupling hole 322 is formed is slightly thinner than the portion in which the rising bolt coupling hole 324 is formed. The cathode electrode 320 is mostly covered by the LCD glass substrate, and therefore, it is not damaged by the plasma. However, the edge portion of the cathode electrode 320 may be severely damaged by the plasma during the plasma method because the edge portion 326 of the cathode electrode 320 is exposed to the plasma. In order to protect the edge portion 326 of the cathode electrode 320 from being damaged, a cathode electrode protective cover 330 having high plasma resistance is placed and combined with the edge portion 3 2 6 of the cathode 300. The cathode electrode protective cover 330 has an angled ring shape and is placed in the segmented end edge portion 326 of the cathode electrode 320. The cathode electrode protection cover 330 includes a riser rod passing through a hole 332 formed at a selected position corresponding to the riser rod 352. Thus, the riser rod 352 above the LCD glass substrate lifting device can protrude outside the cathode electrode protection cover 330. 12 472320 V. Description of the Invention (ίο) It is expected that the cathode electrode protective cover 330 is composed of a ceramic material with high plasma resistance. It is also desirable that the upper surface of the cathode electrode protective cover 330 is slightly higher than the upper surface of the cathode electrode 320. In other words, the cathode electrode protective cover 330 is placed higher than the cathode electrode 320. As a result, the cathode electrode protective cover 330 and the cathode electrode 320 A segmented surface is formed, which will be described later. The LCD glass substrate clamp device 40 is placed on a cathode electrode protective cover 330. The LCD glass substrate clamp device 340 includes: a rectangular ring-shaped support frame 342 formed by making the rod-shaped frame at an angle to have the same size as the LCD glass substrate; and a plurality of lost clamps 345 along the support frame. It is configured to directly clamp the LCD glass substrate 305. At this time, as shown in FIG. 11, the clamp 345 includes: a cylindrical fixing rod 345a fixed to the support frame 342; a circular clamp plate 345b including a hole formed therebetween for inserting the fixing rod 345a; The spring on the fixing rod 345a is used to pressurize the sweet loss plate 3 4 5 b; and the cylindrical clip sweet cover 3 4 5 d is used to cover the spring 345c to protect the fixing rod 345a and the spring 345c from receiving electricity. Damage to pulp. Therefore, when the edge portion of the LCD glass substrate 305 placed on the cathode electrode 320 is pressurized by the D or E portion of the clamp 345 of FIG. 11, the LCD glass substrate 305 is strongly pressurized by the spring 345c to the clamp The nipper 345b is inclined by the elastic force, and the edge portion of the LCD glass substrate 305 placed on the cathode electrode 320 is strongly pressed. At this time, the LCD glass substrate 305 13 472320 with the clamp plate 345b protruding therebetween is loaded.
14 472320 五、發明說明（12) ’係由於當LCD玻璃基板夾钳裝置340之夾钳345強烈加壓 時’ LCD玻璃基板305與陰極電極保護覆蓋物33〇間形成間 隙。 更特別而言’如第12圖所示’當LCD玻璃基板夾鉗裝 置340之夾鉗345強烈加壓LCD玻璃基板305端緣部份時’ 藉由夾鈕345負載於LCD玻璃基板305之力量以垂直於夾鉗 3 4 5之傾斜表面之方向操作之。 負載於LCD玻璃基板305之力量可被分成向量中之向 里Α(νΑ)及向量β(νΒ)。當所有夾鉗345加壓LCD玻璃基板 3〇5之端緣向自端緣部份至LCD玻璃基板3〇5之中心部份之 方向，力1 ’向量A(Va)，自端緣部份自端緣部份傳送至 LCD玻璃基板3〇5之中心部份。 再者，因為LCD玻璃基板305之端緣部份係高於其中 〜部份約0.1至〇.2mm，LCD玻璃基板3〇5變成凹面形狀。 、、’。果，LCD玻璃基板3〇5之中心部份不與陰極電極32〇間隔 開，且其間無間隙形成。 一第1至4表係提供當陰極電極保護覆蓋物33〇被形成至 门於陰極電極320之上表面〇1至〇.2mm時光阻是否被燃燒 之數據。 特別而言，第1至4表係提供當電漿蝕刻方法於二陰 *电極之者之陰極電極保護覆蓋物被形成高於相對應陰 。包極0.1至0.2mm且其它陰極電極之陰極電極保護覆蓋 物破形成具有相同或較低於相對應陰極電極之條件下施行 時光阻是否燃燒之結果。14 472320 V. Description of the invention (12) ′ is because when the clamp 345 of the LCD glass substrate clamping device 340 is strongly pressurized, a gap is formed between the LCD glass substrate 305 and the cathode electrode protective cover 33. More specifically, 'as shown in FIG. 12', when the clamp 345 of the LCD glass substrate clamping device 340 strongly presses the edge portion of the LCD glass substrate 305, the force on the LCD glass substrate 305 by the clamp button 345 Operate in a direction perpendicular to the inclined surface of the clamps 3 4 5. The force carried on the LCD glass substrate 305 can be divided into a forward direction A (νΑ) in the vector and a vector β (νΒ) in the vector. When all the clamps 345 press the end edge of the LCD glass substrate 305 to the direction from the end edge portion to the center portion of the LCD glass substrate 305, the force 1 'vector A (Va), from the end edge portion From the edge part to the center part of the LCD glass substrate 305. Furthermore, because the edge portion of the LCD glass substrate 305 is approximately 0.1 to 0.2 mm higher than the ~~ portion thereof, the LCD glass substrate 305 becomes a concave shape. ,, '. As a result, the center portion of the LCD glass substrate 305 is not spaced from the cathode electrode 32 and no gap is formed therebetween. The first to fourth tables provide data on whether or not the photoresist is burned when the cathode electrode protective cover 33o is formed on the upper surface of the cathode electrode 320 by 0.1 to 0.2mm. In particular, Tables 1 to 4 provide that when the plasma etching method is used on the two negative electrodes, the cathode electrode protective cover is formed higher than the corresponding negative electrode. The cathode electrode protective covering of 0.1 to 0.2 mm and other cathode electrodes is broken to form the result of whether the photoresist burns when the same or lower than the corresponding cathode electrode is applied.
15 472320 五、發明說明（13) 第1表 腔室 陰極電極 陰極電極保護覆 蓋物 光阻 腔室B 陰極電極A 形成高於陰極電極 0.1 至 0.2mm 未被燃燒 陰極電極B 形成低於陰極電極 (習知技藝） 被燃燒 依據第1表，當電漿蝕刻方法於二陰極電極A及B與不 同之陰極電極保護覆蓋物結合之條件下施行時，陰極電極 A與形成高於陰極電極A0_1至0.2mm之陰極電極保護覆蓋 物結合；且陰極電極B與形成低於陰極電極B之陰極電極 保護覆蓋物結合，具陰極電極A之光阻不被燃燒，且具陰 極電極B之光阻被燃燒。 第2表 腔室 陰極電極 陰極電極保護覆 蓋物 光阻 腔室B 陰極電極A 形成低於陰極電 極A(習知技藝） 燃燒 陰極電極B 形成高於陰極電 極 B0.1 至 0.2mm 未被燃燒 依據第2表，當電漿蝕刻方法於二陰極電極A及B與用 於第1表測.試中之其它陰極電極保護覆蓋物結合之條件下 施行時，陰極電極A與形成低於陰極電極A之陰極電極保 護覆蓋物結合；且陰極電極B與形成高於陰極電極BO. 1至 0.2mm之陰極電極保護覆蓋物結合，具陰極電極A之光阻 被燃燒，且具陰極電極B之光阻不被燃燒。 16 472320 五、發明說明（14) 第3表 腔室 陰極電極 陰極電極保護覆 蓋物 光阻 腔室B 陰極電極A 形成高於陰極電 極 A0.1 至 0.2mm 未被燃燒 陰極電極B 形成高於陰極電 極 B0.1 至 0.2mm 未被燃燒 依據第3表，當電漿蝕刻方法於二陰極電極A及B與形 成高於陰極電極A及B0.1至0.2mm之陰極電極保護覆蓋物 結合之條件下施行時，具有陰極電極A及B之光阻不被燃 燒。 第4表 腔室 陰極電極 陰極電極保護覆 蓋物 光阻 腔室C 陰極電極A 形成高於陰極電 極 A0.1 至 0.2mm 未被燃燒 陰極電極B 形成高於陰極電 極 B0.1 至 0.2mm 未被燃燒 依據第4表，當電漿蝕刻方法於腔室C之二陰極電極A 及B與用於第3表之腔室B内之陰極電極保護覆蓋物結合之 條件下於腔室C内施行時，具有腔室C内之陰極電極A及B 之光阻不被燃燒。 此外，當46個LCD玻璃基板305於包含形成高於個別 對應陰極電極之陰極電極保護覆蓋物之腔室内以電漿蝕刻 時，如第1至4表之相同結果，即，未被燃燒之光阻，被產 生。 17 472320 五、發明說明（15) 如第3及4表，光阻未被燃燒，係因為陰極電極及LCD 玻璃基板305未被分開且藉由形成高於陰極電極0· 1至 0.2mm之陰極電極保護覆蓋物彼此接觸，結果，陰極電極 賦予完整之冷卻效率。 另一方面，如第3及4表所示結果，電漿蝕刻方法需 於陰極電極及LCD玻璃基板305彼此接觸之條件下施行， 以避免光阻被燃燒。但是，當電漿蝕刻方法於此一條件下 施行後LCD玻璃基板305以LCD玻璃基板上升裝置之上夾 栓上升時，LCD玻璃基板305不與陰極電極分開，且藉由 LCD玻璃基板305與陰極電極間之強烈靜電而彎曲。 為移除LCD玻璃基板305與陰極電極間之靜電，由RF 動力供應裝置供應至旋轉軸之RF動力之振輻被連續降低 至少1秒或更久，較佳係5秒，如此，靜電被移除。 於第9圖中，參數307係LCD基質，其上裝置形成於LCD 玻璃基板上。LCD基質307係其上形成薄膜電晶體及ITO 電極之TFT基質或其上紅（R)、綠（G)及藍（B)之濾色器及一 般電極被形成之濾色基質之任一者。 於電漿蝕刻以避免光阻被燃燒而完成後，LCD玻璃基 板305被重複接受下述處理步驟：形成半導體薄膜，塗覆 光阻膜，使光阻膜依據被形成之圖案曝露於光下，使曝露 之光阻膜顯影，及施行電漿蝕刻。經由上述處理步驟，TFT 基質之第一玻璃基板及色濾基質之第二玻璃基板被製備。 其後，第一及第二玻璃基板被排列且彼此結合。液 晶被填入二基質間之空間，以便形成數um厚度之液晶層 18 472320 五、發明說明（16) 。液晶層適於作為具有形成於TFT基質表面上之像素電極 及形成於色濾器基質表面上之一般電極之電容器之介電層 。液晶層亦作為光阻絕器，其使入射光束通過或阻絕。 為驅動TFT基質之TFT，至少二印刷電路板（PCB)被 提供之。一般，二印刷電路板之一者被寬稱為來源驅動PCB 且另一被稱為閘驅動PCB。來源PCB提供相對應於自外側 輸入之影像資料輸入之灰階電壓，且閘驅動PCB提供開或 關之電壓以開啟TFT基質之TFT。對於TFT基質與二PCB 間之訊號轉移，提供驅動積體電路之稱為帶載器包裝物之 連接元件被提供之。藉由以數個帶載體包裝物使二PCB結 合至TFT基質，液晶顯示嵌板被製得。 最後，一般被稱為後光組件之光源供應單元被配置 以使液晶顯示嵌板降低，藉此，完成LCD模組之製備。 如前所述，LCD玻璃基板之中心部份與陰極電極之相 對應部份間之間隙之形成可藉由形成用以保護陰極電極免 於使電漿高於陰極電極之陰極電極保護覆蓋物而避免之， 且藉此，藉由電漿加熱至高溫之LCD玻璃基板可藉由於相 對應低溫之陰極電極冷卻且燃燒之光阻可被降低。此降低 製備LCD嵌板時之失敗產生。 同時，雖然上述實施例顯示及描述應用於LCD嵌板製 備中之半導體層之圖案之電漿蝕刻方法，本發明之電漿蝕 刻方法可被用於半導體裝置之製備。例如，當配置其上半 導體裝置之圖案被形成於陰極電極上之晶元時，夾鉗晶元 之平區域，及施行此一電漿#刻方法以形成選擇性之圖案 19 472320 五、發明說明（]7) 具有水平同度兩於陰極電極上平面之上表面之陰極電極 保《盍物被沿著晶元外側周圍提供之。相同於前述，此 -結構使晶元與陰極電極緊密接觸，藉此，避免作為光罩 之光阻層於電漿蝕刻方法期間被燃燒。 本發明不被限於上述實施例。各種改變及改良可被 熟習此項技藝者作用之且仍係屬本發明之範圍（其係如申 請專利範圍所界定）。15 472320 V. Description of the invention (13) The first table chamber cathode electrode cathode electrode protective cover photoresistance chamber B cathode electrode A is formed 0.1 to 0.2 mm higher than the cathode electrode. Unburned cathode electrode B is formed below the cathode electrode ( (Conventional technique) Burned According to Table 1, when the plasma etching method is performed under the condition that the two cathode electrodes A and B are combined with different cathode electrode protective coverings, the cathode electrode A and the formation are higher than the cathode electrode A0_1 to 0.2. The cathode electrode protection cover of mm is combined; and the cathode electrode B is combined with the cathode electrode protection cover formed lower than the cathode electrode B, the photoresist with the cathode electrode A is not burned, and the photoresist with the cathode electrode B is burned. The second table chamber cathode electrode cathode electrode protective cover photoresistance chamber B cathode electrode A formed lower than cathode electrode A (conventional technique) combustion cathode electrode B formed higher than cathode electrode B 0.1 to 0.2 mm not burned basis Table 2. When the plasma etching method is performed under the conditions that the two cathode electrodes A and B are used in combination with the other cathode electrode protective coverings used in the test of the first table, the cathode electrode A is formed to be lower than the cathode electrode A. The cathode electrode protection cover is combined; and the cathode electrode B is combined with the cathode electrode protection cover which is higher than the cathode electrode BO. 1 to 0.2mm, the photoresist with the cathode electrode A is burned, and the photoresist with the cathode electrode B is burned. Not burned. 16 472320 V. Description of the invention (14) The third table chamber cathode electrode cathode electrode protective cover photoresistance chamber B cathode electrode A formed 0.1 to 0.2 mm higher than cathode electrode A unburned cathode electrode B formed higher than cathode The electrode B0.1 to 0.2mm is not burned. According to Table 3, when the plasma etching method is used on the two cathode electrodes A and B to form a cathode electrode protective cover that is 0.1 to 0.2mm higher than the cathode electrodes A and B. In the next implementation, the photoresist with cathode electrodes A and B will not be burned. Table 4 Cathode Electrode Cathode Electrode Protective Cover Photoresistive Chamber C Cathode A is formed 0.1 to 0.2 mm higher than cathode A unburned Cathode B is formed 0.1 to 0.2 mm higher than cathode B Combustion according to Table 4, when the plasma etching method is performed in chamber C under the condition that the cathode electrodes A and B of chamber C are combined with the cathode electrode protective covering used in chamber B of table 3. The photoresist with the cathode electrodes A and B in the chamber C is not burned. In addition, when 46 LCD glass substrates 305 are plasma-etched in a chamber containing a cathode electrode protective cover that is formed higher than the respective corresponding cathode electrode, the same results as in Tables 1 to 4, that is, unburned light Resistance, was created. 17 472320 V. Description of the invention (15) As shown in Tables 3 and 4, the photoresist is not burned because the cathode electrode and LCD glass substrate 305 are not separated and by forming a cathode 0.1 to 0.2 mm higher than the cathode electrode The electrode protective coverings are in contact with each other, and as a result, the cathode electrode imparts complete cooling efficiency. On the other hand, as shown in Tables 3 and 4, the plasma etching method needs to be performed under conditions in which the cathode electrode and the LCD glass substrate 305 are in contact with each other to prevent the photoresist from being burned. However, when the plasma etching method is performed under this condition, when the LCD glass substrate 305 is lifted by the latch on the LCD glass substrate raising device, the LCD glass substrate 305 is not separated from the cathode electrode, and the LCD glass substrate 305 and the cathode are connected by the LCD glass substrate 305 and the cathode. Strong static electricity between the electrodes bends. In order to remove the static electricity between the LCD glass substrate 305 and the cathode electrode, the vibration amplitude of the RF power supplied to the rotating shaft by the RF power supply device is continuously reduced for at least 1 second or longer, preferably 5 seconds, so that the static electricity is removed. except. In Figure 9, the parameter 307 is the LCD substrate, and the device is formed on the LCD glass substrate. The LCD substrate 307 is any of a TFT substrate on which a thin-film transistor and an ITO electrode are formed, or any one of red (R), green (G), and blue (B) color filters and a color filter substrate on which ordinary electrodes are formed. . After the plasma etching is completed to prevent the photoresist from being burned, the LCD glass substrate 305 is repeatedly subjected to the following processing steps: forming a semiconductor thin film, coating the photoresist film, and exposing the photoresist film to light according to the formed pattern. The exposed photoresist film is developed, and plasma etching is performed. Through the above processing steps, a first glass substrate of the TFT substrate and a second glass substrate of the color filter substrate are prepared. Thereafter, the first and second glass substrates are aligned and bonded to each other. Liquid crystals are filled into the space between the two substrates to form a liquid crystal layer with a thickness of several um. 18 472320 V. Description of the invention (16). The liquid crystal layer is suitable as a dielectric layer of a capacitor having a pixel electrode formed on the surface of a TFT substrate and a general electrode formed on the surface of a color filter substrate. The liquid crystal layer also functions as a light blocker, which passes or blocks the incident light beam. To drive the TFT of the TFT substrate, at least two printed circuit boards (PCBs) are provided. Generally, one of the two printed circuit boards is widely referred to as a source-driven PCB and the other is referred to as a gate-driven PCB. The source PCB provides a grayscale voltage corresponding to the image data input from the outside, and the gate drive PCB provides an on or off voltage to turn on the TFT of the TFT substrate. For the signal transfer between the TFT substrate and the two PCBs, a connection element called a carrier package that provides a drive integrated circuit is provided. By bonding the two PCBs to the TFT substrate with several carrier packages, a liquid crystal display panel is prepared. Finally, a light source supply unit commonly referred to as a back light module is configured to lower the liquid crystal display panel, thereby completing the preparation of the LCD module. As mentioned above, the formation of the gap between the central portion of the LCD glass substrate and the corresponding portion of the cathode electrode can be achieved by forming a cathode electrode protective cover to protect the cathode electrode from the plasma being higher than the cathode electrode. Avoiding this, and thereby, the LCD glass substrate heated to a high temperature by the plasma can be cooled and the photoresistance of the combustion can be reduced by the cathode electrode corresponding to the low temperature. This reduces the failure in preparing the LCD panel. Meanwhile, although the above embodiments show and describe a plasma etching method of a pattern of a semiconductor layer applied in the preparation of an LCD panel, the plasma etching method of the present invention can be used for the preparation of a semiconductor device. For example, when a wafer on which a pattern of a semiconductor device is arranged is formed on a cathode electrode, a flat region of the wafer is clamped, and a plasma #etching method is performed to form a selective pattern 19 472320 V. Description of the Invention (] 7) A cathode electrode with a horizontal uniformity on the upper surface of the upper surface of the cathode electrode is provided along the periphery of the wafer. As before, this -structure brings the wafer into close contact with the cathode electrode, thereby avoiding the photoresist layer as a photomask from being burned during the plasma etching method. The invention is not limited to the embodiments described above. Various changes and improvements can be made by those skilled in the art and still fall within the scope of the present invention (as defined by the scope of the patent application).
20 472320 五、發明說明（18) 元件標號對照 1…閘極 180...RF產生器 2…SiNx絕緣層 200...電漿腔室 3...半導體層 300...陰極 4...歐姆接觸層 3 01…夾甜螺絲 7...保護層 3 0 2…炎甜螺絲 8...接觸洞 305...LCD玻璃基板 9...透明電極 310…絕緣體 10··. TFT 基質 312...旋轉軸 10 a...端緣 314...凹槽 30...傳統之電將蝕刻裝置 320...陰極電極 32...絕緣層 322…上升桿結合孔洞 34...夾子 324...上升栓合孔洞 34a...支樓框 326...端緣部份 34b...夾子 3 30...陰極電極保護覆蓋物 34c…上升桿 3 3 2…孔 35a...燃燒光阻 340...夾鉗裝置 36...板狀陰極電極 342...矩形環狀支撐框 37...陰極加壓元件 3 4 5…炎甜 37a...張力彈簧 345a...圓柱形固定桿 38...保護覆蓋物 345b...圓形夾钳板 150...陰極旋轉裝置 345c·.·彈簧 16 0...電漿來源氣體供應裝置 345d...圓柱形夾鉗覆蓋物 21 472320 五、發明說明（19) 346...上升桿結合孔 358…張力彈簧 3 4 8...爽钮結合孔 369...夾鉗桿驅動裝置 349...夾鉗桿 3 6 9 a...旋轉桿 350...LCD玻璃基板上升 369b...驅動單元 裝置 369c...炎鉗桿指狀物 352...上升桿 400...陽極 3 52a...底部 450...排氣裝置 354.. .上升栓支撐板 356.. .上升栓 500...電漿蝕刻裝置 2220 472320 V. Description of the invention (18) Component number comparison 1 ... gate 180 ... RF generator 2 ... SiNx insulation layer 200 ... plasma chamber 3 ... semiconductor layer 300 ... cathode 4 .. .Ohm contact layer 3 01 ... sweet screw 7 ... protective layer 3 0 2 ... sweet screw 8 ... contact hole 305 ... LCD glass substrate 9 ... transparent electrode 310 ... insulator 10 ... TFT Substrate 312 ... rotation axis 10a ... end edge 314 ... groove 30 ... conventional electric etching device 320 ... cathode electrode 32 ... insulation layer 322 ... rising rod combined with hole 34. ..Clip 324 ... rising bolt hole 34a ... branch frame 326 ... end edge portion 34b ... clip 3 30 ... cathode electrode protective cover 34c ... rising rod 3 3 2 ... hole 35a ... burning photoresist 340 ... clamping device 36 ... plate cathode electrode 342 ... rectangular ring-shaped support frame 37 ... cathode pressurizing element 3 4 5 ... sweet 37a ... tension Spring 345a ... Cylinder fixing rod 38 ... Protective cover 345b ... Circular clamp plate 150 ... Cathode rotation device 345c ... Spring 16 0 ... Plasma source gas supply device 345d. ..Cylinder clamp cover 21 472320 V. Description of the invention (19) 346 ... Combining hole 358 ... Tension spring 3 4 8 ... Smooth button combining hole 369 ... Clamp lever driving device 349 ... Clamp lever 3 6 9 a ... Rotating lever 350 ... LCD glass substrate up 369b ... Drive unit device 369c ... Flame clamp lever finger 352 ... Rising rod 400 ... Anode 3 52a ... Bottom 450 ... Exhaust device 354 ... Rising bolt support plate 356. .. rising bolt 500 ... plasma etching device 22