JPH10133229A - Method and device for manufacturing liquid crystal panel - Google Patents

Method and device for manufacturing liquid crystal panel

Info

Publication number
JPH10133229A
JPH10133229A JP28686696A JP28686696A JPH10133229A JP H10133229 A JPH10133229 A JP H10133229A JP 28686696 A JP28686696 A JP 28686696A JP 28686696 A JP28686696 A JP 28686696A JP H10133229 A JPH10133229 A JP H10133229A
Authority
JP
Japan
Prior art keywords
glass substrate
tft
liquid crystal
transfer tool
crystal panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28686696A
Other languages
Japanese (ja)
Inventor
Hideomi Nagase
秀臣 長瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP28686696A priority Critical patent/JPH10133229A/en
Publication of JPH10133229A publication Critical patent/JPH10133229A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To prevent electrification and electrostatic destruction in a TFT (thin film transistor) in a production process of a liquid crystal panel. SOLUTION: A support part 7 of a transfer tool 6 supporting a glass substrate 2 with a TFT is made a conductive member, and the support part 7 consisting of this conductive member is grounded through the conductive transfer tool 6. When the glass substrate 3 with the TFT is transferred while from an instant when the transfer tool 6 rises, and lifts the glass substrate 3 with the TFT up to the end of the transferring, the support part 7 is in contact with the edge of the glass substrate 3 with the TFT, and static electricity caused by peeling the glass substrate 3 with the TFT from a plate 1 is set free to the ground through the conductive support member 7 and the transfer tool 6, and the electrification and electrostatic destruction in the TFT formed on the glass substrate 3 with the TFT are prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、スイッチング素
子として薄膜トランジスタ(以下「TFT」という)を
用いた液晶パネルの製造方法および製造装置に関するも
のである。
[0001] 1. Field of the Invention [0002] The present invention relates to a method and an apparatus for manufacturing a liquid crystal panel using thin film transistors (hereinafter referred to as “TFTs”) as switching elements.

【0002】[0002]

【従来の技術】近年、液晶パネル、特に、TFTをスイ
ッチング素子として液晶を駆動するアクティブマトリク
ス型の液晶パネルの発展が目ざましく、液晶パネルとし
ての製造歩留りの向上を図るべく、液晶パネルの製造装
置の改善がなされている。ここで、特に、液晶パネルの
製造歩留りの悪化要因として、製造工程中の静電気の発
生およびそれによるTFT破壊の問題がクローズアップ
されている。
2. Description of the Related Art In recent years, a liquid crystal panel, particularly an active matrix type liquid crystal panel which drives a liquid crystal by using a TFT as a switching element, has been remarkably developed, and a liquid crystal panel manufacturing apparatus has been developed in order to improve the production yield as a liquid crystal panel. Improvements have been made. Here, in particular, as a factor of deteriorating the production yield of the liquid crystal panel, the problem of generation of static electricity in the production process and TFT destruction due to the generation of static electricity have been highlighted.

【0003】図2(a)は従来の液晶パネルの製造装置
の平面図、図2(b),(c)はその動作(搬送)の過
程を示す側面図である。図2において、1はプレート、
2は搬送ツール、3はガラス基板上に少なくともTFT
を形成した状態のTFT付ガラス基板、4は搬送ツール
2に設けられ搬送時にTFT付ガラス基板3を支持する
絶縁体からなる支持部、5はTFT付ガラス基板3のプ
レート1に載置される位置を規正する位置規正ピンであ
る。
FIG. 2A is a plan view of a conventional liquid crystal panel manufacturing apparatus, and FIGS. 2B and 2C are side views showing the operation (conveyance) process. In FIG. 2, 1 is a plate,
2 is a transfer tool, 3 is a TFT on a glass substrate
The glass substrate 4 with TFT in a state in which is formed is a supporting portion made of an insulator which is provided on the transfer tool 2 and supports the glass substrate 3 with TFT at the time of transfer, and the reference numeral 5 is placed on the plate 1 of the glass substrate 3 with TFT. This is a position setting pin for setting the position.

【0004】この従来の液晶パネルの製造装置は、TF
T付ガラス基板3が位置規正ピン5により位置の規正が
なされて真空吸着式のプレート1上に載置・吸着された
状態から、図2(b)のように搬送ツール2が上昇し、
搬送ツール2の接触部4でTFT付ガラス基板3が持ち
上げられた後、図2(c)のように次の工程部へ搬送さ
れる。
[0004] This conventional liquid crystal panel manufacturing apparatus uses a TF.
From the state where the position of the glass substrate 3 with T is adjusted by the position adjusting pins 5 and is mounted and sucked on the vacuum suction type plate 1, the transfer tool 2 ascends as shown in FIG.
After the glass substrate with TFT 3 is lifted by the contact portion 4 of the transfer tool 2, it is transferred to the next process section as shown in FIG. 2C.

【0005】この製造装置では、搬送ツール2が上昇し
TFT付ガラス基板3が持ち上げられる際に、プレート
1からのTFT付ガラス基板3の剥離により必然的に静
電気が発生し、この静電気が放電して、TFT付ガラス
基板3のTFTに過大な電流が瞬間的に流れて、TFT
が静電破壊してしまう。この静電破壊の対応策として、
工程の温度管理および湿度管理を徹底したり、周辺に設
置したイオンブローによる除電を行っていた。
In this manufacturing apparatus, when the transfer tool 2 is lifted and the glass substrate 3 with TFT is lifted, static electricity is inevitably generated due to peeling of the glass substrate 3 with TFT from the plate 1, and this static electricity is discharged. As a result, an excessive current instantaneously flows through the TFT of the glass substrate 3 with the TFT,
Will be electrostatically damaged. As a countermeasure against this electrostatic destruction,
Thorough control of temperature and humidity in the process was performed, and static electricity was removed by ion blow installed in the vicinity.

【0006】[0006]

【発明が解決しようとする課題】しかしながら上記従来
の静電破壊の対応策では、比較的少ない静電気に対して
効果は得られるが、静電破壊を生じるほどの静電気に対
しては十分な効果が得られなかった。また、製造装置に
よっては、イオンブローを設置できないような装置もあ
った。
However, the above-mentioned conventional countermeasures against electrostatic breakdown can provide an effect on relatively small static electricity, but have a sufficient effect on static electricity enough to cause electrostatic breakdown. Could not be obtained. In addition, depending on the manufacturing apparatus, there is an apparatus in which an ion blow cannot be installed.

【0007】この発明の目的は、製造工程におけるTF
Tの帯電および静電破壊を防止することができる液晶パ
ネルの製造方法および製造装置を提供することである。
An object of the present invention is to provide a TF in a manufacturing process.
An object of the present invention is to provide a method and an apparatus for manufacturing a liquid crystal panel capable of preventing charging and electrostatic breakdown of T.

【0008】[0008]

【課題を解決するための手段】この発明の液晶パネルの
製造方法は、少なくともTFTを形成したガラス基板を
保持したプレート上からガラス基板を搬送ツールにより
持ち上げて移送する液晶パネルの製造方法であって、搬
送ツールによりガラス基板を少なくとも持ち上げるとき
に、接地した導電性部材をガラス基板の端に接触させる
ことを特徴とする。
A method of manufacturing a liquid crystal panel according to the present invention is a method of manufacturing a liquid crystal panel in which at least a glass substrate is lifted up from a plate holding a glass substrate on which a TFT is formed by a transfer tool and transferred. The grounding conductive member is brought into contact with the edge of the glass substrate when the glass substrate is lifted at least by the transfer tool.

【0009】この製造方法によれば、搬送ツールにより
プレート上からガラス基板を少なくとも持ち上げるとき
に、接地した導電性部材をガラス基板の端に接触させる
ことにより、ガラス基板の搬送時に、プレートからガラ
ス基板を剥離する際に発生してガラス基板に帯電する静
電気を、導電性部材から地面に逃がすことができ、ガラ
ス基板に形成したTFTの帯電および静電破壊を防止す
ることができる。
According to this manufacturing method, when at least the glass substrate is lifted from above the plate by the transfer tool, the grounded conductive member is brought into contact with the edge of the glass substrate so that the glass substrate is transferred from the plate during the transfer of the glass substrate. Static electricity generated when the substrate is peeled off and charged on the glass substrate can be released from the conductive member to the ground, and the charging and electrostatic breakdown of the TFT formed on the glass substrate can be prevented.

【0010】この発明の液晶パネルの製造装置は、少な
くともTFTを形成したガラス基板を保持するプレート
と、ガラス基板の端を支持しプレート上からガラス基板
を持ち上げて移送する搬送ツールとを備えた液晶パネル
の製造装置であって、搬送ツールのガラス基板を支持す
る部分を導電性部材にするとともに、この導電性部材を
接地したことを特徴とする。
An apparatus for manufacturing a liquid crystal panel according to the present invention includes a liquid crystal having at least a plate for holding a glass substrate on which a TFT is formed, and a transfer tool for supporting an end of the glass substrate and lifting and transferring the glass substrate from above the plate. A panel manufacturing apparatus, wherein a portion of a transfer tool supporting a glass substrate is formed of a conductive member, and the conductive member is grounded.

【0011】この構成によれば、搬送ツールのガラス基
板の端を支持する部分を導電性部材にするとともに、こ
の導電性部材を接地したことにより、ガラス基板の搬送
時に、プレートからガラス基板を剥離する際に発生して
ガラス基板に帯電する静電気を、導電性部材から地面に
逃がすことができ、ガラス基板に形成したTFTの帯電
および静電破壊を防止することができる。
According to this structure, the portion of the transfer tool that supports the end of the glass substrate is made of a conductive member, and the conductive member is grounded, so that the glass substrate is peeled off from the plate when the glass substrate is transferred. The static electricity generated on the glass substrate during the operation can be released from the conductive member to the ground, and the TFT formed on the glass substrate can be prevented from being charged and electrostatically damaged.

【0012】[0012]

【発明の実施の形態】以下、この発明の実施の形態につ
いて図面を参照しながら説明する。図1(a)はこの発
明の実施の形態の液晶パネルの製造装置の平面図、図1
(b)はその動作(搬送)の過程を示す側面図である。
図1において、1は真空吸着式のプレート、3はガラス
基板上に少なくともTFTを形成した状態のTFT付ガ
ラス基板、5はTFT付ガラス基板3のプレート1に載
置される位置を規正する位置規正ピン、6はレール状で
TFT付ガラス基板3を4枚一度に搬送できる導電性の
搬送ツール、7は搬送ツール6に設けられ搬送時にTF
T付ガラス基板3を支持する導電性部材からなる支持部
である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1A is a plan view of an apparatus for manufacturing a liquid crystal panel according to an embodiment of the present invention.
(B) is a side view showing a process of the operation (conveyance).
In FIG. 1, reference numeral 1 denotes a vacuum suction type plate, 3 denotes a glass substrate with a TFT in which at least a TFT is formed on a glass substrate, and 5 denotes a position for defining a position of the glass substrate with a TFT 3 placed on the plate 1. The setting pin 6 is a rail-shaped conductive transfer tool that can transfer four glass substrates 3 with TFTs at a time.
It is a support portion made of a conductive member that supports the glass substrate 3 with T.

【0013】図1の液晶パネルの製造装置は、配向膜仮
硬化炉であり、内部にイオンブローを設置できず、真空
吸着式のプレート1を4個有しており、静電気対策を施
さない場合にはTFT付ガラス基板3上に非常に大きな
静電気が発生する。そこで、この実施の形態では、静電
気対策として、TFT付ガラス基板3の端を支持する搬
送ツール6の支持部7を導電性部材にし、かつこの導電
性部材からなる支持部7を導電性の搬送ツール6を介し
て接地している。なお、搬送ツール6を接地するために
は、接地線として可撓性のものを用いたり、例えば接地
板に搬送ツール6が摺動するような構成とすればよい。
The apparatus for manufacturing a liquid crystal panel shown in FIG. 1 is a pre-curing furnace for an alignment film, in which no ion blow can be installed, four vacuum suction type plates 1 are provided, and no countermeasures against static electricity are taken. , Very large static electricity is generated on the glass substrate 3 with TFT. Therefore, in this embodiment, as a countermeasure against static electricity, the support 7 of the transfer tool 6 that supports the end of the glass substrate 3 with a TFT is made to be a conductive member, and the support 7 made of this conductive member is made to be conductive. It is grounded via the tool 6. In order to ground the transfer tool 6, a flexible ground wire may be used, or the transfer tool 6 may slide on a ground plate, for example.

【0014】この実施の形態によれば、TFT付ガラス
基板3の搬送時、搬送ツール6が上昇しTFT付ガラス
基板3を持ち上げた瞬間から搬送の終了までの間(すな
わち、支持部7がTFT付ガラス基板3と接触している
間)、プレート1からTFT付ガラス基板3を剥離する
ことにより発生するTFT付ガラス基板3上の静電気
を、導電性の支持部7および搬送ツール6を介して地面
に逃がすことができ、TFT付ガラス基板3に形成され
ているTFTの帯電および静電破壊を防止することがで
きる。
According to this embodiment, during the transfer of the glass substrate 3 with the TFT, from the moment when the transfer tool 6 rises and lifts the glass substrate 3 with the TFT until the end of the transfer (that is, the support portion 7 is (While it is in contact with the glass substrate 3), the static electricity on the glass substrate 3 with TFT generated by peeling the glass substrate 3 with TFT from the plate 1 is transferred via the conductive support 7 and the transfer tool 6. The TFT can be released to the ground, and the TFT formed on the glass substrate with TFT 3 can be prevented from being charged and electrostatically damaged.

【0015】なお、帯電したTFT付ガラス基板3が、
接地された支持部7に接触しているために、TFTに過
大な電流が流れる可能性があるが、支持部7に接触して
いる部分は絶縁物のガラス基板であり、しかもTFTか
ら離れたガラス基板の端で接触しているため、TFTに
急激な電流は流れず、TFTに損傷を与えることはな
い。
The charged glass substrate 3 with TFT is
Excessive current may flow through the TFT because it is in contact with the grounded support portion 7, but the portion that is in contact with the support portion 7 is an insulating glass substrate and is further away from the TFT. Since the TFTs are in contact at the edge of the glass substrate, no abrupt current flows through the TFT, and the TFT is not damaged.

【0016】なお、上記実施の形態では、TFT付ガラ
ス基板3と接触し導電性部材からなる支持部7の接地
を、導電性の搬送ツール6を介して行ったが、これに限
らず、支持部7が接地されてあれば同様の効果が得られ
ることは言うまでもない。さらに、支持部7を接地する
構成でなくても、プレート1上からTFT付ガラス基板
3を少なくとも持ち上げるときに、支持部7以外の接地
した導電性部材をTFT付ガラス基板3のガラス基板端
に接触させるようにすることにより、同様の効果を得る
ことができる。
In the above-described embodiment, the grounding of the support portion 7 made of a conductive material in contact with the glass substrate 3 with the TFT is performed via the conductive transfer tool 6, but the present invention is not limited to this. Needless to say, the same effect can be obtained if the unit 7 is grounded. Further, even if the supporting portion 7 is not grounded, at least when the glass substrate 3 with TFT is lifted from the plate 1, a grounded conductive member other than the supporting portion 7 is attached to the glass substrate end of the glass substrate 3 with TFT. The same effect can be obtained by contacting.

【0017】[0017]

【発明の効果】この発明の液晶パネルの製造方法は、搬
送ツールによりプレート上からガラス基板を少なくとも
持ち上げるときに、接地した導電性部材をガラス基板の
端に接触させることにより、ガラス基板の搬送時に、プ
レートからガラス基板を剥離する際に発生してガラス基
板に帯電する静電気を、導電性部材から地面に逃がすこ
とができ、ガラス基板に形成したTFTの帯電および静
電破壊を防止することができる。
According to the liquid crystal panel manufacturing method of the present invention, the grounding conductive member is brought into contact with the edge of the glass substrate when the glass substrate is lifted at least from the plate by the transfer tool, so that the glass substrate can be transferred during the transfer. The static electricity generated when the glass substrate is peeled off from the plate and charged on the glass substrate can be released from the conductive member to the ground, and the charging and electrostatic breakdown of the TFT formed on the glass substrate can be prevented. .

【0018】この発明の液晶パネルの製造装置は、搬送
ツールのガラス基板の端を支持する部分を導電性部材に
するとともに、この導電性部材を接地したことにより、
ガラス基板の搬送時に、プレートからガラス基板を剥離
する際に発生してガラス基板に帯電する静電気を、導電
性部材から地面に逃がすことができ、ガラス基板に形成
したTFTの帯電および静電破壊を防止することができ
る。
According to the liquid crystal panel manufacturing apparatus of the present invention, the portion of the transfer tool supporting the end of the glass substrate is formed of a conductive member, and the conductive member is grounded.
When the glass substrate is transported, the static electricity generated when the glass substrate is peeled off from the plate and charged on the glass substrate can be released from the conductive member to the ground, and the charging and electrostatic breakdown of the TFT formed on the glass substrate can be prevented. Can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)はこの発明の実施の形態の液晶パネルの
製造装置の平面図、(b)はその動作(搬送)の過程を
示す側面図である。
FIG. 1A is a plan view of an apparatus for manufacturing a liquid crystal panel according to an embodiment of the present invention, and FIG. 1B is a side view showing the operation (transportation) process.

【図2】(a)は従来の液晶パネルの製造装置の平面
図、(b),(c)はその動作(搬送)の過程を示す側
面図である。
FIG. 2A is a plan view of a conventional liquid crystal panel manufacturing apparatus, and FIGS. 2B and 2C are side views showing a process of the operation (conveyance).

【符号の説明】[Explanation of symbols]

1 プレート 3 TFT付ガラス基板 5 位置規正ピン 6 導電性の搬送ツール 7 支持部(導電性部材) DESCRIPTION OF SYMBOLS 1 Plate 3 Glass substrate with TFT 5 Positioning pin 6 Conductive transfer tool 7 Support part (conductive member)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも薄膜トランジスタを形成した
ガラス基板を保持したプレート上から前記ガラス基板を
搬送ツールにより持ち上げて移送する液晶パネルの製造
方法であって、 前記搬送ツールにより前記ガラス基板を少なくとも持ち
上げるときに、接地した導電性部材を前記ガラス基板の
端に接触させることを特徴とする液晶パネルの製造方
法。
1. A method of manufacturing a liquid crystal panel in which a glass substrate on which at least a thin film transistor is formed is held and lifted by a transfer tool to transfer the glass substrate from above a plate holding the glass substrate, wherein at least the glass substrate is lifted by the transfer tool. A method for manufacturing a liquid crystal panel, comprising: contacting a grounded conductive member with an end of the glass substrate.
【請求項2】 少なくとも薄膜トランジスタを形成した
ガラス基板を保持するプレートと、前記ガラス基板の端
を支持し前記プレート上から前記ガラス基板を持ち上げ
て移送する搬送ツールとを備えた液晶パネルの製造装置
であって、 前記搬送ツールの前記ガラス基板を支持する部分を導電
性部材にするとともに、この導電性部材を接地したこと
を特徴とする液晶パネルの製造装置。
2. A liquid crystal panel manufacturing apparatus comprising: a plate for holding at least a glass substrate on which a thin film transistor is formed; and a transfer tool for supporting an end of the glass substrate and lifting and transferring the glass substrate from above the plate. An apparatus for manufacturing a liquid crystal panel, wherein a portion of the transfer tool that supports the glass substrate is a conductive member, and the conductive member is grounded.
JP28686696A 1996-10-29 1996-10-29 Method and device for manufacturing liquid crystal panel Pending JPH10133229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28686696A JPH10133229A (en) 1996-10-29 1996-10-29 Method and device for manufacturing liquid crystal panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28686696A JPH10133229A (en) 1996-10-29 1996-10-29 Method and device for manufacturing liquid crystal panel

Publications (1)

Publication Number Publication Date
JPH10133229A true JPH10133229A (en) 1998-05-22

Family

ID=17710032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28686696A Pending JPH10133229A (en) 1996-10-29 1996-10-29 Method and device for manufacturing liquid crystal panel

Country Status (1)

Country Link
JP (1) JPH10133229A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100452943C (en) * 2005-03-30 2009-01-14 精工爱普生株式会社 Electronic device substrate, electronic device, method of manufacturing electronic device
US7608304B2 (en) 2005-03-08 2009-10-27 Seiko Epson Corporation Substrate carrying method and substrate carrying apparatus
JP2013040365A (en) * 2011-08-12 2013-02-28 Sharp Corp Sputtering device and film formation method for the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7608304B2 (en) 2005-03-08 2009-10-27 Seiko Epson Corporation Substrate carrying method and substrate carrying apparatus
CN100452943C (en) * 2005-03-30 2009-01-14 精工爱普生株式会社 Electronic device substrate, electronic device, method of manufacturing electronic device
US7677941B2 (en) 2005-03-30 2010-03-16 Seiko Epson Corporation Electronic device substrate, electronic device, method of manufacturing electronic device, and electronic apparatus
JP2013040365A (en) * 2011-08-12 2013-02-28 Sharp Corp Sputtering device and film formation method for the same

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