JP3333458B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method of manufacturing a semiconductor device including a step of forming a wiring pattern on a semiconductor substrate by a plating method.

[0002]

2. Description of the Related Art Conventionally, as a technique for forming a wiring pattern on an integrated circuit on a semiconductor substrate, a technique using a plating method is known.

FIG. 6 is a sectional view schematically showing an example of a conventional wiring process.

As shown in FIG. 1A, in a conventional wiring process, first, a current film 602 is formed on a surface to be plated of a semiconductor substrate 601 by vapor deposition or the like.

Next, a mask pattern 60 is formed on the current film 602 by using a photolithography process or the like.
Form 3

Subsequently, as shown in FIG. 1B, the semiconductor substrate 601 is fixed with the surface to be plated facing downward, and the electrode pins 604 are protruded from the mask pattern 603. At this time, the electrode pins 604 are
3 and comes into contact with the current film 602.

While supplying current to the current film 602 using the electrode pins 604, the semiconductor substrate 60
The plating solution is blown up from underneath. Thus, the exposed surface of the current film 602 can be plated to form a wiring pattern (not shown).

[0008]

However, the conventional manufacturing method as shown in FIG. 6 has the following disadvantages.

When the electrode pins 604 are arranged on the surface of the semiconductor substrate 601 to be plated, a normal plating layer cannot be formed around the electrode pins 601. For this reason, the conventional manufacturing method has a drawback that the wiring pattern formed in the vicinity of the electrode pin 604 is likely to have a defect.

In order to ensure electrical contact between the current film 602 and the electrode pins 604, it is desirable that the electrode pins 604 be brought into contact with the current film 602 with a sufficient pressing force. However, in the conventional manufacturing method, since the plating solution is sprayed on the semiconductor substrate 601 from the same direction as the pressing direction of the electrode pins 604, the electrode pins 60
The pressing force of the electrode pin 6 is likely to be insufficient.
There is a disadvantage that poor contact easily occurs between the current film 602 and the current film 602.

Conversely, depending on the material of the semiconductor substrate 601, if the pressing force is too large, the semiconductor substrate 601 may be broken. In such a case, too, the pressing force is insufficient, and poor contact is likely to occur between the electrode pin 604 and the current film 602.

Further, in order to secure electrical contact between the current film 602 and the electrode pins 604, both
It is desirable that the contact surface of 2,604 is wide. However, in the conventional manufacturing method, the mask pattern is pierced by the electrode pins 604 to make contact with the current film. Therefore, it is necessary to sharpen the tips of the electrode pins 604. For this reason, the conventional manufacturing method also has a disadvantage that a contact surface between the current film 602 and the electrode pins 604 cannot be sufficiently secured, and thus poor contact is likely to occur.

Here, as a method of preventing a contact failure between the current film 602 and the electrode pins 604, a method of increasing the number of the electrode pins 604 can be considered. However, as described above, the formation of a wiring pattern is likely to occur in the vicinity of the electrode pin 604.
It is difficult to increase the number.

All of the above-mentioned disadvantages cause the yield and reliability of the semiconductor device to be reduced. For this reason, there has been a demand for a method of manufacturing a semiconductor device which can reduce formation failure of a wiring pattern and contact failure between a current film and an electrode pin.

[0015]

(1) The first invention relates to a method of manufacturing a semiconductor device including a step of forming a wiring pattern on a semiconductor substrate by a plating method. Then, a film forming step of forming a current film on the plating surface and the end surface of the semiconductor substrate, a mask forming step of forming a mask pattern on the current film of the plating surface of the semiconductor substrate, and an end surface of the orientation flat of the semiconductor substrate are formed. A supporting step of supporting a semiconductor substrate by a pressing plate that presses and a rod-shaped electrode that presses an end surface at a position facing the pressing plate, and plating in a state in which current is supplied to the current film using the rod-shaped electrode. And a plating step of forming a wiring pattern by a method.
According to the first aspect, the semiconductor substrate can be supported by the pressing plate that presses the end surface of the orientation flat and the rod-shaped electrode that presses the end surface at a position facing the pressing plate. Therefore, the pressing force acting between the end face of the semiconductor substrate and the rod-shaped electrode can be stabilized, and poor contact hardly occurs. In addition, since the rod-shaped electrode is used to support the semiconductor substrate, the flow of the plating solution is not easily separated in the vicinity of the contact surface between the rod-shaped electrode and the outer edge of the semiconductor substrate. For this reason, high quality plating can be performed. (2) The second invention relates to a method of manufacturing a semiconductor device including a step of applying a wiring pattern on a semiconductor substrate by a plating method. Then, a film forming step of forming a current film on the surface to be plated and the end surface of the semiconductor substrate, a mask forming step of forming a mask pattern on the current film of the surface to be plated of the semiconductor substrate, The method includes a supporting step of supporting the semiconductor substrate by pressing the end face, and a plating step of forming a wiring pattern by a plating method while supplying current to the current film using the rod-shaped electrodes.
According to the second aspect, the semiconductor substrate can be supported by pressing the end surface of the semiconductor substrate with the plurality of rod-shaped electrodes. Therefore, since the semiconductor substrate is supported by the plurality of rod-shaped electrodes, contact failure is unlikely to occur, and the current supply to the semiconductor substrate can be made uniform. in addition,
Since the rod-shaped electrodes are used to support the semiconductor substrate, the flow of the plating solution is not easily separated at the outer edge of the semiconductor substrate.
For this reason, a high quality plating process with less unevenness can be performed. (3) The third invention relates to a method for manufacturing a semiconductor device including a step of applying a wiring pattern on a semiconductor substrate by a plating method. Then, a film forming step of forming a current film on the plating surface and the end surface of the semiconductor substrate, a mask forming step of forming a mask pattern on the current film of the plating surface of the semiconductor substrate, With a plurality of rod-shaped electrodes provided so as not to protrude, by pressing the end face of the semiconductor substrate, a supporting step of supporting the semiconductor substrate, and in a state where current is supplied to the current film using the rod-shaped electrodes, A plating step of forming a wiring pattern by a plating method. According to the third aspect, the semiconductor substrate can be supported by pressing the end surface of the semiconductor substrate with the plurality of rod-shaped electrodes provided so as not to protrude toward the surface to be plated of the semiconductor substrate. Therefore, since the semiconductor substrate is supported by the plurality of rod-shaped electrodes, contact failure is unlikely to occur, and the current supply to the semiconductor substrate can be made uniform. In addition, since the rod-shaped electrodes are arranged so as not to protrude toward the surface to be plated of the semiconductor substrate, the flow of the plating solution is not separated at the outer edge of the semiconductor substrate. Therefore, high-quality plating with less unevenness can be performed. (4) A fourth invention relates to a method of manufacturing a semiconductor device including a step of applying a wiring pattern on a semiconductor substrate by a plating method. Then, a film forming step of forming a current film on the plated surface and the end surface of the semiconductor substrate, a mask forming step of forming a mask pattern on the current film of the plated surface of the semiconductor substrate, With a plurality of rod-shaped electrodes that are inclined away from each other, by pressing the end face of the semiconductor substrate, a supporting step of supporting the semiconductor substrate, and in a state where current is supplied to the current film using the rod-shaped electrodes, A plating step of forming a wiring pattern by a plating method. According to the fourth aspect, the semiconductor substrate can be supported by pressing the end surface of the semiconductor substrate with the plurality of rod-shaped electrodes that are inclined so as to move away from the surface to be plated of the semiconductor substrate. Therefore, since the semiconductor substrate is supported by the plurality of rod-shaped electrodes, poor contact is unlikely to occur, and the supply of current to the semiconductor substrate can be made uniform. In addition, since the rod-shaped electrode is inclined so as to move away from the surface to be plated of the semiconductor substrate, the flow of the plating solution is not separated at the outer edge of the semiconductor substrate. Therefore, high-quality plating with less unevenness can be performed.

[0016]

[0017]

[0018]

Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the size, shape, and arrangement of each component are only schematically shown to an extent that the present invention can be understood, and numerical conditions described below are merely examples. Please understand that.

First Embodiment A method for manufacturing a semiconductor device according to a first embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 and FIG. 2 are schematic diagrams for explaining a wiring step according to the manufacturing method of this embodiment. In FIG. 2B, the current film 102 is omitted.

First, the current film 1 is placed on the surface to be plated and the end surface of the semiconductor substrate 101 as follows.
02 (see FIG. 1).

First, one or more semiconductor substrates 101
Is held on the lower surface of the holding jig 103 for vapor deposition. At this time, the surface of the semiconductor substrate 101 to be plated faces downward.

Next, the deposition source 104 is disposed below the holding jig 103. At this time, for example, the evaporation source 1
The current film 102 can be easily formed on the end surface of the semiconductor substrate 101 by disposing the substrate 04 at a position shifted by a predetermined distance from directly below the semiconductor substrate 101 instead of directly below the semiconductor substrate 101.

Then, using this deposition source 104,
By evaporating a desired conductive material, the current film 1 is applied to the surface to be plated and the end surface of the semiconductor substrate 101.
02 is formed. Note that the material for forming the current film 104 is not particularly limited, and the same material as in the related art can be used.

Next, a photoresist is applied to the surface of the semiconductor substrate 101 to be plated. Then, a mask pattern 201 is formed on the current film 102 by using a normal photolithography process or the like.

Subsequently, a wiring pattern is formed on the surface to be plated of the semiconductor substrate 101 as follows (see FIG. 2).

First, the semiconductor substrate 101 is held by using the holding plate 202 and the electrode 203. Also at this time, the surface to be plated of the semiconductor substrate 101 faces downward. FIG.
As shown in (B), the pressing plate 202 is brought into contact with the orientation flat of the semiconductor substrate 101, and the electrode 203 is pressed from the end face facing the orientation flat, thereby easily holding the semiconductor substrate 101. Can be.

Then, a plating solution is blown up from below the semiconductor substrate 101 while supplying current from the electrode 203 to the current film 102. As a result, the exposed surface of the current film 102, that is, the surface on which the mask pattern 201 is not formed, is plated to form a wiring pattern. The plating solution is not particularly limited, and the same plating solution as in the prior art can be used.

Thereafter, the wiring process is completed by removing the mask pattern, unnecessary current film 102, and the like.

As described above, in this embodiment, the current is supplied to the semiconductor substrate 101 by bringing the electrode 203 into contact with the end face of the semiconductor substrate 101.

Therefore, since it is not necessary to protrude the electrode on the surface of the semiconductor substrate 101 to be plated (see FIG. 6B), there is no possibility that a defective wiring pattern is formed due to the electrode.

Since the pressing direction of the electrode 203 is perpendicular to the direction in which the plating solution is sprayed, it is easy to obtain a sufficient pressing force.
Poor contact with 2 is unlikely to occur.

In addition, since the pressing is performed from the end face of the semiconductor substrate 101, the possibility of breaking the semiconductor substrate 101 is small, and therefore, the pressing force is easily increased.

Further, the current film 102 and the electrode 2
It is easy to widen the contact surface with No. 03, and in this regard, poor contact is unlikely to occur.

For this reason, according to this embodiment, the yield and reliability of the semiconductor device can be improved.

In FIG. 2, the number of electrodes is one.
It goes without saying that there may be more than books. In the case where a plurality of electrodes are used, if one of the electrodes is normally conductive, the formation failure of the wiring pattern due to the conduction failure does not occur, so that the yield and reliability of the semiconductor device can be further improved. .

Second Embodiment A method of manufacturing a semiconductor device according to a second embodiment of the present invention will be described below with reference to FIGS.

FIG. 3 is a schematic diagram for explaining a wiring step according to the manufacturing method of this embodiment. Note that FIG.
In (B), the current film 102 is omitted.

First, in the same manner as in the first embodiment, the surface to be plated and the end surface of the semiconductor substrate 101 are
A current film 102 is formed (see FIG. 1).

Next, as in the first embodiment, a photoresist is applied to the surface of the semiconductor substrate 101 to be plated.
Then, using a normal photolithography process or the like,
A mask pattern 201 is formed on the current film 102.

Subsequently, a wiring pattern is formed on the surface of the semiconductor substrate 101 to be plated as described below (see FIG. 3).

First, the six electrodes 301, 301,...
Is used to hold the semiconductor substrate 101. At this time, the surface of the semiconductor substrate 101 to be plated faces downward. FIG.
As shown in (B), the electrodes 301, 301,... Are arranged on the end face of the semiconductor substrate 101 at substantially equal intervals, and the pressing force of each electrode 301, 301,. , The semiconductor substrate 101 can be held.

The plating solution is blown up from below the semiconductor substrate 101 while supplying current from the electrodes 301, 301,... To the current film 102. As a result, the exposed surface of the current film 102, that is, the surface on which the mask pattern 201 is not formed, is plated to form a wiring pattern. As in the first embodiment, the plating solution is not particularly limited, and the same plating solution as in the related art can be used.

Thereafter, the wiring process is completed by removing the mask pattern, unnecessary current film 102, and the like.

As described above, the end face of the semiconductor substrate 101
Or more electrodes (here, six electrodes 301, 301,
…)), The holding plate 202 (see FIG. 2)
May not be used.

According to this embodiment, it is easy to use a large number of electrodes, and therefore, it is possible to further reduce the occurrence of poor conduction as compared with the case of the first embodiment.

Third Embodiment A method for manufacturing a semiconductor device according to a third embodiment of the present invention will be described below with reference to FIGS.

FIG. 4 is a schematic sectional view for explaining a wiring step according to the manufacturing method of this embodiment.

First, in the same manner as in the first embodiment, the surface to be plated and the end surface of the semiconductor substrate 101 are
A current film 102 is formed (see FIG. 1).

Next, as in the first embodiment, a photoresist is applied to the surface of the semiconductor substrate 101 to be plated.
Then, using a normal photolithography process or the like,
A mask pattern 201 is formed on the current film 102.

Subsequently, a wiring pattern is formed on the surface to be plated of the semiconductor substrate 101 as follows (see FIG. 4).

First, the semiconductor substrate 101 is placed on the holding plate 401.
Hold. At this time, the surface of the semiconductor substrate 101 to be plated faces downward. Then, one or more electrodes 402, 402,
... are arranged. At this time, each of the electrodes 402, 402,
Are arranged so as not to protrude toward the surface of the semiconductor substrate 101 to be plated.

Then, a plating solution is blown up from below the semiconductor substrate 101 while supplying current from the electrodes 402, 402,... To the current film 102. As a result, the exposed surface of the current film 102, that is, the surface on which the mask pattern 201 is not formed, is plated to form a wiring pattern. As in the first embodiment, the plating solution is not particularly limited, and the same plating solution as in the related art can be used.

Thereafter, the wiring process is completed by removing the mask pattern, unnecessary current film 102, and the like.

As described above, the electrodes 402, 402,... Are arranged on the end surface of the semiconductor substrate 101 so as not to protrude toward the surface of the semiconductor substrate to be plated. Accordingly, when the plating solution is blown up from below the semiconductor substrate 101, the flow of the plating solution is not alienated by the electrodes 402, 402,..., So that it is easy to form a uniform plating layer. . Conversely, a plating layer having a distribution can be intentionally formed depending on how the plating solution is blown up.

Further, the end face of the semiconductor substrate 101 is
Are similar to the above-described embodiments in that the contact surfaces are widened so that poor contact can be reduced.

Further, a plurality of electrodes 402, 402,.
In the case where... Is used, the point that the formation failure of the wiring pattern due to the contact failure can be further reduced is the same as in the above-described embodiments.

Fourth Embodiment A method of manufacturing a semiconductor device according to a fourth embodiment of the present invention will be described below with reference to FIGS.

FIG. 5 is a schematic sectional view for explaining a wiring step according to the manufacturing method of this embodiment.

First, in the same manner as in the first embodiment, the surface to be plated and the end surface of the semiconductor substrate 101 are
A current film 102 is formed (see FIG. 1).

Next, as in the first embodiment, a photoresist is applied to the surface of the semiconductor substrate 101 to be plated.
Then, using a normal photolithography process or the like,
A mask pattern 201 is formed on the current film 102.

Subsequently, a wiring pattern is formed on the surface to be plated of the semiconductor substrate 101 as described below (see FIG. 5).

First, a plurality of electrodes 501, 501,.
And the current film 10 on the end face of the semiconductor substrate 101.
Contact 2 At this time, the electrodes 501, 501,.
Is inclined such that it goes away on the side of the semiconductor substrate 101 to be plated. As in the second embodiment, the semiconductor substrate 1
.. Are held by the pressing force of the electrodes 501, 501,. Also in this embodiment, the semiconductor substrate 1
01 turns the surface to be plated downward.

Then, while supplying current from the electrodes 501, 501,... To the current film 102, a plating solution is blown up from below the semiconductor substrate 101. As a result, the exposed surface of the current film 102, that is, the surface on which the mask pattern 201 is not formed, is plated to form a wiring pattern. As in the first embodiment, the plating solution is not particularly limited, and the same plating solution as in the related art can be used.

Thereafter, the wiring process is completed by removing the mask pattern, unnecessary current film 102, and the like.

As described above, in this embodiment, the electrode 5
, 01, 501,... Are tilted away from the surface to be plated of the semiconductor substrate 101 so that the current film 1
02. Thereby, the semiconductor substrate 1
When the plating solution is blown up from below 01, the pressing force of the electrodes 501, 501,... Against the semiconductor substrate 101 can be made extremely large.

It is needless to say that the same effects as those of the first and second embodiments can be obtained.

[0068]

As described above in detail, according to the present invention, it is not necessary to protrude the electrode on the surface of the semiconductor substrate to be plated, and it is possible to reduce the possibility of poor contact between the electrode and the current film. Therefore, the yield and reliability of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view for illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIGS. 2A and 2B are schematic diagrams for explaining a method for manufacturing the semiconductor device according to the first embodiment, in which FIG.
(B) is a plan view.

FIG. 3 is a schematic view for explaining a method for manufacturing a semiconductor device according to a second embodiment, in which FIG.
(B) is a plan view.

FIG. 4 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to a third embodiment.

FIG. 5 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to a fourth embodiment.

6A and 6B are schematic cross-sectional views for explaining a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 Reference Signs List 101 semiconductor substrate 102 current film 103 holding jig 104 deposition source 201 mask pattern 202 holding plate 203 electrode

Claims (4)

(57) [Claims] 1. A method of manufacturing a semiconductor device, comprising a step of forming a wiring pattern on a semiconductor substrate by a plating method, wherein: a film forming step of forming a current film on a surface to be plated and an end surface of the semiconductor substrate; A mask forming step of forming a mask pattern on the current film on the surface to be plated, a pressing plate for pressing an end face of the orientation flat of the semiconductor substrate, and a rod-shaped electrode for pressing the end face at a position opposed to the pressing plate. A supporting step of supporting the semiconductor substrate, and a plating step of forming the wiring pattern by a plating method while supplying current to the current film using the rod-shaped electrodes. A method for manufacturing a semiconductor device. 2. A method of manufacturing a semiconductor device, comprising a step of forming a wiring pattern on a semiconductor substrate by a plating method, wherein: a film forming step of forming a current film on a surface to be plated and an end surface of the semiconductor substrate; A mask forming step of forming a mask pattern on the current film on the surface to be plated; a supporting step of supporting the semiconductor substrate by pressing an end face of the semiconductor substrate with a plurality of rod-shaped electrodes; A plating step of forming the wiring pattern by a plating method while supplying a current to the current film. 3. A method of manufacturing a semiconductor device, comprising a step of forming a wiring pattern on a semiconductor substrate by a plating method, wherein: a film forming step of forming a current film on a surface to be plated and an end surface of the semiconductor substrate; A mask forming step of forming a mask pattern on the current film on the surface to be plated; and pressing the end surface of the semiconductor substrate with a plurality of rod-shaped electrodes provided so as not to protrude toward the surface to be plated of the semiconductor substrate. A supporting step of supporting the semiconductor substrate, and a plating step of forming the wiring pattern by a plating method while supplying current to the current film using the rod-shaped electrodes. A method for manufacturing a semiconductor device. 4. A method for manufacturing a semiconductor device, comprising a step of forming a wiring pattern on a semiconductor substrate by a plating method, wherein: a film forming step of forming a current film on a surface to be plated and an end surface of the semiconductor substrate; A mask forming step of forming a mask pattern on the current film on the surface to be plated; and pressing the end surface of the semiconductor substrate with a plurality of rod-like electrodes inclined away from the surface to be plated of the semiconductor substrate. A supporting step of supporting the semiconductor substrate, and a plating step of forming the wiring pattern by a plating method while supplying current to the current film using the rod-shaped electrodes. A method for manufacturing a semiconductor device.