CN105225989B - Plasma etching machine - Google Patents
Plasma etching machine Download PDFInfo
- Publication number
- CN105225989B CN105225989B CN201510657768.0A CN201510657768A CN105225989B CN 105225989 B CN105225989 B CN 105225989B CN 201510657768 A CN201510657768 A CN 201510657768A CN 105225989 B CN105225989 B CN 105225989B
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- Prior art keywords
- hole
- screw
- plasma etching
- etching machine
- seal body
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
Abstract
The present invention provides a kind of plasma etching machine, belongs to technical field of manufacturing semiconductors.The plasma etching machine includes reaction chamber, it is provided with ion in the reaction chamber and generates electrode, the ion generates and is provided with support frame above electrode to support workpiece to be processed, the support frame offers mounting hole, the ion generates electrode and offers threaded hole in the region for corresponding to the mounting hole, the mounting hole and the threaded hole are connected by screw to, the axial direction of the screw and it is located above the screw and is provided with sealing unit, the sealing unit is for sealing the mounting hole.The plasma etching machine can the plasma long-term effectively above barrier support frame enter ion and generate in the threaded hole of electrode, avoid plasma damage ion from generating electrode.
Description
Technical field
The invention belongs to the technical fields of semiconductors manufacture, and in particular to a kind of plasma etching machine.
Background technique
In existing plasma etching machine, as shown in Figure 1, the support frame 1 and ion inside its reaction chamber generate electrode 2
Generally use the connection of mounting screw 3.In order to avoid the plasma above mounting hole by mounting screw 3 and inner wall of the hole installing it
Between gap-contact to ion generate electrode 2 and cause ion generate electrode 2 damage, mounting screw 3 is upper in mounting hole
Side is provided with potsherd 4.
At least there are the following problems in the prior art for inventor's discovery:
Firstly, in the case that potsherd 4 is constantly in plasma bombardment, diameter and thickness be constantly lost cause etc. from
Daughter easily enters in mounting hole and generates electrode 2 to damage ion；Secondly, etching technics newly developed has plasma
Energy increase, the loss rate of potsherd 4 becomes faster, and the degree of injury that plasma generates electrode 2 to ion is also more serious；Most
Afterwards, mounting screw 3 is easy to happen fragmentation when expanding with heat and contract with cold, and generates electrode 2 with ion so as to cause support frame 1 and connect not
Securely.
It is to generate electrode 2 because of ion to be made of metal material why plasma, which can damage ion and generate electrode 2, etc.
Gas ions meeting molten metal material can destroy threaded hole when plasma, which enters ion, to be generated in the threaded hole of electrode 2,
Cause ion generate 2 insulating properties of electrode fail to using, and cause ion generate 2 paradoxical discharge of electrode cause alarm set
Standby frequently alarm.
Summary of the invention
The present invention is directed to existing above-mentioned deficiency, provides a kind of plasma etching machine, which has sealing
Property good component for barrier plasma by mounting hole, and then touch ion and generate electrode electrode is generated to ion and make
At damage.
It solves technical solution used by present invention problem and is to provide a kind of plasma etching machine, the plasma etching
Machine includes reaction chamber, and ion is provided in the reaction chamber and generates electrode, the ion generates and is provided with branch above electrode
Support frame is to support workpiece to be processed, and the support frame offers mounting hole, and the ion generates electrode and corresponding to the installation
The region in hole offers threaded hole, and the mounting hole and the threaded hole are connected by screw to, and the axial direction of the screw and is located at
Sealing unit is provided with above the screw, the sealing unit is for sealing the mounting hole.
Preferably, the mounting hole be stepped hole, the stepped hole include the first stage hole and be located at first rank
Second-order hole above hole, the aperture of the second-order hole are greater than the aperture in the first stage hole, the screw
Main body is set in the threaded hole and the first stage hole, and the head of the screw is located in the second-order hole, institute
State the top that sealing unit is located at the head in the second-order hole and being covered in the screw.
Preferably, the sealing unit includes seal body and sealing ring, and the outer wall of the seal body offers ring
Shape slot, the axial direction of the annular groove is consistent with the axial direction of the main body of the screw, and the sealing ring is set to described
In annular groove, the outer diameter of the sealing ring is greater than the aperture of the second-order hole, and the internal diameter of the sealing ring is less than described close
Seal the diameter of ontology.
Preferably, the center portion of the seal body towards the end of the screw side, which is inwardly recessed, to form and institute
The first coaxial groove of seal body is stated, the head of the screw is coated in first groove.
Preferably, the seal body uses teflon material, ceramic material, engineering plastics, resin material, carbon fiber
At least one of material formed, the sealing ring is formed using high fluorine material.
Preferably, the mounting hole further includes the phase III hole above the second-order hole, the third
The aperture in stage hole is greater than the aperture of the second-order hole, is provided in the phase III hole same with the main body of the screw
The sealed cap of axis, the sealed cap are located in the phase III hole and are adapted with the phase III hole.
Preferably, the edge of the sealed cap extends vertically to form protrusion to the side towards the seal body,
So that the sealed cap is forming the second groove towards the side of the seal body, the seal body is coated on described
In second groove.
Preferably, the sealed cap is formed using the metal material that ceramic material or surface are coated with oxidation film.
Preferably, the support frame includes the four pieces of ceramic blocks to overlap end to end, and is set on every piece of ceramic block
The mounting hole there are two setting.
Preferably, the screw uses at least one of zirconium oxide, stainless steel, engineering plastics, carbon fiber material shape
At.
Plasma etching machine provided by the invention is disposed in the mounting hole opened up on support frame close from top to bottom
Sealing cap lid, sealing unit and screw, can the plasma long-term effectively above barrier support frame enter ion and generate electricity
In the threaded hole of pole, plasma damage threaded hole is avoided, while the insulating properties for avoiding plasma that ion is made to generate electrode is lost
The phenomenon that effect and paradoxical discharge.Correspondingly, the plasma etching machine has longer service life, and can adapt to open in newly
The etching technics of hair has better market prospects.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that existing plasma etching machine inner support frame and ion generate electrode connecting portion point；
Fig. 2 is the plasma etching machine inner support frame of the embodiment of the present invention 1 and ion generates the structure that electrode connecting portion is divided
Schematic diagram；
Fig. 3 is the top view of the complete structure of support frame in Fig. 2；
Fig. 4 is the plasma etching machine inner support frame of the embodiment of the present invention 2 and ion generates the structure that electrode connecting portion is divided
Schematic diagram；
Wherein, appended drawing reference are as follows:
1, support frame；11, ceramic block；2, ion generates electrode；3, mounting screw；
4, potsherd；5, screw；6, sealing unit；61, seal body；62, sealing ring；7, sealed cap；8, gasket.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
Embodiment 1:
The present embodiment provides a kind of plasma etching machine, which includes sealed cap and sealing unit, can
Ion is entered with the plasma above barrier support frame long-term effectively to generate in the threaded hole of electrode, avoids plasma
Damage threaded hole.
As shown in Fig. 2, the plasma etching machine includes reaction chamber, it is provided with ion in reaction chamber and generates electrode 2, from
Son, which generates, is provided with support frame 1 above electrode 2 to support workpiece to be processed, and support frame 1 offers mounting hole, and ion generates electrode
2 offer threaded hole in the region for corresponding to mounting hole, and mounting hole and threaded hole are connected by screw 5, screw 5 axial direction,
And the top for being located at screw 5 is provided with sealing unit 6, sealing unit 6 for sealing mounting hole, screw 5 axial direction and be located at
The top of sealing unit 6 is provided with sealed cap 7, and sealed cap 7 matches the plasma for stopping top with mounting hole
It enters in mounting hole.
The specific structure is shown in FIG. 3, and support frame 1 includes four pieces of ceramic blocks 11 overlapping end to end, and every piece of ceramic block
There are two mounting holes for setting on 11.As shown in Fig. 2, the mounting hole that support frame 1 opens up is stepped hole, including first stage hole, position
Second-order hole above first stage hole and the phase III hole above second-order hole, the aperture of second-order hole
Greater than the aperture in first stage hole, the aperture in phase III hole is greater than the aperture of second-order hole.
The main body of screw 5 is located in threaded hole and first stage hole, and the head of screw 5 is located in second-order hole, thus
Make support frame 1 generate electrode 2 with ion to be connected.The sealed cap 7 coaxial with screw 5 is provided in phase III hole, it is close
Sealing cap lid 7 is matched with phase III hole.
In order to guarantee the reliability of the connection of screw 5, preferably main body of the screwing length of screw 5 and threaded hole greater than screw 5
Diameter, and gasket 8 is set in the lower head of screw 5.In order to make screw 5 that there is preferable stability, no when expanding with heat and contract with cold
Can occur embrittlement phenomenon and with high temperature resistant and insulation performance, the material of screw 5 preferably using using zirconium oxide, stainless steel,
One of materials such as high-strength engineering plastic, carbon fiber.In order to keep screw 5 easy to loading and unloading, screw 5 preferably uses interior hexangle type
Screw.
Sealing unit 6 above screw 5 is matched with second-order hole.Sealing unit 6 includes 61 He of seal body
Sealing ring 62.Wherein, the outer wall of seal body 61 offers annular groove, the axial direction of annular groove and the axial direction of screw 5
Unanimously, sealing ring 62 is set in annular groove.In order to enable sealing ring 62 preferably to seal second-order hole and seal body
Gap between 61, makes the outer diameter of sealing ring 62 be greater than the aperture of second-order hole, and the internal diameter of sealing ring 62 is less than seal body
61 diameter, make in this way the sealing ring 62 between second-order hole inner wall and seal body 61 keep certain decrement,
And be arranged and be not susceptible to vibration up and down in a ring groove, between can effectively sealing against between second-order hole and seal body 61
Gap prevents the plasma of 62 top of sealing ring from entering in the threaded hole of lower section.
The shape in the vertical view face of annular groove is determined by the shape of seal body 61.Usual seal body 61 is cylindrical shape,
Correspondingly, the vertical view face of annular groove is annular shape, section can be designed to semicircle, triangle, any one in rectangle.It is close
The vertical view face of seal 62 is also annular shape, and cross sectional shape is corresponding with the cross sectional shape of annular groove, as shown in figure 3, annular groove
Cross sectional shape be semicircle, correspondingly, the cross sectional shape of sealing ring 62 be circle.Furthermore, so it is easy to understand that work as annular groove
Cross sectional shape be rectangle when, the cross sectional shape of sealing ring is also rectangle.
The center portion of seal body 61 towards the end of 5 side of screw be inwardly recessed to be formed it is coaxial with seal body 61
First groove, and the first groove is enable to coat the head of screw 5.The head of usual screw 5 is cylindrical, and corresponding first
Groove is round recessed, at this point, the diameter of the first groove be greater than screw 5 head diameter, the depth of the first round recessed be less than or
Equal to the thickness on the head of screw 5, seal body 61 can be made to cover the head of screw 5 in this way, keep overall structure more compact.
It is preferred that seal body 61 is made of the insulating materials with resisting plasma corrosion and high temperature resistance, such as special
Fluorine dragon material, ceramic material, engineering plastics, resin material, carbon fiber etc.；It is preferred that sealing ring 62 uses high fluorine material or other exhausted
Edge material is formed.
Sealed cap 7 above sealing unit 6 is located in the phase III hole and mutually fits with phase III hole
Match, and coaxial with the main body of screw 5.The edge of sealed cap 7 extends vertically to form protrusion to the side towards seal body 61,
So that sealing cap 7 forms the second groove towards the side of seal body 61.In general, seal body 61 is cylindrical shape, phase
It answers, the second groove makes the diameter of the second groove for round recessed in order to enable the second groove to coat the top of seal body 61
Greater than the diameter of seal body 61, the depth of the second round recessed is less than or equal to the thickness of seal body 61, can make so close
Sealing cap lid 7 can coat seal body 61, keep overall structure more compact, it is often more important that, the seal cap with the second groove
Lid 7 can more effectively stop the plasma of top to enter in mounting hole compared to the potsherd 4 in Fig. 1.In order to make to prop up
The upper surface of support frame 1 has good flatness, while sealed cap 7 being made to have the effect of preferable barrier plasma, excellent
The thickness of sealed cap 7 is selected to be equal to the depth in phase III hole, so that the upper surface of the upper surface of sealed cap 7 and support frame 1
Concordantly.
It is easily understood that the shape of seal body depends on the shape of second-order hole, the shape of sealing ring is depended on
The shape of seal body, the shape of sealed cap depend on the shape in phase III hole, and the shape of the first groove depends on screw
The shape on head and the shape of the second groove depend on the shape of seal body.In the present embodiment, above-mentioned shape is set
Be calculated as it is round or cylindrical, but be not limited to it is round or cylindrical, can also in other shapes, such as rectangle or cubic shaped.
In order to which the abrasion for being subject to sealed cap 7 under the bombardment of plasma is smaller, sealed cap 7, which preferably uses, to be had
Resisting plasma corrosion, high temperature resistance insulating materials formed, such as ceramic material, surface are coated with the metal material of oxidation film
Deng.
Plasma etching machine in the present embodiment is disposed with sealing in the mounting hole opened up on support frame from top to bottom
Cap, sealing unit and screw, can the plasma long-term effectively above barrier support frame enter ion and generate electrode
Threaded hole in, avoid plasma damage threaded hole, at the same avoid plasma make ion generate electrode insulating properties failure
And the phenomenon that paradoxical discharge.Correspondingly, the plasma etching machine has longer service life, and can adapt in newly developed
Etching technics, have better market prospects.
Embodiment 2:
The present embodiment provides a kind of plasma etching machine, the difference with the plasma etching machine of embodiment 1 is: this reality
The plasma etching machine for applying example offer does not have sealed cap structure, be disposed in mounting hole from top to bottom sealing unit and
Screw.
The specific structure of plasma etching machine provided in this embodiment is as shown in figure 4, the mounting hole opened up on support frame 1 is
Stepped hole, the second-order hole including first stage hole and above first stage hole, the aperture of second-order hole are greater than the
Single order hole.Ion generates electrode 2 and offers threaded hole in the region for corresponding to mounting hole.Mounting hole and threaded hole pass through screw
5 connections.Correspondingly, the main body of screw 5 is located in threaded hole and first stage hole, the head of screw 5 is located in second-order hole,
It is connected to make support frame 1 generate electrode 2 with ion.
Axial direction in screw 5 and the top positioned at screw 5 are provided with sealing unit 6, and sealing unit 6 includes sealing
Ontology 61 and sealing ring 62, seal body 61 are matched with second-order hole.It is preferred that the thickness of seal body 61 is equal to second-order
The depth of hole makes the upper surface of support frame 1 keep good flatness.
In the other structures and embodiment 1 of the plasma etching machine of the shape and construction and the present embodiment of sealing unit 6
Corresponding structure is identical, and which is not described herein again.
Plasma etching machine in the present embodiment is disposed with sealing in the mounting hole opened up on support frame from top to bottom
Unit and screw, can the plasma long-term effectively above barrier support frame enter the threaded hole that ion generates electrode
Insulating properties failure and exception interior, avoid plasma damage threaded hole, while avoiding plasma that ion is made to generate electrode
The phenomenon that electric discharge.Correspondingly, the plasma etching machine has longer service life, and can adapt in etching work newly developed
Skill has better market prospects.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of plasma etching machine, including reaction chamber, it is provided with ion in the reaction chamber and generates electrode, the ion
It generates and is provided with support frame above electrode to support workpiece to be processed, the support frame offers mounting hole, and the ion generates
Electrode offers threaded hole in the region for corresponding to the mounting hole, and the mounting hole and the threaded hole are connected by screw to,
It is characterized in that, the axial direction of the screw and be located at the screw above be provided with sealing unit, the sealing unit is used for
Seal the mounting hole；The mounting hole be stepped hole, the stepped hole include the first stage hole and be located at the first stage
Second-order hole above hole, the aperture of the second-order hole are greater than the aperture in the first stage hole, the master of the screw
Body is set in the threaded hole and the first stage hole, and the head of the screw is located in the second-order hole, described
Sealing unit is located at the top on the head in the second-order hole and being covered in the screw.
2. plasma etching machine according to claim 1, which is characterized in that the sealing unit includes seal body and close
Seal, the outer wall of the seal body offer annular groove, the axis of the axial direction of the annular groove and the main body of the screw
Consistent to direction, the sealing ring is set in the annular groove, and the outer diameter of the sealing ring is greater than the second-order hole
Aperture, the internal diameter of the sealing ring are less than the diameter of the seal body.
3. plasma etching machine according to claim 2, which is characterized in that the seal body is towards the screw side
The center portion of end be inwardly recessed to form first groove coaxial with the seal body, the head of the screw is coated on
In first groove.
4. plasma etching machine according to claim 2, which is characterized in that the seal body uses ceramic material, work
At least one of engineering plastics, carbon fiber material is formed, and the sealing ring is formed using high fluorine material.
5. plasma etching machine according to claim 2, which is characterized in that the mounting hole further includes being located at described second
Phase III hole above stage hole, the aperture in the phase III hole are greater than the aperture of the second-order hole, the third
The sealed cap coaxial with the main body of the screw is provided in stage hole, the sealed cap is located in the phase III hole
And it is adapted with the phase III hole.
6. plasma etching machine according to claim 5, which is characterized in that the edge of the sealed cap is to described in
The side of seal body extends vertically to form protrusion, so that the sealed cap is formed towards the side of the seal body
Second groove, the seal body are coated in second groove.
7. plasma etching machine according to claim 5, which is characterized in that the sealed cap uses ceramic material or table
The metal material that face is coated with oxidation film is formed.
8. plasma etching machine according to claim 1-7, which is characterized in that the support frame includes mutual end to end
Mutually four pieces of ceramic blocks of linking, and there are two the mounting holes for setting on every piece of ceramic block.
9. plasma etching machine according to claim 1-7, which is characterized in that the screw using zirconium oxide,
At least one of stainless steel, engineering plastics, carbon fiber material is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510657768.0A CN105225989B (en) | 2015-10-13 | 2015-10-13 | Plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510657768.0A CN105225989B (en) | 2015-10-13 | 2015-10-13 | Plasma etching machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105225989A CN105225989A (en) | 2016-01-06 |
| CN105225989B true CN105225989B (en) | 2018-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510657768.0A Active CN105225989B (en) | 2015-10-13 | 2015-10-13 | Plasma etching machine |
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| Country | Link |
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| CN (1) | CN105225989B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206385A (en) * | 2016-09-27 | 2016-12-07 | 上海华力微电子有限公司 | A kind of chamber in-vivo metal that reduces pollutes etching polysilicon chamber and the method for content |
| CN108711546B (en) * | 2018-04-28 | 2019-07-23 | 武汉华星光电技术有限公司 | Lower electrode and dry etcher |
| CN108598189B (en) * | 2018-05-15 | 2019-08-13 | 安徽正熹标王新能源有限公司 | A kind of preparation method of crystal silicon solar energy battery |
| CN108470671B (en) * | 2018-05-15 | 2019-08-27 | 上海尔迪仪器科技有限公司 | A kind of plasma etching machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| CN104851832A (en) * | 2014-02-18 | 2015-08-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Fixing device, reaction cavity and plasma processing device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100275671B1 (en) * | 1998-08-26 | 2001-02-01 | 윤종용 | Plasma etching equipment |
-
2015
- 2015-10-13 CN CN201510657768.0A patent/CN105225989B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| CN104851832A (en) * | 2014-02-18 | 2015-08-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Fixing device, reaction cavity and plasma processing device |
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| CN105225989A (en) | 2016-01-06 |
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