CN115735264A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN115735264A
CN115735264A CN202180045017.7A CN202180045017A CN115735264A CN 115735264 A CN115735264 A CN 115735264A CN 202180045017 A CN202180045017 A CN 202180045017A CN 115735264 A CN115735264 A CN 115735264A
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CN
China
Prior art keywords
metal layer
semiconductor substrate
lower metal
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180045017.7A
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English (en)
Chinese (zh)
Inventor
野间诚二
志贺智英
千田厚慈
西胁刚
古村雄太
添野明高
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Denso Corp
Original Assignee
Denso Corp
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Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN115735264A publication Critical patent/CN115735264A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN202180045017.7A 2020-06-26 2021-06-23 半导体装置及其制造方法 Pending CN115735264A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-110888 2020-06-26
JP2020110888A JP2022007763A (ja) 2020-06-26 2020-06-26 半導体装置およびその製造方法
PCT/JP2021/023793 WO2021261521A1 (ja) 2020-06-26 2021-06-23 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
CN115735264A true CN115735264A (zh) 2023-03-03

Family

ID=79281330

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180045017.7A Pending CN115735264A (zh) 2020-06-26 2021-06-23 半导体装置及其制造方法

Country Status (4)

Country Link
US (1) US12581716B2 (https=)
JP (1) JP2022007763A (https=)
CN (1) CN115735264A (https=)
WO (1) WO2021261521A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置
CN116632053B (zh) * 2023-07-25 2024-01-30 深圳市美浦森半导体有限公司 一种rc-igbt器件的控制方法
WO2026048279A1 (ja) * 2024-08-28 2026-03-05 株式会社デンソー 半導体素子

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0376030B2 (https=) * 1981-09-11 1991-12-04 Fujitsu Ltd
JPH08124877A (ja) * 1994-10-24 1996-05-17 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JP2006351717A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置及びその製造方法
CN101017871A (zh) * 2006-02-10 2007-08-15 株式会社半导体能源研究所 半导体器件及其制造方法
JP2008021701A (ja) * 2006-07-11 2008-01-31 Sharp Corp 半導体装置及びその製造方法
JP2015216200A (ja) * 2014-05-09 2015-12-03 株式会社豊田中央研究所 半導体装置
US20160071732A1 (en) * 2014-09-04 2016-03-10 Toyoda Gosei Co., Ltd. Semiconductor device, manufacturing method of the same and method of suppressing decrease of flat band voltage
JP2019145667A (ja) * 2018-02-21 2019-08-29 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638493B2 (ja) 1984-02-15 1994-05-18 三洋電機株式会社 半導体集積回路の製造方法
JPS6312952A (ja) 1986-07-04 1988-01-20 Mitsubishi Heavy Ind Ltd ガスクロマトグラフ用保温ガスサンプラ
JPH01238162A (ja) * 1988-03-18 1989-09-22 Nec Corp 半導体装置
JP5549118B2 (ja) 2009-05-27 2014-07-16 トヨタ自動車株式会社 半導体装置の製造方法
WO2014006695A1 (ja) * 2012-07-03 2014-01-09 新電元工業株式会社 半導体装置
JP5772926B2 (ja) * 2013-01-07 2015-09-02 株式会社デンソー 半導体装置
JP2016099127A (ja) * 2014-11-18 2016-05-30 富士電機株式会社 パワー半導体モジュールの製造方法及びその中間組立ユニット
JP2016143804A (ja) * 2015-02-03 2016-08-08 トヨタ自動車株式会社 半導体装置
JP6616691B2 (ja) * 2016-01-18 2019-12-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017135283A (ja) * 2016-01-28 2017-08-03 ローム株式会社 半導体装置および半導体装置の製造方法
JP6719090B2 (ja) * 2016-12-19 2020-07-08 パナソニックＩｐマネジメント株式会社 半導体素子
JP6773577B2 (ja) 2017-02-01 2020-10-21 トヨタ自動車株式会社 半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0376030B2 (https=) * 1981-09-11 1991-12-04 Fujitsu Ltd
JPH08124877A (ja) * 1994-10-24 1996-05-17 Sanyo Electric Co Ltd 半導体集積回路の製造方法
JP2006351717A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置及びその製造方法
CN101017871A (zh) * 2006-02-10 2007-08-15 株式会社半导体能源研究所 半导体器件及其制造方法
JP2008021701A (ja) * 2006-07-11 2008-01-31 Sharp Corp 半導体装置及びその製造方法
JP2015216200A (ja) * 2014-05-09 2015-12-03 株式会社豊田中央研究所 半導体装置
US20160071732A1 (en) * 2014-09-04 2016-03-10 Toyoda Gosei Co., Ltd. Semiconductor device, manufacturing method of the same and method of suppressing decrease of flat band voltage
JP2019145667A (ja) * 2018-02-21 2019-08-29 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

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JP2022007763A (ja) 2022-01-13
WO2021261521A1 (ja) 2021-12-30
US12581716B2 (en) 2026-03-17
US20230125063A1 (en) 2023-04-20

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