CN115699269A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN115699269A
CN115699269A CN202180042364.4A CN202180042364A CN115699269A CN 115699269 A CN115699269 A CN 115699269A CN 202180042364 A CN202180042364 A CN 202180042364A CN 115699269 A CN115699269 A CN 115699269A
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semiconductor device
main surface
conductivity type
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Chinese (zh)
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池浦奖悟
中野敬志
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/061—Manufacture or treatment of lateral BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
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    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
CN202180042364.4A 2020-06-16 2021-05-24 半导体装置及其制造方法 Pending CN115699269A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-103997 2020-06-16
JP2020103997A JP7354937B2 (ja) 2020-06-16 2020-06-16 半導体装置およびその製造方法
PCT/JP2021/019669 WO2021256182A1 (ja) 2020-06-16 2021-05-24 半導体装置およびその製造方法

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Publication Number Publication Date
CN115699269A true CN115699269A (zh) 2023-02-03

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CN202180042364.4A Pending CN115699269A (zh) 2020-06-16 2021-05-24 半导体装置及其制造方法

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US (1) US12575142B2 (https=)
JP (1) JP7354937B2 (https=)
CN (1) CN115699269A (https=)
WO (1) WO2021256182A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240145462A1 (en) * 2022-10-27 2024-05-02 Globalfoundries Singapore Pte. Ltd. Electrostatic discharge control devices
US12471385B2 (en) * 2022-12-08 2025-11-11 Globalfoundries Singapore Pte. Ltd. Electrostatic discharge protection devices with multiple-depth trench isolation
US12453156B1 (en) * 2024-04-23 2025-10-21 Globalfoundries Singapore Pte. Ltd. High-voltage electrostatic discharge device
US12396236B1 (en) 2024-04-23 2025-08-19 Globalfoundries Singapore Pte. Ltd. High-voltage electrostatic discharge device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338929A (ja) * 2000-05-26 2001-12-07 Sony Corp 半導体装置およびその製造方法
US6382775B1 (en) * 1995-06-28 2002-05-07 Canon Kabushiki Kaisha Liquid ejecting printing head, production method thereof and production method for base body employed for liquid ejecting printing head
JP2010114292A (ja) * 2008-11-07 2010-05-20 Seiko Npc Corp 縦型バイポーラトランジスタ及びその製造方法
JP2011134947A (ja) * 2009-12-25 2011-07-07 Toyota Central R&D Labs Inc 横型半導体装置
CN105895669A (zh) * 2015-02-16 2016-08-24 瑞萨电子株式会社 半导体器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
EP0253724A1 (en) * 1986-07-16 1988-01-20 Fairchild Semiconductor Corporation A method of simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks
JP2000183073A (ja) 1998-12-17 2000-06-30 Rohm Co Ltd バイポーラトランジスタを含む半導体装置
JP2000275129A (ja) 1999-03-24 2000-10-06 Omron Corp 静電容量型センサ
JP2003318188A (ja) 2002-04-24 2003-11-07 Denso Corp ラテラルｐｎｐトランジスタおよびその製造方法
JP2004140235A (ja) 2002-10-18 2004-05-13 Toshiba Corp 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6382775B1 (en) * 1995-06-28 2002-05-07 Canon Kabushiki Kaisha Liquid ejecting printing head, production method thereof and production method for base body employed for liquid ejecting printing head
JP2001338929A (ja) * 2000-05-26 2001-12-07 Sony Corp 半導体装置およびその製造方法
JP2010114292A (ja) * 2008-11-07 2010-05-20 Seiko Npc Corp 縦型バイポーラトランジスタ及びその製造方法
JP2011134947A (ja) * 2009-12-25 2011-07-07 Toyota Central R&D Labs Inc 横型半導体装置
CN105895669A (zh) * 2015-02-16 2016-08-24 瑞萨电子株式会社 半导体器件

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WO2021256182A1 (ja) 2021-12-23
US20230098207A1 (en) 2023-03-30
JP2021197483A (ja) 2021-12-27
JP7354937B2 (ja) 2023-10-03
US12575142B2 (en) 2026-03-10

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