CN1153265C - 用微波形成薄膜的装置和方法 - Google Patents

用微波形成薄膜的装置和方法 Download PDF

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CN1153265C
CN1153265C CNB981263976A CN98126397A CN1153265C CN 1153265 C CN1153265 C CN 1153265C CN B981263976 A CNB981263976 A CN B981263976A CN 98126397 A CN98126397 A CN 98126397A CN 1153265 C CN1153265 C CN 1153265C
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郑善太
申东或
金贤洙
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Samsung Electronics Co Ltd
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Abstract

通过使用微波形成薄膜的装置及其使用方法。该装置包括微波退火炉；用于控制微波退火炉内的空气气氛的状态的退火炉气氛制造器；用于检测微波退火炉内的温度并将其与预定标准温度进行比较并输出误差温度的温度检测/控制器；及用于参照从温度检测/控制器输出的误差温度产生预定温度的微波并将微波提供给微波退火炉的微波电源。通过使用微波的压实可以快速的形成具有精细结构的薄膜。

Description

用微波形成薄膜的装置和方法
技术领域
本发明涉及用于形成薄膜的装置及其方法，更具体的，涉及使用微波形成薄膜的装置及方法。
背景技术
火焰水解沉积(FHD)，化学气相沉积(CVD)，改进的化学气相沉积(MCVD)，物理气相沉积(PVD)，溅射，电子束蒸发沉积，及旋涂方法通常被用于在晶片上形成薄膜。当用上述方法沉积薄膜时，根据诸如所使用的材料，材料的混合比例，流体的速度，温度，等离子体输出电压，及旋转数的变化控制薄膜的密度及沉积速度。
图1示出根据传统火焰水解沉积方法(FHD)的制造薄膜的方法的流程图。使用FHD方法在晶片上形成二氧化硅碳黑(步骤100)。当通过FHD方法形成薄膜时，需要进行高温热处理。用电阻加热炉进行高温热处理。高温热处理用于致密碳黑。首先，在800度到1350度之间加热碳黑(步骤110)。将此温度保持一到三个小时(步骤120)。通过冷却过程形成薄膜(步骤130)
在根据图1的生产薄膜的FHD的方法中，用电阻加热方法致密碳黑的过程需要很长时间。需要四个到六个小时加热碳黑。高温被保持一到二个小时。从加热碳黑，保持高温到从800度降到室温需要15个小时。由于诸如电阻加热炉的加热源处于要加热的样品(晶片及其上的碳黑)外面，样品外的温度上升的比内部快。相应的，叠层碳黑表面的温度比接触碳黑和晶片的界面的温度高。由于碳黑表面和界面层间的温差所造成的为辐射到外面的气体在碳黑层内形成气泡。同样，当用电阻加热炉形成多层膜时，相同温度的热量提供到晶片，前面形成的膜及整个碳黑被再致密。相应的，由于热应力在不同组分的膜间形成断裂。
发明内容
为了解决上述问题，本发明的目的是提供一种使用微波形成薄膜的装置及方法，该装置当在一晶片上形成一单层膜或多层膜时，用微波作为热源快速致密该膜。
为实现上述的目的，其提供一种在当晶片和碳黑形成样品时，用于通过在晶片上致密预定量的碳黑而在晶片上形成薄膜的装置，包括：用于密封样品并将样品暴露到微波中并由此退火样品的微波退火炉，微波退火炉包含围绕样品的绝缘材料，从而防止在致密碳黑的过程中热量被散失；用于控制微波退火炉内的空气气氛的状态的退火炉气氛制造器；用于检测微波退火炉内的温度并将其与预定标准温度进行比较并输出误差温度的温度检测/控制器；用于参照从温度检测/控制器输出的误差温度产生预定温度的微波并将微波提供给微波退火炉的微波电源；以及与温度检测/控制器相连，并与样品相接触用于支撑在绝缘材料内的样品的预定支架。
绝缘材料最好为高温陶瓷绝缘材料。
用微波在晶片上形成薄膜的方法包含：在晶片上形成预定成分的碳黑，用微波加热碳黑，将被加热碳黑的温度维持一段预定时间，并通过冷却碳黑形成薄膜等步骤。
碳黑最好为二氧化硅碳黑。
附图说明
通过下面结合相应附图的描述会对本发明的以上及其他目的及优点有更清楚的认识。
图1为用传统火焰水解沉积方法生产薄膜的方法的流程图；
图2为根据本发明的用微波形成薄膜的装置的结构；
图3为根据本发明的用微波形成薄膜的方法的流程图；
图4A到4C为根据图3工艺致密二氧化硅碳黑的工艺过程。
具体实施方式
下面将参考相应附图对本发明进行详细描述。
图2示出根据本发明的用微波形成薄膜的装置的结构。用微波通过致密叠在晶片上的预定成分的碳黑从而在晶片上形成薄膜的装置包含：微波退火炉200，退火炉气氛制造器210，温度检测/控制器220及微波电源230。微波退火炉200是用于密封其上放有碳黑(样品)的晶片并在该密封空间将样品暴露于微波的一腔室，因此退火样品。微波从与微波退火炉相连的微波导入管240进入，并直接通过内部容积加热方法将热量传递到微波退火炉200内的样品，而不用传统电阻加热炉所使用的通过传导和辐射的热传递方法。通过用微波加热样品可以快速并均匀的加热样品。当加热碳黑时，在温度上升和下降时所产生的不同材料间的热应力(例如晶片和碳黑)会降低。相应的，可形成具有均匀及精细结构的不开裂的薄膜。微波退火炉200还包含围绕样品201的绝缘材料202，从而致密碳黑。相应的，可防止在形成薄膜的过程中的热辐射。绝缘材料202最好由不被强微波所变形的热阻高温陶瓷绝缘材料构成。绝缘材料202可防止晶片及晶片上碳黑的热散失，从而有助于维持某一温度。与绝缘材料202内的外部温度检测器/控制器220相连的支架203支撑样品201。当通过微波对样品201(例如晶片和碳黑)进行预定热处理操作时，支架203首先不应有反应或变形。支架203由防止热散失的材料构成并不与置于其上的晶片在高温下发生反应。用于制造气氛(例如微波退火炉200内的气氛)的退火炉气氛制造器210如果需要的话使微波退火炉真空，并当需要时制造微波退火炉200内的所需气氛，并将所需的气体成分提供给微波退火炉200。与微波退火炉内的支架203相连的温度检测/控制器220用于检测和控制微波退火炉200内的温度，其包含用于检测绝缘材料202的温度的热电偶221，及用于将被热电偶检测的温度与标准温度进行比较并计算温度误差的温度控制器222。向微波退火炉200提供微波的微波发生器230。所提供的微波的功率是根据来自温度检测/控制器220的温度误差将功率加到先前产生的功率上或根据来自温度检测/控制器220的温度误差从先前产生的功率中减去某一功率值。
如图2所示，当用微波加热样品时，样品被加热和冷却的速度比用图1的电阻加热炉加热样品的速度快。相应的，可以在较短的时间内在晶片上形成薄膜，并由于根据本发明的加热方法在碳黑的夹层内不产生气泡，从而形成精细结构的薄膜。
图3为根据本发明的用微波形成薄膜的方法的流程图。在用微波在晶片上形成薄膜的方法中，在晶片上产生预定成分的碳黑(步骤300)。例如，通过在氢焰及氧焰下流动作为晶片的混合物的主要材料的二氧化硅及SiCl4，BCl3，POCl3，及GeCl4的FHD方法在晶片上形成二氧化硅成分的碳黑.用如上所述方法形成的碳黑不与晶片接触且碳黑粒子不紧紧的彼此结合。用微波加热碳黑和晶片(步骤310)。在维持被加热的碳黑和晶片一定时间的预定温度后(步骤320)，将碳黑和晶片冷却到室温(步骤330)，在晶片上形成薄膜。按照薄膜的所需层数通过重复上述工艺多次从而在用图3的工艺形成的薄膜上形成多层薄膜。
图4A到图4C示出通过图3的工艺致密二氧化硅碳黑的工艺。图4A示出在图3的步骤300中的硅基片上形成的二氧化硅碳黑的状态。在此步骤中，二氧化硅碳黑彼此在晶片上不结合和叠加。图4B示出当二氧化硅碳黑和硅晶片被加热并用图3的步骤310到320将其维持在预定温度时的状态。在此步骤中，二氧化硅碳黑彼此紧密结合。图4C示出在图3的步骤330后在硅晶片上形成的二氧化硅薄膜的状态。
由于在微波退火中通过内部容积加热方法加热整个样品，可防止产生气泡。因此，可以生产无内部应力及气泡的均匀的二氧化硅薄膜。同样，由于微波退火的快速升温及降温，可减少退火样品的时间。相应的，可快速形成薄膜。
根据本发明，通过用微波的致密可快速地形成精细均匀结构的薄膜。

Claims (3)

1.当硅晶片和二氧化硅碳黑形成样品时用于通过致密硅晶片上的预定二氧化硅碳黑从而在硅晶片上形成薄膜的装置，包含：
用于密封样品并将样品暴露到微波中并由此退火样品的微波退火炉，微波退火炉包含围绕样品的绝缘材料，从而防止在致密碳黑的过程中热量被散失；
用于控制微波退火炉内的空气气氛的状态的退火炉气氛制造器；
用于检测微波退火炉内的温度并将其与预定标准温度进行比较并输出误差温度的温度检测/控制器；
用于参照从温度检测/控制器输出的误差温度产生预定温度的微波并将微波提供给微波退火炉的微波电源；以及
与温度检测/控制器相连，并与样品相接触用于支撑在绝缘材料内的样品的预定支架。
2.根据权利要求1所述的装置，其特征在于退火炉气氛制造器使微波退火炉内形成真空。
3.根据权利要求1所述的装置，其特征在于绝缘材料为高温陶瓷绝缘材料。
CNB981263976A 1997-12-31 1998-12-29 用微波形成薄膜的装置和方法 Expired - Fee Related CN1153265C (zh)

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