CN115280470B - 热处理装置和热处理方法 - Google Patents

热处理装置和热处理方法 Download PDF

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Publication number
CN115280470B
CN115280470B CN202180021355.7A CN202180021355A CN115280470B CN 115280470 B CN115280470 B CN 115280470B CN 202180021355 A CN202180021355 A CN 202180021355A CN 115280470 B CN115280470 B CN 115280470B
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China
Prior art keywords
gas
substrate
gas supply
heat treatment
wafer
Prior art date
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CN202180021355.7A
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English (en)
Chinese (zh)
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CN115280470A (zh
Inventor
川上真一路
佐野要平
鬼塚智也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to CN202510241217.XA priority Critical patent/CN120178619A/zh
Publication of CN115280470A publication Critical patent/CN115280470A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
CN202180021355.7A 2020-03-24 2021-03-15 热处理装置和热处理方法 Active CN115280470B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202510241217.XA CN120178619A (zh) 2020-03-24 2021-03-15 基板处理方法、基板处理装置、计算机可读的存储介质以及计算机程序产品

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020053305 2020-03-24
JP2020-053305 2020-03-24
PCT/JP2021/010419 WO2021193202A1 (ja) 2020-03-24 2021-03-15 熱処理装置及び熱処理方法

Related Child Applications (1)

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CN202510241217.XA Division CN120178619A (zh) 2020-03-24 2021-03-15 基板处理方法、基板处理装置、计算机可读的存储介质以及计算机程序产品

Publications (2)

Publication Number Publication Date
CN115280470A CN115280470A (zh) 2022-11-01
CN115280470B true CN115280470B (zh) 2025-03-18

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CN202510241217.XA Pending CN120178619A (zh) 2020-03-24 2021-03-15 基板处理方法、基板处理装置、计算机可读的存储介质以及计算机程序产品

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Country Status (6)

Country Link
US (2) US12298668B2 (https=)
JP (1) JP7456491B2 (https=)
KR (2) KR102902149B1 (https=)
CN (2) CN115280470B (https=)
TW (2) TW202534798A (https=)
WO (1) WO2021193202A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023177658A (ja) * 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
KR102765522B1 (ko) * 2022-12-22 2025-02-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (1)

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CN108183068A (zh) * 2016-12-08 2018-06-19 东京毅力科创株式会社 基片处理方法和热处理装置

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JPH10208997A (ja) 1997-01-16 1998-08-07 Fujitsu Ltd レジスト膜のパターン形成方法及びパターン形成装置
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JP2001133959A (ja) * 1999-11-08 2001-05-18 Nikon Corp マスク基板、パターン保護材、マスク保護装置及びマスク、並びに露光装置及びデバイス製造方法
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2005277268A (ja) * 2004-03-26 2005-10-06 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
US7465680B2 (en) * 2005-09-07 2008-12-16 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
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JP4930495B2 (ja) 2008-12-04 2012-05-16 東京エレクトロン株式会社 基板加熱装置及び基板加熱方法
JP2010208997A (ja) * 2009-03-11 2010-09-24 Okayama Univ 置換ジフェニルメタン酸誘導体を含有する医薬組成物
JP5655895B2 (ja) 2013-06-05 2015-01-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6411967B2 (ja) 2015-07-29 2018-10-24 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
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Publication number Publication date
JP7456491B2 (ja) 2024-03-27
US12298668B2 (en) 2025-05-13
US12572077B2 (en) 2026-03-10
CN115280470A (zh) 2022-11-01
TW202534798A (zh) 2025-09-01
WO2021193202A1 (ja) 2021-09-30
KR102902149B1 (ko) 2025-12-19
JPWO2021193202A1 (https=) 2021-09-30
US20230176484A1 (en) 2023-06-08
JP2024073500A (ja) 2024-05-29
TWI885087B (zh) 2025-06-01
KR20220157990A (ko) 2022-11-29
CN120178619A (zh) 2025-06-20
TW202147454A (zh) 2021-12-16
US20250180996A1 (en) 2025-06-05
KR20250024133A (ko) 2025-02-18

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