JP7456491B2 - 熱処理装置及び熱処理方法 - Google Patents

熱処理装置及び熱処理方法 Download PDF

Info

Publication number
JP7456491B2
JP7456491B2 JP2022509954A JP2022509954A JP7456491B2 JP 7456491 B2 JP7456491 B2 JP 7456491B2 JP 2022509954 A JP2022509954 A JP 2022509954A JP 2022509954 A JP2022509954 A JP 2022509954A JP 7456491 B2 JP7456491 B2 JP 7456491B2
Authority
JP
Japan
Prior art keywords
gas
substrate
gas supply
heat treatment
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022509954A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021193202A5 (https=
JPWO2021193202A1 (https=
Inventor
真一路 川上
要平 佐野
智也 鬼塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2021193202A1 publication Critical patent/JPWO2021193202A1/ja
Publication of JPWO2021193202A5 publication Critical patent/JPWO2021193202A5/ja
Priority to JP2024033191A priority Critical patent/JP7852662B2/ja
Application granted granted Critical
Publication of JP7456491B2 publication Critical patent/JP7456491B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
JP2022509954A 2020-03-24 2021-03-15 熱処理装置及び熱処理方法 Active JP7456491B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024033191A JP7852662B2 (ja) 2020-03-24 2024-03-05 熱処理方法、プログラム及び熱処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020053305 2020-03-24
JP2020053305 2020-03-24
PCT/JP2021/010419 WO2021193202A1 (ja) 2020-03-24 2021-03-15 熱処理装置及び熱処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024033191A Division JP7852662B2 (ja) 2020-03-24 2024-03-05 熱処理方法、プログラム及び熱処理装置

Publications (3)

Publication Number Publication Date
JPWO2021193202A1 JPWO2021193202A1 (https=) 2021-09-30
JPWO2021193202A5 JPWO2021193202A5 (https=) 2022-12-02
JP7456491B2 true JP7456491B2 (ja) 2024-03-27

Family

ID=77892121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022509954A Active JP7456491B2 (ja) 2020-03-24 2021-03-15 熱処理装置及び熱処理方法

Country Status (6)

Country Link
US (2) US12298668B2 (https=)
JP (1) JP7456491B2 (https=)
KR (2) KR102902149B1 (https=)
CN (2) CN115280470B (https=)
TW (2) TW202534798A (https=)
WO (1) WO2021193202A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023177658A (ja) * 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
KR102765522B1 (ko) * 2022-12-22 2025-02-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218866A (ja) 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP2009294439A (ja) 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
JP2010135569A (ja) 2008-12-04 2010-06-17 Tokyo Electron Ltd 基板加熱装置及び基板加熱方法
JP2013179354A (ja) 2013-06-05 2013-09-09 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2017032658A (ja) 2015-07-29 2017-02-09 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
JP2019500490A (ja) 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3290943B2 (ja) 1997-01-16 2002-06-10 東京エレクトロン株式会社 レジスト塗布現像処理装置およびレジスト処理方法
JPH10208997A (ja) 1997-01-16 1998-08-07 Fujitsu Ltd レジスト膜のパターン形成方法及びパターン形成装置
US6057084A (en) 1997-10-03 2000-05-02 Fusion Systems Corporation Controlled amine poisoning for reduced shrinkage of features formed in photoresist
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
JP2001133959A (ja) * 1999-11-08 2001-05-18 Nikon Corp マスク基板、パターン保護材、マスク保護装置及びマスク、並びに露光装置及びデバイス製造方法
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2005277268A (ja) * 2004-03-26 2005-10-06 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
US7465680B2 (en) * 2005-09-07 2008-12-16 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
JP2010208997A (ja) * 2009-03-11 2010-09-24 Okayama Univ 置換ジフェニルメタン酸誘導体を含有する医薬組成物
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP2017173420A (ja) 2016-03-22 2017-09-28 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP6781031B2 (ja) 2016-12-08 2020-11-04 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP6767257B2 (ja) 2016-12-22 2020-10-14 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6882091B2 (ja) * 2017-06-21 2021-06-02 キヤノン株式会社 露光装置及び物品の製造方法
JP2019145714A (ja) * 2018-02-22 2019-08-29 東芝メモリ株式会社 パターン形成方法
KR102750860B1 (ko) 2018-08-30 2025-01-09 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218866A (ja) 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP2009294439A (ja) 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
JP2010135569A (ja) 2008-12-04 2010-06-17 Tokyo Electron Ltd 基板加熱装置及び基板加熱方法
JP2013179354A (ja) 2013-06-05 2013-09-09 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2017032658A (ja) 2015-07-29 2017-02-09 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
JP2019500490A (ja) 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成

Also Published As

Publication number Publication date
US12298668B2 (en) 2025-05-13
US12572077B2 (en) 2026-03-10
CN115280470A (zh) 2022-11-01
TW202534798A (zh) 2025-09-01
WO2021193202A1 (ja) 2021-09-30
KR102902149B1 (ko) 2025-12-19
JPWO2021193202A1 (https=) 2021-09-30
US20230176484A1 (en) 2023-06-08
JP2024073500A (ja) 2024-05-29
TWI885087B (zh) 2025-06-01
CN115280470B (zh) 2025-03-18
KR20220157990A (ko) 2022-11-29
CN120178619A (zh) 2025-06-20
TW202147454A (zh) 2021-12-16
US20250180996A1 (en) 2025-06-05
KR20250024133A (ko) 2025-02-18

Similar Documents

Publication Publication Date Title
JP5575706B2 (ja) 疎水化処理装置、疎水化処理方法、プログラム及びコンピュータ記録媒体。
CN108183068B (zh) 基片处理方法和热处理装置
US8757089B2 (en) Coating and developing apparatus, coating and developing method, and storage medium
US12572077B2 (en) Heat treatment apparatus and heat treatment method
JP4421501B2 (ja) 加熱装置、塗布、現像装置及び加熱方法
JP2024017893A (ja) 基板処理方法、プログラム及び基板処理装置
JP4450784B2 (ja) 塗布、現像装置及びその方法
JP7852662B2 (ja) 熱処理方法、プログラム及び熱処理装置
JP5415881B2 (ja) 疎水化処理装置、疎水化処理方法、プログラム及びコンピュータ記憶媒体
JP2009246161A (ja) 基板処理方法及び基板処理装置
KR20230167732A (ko) 열 처리 장치, 열 처리 방법 및 기억 매체
US20260016753A1 (en) Substrate processing system, substrate processing method, and recording medium
WO2025164515A1 (ja) 基板処理装置、基板処理方法及びコンピュータ記憶媒体
JP2001210584A (ja) シリル化処理装置及びシリル化処理方法
KR20240048484A (ko) 기판 처리 방법, 기판 처리 장치 및 컴퓨터 기억 매체
WO2025184252A1 (en) Equipment and method for post-exposure bake and dry development of extreme ultraviolet photoresists
JP2026012048A (ja) レジスト膜成膜方法、レジスト膜成膜装置及び記憶媒体
JP2011124353A (ja) 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220912

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220926

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231017

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231205

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240226

R150 Certificate of patent or registration of utility model

Ref document number: 7456491

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150