TW202534798A - 熱處理裝置、熱處理方法及記憶媒體 - Google Patents

熱處理裝置、熱處理方法及記憶媒體

Info

Publication number
TW202534798A
TW202534798A TW114116908A TW114116908A TW202534798A TW 202534798 A TW202534798 A TW 202534798A TW 114116908 A TW114116908 A TW 114116908A TW 114116908 A TW114116908 A TW 114116908A TW 202534798 A TW202534798 A TW 202534798A
Authority
TW
Taiwan
Prior art keywords
gas
heat treatment
aforementioned
substrate
wafer
Prior art date
Application number
TW114116908A
Other languages
English (en)
Chinese (zh)
Inventor
一路
佐野要平
鬼智也
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202534798A publication Critical patent/TW202534798A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
TW114116908A 2020-03-24 2021-03-11 熱處理裝置、熱處理方法及記憶媒體 TW202534798A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020053305 2020-03-24
JP2020-053305 2020-03-24

Publications (1)

Publication Number Publication Date
TW202534798A true TW202534798A (zh) 2025-09-01

Family

ID=77892121

Family Applications (2)

Application Number Title Priority Date Filing Date
TW114116908A TW202534798A (zh) 2020-03-24 2021-03-11 熱處理裝置、熱處理方法及記憶媒體
TW110108619A TWI885087B (zh) 2020-03-24 2021-03-11 熱處理裝置及熱處理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110108619A TWI885087B (zh) 2020-03-24 2021-03-11 熱處理裝置及熱處理方法

Country Status (6)

Country Link
US (2) US12298668B2 (https=)
JP (1) JP7456491B2 (https=)
KR (2) KR102902149B1 (https=)
CN (2) CN115280470B (https=)
TW (2) TW202534798A (https=)
WO (1) WO2021193202A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023177658A (ja) * 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
KR102765522B1 (ko) * 2022-12-22 2025-02-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
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JP3290943B2 (ja) 1997-01-16 2002-06-10 東京エレクトロン株式会社 レジスト塗布現像処理装置およびレジスト処理方法
JPH10208997A (ja) 1997-01-16 1998-08-07 Fujitsu Ltd レジスト膜のパターン形成方法及びパターン形成装置
US6057084A (en) 1997-10-03 2000-05-02 Fusion Systems Corporation Controlled amine poisoning for reduced shrinkage of features formed in photoresist
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
JP2001133959A (ja) * 1999-11-08 2001-05-18 Nikon Corp マスク基板、パターン保護材、マスク保護装置及びマスク、並びに露光装置及びデバイス製造方法
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2005277268A (ja) * 2004-03-26 2005-10-06 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
US7465680B2 (en) * 2005-09-07 2008-12-16 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP2009294439A (ja) * 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
JP4930495B2 (ja) 2008-12-04 2012-05-16 東京エレクトロン株式会社 基板加熱装置及び基板加熱方法
JP2010208997A (ja) * 2009-03-11 2010-09-24 Okayama Univ 置換ジフェニルメタン酸誘導体を含有する医薬組成物
JP5655895B2 (ja) 2013-06-05 2015-01-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6411967B2 (ja) 2015-07-29 2018-10-24 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
EP4273625A3 (en) 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
JP2017173420A (ja) 2016-03-22 2017-09-28 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP6781031B2 (ja) 2016-12-08 2020-11-04 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP6767257B2 (ja) 2016-12-22 2020-10-14 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6882091B2 (ja) * 2017-06-21 2021-06-02 キヤノン株式会社 露光装置及び物品の製造方法
JP2019145714A (ja) * 2018-02-22 2019-08-29 東芝メモリ株式会社 パターン形成方法
KR102750860B1 (ko) 2018-08-30 2025-01-09 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Also Published As

Publication number Publication date
JP7456491B2 (ja) 2024-03-27
US12298668B2 (en) 2025-05-13
US12572077B2 (en) 2026-03-10
CN115280470A (zh) 2022-11-01
WO2021193202A1 (ja) 2021-09-30
KR102902149B1 (ko) 2025-12-19
JPWO2021193202A1 (https=) 2021-09-30
US20230176484A1 (en) 2023-06-08
JP2024073500A (ja) 2024-05-29
TWI885087B (zh) 2025-06-01
CN115280470B (zh) 2025-03-18
KR20220157990A (ko) 2022-11-29
CN120178619A (zh) 2025-06-20
TW202147454A (zh) 2021-12-16
US20250180996A1 (en) 2025-06-05
KR20250024133A (ko) 2025-02-18

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