KR102902149B1 - 열처리 장치 및 열처리 방법 - Google Patents

열처리 장치 및 열처리 방법

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Publication number
KR102902149B1
KR102902149B1 KR1020227035485A KR20227035485A KR102902149B1 KR 102902149 B1 KR102902149 B1 KR 102902149B1 KR 1020227035485 A KR1020227035485 A KR 1020227035485A KR 20227035485 A KR20227035485 A KR 20227035485A KR 102902149 B1 KR102902149 B1 KR 102902149B1
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KR
South Korea
Prior art keywords
gas
substrate
heat treatment
gas supply
supply unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227035485A
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English (en)
Korean (ko)
Other versions
KR20220157990A (ko
Inventor
신이치로 가와카미
요헤이 사노
도모야 오니츠카
Original Assignee
도쿄엘렉트론가부시키가이샤
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Priority to KR1020257004442A priority Critical patent/KR20250024133A/ko
Publication of KR20220157990A publication Critical patent/KR20220157990A/ko
Application granted granted Critical
Publication of KR102902149B1 publication Critical patent/KR102902149B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H01L21/0273—
    • H01L21/67103—
    • H01L21/68742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
KR1020227035485A 2020-03-24 2021-03-15 열처리 장치 및 열처리 방법 Active KR102902149B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257004442A KR20250024133A (ko) 2020-03-24 2021-03-15 열처리 장치 및 열처리 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020053305 2020-03-24
JPJP-P-2020-053305 2020-03-24
PCT/JP2021/010419 WO2021193202A1 (ja) 2020-03-24 2021-03-15 熱処理装置及び熱処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257004442A Division KR20250024133A (ko) 2020-03-24 2021-03-15 열처리 장치 및 열처리 방법

Publications (2)

Publication Number Publication Date
KR20220157990A KR20220157990A (ko) 2022-11-29
KR102902149B1 true KR102902149B1 (ko) 2025-12-19

Family

ID=77892121

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227035485A Active KR102902149B1 (ko) 2020-03-24 2021-03-15 열처리 장치 및 열처리 방법
KR1020257004442A Pending KR20250024133A (ko) 2020-03-24 2021-03-15 열처리 장치 및 열처리 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257004442A Pending KR20250024133A (ko) 2020-03-24 2021-03-15 열처리 장치 및 열처리 방법

Country Status (6)

Country Link
US (2) US12298668B2 (https=)
JP (1) JP7456491B2 (https=)
KR (2) KR102902149B1 (https=)
CN (2) CN115280470B (https=)
TW (2) TW202534798A (https=)
WO (1) WO2021193202A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023177658A (ja) * 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
KR102765522B1 (ko) * 2022-12-22 2025-02-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP2009294439A (ja) * 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
JP2010135569A (ja) 2008-12-04 2010-06-17 Tokyo Electron Ltd 基板加熱装置及び基板加熱方法
JP2013179354A (ja) 2013-06-05 2013-09-09 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2017032658A (ja) 2015-07-29 2017-02-09 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
JP2018107192A (ja) 2016-12-22 2018-07-05 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2019500490A (ja) 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成

Family Cites Families (15)

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JP3290943B2 (ja) 1997-01-16 2002-06-10 東京エレクトロン株式会社 レジスト塗布現像処理装置およびレジスト処理方法
JPH10208997A (ja) 1997-01-16 1998-08-07 Fujitsu Ltd レジスト膜のパターン形成方法及びパターン形成装置
US6057084A (en) 1997-10-03 2000-05-02 Fusion Systems Corporation Controlled amine poisoning for reduced shrinkage of features formed in photoresist
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
JP2001133959A (ja) * 1999-11-08 2001-05-18 Nikon Corp マスク基板、パターン保護材、マスク保護装置及びマスク、並びに露光装置及びデバイス製造方法
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2005277268A (ja) * 2004-03-26 2005-10-06 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
US7465680B2 (en) * 2005-09-07 2008-12-16 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
JP2010208997A (ja) * 2009-03-11 2010-09-24 Okayama Univ 置換ジフェニルメタン酸誘導体を含有する医薬組成物
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP2017173420A (ja) 2016-03-22 2017-09-28 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP6781031B2 (ja) 2016-12-08 2020-11-04 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP6882091B2 (ja) * 2017-06-21 2021-06-02 キヤノン株式会社 露光装置及び物品の製造方法
JP2019145714A (ja) * 2018-02-22 2019-08-29 東芝メモリ株式会社 パターン形成方法
KR102750860B1 (ko) 2018-08-30 2025-01-09 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP2009294439A (ja) * 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
JP2010135569A (ja) 2008-12-04 2010-06-17 Tokyo Electron Ltd 基板加熱装置及び基板加熱方法
JP2013179354A (ja) 2013-06-05 2013-09-09 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2017032658A (ja) 2015-07-29 2017-02-09 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
JP2019500490A (ja) 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
JP2018107192A (ja) 2016-12-22 2018-07-05 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
JP7456491B2 (ja) 2024-03-27
US12298668B2 (en) 2025-05-13
US12572077B2 (en) 2026-03-10
CN115280470A (zh) 2022-11-01
TW202534798A (zh) 2025-09-01
WO2021193202A1 (ja) 2021-09-30
JPWO2021193202A1 (https=) 2021-09-30
US20230176484A1 (en) 2023-06-08
JP2024073500A (ja) 2024-05-29
TWI885087B (zh) 2025-06-01
CN115280470B (zh) 2025-03-18
KR20220157990A (ko) 2022-11-29
CN120178619A (zh) 2025-06-20
TW202147454A (zh) 2021-12-16
US20250180996A1 (en) 2025-06-05
KR20250024133A (ko) 2025-02-18

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