CN115207192A - 发光装置、其制造方法及显示模组 - Google Patents

发光装置、其制造方法及显示模组 Download PDF

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CN115207192A
CN115207192A CN202210747725.1A CN202210747725A CN115207192A CN 115207192 A CN115207192 A CN 115207192A CN 202210747725 A CN202210747725 A CN 202210747725A CN 115207192 A CN115207192 A CN 115207192A
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light emitting
light
emitting device
emitting element
conductive
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CN202210747725.1A
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谢明勋
陈効义
邓绍猷
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Epistar Corp
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Epistar Corp
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Abstract

一种发光装置，包含一载板、一发光元件以及一连结结构。载板包含一第一导电区。发光元件包含可发出第一光线的一第一发光层以及形成在该第一发光层的下的一第一接触电极，其中该第一接触电极对应该第一导电区。连结结构包含第一电连结部以及围绕该第一接触电极及该第一电连接部的一保护部，且第一电连结部与该第一导电区及该第一接触电极电性连接。该第一电连结部包含一上部，一底部以及位于该上部及该底部之间的一颈部，其中，该上部的边缘突出于该颈部，且该底部的边缘突出于该上部。

Description

发光装置、其制造方法及显示模组
本申请是中国发明专利申请(申请号：201880084819.7，申请日：2018年06月08日，发明名称：发光装置、其制造方法及显示模组)的分案申请。
技术领域
本发明涉及一种发光装置及其制造方法，尤其是涉及一种包含特定结构的连结结构的发光装置及其制造方法。
背景技术
发光二极管(Light-Emitting Diode；LED)具有低耗电量、低发热量、操作寿命长、耐撞击、体积小以及反应速度快等特性，因此广泛应用于各种需要使用发光元件的领域，例如，车辆、家电、显示屏及照明灯具等。
发光二极管属于一种单色光(monochromatic light)，因此很适合作为显示器中的像素(pixel)。例如可作为户外或户内显示屏的像素。其中，提高显示器的解析度是目前技术发展趋势之一。为了提高解析度，势必要将更多作为像素的LED转移到目标基板上。如此将衍伸出许多的技术问题，例如：LED与基板的电性连结的良率提升是一大挑战。
发明内容
一种发光装置，包含一载板、一发光元件以及一连结结构。载板包含一第一导电区。发光元件包含可发出第一光线的一第一发光层以及形成在该第一发光层之下的一第一接触电极，其中该第一接触电极对应该第一导电区。连结结构包含第一电连结部以及围绕该第一接触电极及该第一电连接部的一保护部，且第一电连结部与该第一导电区及该第一接触电极电性连接。该第一电连结部包含一上部，一底部以及位于该上部及该底部之间的一颈部，其中，该上部的边缘突出于该颈部，且该底部的边缘突出于该上部。
附图说明
图1A为显示根据本发明一实施例所披露的一发光元件的剖面图。
图1B为显示根据本发明另一实施例所披露的一发光元件的剖面图。
图1C为显示根据本发明另一实施例所披露的一发光元件的剖面图。
图2A为显示根据本发明一实施例所披露的一发光单元的剖面图。
图2B为显示根据本发明另一实施例所披露的一发光单元的剖面图。
图2C为显示根据本发明另一实施例所披露的一发光单元的剖面图。
图3A至图3E为显示依据本发明一实施例的发光装置的制造流程图。
图3A至图3D以及图3F至图3J为显示依据本发明另一实施例的发光装置的制造流程图。
图4A至图4E为显示依据本发明另一实施例的发光装置的制造流程图。
图5A至图5D为显示依据本发明一实施例的发光装置的局部结构图。
图6为显示根据本发明一实施例所披露的一发光模组的俯视图。
图7A至图7D为显示根据本发明一实施例所披露的一修补发光模组的制造流程图。
图7A，图7E至图7G为显示根据本发明另一实施例所披露的一修补发光模组的制造流程图。
图8A至图8G为显示根据本发明一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图9A至图9B为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图10A至图10B为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图11A至图11B为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图12为显示根据本发明另一实施例所披露的转移装置的压印头。
图13A及图13B为显示根据本发明一实施例所披露的发光装置中连结结构于固化前后的示意图。
图14A及图14B为显示根据本发明另一实施例所披露的发光装置中连结结构于固化前后的示意图。
图15A至图15D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图15A、图15B、图15E至图15D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图15A、图15B、图15F至图15D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图16A至图16C为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图16D、图16E至图16C为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图17A为显示根据本发明一实施例所披露的一发光元件的底视图。
图17B为显示根据本发明一实施例所披露的覆盖连结结构的一发光元件的底视图。
图17C为显示根据本发明一实施例所披露的覆盖连结结构的一目标基板的底视图。
图18A至图18D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图18A、图18B、图18E至图18F为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图18A、图18G至图18I为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。
图19A及图19B为显示根据图18A至图18D所披露的发光装置中连结结构于固化前后的示意图。
图19C为显示根据图18D例所披露的一发光装置的俯视图。
图19D为显示根据图18F例所披露的一发光装置的俯视图。
附图标记说明：
100a-1、100a-2、300A、300B、400A、400B：发光装置
100A、100A-1、100A-2、100B、100B-1、100B-2、100C、100C-1、100C-2、614a、614b、615a、615b、616a、616b、860：发光元件
120、120A、120B、120C：发光单元
1211A、1211B、1212A、1212B、852：导电垫
122：发光叠层
1221：第一半导体
1222：发光层
1223：第二半导体
123A、322、722：绝缘层
124、1241、1241A、1241B、1241C、1241C-1、1241C-2、1242、1242A、1242B、1242C、1242C-1、1242C-2、862a：接触电极
125C：光阻挡围栏
126A、126B、126C、1532：承载基板
128B、128C：波长转换层
142a、142b、142c、142c-1、142c-2、144a、144b、144c、144c-1、144c-2：凸块
323、324、723、724：导电区
340、340a、340b、440、440a、440b、840、1040、1140、1840-1、1840-2：连结结构
340’、340’a、340’b、440’、440’a、440’b、840’、1140’、1840’-1、1840’-2：胶料
341a、341b、1841-1：树脂
342a、342b、1842-1：导电粒子
343、343a、343b、443、443a、443b：保护部
344、344a、344b、441、442、444、444A、444B、444C、444D、445、1844-1：电连结部
3441a、3441b、4441A：电连结部的上部分
3442a、3442b、4442A：电连结部的下部分
3443a、3443b、4442A：电连结部的颈部
444d：孔洞
600：发光模组
610：第一像素
611a、611b、612a、612b、613a、613b、621a、621b、622a、622b、623a、623b：子像素区块
620：第二像素
614b-1、614b-2：电极
810’、1210’：黏胶
820、1220：压印头
822、1222：柱状体
830、1530：原始基板
850：目标基板
862：被选的发光元件
862b：边界
864：未被选择的发光元件
1200：转移装置
A1、A2、A3、A4、A5、A(C)、A(E)、A(P)、A(S)：面积
E1、E2、E3、E4：能量
R：直径
T1、T2、T3、T4、T5、Y：厚度
W：宽度
h：距离
具体实施方式
图1A为根据本发明一实施例所披露的一发光元件100A的剖面图，图1B为显示根据本发明另一实施例所披露的一发光元件100B的剖面图，以及图1C为显示根据本发明另一实施例所披露的一发光元件100C的剖面图。参阅图1A，发光元件100A包含一发光单元120及凸块142a、144a。在一实施例中，发光单元120包含发光叠层122及接触电极124，接触电极124具有一对接触电极1241、1242，且凸块142a、144a与接触电极1241、1242分别电性连接。
发光叠层122可在提供一外部电力(图未示)后发出一光线。凸块142a、144a可作为发光叠层122与外部电力之间的桥梁且在形成发光装置后可作为连结结构的一部分。在一实施例中，凸块142a直接地形成在接触电极1241之下且凸块142a的形状在靠近接触电极1241的上表面的宽度大于远离接触电极1241的下表面的宽度。在一实施例中，凸块142a的形状由上表面至下表面的宽度渐窄，例如，圆锥状、角锥状。在一实施例中，凸块142a的形状在靠近下表面处具有如针状或管状的结构。在一实施例中，凸块142a的材料为导电材料，例如：金属或导电高分子。在一实施例中，金属包含金、铜、金合金或铜合金。凸块144a与凸块142a的形状或材料可以相同或相似。
参阅图1B，发光元件100B包含一发光单元120及凸块142b、144b。与发光元件100A不同之处在于凸块142b、144b的形状，凸块142b、144b的形状在下表面可以具有一平坦区，例如，截头圆锥状(truncated cone shape)或截头角锥状(truncated pyramid shape)。
参阅图1C，发光元件100C包含一发光单元120及凸块142c、144c。与发光元件100A不同之处在于凸块142c、144c。在一实施例中，凸块142c、144c为一薄膜分别形成在接触电极1241、1242的下表面之下。在一实施例中，凸块142c、144c的厚度T1约1至12微米。在另一实施例中，凸块142c、144c的厚度T1约2至10微米。凸块142c、144c的材料可以是低熔点的金属或低液化熔点(liquidus melting point)的合金。此外，上述金属例如是锡或铟，且上述合金例如是金锡合金。在一实施例中，凸块142c、144c各具有一平坦的底表面，如此在后续与载板接合的工艺中，可以很平稳地放在载板上。
图2A为显示根据本发明一实施例所披露的一发光单元120A的剖面图，图2B为显示根据本发明另一实施例所披露的一发光单元120B的剖面图，以及图2C为显示根据本发明另一实施例所披露的一发光单元120C的剖面图。上述发光单元120可以是发光单元120A、120B或120C其中之一。参阅图2A，发光单元120A包含导电垫1211A、1212A，发光叠层122，绝缘层123A(又称第一绝缘层)，接触电极1241A、1242A以及承载基板126A。具体而言，发光叠层122由下至上依序包含第一半导体1221，发光层1222以及第二半导体1223且位于承载基板126A之下。导电垫1211A、1212A各自与第一半导体1221以及第二半导体1223电性连结。绝缘层123A位于发光叠层122之下且位于两个导电垫1211A、1212A之间。接触电极1241A、1242A各自与导电垫1211A、1212A电性连结。接触电极1241A、1242A相对于导电垫1211A、1212A有更大的底面面积或宽度，如此可更容易与外部的电极(图未示)相连接。
发光单元120A可以是发光二极管晶粒。在一实施例中，发光单元120A为红光发光二极管晶粒，可经由电源提供一电力而发出光线(或称第一光线)，且光线的主波长(dominant wavelength)或峰值波长(peak wavelength)介于600nm至660nm之间。在另一实施例中，发光单元120A为绿光发光二极管晶粒且发出光线(或称第一光线)的主波长(dominant wavelength)或峰值波长(peak wavelength)介于510nm至560nm之间。在另一实施例中，发光单元120A为蓝光发光二极管晶粒且发出光线(或称第一光线)的主波长(dominant wavelength)或峰值波长(peak wavelength)介于430nm至480nm之间。在一实施例中，发光单元120A的承载基板126A为成长基板(growth substrate)，作为发光叠层122外延成长时的基板。作为成长基板的材料，例如：蓝宝石(sapphire)。在另一实施例中，承载基板126A为透明陶瓷基板，透过一结合层(bonding layer，图未示)与发光叠层122连结。透明陶瓷的材料，例如：氧化铝。导电垫1211A、1212A的材料可以包含高导电的金属，例如：铝。接触电极124a、124b的材料可以包含高导电的金属或合金，例如：铝、铜、金或金锡合金。
参阅图2B，发光单元120B包含导电垫1211B、1212B，发光叠层122，接触电极1241B、1242B，承载基板126B以及波长转换层128B。在一实施例中，发光叠层122与接触电极1241B、1242B电性连结。承载基板126B位于发光叠层122之下且环绕接触电极1241B、1242B。在一实施例中，作为发光叠层122外延成长时的成长基板被部分或完全移除，因此承载基板126B并非是成长基板。此外，波长转换层128B位于发光叠层122之上。在一实施例中，波长转换层128B还覆盖承载基板126B一部分的表面。
在一实施例中，发光单元120B中，接触电极1241B、1242B的形状为柱状。承载基板126B的材料可以是树脂，例如：环氧树脂。在一实施例中，波长转换层128B包含一黏合剂(图未示，第一黏合剂)以及多个分散于黏合剂中的波长转换粒子(图未示)，其中波长转换粒子可吸收发光叠层122发出的第一光线，并将其部分或全部转换成与第一光线波长或频谱相异的第二光线。在一实施例中，波长转换粒子吸收第一光线，例如：蓝光或UV光，后并完全转换成第二光线，绿光，其主波长或峰值波长介于510nm至560nm之间。另一实施例中，波长转换粒子吸收第一光线，例如：蓝光或UV光，后并完全转换成第二光线，红光，其主波长或峰值波长介于600nm至660nm之间。波长转换粒子的材料可包含无机的荧光粉(phosphor)、有机分子荧光色素(organic fluorescent colorant)、半导体材料(semiconductor)、或上述材料的组合。半导体材料包含纳米尺寸结晶体(nano crystal)的半导体材料，例如量子点(quantum-dot)发光材料。
参阅图2C，发光单元120C包含发光叠层122，接触电极1241C、1242C，光阻挡围栏125C，承载基板126C以及波长转换层128C。在一实施例中，发光叠层122与接触电极1241C、1242C电性连结，承载基板126C位于发光叠层122之上，波长转换层128C位于承载基板126C之上，且光阻挡围栏125C环绕发光叠层122，承载基板126C以及波长转换层128C的侧壁。光阻挡围栏125C可避免发光叠层122发出的第一光线及/或波长转换层128C发出的第二光线从发光单元120C的侧边射出造成多个发光单元之间串扰(crosstalk)的问题。
光阻挡围栏125C可包含黏合剂(图未示，第二黏合剂)以及多个分散于黏合剂中的吸光粒子或光反射粒子。吸光粒子的材料可以是碳黑。光反射粒子的材料可以是氧化钛(titanium oxide)、氧化锌、氧化铝、硫酸钡或碳酸钙。
图3A至图3E为显示依据本发明一实施例的发光装置300A的制造流程图。参照图3A，提供一载板。该载板包含一绝缘层322(又称第二绝缘层)以及多个导电区323、324。在一实施例中，导电区323、324形成在绝缘层322之上。在一实施例中，每个导电区323、324各有一对，以分别对应发光单元120的接触电极1241、1242。此外，导电区323、324之间彼此可以是电性分离的或电性连接。
绝缘层322的材料可以是环氧树脂、BT(Bismaleimide Triazine)树脂、聚酰亚胺(polyimide)树脂、环氧树脂与玻纤的复合材料或BT树脂与玻纤的复合材料。导电区323、324的材料可以是金属，例如：铜、锡、铝、银或金。在一实施例中，当发光装置300A在显示装置作为像素时，绝缘层322的表面可以形成一层吸光层(图未示)，例如，黑色涂层，可增加对比度。
参照图3B，将含有树脂341a、341b及导电粒子342a、342b的胶料340’a、340’b分别地形成在导电区323、324之上及周遭。在一实施例中，形成胶料340’a、340’b的方式是透过图形化治具，其中，图形化治具例如是钢版(stencil)或网版。
在一实施例中，多个导电粒子342a分散在树脂341a中。可理解地，多个导电粒子342b分散在树脂341b中。树脂341a、341b的材料包含热固化高分子以及助焊剂。热固性高分子可以是环氧树脂。导电粒子342a、342b的材料可以是金、银、铜或锡合金。在一实施例中，导电粒子的材料是低熔点的金属或低液化熔点(liquidus melting point)的合金。在一实施例中，低熔点的金属或低液化熔点的合金的熔点或液化温度低于210℃。在另一实施例中，低熔点的金属或低液化熔点的合金的熔点或液化温度低于170℃。低液化熔点的合金的材料可以是锡铟合金或锡铋合金。
参照图3C，固化胶料340’a、340’b中的树脂341a、341b以形成连结结构340a、340b中的保护部343a、343b。与此步骤中，导电粒子342a、342b熔融后形成连结结构340a、340b中电连结部的下部分3442a、3442b。固化的方式可以是加热。在一实施例中，在固化阶段，树脂341a、341b的黏度会先下降再上升，且导电粒子342a、342b会聚集在导电区323、324周遭。导电粒子342a、342b在聚集中同时会经过熔融态。在一实施例中，固化温度在140℃以上。
参照图3D，提供发光元件100A-1。在一实施例中，一个发光元件100A-1对应一个导电区323以及一个连结结构340a。在另一实施例中，可将多个发光元件100A-1、100A-2同时对应多个导电区323、324以及连结结构340a、340b。
参照图3E，将发光元件100A-1的凸块142a、144a透过电连结部的下部分3442a与导电区323电性连接以构成发光装置300A。在一实施例中，发光元件100A-1的凸块142a、144a被外力提供一个向下的力量，穿入保护部343a直到接触电连结部的下部分3442a。此时，凸块142a、144a作为连结结构340a中电连结部的上部分3441a。此外，电连结部的上部分3441a与电连结部的下部分3442a之间形成一颈部结构3443a。在一实施例中，电连结部的上部分3441a与电连结部的下部分3442a的材料组成不同，例如：电连结部的上部分3441a含有铜元素且电连结部的下部分3442a含有锡元素。相似地，发光元件100A-2的凸块142a、144a透过电连结部的下部分3442b与导电区324电性连接以构成另一发光装置。在一实施例中，发光元件100A-1与发光元件100A-2是被分别地形成单一个发光装置。在另一实施例中，发光元件100A-1与发光元件100A-2可被同时地形成多个发光装置。在一实施例中，绝缘层322可在后续步骤中被切割，如此，发光装置300A与另一发光装置彼此物理性分离。在另一实施例中，绝缘层322不需被切割，如此，发光装置300A与另一发光装置是共用绝缘层322。
图3A至图3C以及图3F至图3J为显示依据本发明另一实施例的发光装置300B的制造流程图。在图3C，形成连结结构340a、340b中的保护部343a、343b以及电连结部的下部分3442a、3442b的步骤之后，接着图3F至第3H，透过一治具将连结结构340a、340b形成多个凹陷部347a、347b。在一实施例中，参照图3F，提供一具有多个凸部的治具360，凸部的形状例如是尖状。治具360的各个凸部分别对准连结结构340a、340b的电连结部的下部分3442a、3442b。参照图3G，将治具360中的多个凸部穿入保护部343a直到接触电连结部的下部分3442a、3442b。参照图3H，将治具360向上与连结结构340a、340b分离以形成多个凹陷部347a、347b。多个凹陷部347a、347b分别对应导电区323、324以及电连结部的下部分3442a、3442b。参照图3I，将发光元件100B-1、100B-2的凸块142b、144b分别对准电连结部的下部分3442a与导电区323。参照图3J，将发光元件100B-1的凸块142b、144b透过电连结部的下部分3442a与导电区323电性连接以构成发光装置300B。相似地，发光元件100B-2的凸块142a、144a透过电连结部的下部分3442b与导电区324电性连接以构成另一发光装置。在一实施例中，发光元件100B-1与发光元件100B-2被同时地形成多个发光装置。在另一实施例中，发光元件100B-1与发光元件100B-2可被分别地形成单一个发光装置。
图4A至图4E为显示依据本发明另一实施例的发光装置400A的制造流程图。参照图4A，提供一载板。该载板包含一绝缘层322以及多个导电区323、324。绝缘层322以及多个导电区323、324的结构、作用及材料可以参考图3A相应的段落。
参照图4B，将胶料440’a、440’b分别地形成在导电区323、324之上及周遭。在一实施例中，形成胶料440’a、440’b的方式是透过图形化治具，其中，图形化治具例如是钢版(stencil)或网版。在一实施例中，胶料440’a、440’b包含树脂。树脂的材料包含热固化高分子以及助焊剂。热固性高分子可以是环氧树脂。在另一实施例中，胶料440’a、440’b包含树脂以及分散在树脂中的光反射粒子。光反射粒子的材料可以是氧化钛(titanium oxide)、氧化锌、氧化铝、硫酸钡或碳酸钙。
参照图4C，提供发光元件100C-1、100C-2。将发光元件100C-1的凸块142c-1、144c-1对准导电区323以及发光元件100C-2的凸块142c-2、144c-2对准导电区324。参照图4D，将发光元件100C-1的凸块142c-1、144c-1穿入胶料440’a并接触导电区323。相似地，发光元件100C-2的凸块142c-2、144c-2穿入胶料440’b并接触导电区324。
参照图4E，熔融凸块142c-1、144c-1、142c-2、144c-2。因此，凸块142c-1、144c-1与导电区323接合以形成连结结构440a、440b中的电连结部441、442。相似地，凸块142c-2、144c-2与导电区324接合以形成电连结部444、445。在此步骤，除了熔融凸块142c-1、144c-1、142c-2、144c-2外，还固化胶料440’a、440’b以形成连结结构440a、440b中的保护部443a、443b。在熔融发光元件100C-1的凸块142c-1、144c-1以及固化胶料440’a后以形成发光装置400A。相似地，发光元件100C-2的凸块142c-2、144c-2在熔融后以及胶料440’b在固化后以形成另一发光装置400B。在一实施例中，连结结构440a、440b还包含光反射粒子(图未示)，光反射粒子分别地分散在保护部443a、443b内。如此，可增加连结结构440a、440b对发光元件100C-1、100C-2发出的光的反射率。
参照图5A，在一实施例中，发光装置400B中连结结构440b的局部结构图。发光元件100C-2的接触电极1241C-2与绝缘层322的上的导电区324之间具有电连结部444A。在一实施例中，电连结部444A包含上部分4441A、颈部4443A以及下部分4442A。颈部4443A位于上部分4441A以及下部分4442A之间。在一实施例中，电连结部的上部分4441A与电连结部的下部分4442A的材料组成相同，例如：两者皆含有锡元素。在一实施例中，颈部4443A的宽度小于上部分4441A的宽度。在一实施例中，上部分4441A的宽度小于下部分4442A的宽度。在一实施例中，电连结部444的厚度T2小于5微米。在另一实施例中，电连结部444的厚度T2大于3微米。在另一实施例中，电连结部444的厚度T2介于1微米至4微米之间。在一实施例中，上部分4441A的底表面至少有一部分大致上为平面。在一实施例中，接触电极1241C-2的底表面至上部分4441A的底表面的平面之间的距离小于1微米。在另一实施例中，接触电极1241C-2的底表面至上部分4441A的底表面的平面之间的距离小于0.5微米。在一实施例中，保护部443a围绕电连结部444A。在一实施例中，保护部443a包覆接触电极1241C-2、电连结部444A以及导电区324。保护部443a可保护接触电极1241C-2、电连结部444A及/或导电区324，如此可阻挡环境中水气或氧气与接触电极1241C-2、电连结部444A及/或导电区324的接触。此外，保护部443a可避免电连结部444A在高温环境下因为软化或熔融造成短路的问题。
参照图5A，在一实施例中，上部分4441A、颈部4443A以及下部分4442A皆包含金元素。在一实施例中，上部分4441A、颈部4443A以及下部分4442A皆包含金元素及锡元素。在一实施例中，位于接触电极1241C-2以及上部分4441A的面积A1的金元素的强度大于导电区324以及下部分4442A的面积A2的金元素的强度。如此表示，接触电极1241C-2以及上部分4441A的面积A1的金元素的原子百分比大于下部分4442A的面积A2的金元素的原子百分比。上述的元素的分析可透过能量色散X-射线光谱(Energy-dispersive X-rayspectroscopy,EDX)。
参照图5B，在另一实施例中，发光装置400B中连结结构440b的局部结构图。与图5A不同之处，连结结构440b的电连结部444B没有颈部结构。在一实施例中，电连结部444B的宽度由接触电极1241C-2往导电区324的方向渐宽。在一实施例中，电连结部444的厚度T2小于3微米。电连结部444的厚度T3介于1微米至3微米之间。
参照图5C，在另一实施例中，发光装置400B中连结结构440b的局部结构图。与图5A不同之处，电连结部444C两个边缘的厚度不同，具有厚度T4及T5。此外，厚度T4小于厚度T5。厚度T5对应的结构与图5A相似，具有颈部结构。厚度T4对应的结构与图5B相似，没有颈部结构。
参照图5D，在另一实施例中，发光装置400B中连结结构440b的局部结构图。电连结部444D的内部具有孔洞444d。电连结部444D可以包含单一个或多个孔洞444d。孔洞444d的形状可以是规则或不规则。规则的形状可以是圆形、椭圆形或多角形。
图6为显示根据本发明一实施例所披露的一发光模组600的俯视图。在一实施例中，发光模组600包含第一像素610以及第二像素620。可理解的，像素的数目视发光模组600所需而定，这里仅是表示发光模组600中的两个像素。第一像素610包含6个子像素区块611a、611b、612a、612b、613a、613b。子像素区块611a、611b、612a、612b、613a、613b可分别提供发光元件614a、614b、615a、615b、616a、616b形成在区块中。发光元件614a、614b、615a、615b、616a、616b的结构可以是上述发光元件100A、发光元件100B、发光元件100C或其组合，或是任何适当的发光元件。子像素区块611a以及子像素区块611b为一组。子像素区块612a以及子像素区块612b为一组。以及子像素区块612a以及子像素区块612b为一组。两个子像素区块为一组可提供备用(backup)的功能，当一个子像素区块在测试时不能运作或性能无法达到需求，例如：亮度不足或色点偏移，在后续修补时可提供另一个子像素区块给另一个发光元件。因此，并非是所有子像素区块611a、611b、612a、612b、613a、613b内皆有发光元件614a、614b、615a、615b、616a、616b。在一实施例中，一开始仅有发光元件614a、615a、616a分别在子像素区块611a、612a、613a内。当测试结果发光元件614a、615a、616a皆为正常，则子像素区块611b、612b、613b内不会再放置发光元件614b、615b、616b。若发光元件614a异常，则发光元件614a将会不导通，以发光元件614b取代。发光元件615a、616a也是相似于发光元件614a的状况。相似地，第二像素620包含6个子像素区块621a、621b、622a、622b、623a、623b。子像素区块621a、621b、622a、622b、623a、623b可分别提供发光元件624a、624b、625a、625b、626a、626b形成在区块中。第二像素620中的子像素区块以及发光元件与第一像素610的作用大致相同。
图7A至图7D为显示根据本发明一实施例所披露的一修补发光模组的制造流程图。参照图7A，提供一载板。该载板包含一绝缘层722(第二绝缘层)以及多个导电区723、724。绝缘层722以及多个导电区723、724的结构、作用及材料可以参考图3A相应的段落。载板的导电区724上形成发光元件614a。在一实施例中，发光元件614a与导电区724电性连结，电性连结的方式是透过一般焊接742(solder)。在其他实施例中，电性连结的方式是透过图3A至图4E上述段落中任一个实施例的方式。此时，导电区723是被露出。当测试发光元件614a后，认为发光元件614a为异常。参照图7B，将含有树脂341及导电粒子342的胶料340’形成在导电区323之上及周遭。树脂341、导电粒子342以及胶料340’的结构、作用及材料可以参考图3B相应的段落。
参照图7C，提供发光元件614b，并将发光元件614b的电极614b-1、614b-2对准导电区723。发光元件614b的电极614b-1、614b-2可以是一般的金属垫，一般的凸块或是图1A至图1C的任一种凸块。参照图7D，发光元件614b放置到导电区723之上并熔融导电粒子342后形成连结结构340。与此步骤中，胶料340’中的树脂341被固化以形成连结结构340中的保护部343。此步骤的树脂341、导电粒子342以及胶料340’的变化描述可参考图3C相应的段落。
图7A，图7E至图7G为显示根据本发明另一实施例所披露的一修补发光模组的制造流程图。图7A之后，接着图7E，将胶料440’分别地形成在导电区723之上及周遭。胶料440’的形成方式、作用及材料可以参考图4B相应的段落。
参照图7F，提供发光元件100C，并将发光元件100C的凸块142c、144c对准导电区723。发光元件100C的凸块142c、144c可参阅图1C相应的段落。参照图7G，熔融凸块142c、144c。因此，凸块142c、144c与导电区723接合以形成连结结构440中的电连结部441、442。在此步骤，除了熔融凸块142c、144c外，还固化胶料440’以形成连结结构440中的保护部443。
图8A至图8G为显示根据本发明一实施例所披露的多个发光元件转移至目标基板的制造流程图。参照图8A，提供一转移装置。在一实施例中，转移装置具有压印头820，且压印头820包含多个柱状体822。在一实施例中，多个柱状体822彼此间隔相同的距离。在另一实施例中，多个柱状体822彼此间隔的距离可以不相同。此外，多个柱状体822的底部各自地存在黏胶810’。在一实施例中，黏胶810’的材料为热解材料(thermal release material)。热解材料的特性是加热后改变材料的黏性。在一实施例中，热解材料是加热后黏性降低的热解胶(thermal release tape)。黏性降低可以是指加热后的黏着力(adhesivestrength)小于加热前的二十分之一。
参照图8B，提供一原始基板830，且原始基板830上包含多个发光元件860。原始基板830可作为发光元件860承载用。在一实施例中，原始基板830的材料可以是塑胶、玻璃或蓝宝石。在一实施例中，发光元件860包含半导体材料。多个发光元件860的结构可以是上述发光元件100A、发光元件100B、发光元件100C或其组合，或是任何适当的发光元件。多个发光元件860包含两个组，一个组为被选的发光元件862，另一个组则是未被选择的发光元件864。在一实施例中，被选的发光元件862之间穿插了未被选择的发光元件864。穿插的数目视需要可调整，例如：1、2或3个。穿插的数目可以是固定或是变化的。多个柱状体822对应被选的发光元件862。在一实施例中，黏胶810’接触被选的发光元件862。
参照图8C，被选的发光元件862与原始基板830分离。在一实施例中，透过多个柱状体822的黏胶810’的接合力大于被选的发光元件862与原始基板830之间的接合力，如此多个柱状体822将被选的发光元件862抓取上来。
参照图8D，提供一目标基板850，目标基板850的上表面具有多个导电垫852，导电垫852之上及周遭形成胶料(或称自组胶)840’，并将压印头820上被选的发光元件862对应导电垫852。目标基板850可以是电路基板。胶料(或称自组胶)840’的结构、作用及材料可以参考图3B及图7B相应的段落。
参照图8E，将被选的发光元件862与导电垫852上的胶料840’接触。在一实施例中，发光元件862被施予一下压的力量使得发光元件862上的接触电极(图未示)与导电垫852接触或非常接近。此时，发光元件862的底部至少一部分被胶料840’所覆盖。
参照图8F，被选的发光元件862被放置到导电垫852的上并提供能量E1以熔融胶料840’中的导电粒子(图未示)以及固化胶料840’中的树脂(图未示)以形成已固化胶层(或称连结结构)840。此步骤的树脂、导电粒子以及胶料840’的变化描述可参考图3C相应的段落。在一实施例中，能量E1为热，透过加热使导电粒子熔融，树脂固化，并使得黏胶810’的黏性降低形成黏胶810。如此，已固化胶层(或称连结结构)840对发光元件862的接合力大于黏胶810。
参照图8G，被选的发光元件862形成在目标基板850上且与转移装置分离。由于上一步骤中，已固化胶层840对发光元件862接合力大于黏胶810对发光元件862的接合力，因此，当转移装置的压印头820向上移动时，被选的发光元件862就会被固定在目标基板850上且与转移装置的压印头820分离。此步骤中，发光元件862也与目标基板850的导电垫852电性连结。
图9A至图9B为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。图9A之前的步骤可参考图8A至图8E相应的段落。在此实施例中，黏胶810’为光解离材料。光解离材料或光固化材料的特性是照光后改变材料的黏性。在一实施例中，光解离材料是在照射紫外光后黏性降低的紫外光解离胶(UV release tape)。参照图9A，被选的发光元件862被放置到导电垫852之上并提供能量E1以熔融胶料840’中的导电粒子(图未示)以及固化胶料840’中的树脂(图未示)后形成已固化胶层(或称连结结构)840。此外，提供能量E2到黏胶810’，将黏胶810’转变成黏度较低的黏胶810。在一实施例中，能量E1为热能，能量E2为紫外光，且黏胶810’为紫外光解离胶。此步骤的胶料840’的变化描述可参考图3C相应的段落。
参照图9B，被选的发光元件862形成在目标基板850上且与转移装置分离。该步骤可以参考图8G相应的段落。
图10A至图10B为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。图10A之前的步骤可参考图8A至图8E相应的段落。在此实施例中，黏胶810’为热解材料，导电垫852之上形成的是焊料。在一实施例中，导电垫852之上形成的是具有共晶(eutectic)特性的焊料。参照图10A，被选的发光元件862被放置到导电垫852之上并提供能量E1以熔融焊料后形成连结结构1040。此外，同时提供一能量E3使得发光元件862与导电垫852可紧密的接触。在一实施例中，能量E1为热能，能量E3为压力。
参照图10B，在被选的发光元件862下形成连结结构1040后，被选的发光元件862形成在目标基板850上且与转移装置分离。该步骤可以参考图8G相应的段落。
图11A至图11B为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。图10A之前的步骤可参考图8A至图8E相应的段落。在此实施例中，黏胶810’为热解材料，导电垫852之上形成的胶料1140’是异方性导电胶(AnisotropicConductive Paste；ACP)。参照图11A，被选的发光元件862被放置到导电垫852之上并提供能量E1以固化胶料1140’中的树脂(图未示)后形成已固化胶层(或称连结结构)1140。此外，同时提供一能量E3使得发光元件862与导电垫852可紧密的相邻，并透过胶料1140’中的导电粒子电性连接发光元件862与导电垫852。在一实施例中，能量E1为热能，能量E3为压力。
参照图11B，在被选的发光元件862下形成连结结构1140后，被选的发光元件862形成在目标基板850上且与转移装置分离。该步骤可以参考图8G相应的段落。
图12为显示根据本发明另一实施例所披露的转移装置1200的压印头1220。转移装置1200中的压印头1220具有多个柱状体1222，柱状体1222的结构由断面图观之，柱状体1222的底部的宽度大于柱状体1222的上部的宽度。柱状体1222之间形成凹槽，凹槽由内向外的宽度渐窄，如此当部分的黏胶1210’被填到凹槽内时，可增加转移装置1200对黏胶1210’的抓取力避免黏胶1210’从转移装置1200脱落。转移装置1200可用于上述图8A至图11B中任何实施例或是任何适合转移发光元件的实施例。
图13A及图13B为显示根据本发明一实施例所披露的发光装置中连结结构于固化前后的示意图。参照图13A，目标基板850的上表面具有多个导电垫852，于固化前，导电垫852之上及周遭形成胶料(或称自组胶)340’，且发光元件862形成在导电垫852之上并部分埋入胶料340’中。详言之，胶料340’包含树脂341及分散于树脂中341的导电粒子342。导电垫852之上至发光元件862之下具有接合区1301，导电垫852之间以及发光元件862之间则具有非接合区1302。胶料340’、树脂341以及导电粒子342的结构、作用及材料可以参考图3B相应的段落。
参照图13B，固化后，连结结构340被形成，导电粒子342在熔融后并聚集在接合区1301内及周遭成为电连结部344。此外，树脂341固化后成为保护部343。在一实施例中，少部分的导电粒子342分散在非接合区1302中。在非接合区1302内的导电粒子342至少部分彼此是分离的因此不会产生短路的问题。
图14A及图14B为显示根据本发明另一实施例所披露的发光装置中连结结构于固化前后的示意图。固化前，参照图14A，与图13A不同之处，树脂341是分别形成在两个发光元件862之下及周遭，但彼此是分开的。相似地，非接合区1402具有两区，分别对一个发光元件862，非接合区1402的这两区彼此是分离的。接合区1401的部分与图13A相同。固化后，参照图14B，连结结构340、保护部343以及电连结部344的结构、作用及材料可以参考图13B相应的段落。
图15A至图15D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。参照图15A，提供一原始基板1530，且原始基板1530上包含多个发光元件860。此外，提供一目标基板850，目标基板850的上表面具有多个导电垫852。在一实施例中，原始基板1530包含承载基板1532及可离型胶1534。可离型胶1534将多个发光元件860暂时地固定在承载基板1532上。多个发光元件860包含两个组，一个组为被选的发光元件862，另一个组则是未被选择的发光元件864。在一实施例中，被选的发光元件862各包含两个接触电极862a。原始基板1530、发光元件860、被选的发光元件862、未被选择的发光元件864、目标基板850以及导电垫852的结构、作用及材料可以参考图8B及图8D相应的段落。
参照图15B，将胶料340’分别地形成在导电垫852之上及周遭，并将被选的发光元件862对准具有胶料340’的导电垫852。胶料340’的结构、作用及材料可以参考图3B相应的段落。
参照图15C，被选的发光元件862被放置到导电垫852之上并提供能量E1以熔融胶料340’中的导电粒子(图未示)以及固化胶料340’中的树脂(图未示)。此步骤的能量E1、树脂、导电粒子以及胶料340’的相关描述可参考图3C、图8F以及图13A至图14B相应的段落。
参照图15D，被选的发光元件862形成在目标基板850上且与转移装置分离。在经过能量E1后，离型胶1534的黏性降低，且胶料340’转变成连结结构340，并形成保护部343以及电连结部344。连结结构340对被选的发光元件862的接合力大于离型胶1534对被选的发光元件862的接合力。
图15A、图15B、图15E至图15D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。在图15B之后，接着图15E。图15E与图15C不同之处在于提供能量E1的位置也可从原始基板1530的地方提供。之后，再接着图15D。
图15A、图15B、图15F至图15D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。在图15B之后，接着图15F。图15F与图15C不同之处在于局部地区提供能量E4。在一实施例中，能量E4为激光因此可在局部地区，例如：接合的地区，提供热量。之后，再接着图15D。
图16A至图16C为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。参照图16A，提供一原始基板1530，且原始基板1530上包含多个发光元件860。此外，多个发光元件860的下表面被胶料340’所覆盖。再者，提供一目标基板850，目标基板850的上表面具有多个导电垫852。原始基板1530、发光元件860、目标基板850以及导电垫852的结构、作用及材料可以参考图8B、图8D及图15A相应的段落。
参照图16B，被选的发光元件862被放置到导电垫852之上并提供能量E1以熔融胶料340’中的导电粒子(图未示)以及固化胶料340’中的树脂(图未示)。此步骤的能量E1、树脂、导电粒子以及胶料340’的相关描述可参考图3C、图8F以及图13A至图14B相应的段落。
参照图16C，被选的发光元件862形成在目标基板850上且与转移装置分离。该步骤的相关描述可参考图15D相应的段落。
图16D、图16E至图16C为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。参照图16D，提供一原始基板1530，且原始基板1530上包含多个发光元件860。此外，多个发光元件860的下表面被胶料340’所覆盖。再者，提供一目标基板850，目标基板850的上表面具有多个导电垫852。原始基板1530、发光元件860、目标基板850以及导电垫852的结构、作用及材料可以参考图8B、图8D及图15A相应的段落。
参照图16E，在于局部地区提供能量E4以熔融胶料340’中的导电粒子(图未示)以及固化胶料340’中的树脂(图未示)。在一实施例中，能量E4为激光。此步骤的能量E4、树脂、导电粒子以及胶料340’的相关描述可参考图3C、图8F、图13A至图14B以及图15F相应的段落。图16E后接续图16C。
图17A为显示根据本发明一实施例所披露的一发光元件的底视图。图17B为显示根据本发明一实施例所披露的覆盖连结结构的一发光元件的底视图。图17C为显示根据本发明一实施例所披露的覆盖连结结构的一目标基板的底视图。图17A至图17C可一并参阅，可以是本发明所揭示的任何实施例中关于发光元件、连结结构以及目标基板之间的关系。
参照图17A，被选的发光元件862的底视图中，包含两个接触电极862a以及边界862b。边界862b所围成的面积为A3。
参照图17B，连结结构340覆盖部分被选的发光元件862的底表面。此外，连结结构340覆盖被选的发光元件862的面积为A4。在一实施例中，面积A4与面积A3的比约在60％至80％之间。若面积A4与面积A3的比大于80％，则连结结构340在未固化阶段时的胶料340’可能会沾黏到邻近未被选择的发光元件864，造成未被选择的发光元件864产生也被转移到目标基板的意外。
参照图17C，连结结构340覆盖部分导电垫852的底表面。连结结构340覆盖被选的导电垫852的面积为A5。在一实施例中，面积A5与面积A3的比约在60％至80％之间。若面积A5与面积A3的比大于80％，则连结结构340在未固化阶段时的胶料340’可能会沾黏到邻近未被选择的发光元件864，造成未被选择的发光元件864也被转移到目标基板的意外。
图18A至图18D为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。参照图18A，与图15A不同之处在于原始基板1530与目标基板850之间存在间隔件1811、1812。在一实施例中，间隔件1811、1812分别在目标基板850上且在目标基板850的边缘处，例如：四个角落。在另一实施例中，间隔件1811、1812可在目标基板850上的其他地区，例如：中间区域。在一实施例中，间隔件1811、1812的形状为球形。在其他实施例中，间隔件1811、1812的形状可以是柱状、长方体或椎状。间隔件1811、1812的数目可视需求调整。图18A其他特征的相关描述可以参考图15A相应的段落。
参照图18B，将胶料1840’-1分别地形成在导电垫852之上及周遭，并将被选的发光元件862对准具有胶料1840’-1的导电垫852。胶料1840’-1的结构、作用及材料可以参考图3B相应的段落。
参照图18C，被选的发光元件862被放置到导电垫852之上并提供能量E1以熔融胶料1840’-1中的导电粒子(图未示)以及固化胶料1840’-1中的树脂(图未示)。原始基板1530与目标基板850之间之间距被间隔件1811、1812的直径R所限制。因此，间隔件1811、1812的导入可以提供原始基板1530与目标基板850之间具有较均一之间距。换言之，被选的发光元件862的厚度Y固定，因此，发光元件862到目标基板850的距离h可被固定，因为R＝Y+h。此步骤的能量E1、树脂、导电粒子以及胶料1840’-1的相关描述可参考图3C、图8F以及图13A至图14B相应的段落。
参照图18D，被选的发光元件862形成在目标基板850上且与转移装置分离。该步骤的相关描述可参考图15D相应的段落。
图18A、图18B、图18E至图18F为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。图18E接续图18B，图18E类似图18C，且图18F类似图18D。参照图18E，在一实施例中，胶料1840’-2形成在导电垫852之上及周遭，且胶料1840’-2的宽度大于发光元件860的宽度W且小于发光元件860的宽度W加上发光元件860之间之间距d。参照图18F，在熔融胶料1840’-2中的导电粒子(图未示)以及固化胶料1840’-2中的树脂(图未示)后，连结结构1840-2的宽度小于发光元件860的宽度W加上发光元件860之间之间距d。如此，可避免在未固化阶段时的胶料1840’-2可能会沾黏到邻近未被选择的发光元件864，造成未被选择的发光元件864也被转移到目标基板的意外。
图18A、图18G至图18I为显示根据本发明另一实施例所披露的多个发光元件转移至目标基板的制造流程图。图18G接续图18A。参照图18G，图18G与图18B不同之处在于胶料1840’-3先被形成在被选择的发光元件862之上。之后，图18H类似图18C，且图18F类似图18D。
图19A及图19B为显示根据图18A至图18D所披露的发光装置中连结结构于固化前后的示意图。图19A显示固化前(低温下)，胶料(或称自组胶)1840’-1形成在导电垫852之上及周遭，且发光元件862的下表面部分埋入胶料1840’-1中。由于没有提供一个下压的力，因此胶料1840’-1仅覆盖发光元件862的下表面，并未覆盖到发光元件862的侧表面。此外，导电粒子1842-1大致上均匀地分散于树脂1841-1内。导电垫852之上至发光元件862之下具有接合区1901，导电垫852之间以及发光元件862之间则具有非接合区1902。导电粒子1842-1在接合区1901以及非接合区1902内的密度大致相同。
图19B显示固化后(高温下)，胶料1840’-1形成连结结构1840-1。相似地，连结结构1840-1仅覆盖发光元件862的下表面，并未覆盖到发光元件862的侧表面。不过，导电粒子1842-1在接合区1901内的密度大于非接合区1902内的密度。
图19C为显示根据图18D例所披露的一发光装置的俯视图。在一实施例中，在目标基板850上，连结结构1840-1的面积A(P)小于发光元件862的面积A(C)。在一实施例中，电连结部1844-1的面积A(S)大于接触电极862a的面积A(E)。
图19D为显示根据图18F例所披露的一发光装置的俯视图。在一实施例中，在目标基板850上，连结结构1840-2的面积A(P)大于发光元件862的面积A(C)。
以上所述的实施例仅为说明本发明的技术思想及特点，其目的在使熟习此项技艺的人士能够了解本发明的内容并据以实施，当不能以的限定本发明的专利范围，即大凡依本发明所揭示的精神所作的等同变化或修饰，仍应涵盖在本发明的专利范围内。
本申请要求于2017年12月16日递交的美国临时申请第62/610,426号以及于2018年2月20日递交的美国临时申请第62/632,732号的优先权，在此全文引用上述美国临时申请的内容以作为本申请的一部分。

Claims (10)

1.一种发光装置，包含：
基板，包含导电区；
第一发光元件，包含下表面、以及第一接触电极与第二接触电极位于该下表面；以及
连结结构，包含第一电连结部、第二电连结部、以及保护部，其中，该第一电连结部连接该第一接触电极与该导电区，该第二电连结部连接该第二接触电极与该导电区，该保护部围绕该第一接触电极、该第二接触电极、该第一电连接部、以及该第二电连结部；
该保护部与该下表面间具有接触面，该接触面的最大宽度小于该第一发光元件的最大宽度。
2.如权利要求1所述的发光装置，其中，该第一发光元件包含最外侧表面，该保护部未覆盖到该最外侧表面。
3.如权利要求1所述的发光装置，其中，于俯视图，该连结结构与该第一发光元件的接触面积小于该发光元件的面积。
4.如权利要求1所述的发光装置，其中，该保护部包含热固性高分子。
5.如权利要求1所述的发光装置，其中，该保护部包含环氧树脂。
6.如权利要求1所述的发光装置，其中，于俯视图，该第一电连结部的面积大于该第一接触电极的面积。
7.如权利要求1所述的发光装置，还包含第二发光元件位于该基板上，该保护部未接触该第二发光元件。
8.如权利要求1所述的发光装置，其中，该第一电连结部包含锡或铟。
9.如权利要求1所述的发光装置，其中，该保护部与该第一接触电极、该第二接触电极、该第一电连接部、该第二电连结部、以及该导电区直接接触。
10.如权利要求1所述的发光装置，其中，该保护部的一部分填入该第一发光元件、该第一电连接部、该第二电连结部、以及该基板之间的空间。
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