CN111542930A - 发光装置、其制造方法及显示模组 - Google Patents

发光装置、其制造方法及显示模组 Download PDF

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Publication number
CN111542930A
CN111542930A CN201880084819.7A CN201880084819A CN111542930A CN 111542930 A CN111542930 A CN 111542930A CN 201880084819 A CN201880084819 A CN 201880084819A CN 111542930 A CN111542930 A CN 111542930A
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light emitting
light
emitting device
conductive
emitting element
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CN201880084819.7A
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CN111542930B (zh
Inventor
谢明勋
陈効义
邓绍猷
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Epistar Corp
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Epistar Corp
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Priority to CN202210747556.1A priority Critical patent/CN115207195A/zh
Priority to CN202310081856.5A priority patent/CN116053391A/zh
Priority to CN202210747725.1A priority patent/CN115207192A/zh
Priority to CN202310081837.2A priority patent/CN116053385A/zh
Publication of CN111542930A publication Critical patent/CN111542930A/zh
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Publication of CN111542930B publication Critical patent/CN111542930B/zh
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    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

一种发光装置，包含一载板、一发光元件以及一连结结构。载板包含一第一导电区。发光元件包含可发出第一光线的一第一发光层以及形成在该第一发光层的下的一第一接触电极，其中该第一接触电极对应该第一导电区。连结结构包含第一电连结部以及围绕该第一接触电极及该第一电连接部的一保护部，且第一电连结部与该第一导电区及该第一接触电极电性连接。该第一电连结部包含一上部，一底部以及位于该上部及该底部之间的一颈部，其中，该上部的边缘突出于该颈部，且该底部的边缘突出于该上部。

Description

PCT国内申请，说明书已公开。

Claims (10)

  1. PCT国内申请，权利要求书已公开。
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KR20200119233A (ko) 2020-10-19
US11641010B2 (en) 2023-05-02
CN115207195A (zh) 2022-10-18
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