TW202310442A - 發光裝置、其製造方法及顯示模組 - Google Patents
發光裝置、其製造方法及顯示模組 Download PDFInfo
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- TW202310442A TW202310442A TW111142157A TW111142157A TW202310442A TW 202310442 A TW202310442 A TW 202310442A TW 111142157 A TW111142157 A TW 111142157A TW 111142157 A TW111142157 A TW 111142157A TW 202310442 A TW202310442 A TW 202310442A
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- light
- light emitting
- emitting element
- glue
- conductive
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Abstract
一種發光裝置,包含一載板、一發光元件以及一連結結構。載板包含一第一導電區。發光元件包含可發出第一光線的一第一發光層以及形成在該第一發光層之下的一第一接觸電極,其中該第一接觸電極對應該第一導電區。連結結構包含第一電連結部以及圍繞該第一接觸電極及該第一電連接部的一保護部,且第一電連結部與該第一導電區及該第一接觸電極電性連接。該第一電連結部包含一上部,一底部以及位於該上部及該底部之間的一頸部,其中,該上部的邊緣突出於該頸部,且該底部之邊緣突出於該上部。
Description
本發明係關於一種發光裝置及其製造方法,尤關於一種包含特定結構之連結結構之發光裝置及其製造方法。
發光二極體(Light-Emitting Diode;LED)具有低耗電量、低發熱量、操作壽命長、耐撞擊、體積小以及反應速度快等特性,因此廣泛應用於各種需要使用發光元件的領域,例如,車輛、家電、顯示屏及照明燈具等。
發光二極體屬於一種單色光(monochromatic light),因此很適合做為顯示器中的像素(pixel)。例如可作為戶外或戶內顯示屏的像素。其中,提高顯示器的解析度是目前技術發展趨勢之一。為了提高解析度,勢必要將更多做為像素的LED轉移到目標基板上。如此將衍伸出許多的技術問題,例如:LED與基板的電性連結的良率提升是一大挑戰。
一種發光裝置,包含一載板、一發光元件以及一連結結構。載板包含一第一導電區。發光元件包含可發出第一光線的一第一發光層以及形成在該第一發光層之下的一第一接觸電極,其中該第一接觸電極對應該第一導電區。連結結構包含第一電連結部以及圍繞該第一接觸電極及該第一電連接部的一保護部,且第一電連結部與該第一導電區及該第一接觸電極電性連接。該第一電連結部包含一上部,一底部以及位於該上部及該底部之間的一頸部,其中,該上部的邊緣突出於該頸部,且該底部之邊緣突出於該上部。
第1A圖為根據本發明一實施例所揭露之一發光元件100A的剖面圖,第1B圖係顯示根據本發明另一實施例所揭露之一發光元件100B的剖面圖,以及第1C圖係顯示根據本發明另一實施例所揭露之一發光元件100C的剖面圖。參閱第1A圖,發光元件100A包含一發光單元120及凸塊142a、144a。在一實施例中,發光單元120包含發光疊層122及接觸電極124,接觸電極124具有一對1241、1242,且凸塊142a、144a與接觸電極1241、1242各別地電性連接。
發光疊層122可在提供一外部電力(圖未示)後發出一光線。凸塊142a、144a可作為發光疊層122與外部電力之間的橋樑且在形成發光裝置後可做為連結結構之一部分。在一實施例中,凸塊142a直接地形成在接觸電極1241之下且凸塊142a的形狀在靠近接觸電極1241的上表面之寬度大於遠離接觸電極1241的下表面之寬度。在一實施例中,凸塊142a的形狀由上表面至下表面的寬度漸窄,例如,圓錐狀、角錐狀。在一實施例中,凸塊142a的形狀在靠近下表面處具有如針狀或管狀的結構。在一實施例中,凸塊142a的材料為導電材料,例如:金屬或導電高分子。在一實施例中,金屬包含金、銅、金合金或銅合金。凸塊144a與凸塊142a的形狀或材料可以相同或相似。
參閱第1B圖,發光元件100B包含一發光單元120及凸塊142b、144b。與發光元件100A不同之處在於凸塊142b、144b的形狀,凸塊142b、144b的形狀在下表面可以具有一平坦區,例如,截頭圓錐狀(truncated cone shape)或截頭角錐狀(truncated pyramid shape)。
參閱第1C圖,發光元件100C包含一發光單元120及凸塊142c、144c。與發光元件100A不同之處在於凸塊142c、144c。在一實施例中,凸塊142c、144c為一薄膜各別形成在接觸電極1241、1242的下表面之下。在一實施例中,凸塊142c、144c的厚度T1約1至12微米。在另一實施例中,凸塊142c、144c的厚度T1約2至10微米。凸塊142c、144c的材料可以是低熔點的金屬或低液化熔點(liquidus melting point )的合金。此外,上述金屬例如是錫或銦,且上述合金例如是金錫合金。在一實施例中,凸塊142c、144c各具有一平坦的底表面,如此在後續與載板接合的製程中,可以很平穩地放在載板上。
第2A圖係顯示根據本發明一實施例所揭露之一發光單元120A的剖面圖,第2B圖係顯示根據本發明另一實施例所揭露之一發光單元120B的剖面圖,以及第2C圖係顯示根據本發明另一實施例所揭露之一發光單元120C的剖面圖。上述發光單元120可以是發光單元120A、120B或120C其中之一。參閱第2A圖,發光單元120A包含導電墊1211A、1212A,發光疊層122,絕緣層123A(又稱第一絕緣層),接觸電極1241A、1242A以及承載基板126A。具體而言,發光疊層122由下至上依序包含第一半導體1221,發光層1222以及第二半導體1223且位於承載基板126A之下。導電墊1211A、1212A各自與第一半導體1221以及第二半導體1223電性連結。絕緣層123A位於發光疊層122之下且位於兩個導電墊1211A、1212A之間。接觸電極1241A、1242A各自與導電墊1211A、1212A電性連結。接觸電極1241A、1242A相對於導電墊1211A、1212A有更大的底面面積或寬度,如此可更容易與外部的電極(圖未示)相連接。
發光單元120A可以是發光二極體晶粒。在一實施例中,發光單元120A為紅光發光二極體晶粒,可經由電源提供一電力而發出光線(或稱第一光線),且光線的主波長(dominant wavelength)或峰值波長(peak wavelength)介於600 nm至660 nm之間。在另一實施例中,發光單元120A為綠光發光二極體晶粒且發出光線(或稱第一光線)的主波長(dominant wavelength)或峰值波長(peak wavelength)介於510 nm至560 nm之間。在另一實施例中,發光單元120A為藍光發光二極體晶粒且發出光線(或稱第一光線)的主波長(dominant wavelength)或峰值波長(peak wavelength)介於430 nm至480 nm之間。在一實施例中,發光單元120A的承載基板126A為成長基板(growth substrate),作為發光疊層122磊晶成長時之基板。作為成長基板的材料,例如:藍寶石(sapphire)。在另一實施例中,承載基板126A為透明陶瓷基板,透過一結合層(bonding layer,圖未示)與發光疊層122連結。透明陶瓷的材料,例如:氧化鋁。導電墊1211A、1212A的材料可以包含高導電的金屬,例如:鋁。接觸電極124a、124b的材料可以包含高導電的金屬或合金,例如:鋁、銅、金或金錫合金。
參閱第2B圖,發光單元120B包含導電墊1211B、1212B,發光疊層122,接觸電極1241B、1242B,承載基板126B以及波長轉換層128B。在一實施例中,發光疊層122與接觸電極1241B、1242B電性連結。承載基板126B位於發光疊層122之下且環繞接觸電極1241B、1242B。在一實施例中,作為發光疊層122磊晶成長時之成長基板被部分或完全移除,因此承載基板126B並非是成長基板。此外,波長轉換層128B位於發光疊層122之上。在一實施例中,波長轉換層128B還覆蓋承載基板126B一部分的表面。
在一實施例中,發光單元120B中,接觸電極1241B、1242B的形狀為柱狀。承載基板126B的材料可以是樹脂,例如:環氧樹脂。在一實施例中,波長轉換層128B包含一黏合劑(圖未示,第一黏合劑)以及多個分散於黏合劑中的波長轉換粒子(圖未示),其中波長轉換粒子可吸收發光疊層122發出的第一光線,並將其部分或全部轉換成與第一光線波長或頻譜相異之第二光線。在一實施例中,波長轉換粒子吸收第一光線,例如:藍光或UV光,後並完全轉換成第二光線,綠光,其主波長或峰值波長介於510 nm至560 nm之間。另一實施例中,波長轉換粒子吸收第一光線,例如:藍光或UV光,後並完全轉換成第二光線,紅光,其主波長或峰值波長介於600 nm至660 nm之間。波長轉換粒子的材料可包含無機的螢光粉(phosphor)、有機分子螢光色素(organic fluorescent colorant)、半導體材料(semiconductor)、或上述材料的組合。半導體材料包含奈米尺寸結晶體(nano crystal)的半導體材料,例如量子點(quantum-dot)發光材料。
參閱第2C圖,發光單元120C包含發光疊層122,接觸電極1241C、1242C,光阻擋圍欄125C,承載基板126C以及波長轉換層128C。在一實施例中,發光疊層122與接觸電極1241C、1242C電性連結,承載基板126C位於發光疊層122之上,波長轉換層128C位於承載基板126C之上,且光阻擋圍欄125C環繞發光疊層122,承載基板126C以及波長轉換層128C的側壁。光阻擋圍欄125C可避免發光疊層122發出的第一光線及/或波長轉換層128C發出的第二光線從發光單元120C的側邊射出造成多個發光單元之間串擾(crosstalk)的問題。
光阻擋圍欄125C可包含黏合劑(圖未示,第二黏合劑)以及多個分散於黏合劑中的吸光粒子或光反射粒子。吸光粒子的材料可以是碳黑。光反射粒子的材料可以是氧化鈦(titanium oxide)、氧化鋅、氧化鋁、硫酸鋇或碳酸鈣。
第3A圖至第3E圖係顯示依據本發明一實施例之發光裝置300A的製造流程圖。參照第3A圖,提供一載板。該載板包含一絕緣層322(又稱第二絕緣層)以及多個導電區323、324。在一實施例中,導電區323、324形成在絕緣層322之上。在一實施例中,每個導電區323、324各有一對,以分別對應發光單元120的接觸電極1241、1242。此外,導電區323、324之間彼此可以是電性分離的或電性連接。
絕緣層322的材料可以是環氧樹脂、BT(Bismaleimide Triazine)樹脂、聚醯亞胺(polyimide)樹脂、環氧樹脂與玻纖的複合材料或BT樹脂與玻纖的複合材料。導電區323、324的材料可以是金屬,例如:銅、錫、鋁、銀或金。在一實施例中,當發光裝置300A在顯示裝置作為像素時,絕緣層322的表面可以形成一層吸光層(圖未示),例如,黑色塗層,可增加對比度。
參照第3B圖,將含有樹脂341a、341b及導電粒子342a、342b的膠料340’a、340’b分別地形成在導電區323、324之上及周遭。在一實施例中,形成膠料340’a、340’b的方式是透過圖形化治具,其中,圖形化治具例如是鋼版(stencil)或網版。
在一實施例中,多個導電粒子342a分散在樹脂341a中。可理解地,多個導電粒子342b分散在樹脂341b中。樹脂341a、341b的材料包含熱固化高分子以及助焊劑。熱固性高分子可以是環氧樹脂。導電粒子342a、342b的材料可以是金、銀、銅或錫合金。在一實施例中,導電粒子的材料是低熔點的金屬或低液化熔點(liquidus melting point )的合金。在一實施例中,低熔點的金屬或低液化熔點的合金的熔點或液化溫度低於210℃。在另一實施例中,低熔點的金屬或低液化熔點的合金的熔點或液化溫度低於170℃。低液化熔點的合金的材料可以是錫銦合金或錫鉍合金。
參照第3C圖,固化膠料340’a、340’b中的樹脂341a、341b以形成連結結構340a、340b中的保護部343a、343b。與此步驟中,導電粒子342a、342b熔融後形成連結結構340a、340b中電連結部的下部分3442a、3442b。固化的方式可以是加熱。在一實施例中,在固化階段,樹脂341a、341b的黏度會先下降再上升,且導電粒子342a、342b會聚集在導電區323、324周遭。導電粒子342a、342b在聚集中同時會經過熔融態。在一實施例中,固化溫度在140℃以上。
參照第3D圖,提供發光元件100A-1。在一實施例中,一個發光元件100A-1對應一個導電區323以及一個連結結構340a。在另一實施例中,可將多個發光元件100A-1、100A-2同時對應多個導電區323、324以及連結結構340a、340b。
參照第3E圖,將發光元件100A-1的凸塊142a、144a透過電連結部的下部分3442a與導電區323電性連接以構成發光裝置300A。在一實施例中,發光元件100A-1的凸塊142a、144a被外力提供一個向下的力量,穿入保護部343a直到接觸電連結部的下部分3442a。此時,凸塊142a、144a作為連結結構340a中電連結部的上部分3441a。此外,電連結部的上部分3441a與電連結部的下部分3442a之間形成一頸部結構3443a。在一實施例中,電連結部的上部分3441a與電連結部的下部分3442a的材料組成不同,例如:電連結部的上部分3441a含有銅元素且電連結部的下部分3442a含有錫元素。相似地,發光元件100A-2的凸塊142a、144a透過電連結部的下部分3442b與導電區324電性連接以構成另一發光裝置。在一實施例中,發光元件100A-1與發光元件100A-2是被分別地形成單一個發光裝置。在另一實施例中,發光元件100A-1與發光元件100A-2可被同時地形成多個發光裝置。在一實施例中,絕緣層322可在後續步驟中被切割,如此,發光裝置300A與另一發光裝置彼此物理性分離。在另一實施例中,絕緣層322不需被切割,如此,發光裝置300A與另一發光裝置是共用絕緣層322。
第3A圖至第3C圖以及第3F圖至第3J圖係顯示依據本發明另一實施例之發光裝置300B的製造流程圖。在第3C圖,形成連結結構340a、340b中的保護部343a、343b以及電連結部的下部分3442a、3442b的步驟之後,接著第3F圖至第3H,透過一治具將連結結構340a、340b形成多個凹陷部347a、347b。在一實施例中,參照第3F圖,提供一具有多個凸部的治具360,凸部的形狀例如是尖狀。治具360的各個凸部分別對準連結結構340a、340b的電連結部的下部分3442a、3442b。參照第3G圖,將治具360中的多個凸部穿入保護部343a直到接觸電連結部的下部分3442a、3442b。參照第3H圖,將治具360向上與連結結構340a、340b分離以形成多個凹陷部347a、347b。多個凹陷部347a、347b分別對應導電區323、324以及電連結部的下部分3442a、3442b。參照第3I圖,將發光元件100B-1、100B-2的凸塊142b、144b分別對準電連結部的下部分3442a與導電區323。參照第3J圖,將發光元件100B-1的凸塊142b、144b透過電連結部的下部分3442a與導電區323電性連接以構成發光裝置300B。相似地,發光元件100B-2的凸塊142a、144a透過電連結部的下部分3442b與導電區324電性連接以構成另一發光裝置。在一實施例中,發光元件100B-1與發光元件100B-2被同時地形成多個發光裝置。在另一實施例中,發光元件100B-1與發光元件100B-2可被分別地形成單一個發光裝置。
第4A圖至第4E圖係顯示依據本發明另一實施例之發光裝置400A的製造流程圖。參照第4A圖,提供一載板。該載板包含一絕緣層322以及多個導電區323、324。絕緣層322以及多個導電區323、324的結構、作用及材料可以參考第3A圖相應之段落。
參照第4B圖,將膠料440’a、440’b分別地形成在導電區323、324之上及周遭。在一實施例中,形成膠料440’a、440’b的方式是透過圖形化治具,其中,圖形化治具例如是鋼版(stencil)或網版。在一實施例中,膠料440’a、440’b包含樹脂。樹脂的材料包含熱固化高分子以及助焊劑。熱固性高分子可以是環氧樹脂。在另一實施例中,膠料440’a、440’b包含樹脂以及分散在樹脂中的光反射粒子。光反射粒子的材料可以是氧化鈦(titanium oxide)、氧化鋅、氧化鋁、硫酸鋇或碳酸鈣。
參照第4C圖,提供發光元件100C-1、100C-2。將發光元件100C-1的凸塊142c-1、144c-1對準導電區323以及發光元件100C-2的凸塊142c-2、144c-2對準導電區324。參照第4D圖,將發光元件100C-1的凸塊142c-1、144c-1穿入膠料440’a並接觸導電區323。相似地,發光元件100C-2的凸塊142c-2、144c-2穿入膠料440’b並接觸導電區324。
參照第4E圖,熔融凸塊142c-1、144c-1、142c-2、144c-2。因此,凸塊142c-1、144c-1與導電區323接合以形成連結結構440a、440b中的電連結部441、442。相似地,凸塊142c-2、144c-2與導電區324接合以形成電連結部444、445。在此步驟,除了熔融凸塊142c-1、144c-1、142c-2、144c-2外,還固化膠料440’a、440’b以形成連結結構440a、440b中的保護部443a、443b。在熔融發光元件100C-1的凸塊142c-1、144c-1以及固化膠料440’a後以形成發光裝置400A。相似地,發光元件100C-2的凸塊142c-2、144c-2在熔融後以及膠料440’b在固化後以形成另一發光裝置400B。在一實施例中,連結結構440a、440b還包含光反射粒子(圖未示),光反射粒子分別地分散在保護部443a、443b內。如此,可增加連結結構440a、440b對發光元件100C-1、100C-2發出的光的反射率。
參照第5A圖,在一實施例中,發光裝置400B中連結結構440b的局部結構圖。發光元件100C-2的接觸電極1241C-2與絕緣層322之上的導電區324之間具有電連結部444A。在一實施例中,電連結部444A包含上部分4441A、頸部4443A以及下部分4442A。頸部4443A位於上部分4441A以及下部分4442A之間。在一實施例中,電連結部的上部分4441A與電連結部的下部分4442A的材料組成相同,例如:兩者皆含有錫元素。在一實施例中,頸部4443A的寬度小於上部分4441A的寬度。在一實施例中,上部分4441A的寬度小於下部分4442A的寬度。在一實施例中,電連結部444的厚度T2小於5微米。在另一實施例中,電連結部444的厚度T2大於3微米。在另一實施例中,電連結部444的厚度T2介於1微米至4微米之間。在一實施例中,上部分4441A的底表面至少有一部分大致上為平面。在一實施例中,接觸電極1241C-2的底表面至上部分4441A的底表面的平面之間的距離小於1微米。在另一實施例中,接觸電極1241C-2的底表面至上部分4441A的底表面的平面之間的距離小於0.5微米。在一實施例中,保護部443a圍繞電連結部444A。在一實施例中,保護部443a包覆接觸電極1241C-2、電連結部444A以及導電區324。保護部443a可保護接觸電極1241C-2、電連結部444A及/或導電區324,如此可阻擋環境中水氣或氧氣與接觸電極1241C-2、電連結部444A及/或導電區324的接觸。此外,保護部443a可避免電連結部444A在高溫環境下因為軟化或熔融造成短路的問題。
參照第5A圖,在一實施例中,上部分4441A、頸部4443A以及下部分4442A皆包含金元素。在一實施例中,上部分4441A、頸部4443A以及下部分4442A皆包含金元素及錫元素。在一實施例中,位於接觸電極1241C-2以及上部分4441A之面積A1的金元素之強度大於導電區324以及下部分4442A之面積A2的金元素之強度。如此表示,接觸電極1241C-2以及上部分4441A之面積A1的金元素的原子百分比大於下部分4442A之面積A2的金元素的原子百分比。上述的元素的分析可透過能量色散X-射線光譜(Energy-dispersive X-ray spectroscopy, EDX)。
參照第5B圖,在另一實施例中,發光裝置400B中連結結構440b的局部結構圖。與第5A圖不同之處,連結結構440b的電連結部444B沒有頸部結構。在一實施例中,電連結部444B的寬度由接觸電極1241C-2往導電區324的方向漸寬。在一實施例中,電連結部444的厚度T2小於3微米。電連結部444的厚度T3介於1微米至3微米之間。
參照第5C圖,在另一實施例中,發光裝置400B中連結結構440b的局部結構圖。與第5A圖不同之處,電連結部444C兩個邊緣的厚度不同,具有厚度T4及T5。此外,厚度T4小於厚度T5。厚度T5對應的結構與第5A圖相似,具有頸部結構。厚度T4對應的結構與第5B圖相似,沒有頸部結構。
參照第5D圖,在另一實施例中,發光裝置400B中連結結構440b的局部結構圖。電連結部444D的內部具有孔洞444d。電連結部444D可以包含單一個或多個孔洞444d。孔洞444d的形狀可以是規則或不規則。規則的形狀可以是圓形、橢圓形或多角形。
第6圖係顯示根據本發明一實施例所揭露之一發光模組600的上視圖。在一實施例中,發光模組600包含第一畫素610以及第二畫素620。可理解的,畫素的數目視發光模組600所需而定,這裡僅是表示發光模組600中的兩個畫素。第一畫素610包含6個子畫素區塊611a、611b、612a、612b、613a、613b。子畫素區塊611a、611b、612a、612b、613a、613b可各別地提供發光元件614a、614b、615a、615b、616a、616b形成在區塊中。發光元件614a、614b、615a、615b、616a、616b的結構可以是上述發光元件100A、發光元件100B、發光元件100C或其組合,或是任何適當的發光元件。子畫素區塊611a以及子畫素區塊611b為一組。子畫素區塊612a以及子畫素區塊612b為一組。以及子畫素區塊612a以及子畫素區塊612b為一組。兩個子畫素區塊為一組可提供備用(backup)的功能,當一個子畫素區塊在測試時不能運作或性能無法達到需求,例如:亮度不足或色點偏移,在後續修補時可提供另一個子畫素區塊給另一個發光元件。因此,並非是所有子畫素區塊611a、611b、612a、612b、613a、613b內皆有發光元件614a、614b、615a、615b、616a、616b。在一實施例中,一開始僅有發光元件614a、615a、616a分別在子畫素區塊611a、612a、613a內。當測試結果發光元件614a、615a、616a皆為正常,則子畫素區塊611b、612b、613b內不會再放置發光元件614b、615b、616b。若發光元件614a異常,則發光元件614a將會不導通,以發光元件614b取代。發光元件615a、616a也是相似於發光元件614a的狀況。相似地,第二畫素620包含6個子畫素區塊621a、621b、622a、622b、623a、623b。子畫素區塊621a、621b、622a、622b、623a、623b可各別地提供發光元件624a、624b、625a、625b、626a、626b形成在區塊中。第二畫素620中的子畫素區塊以及發光元件與第一畫素610的作用大致相同。
第7A圖至第7D圖係顯示根據本發明一實施例所揭露之一修補發光模組的製造流程圖。參照第7A圖,提供一載板。該載板包含一絕緣層722(第二絕緣層)以及多個導電區723、724。絕緣層722以及多個導電區723、724的結構、作用及材料可以參考第3A圖相應之段落。載板的導電區724上形成發光元件614a。在一實施例中,發光元件614a與導電區724電性連結,電性連結的方式是透過一般焊接742(solder)。在其他實施例中,電性連結的方式是透過第3A圖至第4E圖上述段落中任一個實施例的方式。此時,導電區723是被露出。當測試發光元件614a後,認為發光元件614a為異常。參照第7B圖,將含有樹脂341及導電粒子342的膠料340’形成在導電區323之上及周遭。樹脂341、導電粒子342以及膠料340’ 的結構、作用及材料可以參考第3B圖相應之段落。
參照第7C圖,提供發光元件614b,並將發光元件614b的電極614b-1、614b-2對準導電區723。發光元件614b的電極614b-1、614b-2可以是一般的金屬墊,一般的凸塊或是第1A圖至第1C圖的任一種凸塊。參照第7D圖,發光元件614b放置到導電區723之上並熔融導電粒子342後形成連結結構340。與此步驟中,膠料340’中的樹脂341被固化以形成連結結構340中的保護部343。此步驟的樹脂341、導電粒子342以及膠料340’的變化描述可參考第3C圖相應之段落。
第7A圖,第7E圖至第7G圖係顯示根據本發明另一實施例所揭露之一修補發光模組的製造流程圖。第7A圖之後,接著第7E圖,將膠料440’分別地形成在導電區723之上及周遭。膠料440’ 的形成方式、作用及材料可以參考第4B圖相應之段落。
參照第7F圖,提供發光元件100C,並將發光元件100C的凸塊142c、144c對準導電區723。發光元件100C的凸塊142c、144c可參閱第1C圖相應之段落。參照第7G圖,熔融凸塊142c、144c。因此,凸塊142c、144c與導電區723接合以形成連結結構440中的電連結部441、442。在此步驟,除了熔融凸塊142c、144c外,還固化膠料440’以形成連結結構440中的保護部443。
第8A圖至第8G圖係顯示根據本發明一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。參照第8A圖,提供一轉移裝置。在一實施例中,轉移裝置具有壓印頭820,且壓印頭820包含多個柱狀體822。在一實施例中,多個柱狀體822彼此間隔相同的距離。在另一實施例中,多個柱狀體822彼此間隔的距離可以不相同。此外,多個柱狀體822的底部各自地存在黏膠810’ 。在一實施例中,黏膠810’的材料為熱解材料(thermal release material)。熱解材料的特性是加熱後改變材料的黏性。在一實施例中,熱解材料是加熱後黏性降低的熱解膠(thermal release tape)。黏性降低可以是指加熱後的黏著力(adhesive strength)小於加熱前的二十分之一。
參照第8B圖,提供一原始基板830,且原始基板830上包含多個發光元件860。原始基板830可作為發光元件860承載用。在一實施例中,原始基板830的材料可以是塑膠、玻璃或藍寶石。在一實施例中,發光元件860包含半導體材料。多個發光元件860的結構可以是上述發光元件100A、發光元件100B、發光元件100C或其組合,或是任何適當的發光元件。多個發光元件860包含兩個群組,一個群組為被選的發光元件862,另一個群組則是未被選擇的發光元件864。在一實施例中,被選的發光元件862之間穿插了未被選擇的發光元件864。穿插的數目視需要可調整,例如:1、2或3個。穿插的數目可以是固定或是變化的。多個柱狀體822對應被選的發光元件862。在一實施例中,黏膠810’接觸被選的發光元件862。
參照第8C圖,被選的發光元件862與原始基板830分離。在一實施例中,透過多個柱狀體822的黏膠810’的接合力大於被選的發光元件862與原始基板830之間的接合力,如此多個柱狀體822將被選的發光元件862抓取上來。
參照第8D圖,提供一目標基板850,目標基板850的上表面具有多個導電墊852,導電墊852之上及周遭形成膠料(或稱自組膠)840’,並將壓印頭820上被選的發光元件862對應導電墊852。目標基板850可以是電路基板。膠料(或稱自組膠)840’ 的結構、作用及材料可以參考第3B圖及第7B圖相應之段落。
參照第8E圖,將被選的發光元件862與導電墊852上的膠料840’接觸。在一實施例中,發光元件862被施予一下壓的力量使得發光元件862上的接觸電極(圖未示)與導電墊852接觸或非常接近。此時,發光元件862的底部至少一部分被膠料840’所覆蓋。
參照第8F圖,被選的發光元件862被放置到導電墊852之上並提供能量E1以熔融膠料840’中的導電粒子(圖未示)以及固化膠料840’中的樹脂(圖未示)以形成已固化膠層(或稱連結結構)840。此步驟的樹脂、導電粒子以及膠料840’的變化描述可參考第3C圖相應之段落。在一實施例中,能量E1為熱,透過加熱使導電粒子熔融,樹脂固化,並使得黏膠810’的黏性降低形成黏膠810。如此,已固化膠層(或稱連結結構)840對發光元件862的接合力大於黏膠810。
參照第8G圖,被選的發光元件862形成在目標基板850上且與轉移裝置分離。由於上一步驟中,已固化膠層840對發光元件862接合力大於黏膠810對發光元件862的接合力,因此,當轉移裝置的壓印頭820向上移動時,被選的發光元件862就會被固定在目標基板850上且與轉移裝置的壓印頭820分離。此步驟中,發光元件862也與目標基板850的導電墊852電性連結。
第9A圖至第9B圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。第9A圖之前的步驟可參考第8A圖至第8E圖相應之段落。在此實施例中,黏膠810’為光解離材料。光解離材料或光固化材料的特性是照光後改變材料的黏性。在一實施例中,光解離材料是在照射紫外光後黏性降低的紫外光解離膠(UV release tape)。參照第9A圖,被選的發光元件862被放置到導電墊852之上並提供能量E1以熔融膠料840’中的導電粒子(圖未示)以及固化膠料840’中的樹脂(圖未示)後形成已固化膠層(或稱連結結構)840。此外,提供能量E2到黏膠810’,將黏膠810’轉變成黏度較低的黏膠810。在一實施例中,能量E1為熱能,能量E2為紫外光,且黏膠810’為紫外光解離膠。此步驟的膠料840’的變化描述可參考第3C圖相應之段落。
參照第9B圖,被選的發光元件862形成在目標基板850上且與轉移裝置分離。該步驟可以參考第8G圖相應之段落。
第10A圖至第10B圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。第10A圖之前的步驟可參考第8A圖至第8E圖相應之段落。在此實施例中,黏膠810’為熱解材料,導電墊852之上形成的是焊料。在一實施例中,導電墊852之上形成的是具有共晶(eutectic)特性的焊料。參照第10A圖,被選的發光元件862被放置到導電墊852之上並提供能量E1以熔融焊料後形成連結結構1040。此外,同時提供一能量E3使得發光元件862與導電墊852可緊密的接觸。在一實施例中,能量E1為熱能,能量E3為壓力。
參照第10B圖,在被選的發光元件862下形成連結結構1040後,被選的發光元件862形成在目標基板850上且與轉移裝置分離。該步驟可以參考第8G圖相應之段落。
第11A圖至第11B圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。第10A圖之前的步驟可參考第8A圖至第8E圖相應之段落。在此實施例中,黏膠810’為熱解材料,導電墊852之上形成的膠料1140’是異方性導電膠(Anisotropic Conductive Paste;ACP)。參照第11A圖,被選的發光元件862被放置到導電墊852之上並提供能量E1以固化膠料1140’中的樹脂(圖未示)後形成已固化膠層(或稱連結結構)1140。此外,同時提供一能量E3使得發光元件862與導電墊852可緊密的相鄰,並透過膠料1140’中的導電粒子電性連接發光元件862與導電墊852。在一實施例中,能量E1為熱能,能量E3為壓力。
參照第11B圖,在被選的發光元件862下形成連結結構1140後,被選的發光元件862形成在目標基板850上且與轉移裝置分離。該步驟可以參考第8G圖相應之段落。
第12圖係顯示根據本發明另一實施例所揭露之轉移裝置1200的壓印頭1220。轉移裝置1200中的壓印頭1220具有多個柱狀體1222,柱狀體1222的結構由斷面圖觀之,柱狀體1222之底部的寬度大於柱狀體1222之上部的寬度。柱狀體1222之間形成凹槽,凹槽由內向外的寬度漸窄,如此當部分的黏膠1210’被填到凹槽內時,可增加轉移裝置1200對黏膠1210’的抓取力避免黏膠1210’從轉移裝置1200脫落。轉移裝置1200可用於上述第8A圖至第11B圖中任何實施例或是任何適合轉移發光元件的實施例。
第13A圖及第13B圖係顯示根據本發明一實施例所揭露之發光裝置中連結結構於固化前後的示意圖。參照第13A圖,目標基板850的上表面具有多個導電墊852,於固化前,導電墊852之上及周遭形成膠料(或稱自組膠)340’,且發光元件862形成在導電墊852之上並部份埋入膠料340’中。詳言之,膠料340’包含樹脂341及分散於樹脂中341的導電粒子342。導電墊852之上至發光元件862之下具有接合區1301,導電墊852之間以及發光元件862之間則具有非接合區1302。膠料340’ 、 樹脂341以及導電粒子342的結構、作用及材料可以參考第3B圖相應之段落。
參照第13B圖,固化後,連結結構340被形成,導電粒子342在熔融後並聚集在接合區1301內及周遭成為電連結部344。此外,樹脂341固化後成為保護部343。在一實施例中,少部份的導電粒子342分散在非接合區1302中。在非接合區1302內的導電粒子342至少部份彼此是分離的因此不會產生短路的問題。
第14A圖及第14B圖係顯示根據本發明另一實施例所揭露之發光裝置中連結結構於固化前後的示意圖。固化前,參照第14A圖,與第13A圖不同之處,樹脂341是分別形成在兩個發光元件862之下及周遭,但彼此是分開的。相似地,非接合區1402具有兩區,分別對一個發光元件862,非接合區1402的這兩區彼此是分離的。接合區1401的部分與第13A圖相同。固化後,參照第14B圖,連結結構340、保護部343以及電連結部344的結構、作用及材料可以參考第13B圖相應之段落。
第15A圖至第15D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。參照第15A圖,提供一原始基板1530,且原始基板1530上包含多個發光元件860。此外,提供一目標基板850,目標基板850的上表面具有多個導電墊852。在一實施例中,原始基板1530包含承載基板1532及可離型膠1534。可離型膠1534將多個發光元件860暫時地固定在承載基板1532上。多個發光元件860包含兩個群組,一個群組為被選的發光元件862,另一個群組則是未被選擇的發光元件864。在一實施例中,被選的發光元件862各包含兩個接觸電極862a。原始基板1530、發光元件860、被選的發光元件862、未被選擇的發光元件864、目標基板850以及導電墊852的結構、作用及材料可以參考第8B圖及第8D圖相應之段落。
參照第15B圖,將膠料340’分別地形成在導電墊852之上及周遭,並將被選的發光元件862對準具有膠料340’的導電墊852。膠料340’ 的結構、作用及材料可以參考第3B圖相應之段落。
參照第15C圖,被選的發光元件862被放置到導電墊852之上並提供能量E1以熔融膠料340’中的導電粒子(圖未示)以及固化膠料340’中的樹脂(圖未示)。此步驟的能量E1、樹脂、導電粒子以及膠料340’的相關描述可參考第3C圖、第8F圖以及第13A圖至第14B圖相應之段落。
參照第15D圖,被選的發光元件862形成在目標基板850上且與轉移裝置分離。在經過能量E1後,離型膠1534的黏性降低,且膠料340’轉變成連結結構340,並形成保護部343以及電連結部344。連結結構340對被選的發光元件862的接合力大於離型膠1534對被選的發光元件862的接合力。
第15A圖、第15B圖、第15E圖至第15D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。在第15B圖之後,接著第15E圖。第15E圖與第15C圖不同之處在於提供能量E1的位置也可從原始基板1530的地方提供。之後,再接著第15D圖。
第15A圖、第15B圖、第15F圖至第15D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。在第15B圖之後,接著第15F圖。第15F圖與第15C圖不同之處在於局部地區提供能量E4。在一實施例中,能量E4為雷射因此可在局部地區,例如:接合的地區,提供熱量。之後,再接著第15D圖。
第16A圖至第16C圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。參照第16A圖,提供一原始基板1530,且原始基板1530上包含多個發光元件860。此外,多個發光元件860的下表面被膠料340’所覆蓋。再者,提供一目標基板850,目標基板850的上表面具有多個導電墊852。原始基板1530、發光元件860、目標基板850以及導電墊852的結構、作用及材料可以參考第8B圖、第8D圖及第15A圖相應之段落。
參照第16B圖,被選的發光元件862被放置到導電墊852之上並提供能量E1以熔融膠料340’中的導電粒子(圖未示)以及固化膠料340’中的樹脂(圖未示)。此步驟的能量E1、樹脂、導電粒子以及膠料340’的相關描述可參考第3C圖、第8F圖以及第13A圖至第14B圖相應之段落。
參照第16C圖,被選的發光元件862形成在目標基板850上且與轉移裝置分離。該步驟的相關描述可參考第15D圖相應之段落。
第16D圖、第16E圖至第16C圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。參照第16D圖,提供一原始基板1530,且原始基板1530上包含多個發光元件860。此外,多個發光元件860的下表面被膠料340’所覆蓋。再者,提供一目標基板850,目標基板850的上表面具有多個導電墊852。原始基板1530、發光元件860、目標基板850以及導電墊852的結構、作用及材料可以參考第8B圖、第8D圖及第15A圖相應之段落。
參照第16E圖,在於局部地區提供能量E4以熔融膠料340’中的導電粒子(圖未示)以及固化膠料340’中的樹脂(圖未示)。在一實施例中,能量E4為雷射。此步驟的能量E4、樹脂、導電粒子以及膠料340’的相關描述可參考第3C圖、第8F圖、第13A圖至第14B圖以及第15F圖相應之段落。第16E圖後接續第16C圖。
第17A圖係顯示根據本發明一實施例所揭露之一發光元件的底視圖。第17B圖係顯示根據本發明一實施例所揭露之覆蓋連結結構之一發光元件的底視圖。第17C圖係顯示根據本發明一實施例所揭露之覆蓋連結結構之一目標基板的底視圖。第17A圖至第17C圖可一併參閱,可以是本發明所揭示之任何實施例中關於發光元件、連結結構以及目標基板之間的關係。
參照第17A圖,被選的發光元件862的底視圖中,包含兩個接觸電極862a以及邊界862b。邊界862b所圍成的面積為A3。
參照第17B圖,連結結構340覆蓋部分被選的發光元件862的底表面。此外,連結結構340覆蓋被選的發光元件862的面積為A4。在一實施例中,面積A4與面積A3的比約在60%至80%之間。若面積A4與面積A3的比大於80%,則連結結構340在未固化階段時的膠料340’可能會沾黏到鄰近未被選擇的發光元件864,造成未被選擇的發光元件864產生也被轉移到目標基板的意外。
參照第17C圖,連結結構340覆蓋部分導電墊852的底表面。連結結構340覆蓋被選的導電墊852的面積為A5。在一實施例中,面積A5與面積A3的比約在60%至80%之間。若面積A5與面積A3的比大於80%,則連結結構340在未固化階段時的膠料340’可能會沾黏到鄰近未被選擇的發光元件864,造成未被選擇的發光元件864也被轉移到目標基板的意外。
第18A圖至第18D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。參照第18A圖,與第15A圖不同之處在於原始基板1530與目標基板850之間存在間隔件1811、1812。在一實施例中,間隔件1811、1812分別在目標基板850上且在目標基板850的邊緣處,例如:四個角落。在另一實施例中,間隔件1811、1812可在目標基板850上的其他地區,例如:中間區域。在一實施例中,間隔件1811、1812的形狀為球形。在其他實施例中,間隔件1811、1812的形狀可以是柱狀、長方體或椎狀。間隔件1811、1812的數目可視需求調整。第18A圖其他特徵的相關描述可以參考第15A圖相應之段落。
參照第18B圖,將膠料1840’-1分別地形成在導電墊852之上及周遭,並將被選的發光元件862對準具有膠料1840’-1的導電墊852。膠料1840’-1 的結構、作用及材料可以參考第3B圖相應之段落。
參照第18C圖,被選的發光元件862被放置到導電墊852之上並提供能量E1以熔融膠料1840’-1中的導電粒子(圖未示)以及固化膠料1840’-1中的樹脂(圖未示)。原始基板1530與目標基板850之間的間距被間隔件1811、1812的直徑R所限制。因此,間隔件1811、1812的導入可以提供原始基板1530與目標基板850之間具有較均一的間距。換言之,被選的發光元件862的厚度Y固定,因此,發光元件862到目標基板850的距離h可被固定,因為R=Y+h。此步驟的能量E1、樹脂、導電粒子以及膠料1840’-1的相關描述可參考第3C圖、第8F圖以及第13A圖至第14B圖相應之段落。
參照第18D圖,被選的發光元件862形成在目標基板850上且與轉移裝置分離。該步驟的相關描述可參考第15D圖相應之段落。
第18A圖、第18B圖、第18E圖至第18F圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。第18E圖接續第18B圖,第18E圖類似第18C圖,且第18F圖類似第18D圖。參照第18E圖,在一實施例中,膠料1840’-2形成在導電墊852之上及周遭,且膠料1840’-2的寬度大於發光元件860的寬度W且小於發光元件860的寬度W加上發光元件860之間的間距d。參照第18F圖,在熔融膠料1840’-2中的導電粒子(圖未示)以及固化膠料1840’-2中的樹脂(圖未示)後,連結結構1840-2的寬度小於發光元件860的寬度W加上發光元件860之間的間距d。如此,可避免在未固化階段時的膠料1840’-2可能會沾黏到鄰近未被選擇的發光元件864,造成未被選擇的發光元件864也被轉移到目標基板的意外。
第18A圖、第18G圖至第18I圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。第18G圖接續第18A圖。參照第18G圖,第18G圖與第18B圖不同之處在於膠料1840’-3先被形成在被選擇的發光元件862之上。之後,第18H圖類似第18C圖,且第18F圖類似第18D圖。
第19A圖及第19B圖係顯示根據第18A圖至第18D圖所揭露之發光裝置中連結結構於固化前後的示意圖。第19A圖顯示固化前(低溫下),膠料(或稱自組膠)1840’-1形成在導電墊852之上及周遭,且發光元件862的下表面部份埋入膠料1840’-1中。由於沒有提供一個下壓的力,因此膠料1840’-1僅覆蓋發光元件862的下表面,並未覆蓋到發光元件862的側表面。此外,導電粒子1842-1大致上均勻地分散於樹脂1841-1內。導電墊852之上至發光元件862之下具有接合區1901,導電墊852之間以及發光元件862之間則具有非接合區1902。導電粒子1842-1在接合區1901以及非接合區1902內的密度大致相同。
第19B圖顯示固化後(高溫下),膠料1840’-1形成連結結構1840-1。相似地,連結結構1840-1僅覆蓋發光元件862的下表面,並未覆蓋到發光元件862的側表面。不過,導電粒子1842-1在接合區1901內的密度大於非接合區1902內的密度。
第19C圖係顯示根據第18D圖例所揭露之一發光裝置的俯視圖。在一實施例中,在目標基板850上,連結結構1840-1的面積A(P)小於發光元件862的面積A(C) 。在一實施例中,電連結部1844-1的面積A(S)大於接觸電極862a的面積A(E)。
第19D圖係顯示根據第18F圖例所揭露之一發光裝置的俯視圖。在一實施例中,在目標基板850上,連結結構1840-2的面積A(P)大於發光元件862的面積A(C)。
以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。
100a-1、100a-2、300A、300B、400A、400B:發光裝置
100A、100A-1、100A-2、100B、100B-1、100B-2、100C、100C-1、100C-2、614a、614b、615a、615b、616a、616b、860:發光元件
120、120A、120B、120C:發光單元
1211A、1211B、 1212A、1212B、852:導電墊
122:發光疊層
1221:第一半導體
1222:發光層
1223:第二半導體
123A、322、722:絕緣層
124、1241、1241A、1241B、1241C、1241C-1、1241C-2、1242、1242A、1242B、1242C、1242C-1、1242C-2、862a:接觸電極
125C:光阻擋圍欄
126A、126B、126C、1532:承載基板
128B、128C:波長轉換層
142a、142b、142c、142c-1、142c-2、144a、144b、144c、144c-1、144c-2:凸塊
323、324、723、724:導電區
340、340a、340b、440、440a、440b、840、1040、1140、1840-1、1840-2:連結結構
340’、340’a、340’b、440’、440’a、440’b、840’、1140’、1840’-1、1840’-2:膠料
341a、341b、1841-1:樹脂
342a、342b、1842-1:導電粒子
343、343a、343b、443、443a、443b:保護部
344、344a、344b、441、442、444、444A、444B、444C、444D、 445、1844-1:電連結部
3441a、3441b、4441A:電連結部的上部分
3442a、3442b、4442A:電連結部的下部分
3443a、3443b、4442A:電連結部的頸部
444d:孔洞
600:發光模組
610:第一畫素
611a、611b、612a、612b、613a、613b、621a、621b、622a、622b、623a、623b:子畫素區塊
620:第二畫素
614b-1、614b-2:電極
810’、 1210’:黏膠
820、1220:壓印頭
822、1222:柱狀體
830、1530:原始基板
850:目標基板
862:被選的發光元件
862b:邊界
864:未被選擇的發光元件
1200:轉移裝置
A1、A2、A3、A4、A5、A(C)、A(E)、A(P)、A(S):面積
E1、E2、E3、E4:能量
R:直徑
T1、T2、T3、T4、T5、Y:厚度
W:寬度
h:距離
第1A圖係顯示根據本發明一實施例所揭露之一發光元件的剖面圖。
第1B圖係顯示根據本發明另一實施例所揭露之一發光元件的剖面圖。
第1C圖係顯示根據本發明另一實施例所揭露之一發光元件的剖面圖。
第2A圖係顯示根據本發明一實施例所揭露之一發光單元的剖面圖。
第2B圖係顯示根據本發明另一實施例所揭露之一發光單元的剖面圖。
第2C圖係顯示根據本發明另一實施例所揭露之一發光單元的剖面圖。
第3A圖至第3E圖係顯示依據本發明一實施例之發光裝置的製造流程圖。
第3A圖至第3D圖以及第3F圖至第3J圖係顯示依據本發明另一實施例之發光裝置的製造流程圖。
第4A圖至第4E圖係顯示依據本發明另一實施例之發光裝置的製造流程圖。
第5A圖至第5D圖係顯示依據本發明一實施例之發光裝置的局部結構圖。
第6圖係顯示根據本發明一實施例所揭露之一發光模組的上視圖。
第7A圖至第7D圖係顯示根據本發明一實施例所揭露之一修補發光模組的製造流程圖。
第7A圖,第7E圖至第7G圖係顯示根據本發明另一實施例所揭露之一修補發光模組的製造流程圖。
第8A圖至第8G圖係顯示根據本發明一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第9A圖至第9B圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第10A圖至第10B圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第11A圖至第11B圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第12圖係顯示根據本發明另一實施例所揭露之轉移裝置的壓印頭。
第13A圖及第13B圖係顯示根據本發明一實施例所揭露之發光裝置中連結結構於固化前後的示意圖。
第14A圖及第14B圖係顯示根據本發明另一實施例所揭露之發光裝置中連結結構於固化前後的示意圖。
第15A圖至第15D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第15A圖、第15B圖、第15E圖至第15D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第15A圖、第15B圖、第15F圖至第15D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第16A圖至第16C圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第16D圖、第16E圖至第16C圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第17A圖係顯示根據本發明一實施例所揭露之一發光元件的底視圖。
第17B圖係顯示根據本發明一實施例所揭露之覆蓋連結結構之一發光元件的底視圖。
第17C圖係顯示根據本發明一實施例所揭露之覆蓋連結結構之一目標基板的底視圖。
第18A圖至第18D圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第18A圖、第18B圖、第18E圖至第18F圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第18A圖、第18G圖至第18I圖係顯示根據本發明另一實施例所揭露之多個發光元件轉移至目標基板的製造流程圖。
第19A圖及第19B圖係顯示根據第18A圖至第18D圖所揭露之發光裝置中連結結構於固化前後的示意圖。
第19C圖係顯示根據第18D圖例所揭露之一發光裝置的俯視圖。
第19D圖係顯示根據第18F圖例所揭露之一發光裝置的俯視圖。
400A、400B:發光裝置
100C-1、100C-2:發光元件
1241C-2:接觸電極
322:載板
323、324:導電區
440a、440b:連結結構
443a、443b:保護部
441、442、444、445:電連結部
Claims (10)
- 一發光模組,包含: 一像素,包含: 一載板,包含一第一導電區以及一第二導電區; 一第一發光元件,不能運作或性能無法達到需求,並包含一第一接觸電極以及一第一上表面; 一焊接,位於該第一導電區以及該第一接觸電極之間; 一第二發光元件,可發出一第一色光,並包含一第二接觸電極以及一第二上表面;以及 一連結結構,包含一電連結部以及一保護部,該電連結部連結該第二接觸電極及該第二導電區,該保護部圍繞該第二接觸電極及該第一電連接部; 其中,該保護部不覆蓋該第一上表面與該第二上表面。
- 如申請專利範圍第1項之發光模組,其中,該電連結部與該焊接的形狀不同。
- 如申請專利範圍第1項之發光模組,其中,該電連結部與該焊接的材料不同。
- 如申請專利範圍第1項之發光模組,其中,該第二發光元件包含一第三接觸電極,該第三接觸電極電性連結該第二導電區。
- 如申請專利範圍第4項之發光模組,其中,該保護部有一部份位於該第二接觸電極與該第三接觸電極之間。
- 如申請專利範圍第1項之發光模組,其中,該第二發光元件包含一最外側表面,該保護部不覆蓋該最外側表面。
- 如申請專利範圍第1項之發光模組,其中,該保護部包含熱固性高分子材料。
- 如申請專利範圍第1項之發光模組,其中,該電連結部的內部具有一孔洞。
- 如申請專利範圍第1項之發光模組,其中,該保護部不與該第一發光元件接觸。
- 如申請專利範圍第1項之發光模組,其中,該第一上表面與該第二上表面不等高。
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- 2018-06-08 US US16/958,095 patent/US11641010B2/en active Active
- 2018-06-08 TW TW111142157A patent/TW202310442A/zh unknown
- 2018-06-08 CN CN202210747725.1A patent/CN115207192A/zh active Pending
- 2018-06-08 KR KR1020207018662A patent/KR20200119233A/ko not_active IP Right Cessation
- 2018-06-08 KR KR1020237044855A patent/KR20240006084A/ko not_active Application Discontinuation
- 2018-06-08 EP EP18897333.3A patent/EP3734674A4/en active Pending
- 2018-06-08 JP JP2020535611A patent/JP2021508947A/ja active Pending
- 2018-06-08 TW TW107119813A patent/TWI786126B/zh active
- 2018-06-08 WO PCT/CN2018/090440 patent/WO2019128118A1/zh unknown
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2023
- 2023-02-27 US US18/175,381 patent/US20230207769A1/en active Pending
- 2023-02-27 US US18/175,395 patent/US20230231098A1/en active Pending
Also Published As
Publication number | Publication date |
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KR20200119233A (ko) | 2020-10-19 |
CN116053385A (zh) | 2023-05-02 |
CN115207195A (zh) | 2022-10-18 |
US20230231098A1 (en) | 2023-07-20 |
US20210066562A1 (en) | 2021-03-04 |
CN115207192A (zh) | 2022-10-18 |
TWI786126B (zh) | 2022-12-11 |
CN111542930A (zh) | 2020-08-14 |
US20230207769A1 (en) | 2023-06-29 |
CN116053391A (zh) | 2023-05-02 |
WO2019128118A1 (zh) | 2019-07-04 |
TW201928475A (zh) | 2019-07-16 |
KR20240006084A (ko) | 2024-01-12 |
JP2021508947A (ja) | 2021-03-11 |
CN111542930B (zh) | 2023-02-28 |
US11641010B2 (en) | 2023-05-02 |
EP3734674A4 (en) | 2021-09-22 |
EP3734674A1 (en) | 2020-11-04 |
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